Electronic transport properties of lead nanowires

Lead nanowire occupies a very important position in an electronic device. In this study, a genetic algorithm(GA)method has been used to simulate the Pb nanowire. The result shows that Pb nanowires are a multishell cylinder. Each shell consists of atomic rows wound up helically side by side. The quantum electron transport properties of these structures are calculated based on the non-equilibrium Green function(NEGF) combined with the density functional theory(DFT),which indicate that electronic transport ability increases gradually with the atomic number increase. In addition, the thickest nanowire shows excellent electron transport performance. It possesses great transmission at the Fermi level due to the strongest delocalization of the electronic state. The results provide valuable information on the relationship between the transport properties of nanowires and their diameter.     

Electron transport in a multichannel one-dimensional conductor: molybdenum selenide nanowires

We have measured electron transport in small bundles of identical conducting molybdenum selenide nanowires where the number of weakly interacting one-dimensional chains ranges from 1 to 300. The linear conductance and current in these nanowires exhibit a power-law dependence on temperature and bias voltage, respectively. The exponents governing these power laws decrease as the number of conducting channels increase. These exponents can be related to the electron-electron interaction parameter for transport in multichannel 1D systems with a few defects.     

Optical and structural properties of Eu-diffused and doped ZnO nanowires

Single crystal ZnO nanowires diffused with europium (Eu) from a solid source at 900 °C for 1 h or doped with Eu during growth have been characterized. The ZnO nanowires were grown by chemical vapor deposition on Si substrates employing Au as a catalyst. The diameter of the resulting nanowires was 200 nm with a length of 1 μm. Photoluminescence spectra excited by a He–Cd laser at room temperature showed the green luminescence at 515 nm in Eu-diffused nanowires. A small red shift of near-band-edge emission of ZnO nanowires was observed in the diffused wires, but sharp emission from Eu³ ions was not present. Transmission electron microscopy shows crystalline Eu₂O₃ formation on the diffused nanowire surface, which forms a coaxial heterostructure system. When Eu was incorporated during the nanowire growth, the sharp ⁵D_O–⁷F₂ transition of the Eu³⁺ ion at around 615 nm was observed.     

Superconducting properties and structural transformations of nitrogen implanted molybdenum films

Evaporated Mo-layers have been implanted with nitrogen ions to maximum fluences corresponding to a concentration of 33 at.%. The implantations lead to an enhancement of the superconducting transition temperature T_c up to 9.2 K and to structural transformations. Both effects are attributed to radiation induced disorder stabilized by the implanted impurity atoms; in particular the increase of T_c is thought to be due to the formation of impurity-defect complexes; channelling experiments support the idea of locally stabilized complexes.     

多壳层铜纳米线结构和电子特性的第一性原理研究

基于密度泛函理论框架下的第一性原理计算,系统地研究了多壳层Cu纳米线的稳定结构和电子特性.得到不同线径多壳层Cu纳米线的平衡态晶格常数相差不大,都表现出金属特性,且其单原子平均结合能和量子电导随着纳米线直径的增加而增加.纳米线中内壳层Cu原子表现出体相结构Cu原子相似的电子特性,而表面壳层由于配位数的减少,其3d态能量范围变窄且整体向费米能级发生移动.电荷密度分析表明,相对于体相Cu晶体中原子间的相互作用,纳米线表面壳层Cu原子与其最近邻原子间的相互作用明显增强.     

Low-temperature transport properties of individual SnO2 nanowires

Stannic oxide (SnO₂) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO₂ nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T^−1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears.     

Mo6S6 nanowires: structural, mechanical and electronic properties

The properties of nanowires were investigated with ab initio calculations based on the density-functional theory. The molecules build weakly coupled one-dimensional chains, like and Mo₆S_9-xI_x, and the crystals are strongly uniaxial in their mechanical and electronic properties. The calculated moduli of elasticity and resilience along the chain axis are c₁₁ = 320 GPa and E_R = 0.53 GPa, respectively. The electronic band structure and optical conductivity indicate that the crystals are good quasi-one-dimensional conductors. The frequency-dependent complex dielectric tensor ε, calculated in the random-phase approximation, shows a strong Drude peak in ε_∥, i.e., for the electric field polarised parallel to the chain axis, and several peaks related to interband transitions. The electron energy loss spectrum is weakly anisotropic and has a strong peak at the plasma frequency ħω_p ≈20 eV. The stability analysis shows that is metastable against the formation of the layered .     

