Temperature dependence of dark current-voltage characteristics of <Emphasis Type="Italic">n</Emphasis>InSb-<Emphasis Type="Italic">n</Emphasis>PbTe-<Emphasis Type="Italic">n</Emphasis>CdTe isotype structure

The temperature dependence of dark current-voltage characteristics of an nInSb-nPbTe-nCdTe structure is investigated. It is shown that in the temperature range from 115 K to 125 K an energy barrier exists for charge carriers through the InSb layer, which is strictly connected with different temperature dependences of electron concentrations in nInSb and nPbTe.     

Lifetime of nonequilibrium charge carriers in the base of <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis>-junction semiconductor diode at arbitrary injection levels

In the approximation of exponential distribution of nonequilibrium charge carriers in the base of semiconductor p-n-junction diode a formula is obtained for lifetime calculation, which is valid at arbitrary injection levels. The lifetime is determined via measurements of only stationary characteristics of diodes (dc-CVC and low-frequency differential resistance). These characteristics, as well as the dependence of the barrier capacity on the reverse voltage, for determination of equilibrium concentration of carriers in the diode base, have been measured for D226B alloy diodes. The dependence of the lifetime of nonequilibrium carriers on the injection level, calculated from experimental data, agrees with the Shockley-Read theory of recombination; this agreement may be considered as a justification of assumptions made for lifetime calculation.     

p-type ZnO films for preparation of p-n-junctions

Photoelectrical properties of ZnO films doped with Li acceptor impurity and prepared by the electron-beam evaporation method were investigated. The obtained films possess a p-type conductivity. Using p-ZnO:Li and n-ZnO:Ga films, the p-n-junctions were prepared and their photoelectrical properties were studied. The mechanism of charge carrier transport in these films and the influence of annealing on the type and mechanism of conductivity were investigated.     

密度泛函理论研究ScnO(n=1—9)团簇的结构、稳定性与电子性质

采用基于密度泛函理论的BP86/CEP-121G （O原子采用6-311G^**基组）方法,对Sc_nO （n=1—9）团簇的几何结构、能量与稳定性、电子结构性质及其随团簇尺寸的变化趋势进行了研究.随着团簇原子个数的增加,O原子从位于Sc_n团簇结构的边缘转变为占据团簇的内部位置.O原子的掺入增加了Sc_n团簇的稳定性,使其能隙升高,并改变了其稳定性及电子结构性质随团簇尺寸变化的规律;含有偶数个Sc原子的氧化物团簇比其周围邻近的含有奇数个Sc原子的氧化物团簇具有相对较高的稳定性.Sc_nO团簇电离势的理论计算值与实验值符合得较好,而其电子亲和势呈现振荡交替上升的变化趋势;用最大化学硬度规律等方法表征了Sc_nO氧化物团簇的稳定性和电子结构性质. 关键词： nO团簇')" href="#">Sc_nO团簇 几何结构 电子性质 密度泛函理论     

SimCn （m+n≤7）团簇的密度泛函研究

使用密度泛函理论（DFT）的杂化密度泛函B3LYP方法在6-31G*基组水平上对Si_mC_n（m+n≤7）团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构. 并对最稳定结构的平均结合能（E_b）,二阶能量差分（Δ₂E）和能隙（E_g）等进行了理论研究. 结果表明,随着原子个数的增加,SiC二元团 关键词： mC_n （m+n≤7）团簇')" href="#">Si_mC_n （m+n≤7）团簇 密度泛函理论 结构与性质     

(HMgN3)n(n=1–5)团簇结构与性质的密度泛函理论研究

利用密度泛函理论在B3LYP/6-311G^*水平上对叠氮化合物(HMgN₃)_n(n=1–5)团簇各种可能构型进行了几何优化,预测了各团簇的最稳定结构. 并对最稳定结构的成键特性、电荷分布、振动特性及稳定性进行理论研究. 结果表明:HMgN₃团簇最稳定结构为直线型;(HMgN₃)_n(n=2,5)团簇最稳定结构为叠氮基中N原子和金属原子相连构成Mg–N–Mg结构;(HMgN₃)_n(n=3,4)团簇最稳定结构为叠氮基与Mg原子相互链接形成的环状结构. 团簇最稳定结构中金属Mg原子均显示正电性,H原子均显示负电性,叠氮基中间的N原子显示正电性、两端的N原子显示负电性,且与Mg原子直接作用的N原子负电性更强. Mg–N键和Mg–H键为典型的离子键,叠氮基内N原子之间是共价键. 团簇最稳定结构的红外光谱分为三部分,其最强振动峰均位于2258–2347 cm^-1,振动模式为叠氮基中N–N键的反对称伸缩振动. 叠氮基在团簇和晶体中结构不变,始终以直线型存在. 稳定性分析显示,(HMgN₃)₃团簇相对于其他团簇更为稳定. 关键词： 3)_n(n=1–5)团簇')" href="#">(HMgN₃)_n(n=1–5)团簇 叠氮基 密度泛函理论 结构与性质     

密度泛函理论研究BnNi(n=6—12)团簇的结构和磁性

基于第一性原理,用密度泛函理论中的广义梯度近似(generalized gradient approximation,GGA)方法,在充分考虑自旋多重度的前提下,优化并得到了B_n(n=6—12)和B_nNi(n=6—12)团簇的平衡构型,按照能量最低原理确定其基态结构. B_n团簇的计算结果与已有的理论结果相一致. 当Ni原子掺杂在B_n团簇 关键词： nNi团簇')" href="#">B_nNi团簇 基态结构 磁性     

Correlation inequalities for vector spin models

Correlation inequalities forn-vector spin models (n 2) are reviewed. A relatively simple and unified derivation of the inequalities is achieved, using duplicate variable methods, for spin dimensionalitiesn=2 (plane rotator model),n=3 (classical Heisenberg model), andn=4. Although correlation inequalities are lacking forn > 4, new proofs are presented for the comparison inequalities relating correlations for systems with arbitrary spin dimensionality to corresponding correlations for systems with low spin dimensionality (n = 1 or 2).Research supported by National Science Foundation under Grant DMR 76-23071.     