Electronic and structural properties of N-vacancy in AlN nanowires: A first-principles study

The stability and electronic structures of AlN nanowires with and without N-vacancy are investigated using firstprinciples calculations.We find that there is an inverse correlation between formation energy and diameter in ideal AlN nanowires.After calculating the formation energies of N-vacancy at different sites in AlN nanowires with different diameters,we find that the N-vacancy prefers to stay at the surface of the nanowires and it is easier to fabricate them under Al-rich conditions.Through studying the electronic properties of AlN nanowires with N-vacancies,we further find that there are two isolated bands in the deep part of the band gap,one of them is fully occupied and the other is half occupied.The charge density indicates that the half-fully occupied band arises from the Al at the surface,and this atom becomes an active centre.     

Size-dependent chemical transformation,structural phase change,and optical properties of nanowires

Nanowires offer a unique approach for the bottom-up assembly of electronic and photonic devices with the potential of integrating photonics with existing technologies. The anisotropic geometry and mesoscopic length scales of nanowires also make them very interesting systems to study a variety of size-dependent phenomenon where finite-size effects become important. We will discuss the intriguing size-dependent properties of nanowire systems with diameters in the 5–300?nm range, where finite-size and interfacial phenomena become more important than quantum mechanical effects. The ability to synthesize and manipulate nanostructures by chemical methods allows tremendous versatility in creating new systems with well-controlled geometries, dimensions, and functionality, which can then be used for understanding novel processes in finite-sized systems and devices.     

From nanodiamond to diamond nanowires: structural properties affected by dimension

Although production of nanowires from various materials is proving very successful, the development of diamond nanowires has been slow. However, a significant amount of successful research has been conducted regarding zero-dimensional nanodiamond crystals, which may offer a basis for the development of one-dimensional diamond nanostructures. Observations of the structural transitions between nanodiamonds into carbon onions inevitably lead to questions as to whether a similar transformation occurs in one dimension and, if so, how it may be avoided. Presented here are ab initio investigations of dehydrogenated nanodiamond crystals and analogous diamond nanowires, to examine how the additional dimension effects structural properties.     

Field-emission enhancement of molybdenum oxide nanowires with nanoprotrusions

The field-emission properties of molybdenum oxide nanowires grown on a silicon substrate and its emission performance in various vacuum gaps are reported in this article. A new kind of molybdenum oxides named nanowires with nanoscale protrusions on their surfaces were grown by thermal vapor deposition with a length of ~1 μm and an average diameter of ~50 nm. The morphology, structure, composition and chemical states of the prepared nanostructures were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). According to XRD, XPS, and TEM analyses, the synthesized samples were composed of MoO₂ nanowires formed over a thin layer of crystalline Mo₄O₁₁. TEM observation revealed that these nanowires have some nanoscale protrusion on their surface. These nanoprotrusions resulted in enhancement of field-emission properties of nanowires comprising nanoprotrusions. The turn-on emission field and the enhancement factor of this type of nanostructures were measured 0.2 V/μm and 42991 at the vacuum gap of 300 μm, respectively. These excellent emission properties are attributed to the special structure of the nanowires that have potential for utilizing in vacuum nanoelectronic and microelectronic applications.     

Electrical transport and photoresponse properties of single-crystalline p-type Cd_3As_2 nanowires

Cd3As2 is an important II–V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high I on/I off of 104 with a hole mobility of 6.02 cm2V-1s-1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and optoelectronic devices.     

Magnetic and structural properties of the electrochemically deposited arrays of Co and CoFe nanowires

Magnetic and structural properties of the arrays of 18 nm diameter nanowires of Co and Co₉₀Fe₁₀ electrodeposited in the pores of anodic alumina are investigated. Arrays of Co and Co₉₀Fe₁₀ nanowires show perpendicular magnetic anisotropy and textured crystallographic behaviour. Coercivity H_c (⊥) and remanence M_r/M_s (⊥) values of 2275 Oe (Co₉₀Fe₁₀); 1188 Oe (Co) and 96% (Co₉₀Fe₁₀), 81% (Co) are observed. The continuous films of Co and Co₉₀Fe₁₀ on Cu substrates show in plane magnetic anisotropy and coercivity values between 109 and 288 Oe.     

First-principle study of the structural,electronic,and optical properties of SiC nanowires

We preform first-principle calculations for the geometric, electronic structures and optical properties of SiC nanowires(NWs). The dielectric functions dominated by electronic interband transitions are investigated in terms of the calculated optical response functions. The calculated results reveal that the SiC NW is an indirect band-gap semiconductor material except at a minimum SiC NW(n = 12) diameter, showing that the NW(n = 12) is metallic. Charge density indicates that the Si–C bond of SiC NW has mixed ionic and covalent characteristics: the covalent character is stronger than the ionic character, and shows strong s–p hybrid orbit characteristics. Moreover, the band gap increases as the SiC NW diameter increases. This shows a significant quantum size and surface effect. The optical properties indicate that the obvious dielectric absorption peaks shift towards the high energy, and that there is a blue shift phenomenon in the ultraviolet region. These results show that SiC NW is a promising optoelectronic material for the potential applications in ultraviolet photoelectron devices.     

Hydrothermal synthesis of MnO2 nanowires: structural characterizations,optical and magnetic properties

In this paper, 1D single-crystalline MnO₂ nanowires have been successfully synthesized by hydrothermal method using KMnO₄ and (NH₄)₂S₂O₈ as raw materials. X-ray diffraction patterns and high-resolution TEM images reveal pure tetragonal MnO₂ phase with diameters of 15–20 nm. Photoluminescence studies exhibited a strong ultraviolet (UV) emission band at 380 nm, blue emission at 452 nm and an extra weak defect-related green emission at 542 nm. UV–visible spectrophotometery was used to determine the absorption behavior of nanostructured MnO₂ and a direct optical band gap of 2.5 eV was acquired by Davis–Mott model. The magnetic properties of the products have been evaluated using vibrating sample magnetometer, which showed that MnO₂ nanowires exhibited a superparamagnetic behavior at room temperature. The magnetization versus temperature curve of the as-obtained MnO₂ nanowires shows that antiferromagnetic transition temperature is 99 K.     

Low-temperature thermal transport in nanowires

We propose a theory of low temperature thermal transport in nanowires in a regime in which competition between a phonon and flexural modes governs the relaxation processes. Starting with the standard kinetic equations for two different types of quasiparticles, we derive a general expression for the coefficient of thermal conductivity. The underlying physics of thermal conductance is completely determined by the corresponding relaxation times, which can be calculated directly for any dispersion of quasiparticles, depending on the size of a system. We show that, if the considered relaxation mechanism is dominant, then at small wire diameters the temperature dependence of thermal conductivity experiences a crossover from T^1/2 to T³-dependence. Quantitative analysis shows reasonable agreement with resent experimental results.     

Study of structural and electronic transport properties of Ce-doped LaMnO3

The structural and electronic transport properties of La_1−x Ce _x MnO₃ (x=0.0–1.0) have been studied. All the samples exhibit orthorhombic crystal symmetry and the unit cell volume decreases with Ce doping. They also make a metal-insulator transition (MIT) and transition temperature increases with increase in Ce concentration up to 50% doping. The system La_0.5Ce_0.5MnO₃ also exhibits MIT instead of charge-ordered state as observed in the hole doped systems of the same composition.     

Effects of silver and gold catalytic activities on the structural and optical properties of silicon nanowires

The metal-assisted chemical etching of silicon in an aqueous solution of hydrofluoric acid and hydrogen peroxide is established for the fabrication of large area, uniform silicon nanowire (SiNW) arrays. In this study, silver (Ag) and gold (Au) are considered as catalysts and the effect of different catalysts with various thicknesses on the structural and optical properties of the fabricated SiNWs is investigated. The morphology of deposited catalysts on the silicon wafer is characterized by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). It is shown that the morphology of the fabricated silicon nanostructures remarkably depends upon the catalyst layer thickness, and the catalyst etching time directly affects the structural and optical properties of the synthesized SiNWs. FESEM images show a linear increment of the nanowire length versus time, whereas the etching rate for the Au-etched SiNWs was lower than the Ag-etched ones. Strong light scattering in SiNWs caused the total reflection to decrease in the range of visible light, and this decrement was higher for the Ag-etched SiNW sample, with a longer length than the Au-etched one. A broadband visible photoluminescence (PL) with different peak positions is observed for the Au- and Ag-etched samples. The synthesized optically active SiNWs can be considered as a promising candidate for a new generation of nano-scale opto-electronic devices.     

Heat and spin transport in magnetic nanowires

Transport measurements are carried out in which temperature oscillation is applied to magnetic nanostructures. Using spin valves, this measurement reveals aspects of the spin transport in non-collinear configurations. In one implementation, an AC voltage is detected when a DC current is driven through the nanostructure under test and its temperature is made to oscillate by illuminating it with a laser diode. A simpler approach is presented that relies on Joule heating to generate the temperature oscillation, thus eliminating the need for any optical component.     

Extraction of structural information from measured transport properties of composites

We describe clearly Milton's bounds on the scalar transport properties of composite materials in the case when no geometrical information is known about the composite, but when a set of measured values of a transport property is available. We consider how the measured values may be used when they are subject to known errors. In this case, a statistical analysis is employed. We illustrate the various conclusions which may result from this analysis by considering six cases involving both two-and three-dimensional composites. In four of the six cases, estimates of the volume fraction of the composite in agreement with the known value are obtained. In the fifth case, the analysis pointed out a possible error in the experimental data, while in the sixth it revealed a critical dependence of transport properties on composite geometry due to filamentary linking between particles.