Geometrical, electronic, and magnetic properties of small AunSc (n=1-8) clusters

Geometrical, electronic, and magnetic properties of the Sc-doped gold clusters, Au_nSc (n=1-8), have been studied using the density-functional theory within the generalized gradient approximation. An extensive structural search shows that the Sc atom in low-energy Au_nSc isomers tends to occupy the most highly coordinated position. The substitution of a Sc atom for an Au atom in the Au_n+1 cluster markedly changes the structure of the host cluster. Moreover, we confirm that the ground-state Au₆Sc cluster has a distortion to a lower D_2h symmetry. The relative stabilities and electronic properties of the lowest-energy Au_nSc clusters are analyzed based on the averaged binding energies, second-order energy differences, fragmentation energies, chemical hardnesses, and HOMO-LUMO gaps. It is found that the magic Au₃Sc cluster can be perceived as a superatom with high chemical stability and its HOMO-LUMO gap is larger than that of the closed-shell Zr@Au₁₄ cluster. The high symmetry and spin multiplicity of the Au₃Sc and Au₆Sc clusters are responsible for their large vertical ionization potential and electron affinity. The magnetism calculations indicate that the magnetic moment of the Sc atom in the ground-state Au_nSc (n=2-8) clusters gradually decreases for even n and is completely quenched for odd n.     

密度泛函理论对AunSc3(n=1—7)团簇结构和性质的研究

采用密度泛函理论中的广义梯度近似(GGA)对Au _{n Sc3(n=1—7)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算.结果表明,与纯金团簇相比,AunSc3 较早出现了立体结构,三角双锥结构的Au2Sc3是AunSc3(n>2)团簇生长的基元;Sc原子的掺杂提高了增强了Au 关键词： n} Sc₃团簇')" href="#">Au_n Sc₃团簇 几何结构 电子性质     

关于Al_nC和Al_nC~+(n=1—8)团簇结构和稳定性的研究

通过采用7种密度泛函理论DFT方法对AlnC进行计算,所得结果与实验数据比较,选择了B3lyp方法和6-311G(d)基组对AlnC及AlnC+(n=1—8)团簇进行结构优化和频率分析,得到了AlnC及AlnC+基态以及亚稳态结构.当n从小到大变化时,这些团簇的结构从平面向立体过渡,平面构型以三角形为主,立体构型主要是三棱柱笼状结构;在这些团簇中的高对称性结构中,中性团簇和阳离子只能有其一是稳定构型;在所研究的团簇中,Al2C和Al5C团簇较为稳定.     

Structures, stabilities and electronic properties of FePbn (n=1-14) clusters: Density-functional theory investigations

The structures, stabilities and electronic properties of FePb_n (n=1-14) clusters have been studied using the density-functional theory (DFT). Extensive search of the ground-state structures has been carried out by considering a larger number of structural isomers for each cluster size. The Fe atom gradually falls into the interior of the Pb framework as the number of Pb atom increases from 1 to 14. The FePb_n clusters at n=3, 5, 10, 12 have relatively higher stability by analyzing the averaged binding energy and the second-order energy difference. Especially, FePb₁₂ is more stable, owing to its highest symmetrical icosahedron structure. The magnetic moments of FePb_n clusters do not quench when Fe atom is encapsulated in the Pb framework and mostly originate from 3d state of Fe atom.     

密度泛函理论研究Scn，Yn和Lan(n=2—10)团簇的稳定性、电子性质和磁性

通过采用密度泛函理论对Sc₂,Y₂和La₂基本性质的计算,选择在较优理论水平下系统地研究了Sc_n, Y_n和La_n(n=2—10)团簇的几何结构、稳定性、电子性质和磁性及其随团簇尺寸的变化趋势.此同族三种团簇的稳定性由原子密堆集几何结构效应决定,幻数均表现出一致的结果.La_n团簇的能隙比 关键词： n')" href="#">Sc_n n和La_n团簇')" href="#">Y_n和La_n团簇 密度泛函理论 电子性质 磁矩     

密度泛函理论研究Run和RunAu(n=1-12)团簇的结构和电子性质

采用密度泛函理论中的广义梯度近似(GGA) 对 Ru_n Au和Ru_n 团簇的几何构型进行优化,并对能量、频率、电子性质和磁性质进行了计算. 结果表明,Ru_n Au团簇的最低能量结构可以通过Au原子代替Ru_n+1团簇中的Ru原子生长而成.除了局域的结构畸变,Ru_n Au和Ru_n+1团簇具有相似的几何结构.二阶能量差分、电离势、亲和势和分裂能表明Ru₅, Ru₈, Ru₅Au, Ru₈Au 是稳定的团簇,Au的掺杂没有改变Ru_n 的相对稳定性.通过电子性质的分析发现,当Au原子掺杂在Ru_n 中,团簇的化学活性增加,且团簇的能隙主要由电子的配对效应决定;对于大多数团簇来说,Au原子掺杂提高了Ru_n Au的磁矩. 关键词： n Au和Ru_n 团簇')" href="#">Ru_n Au和Ru_n 团簇 几何结构 电子性质     

Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN

The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W₂B₅/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W₂B₅-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C.     

密度泛函理论研究MgnOn(n=2—8)团簇的结构和电子性质

采用密度泛函理论中的广义梯度近似对Mg_nO_n(n=2—8)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算.结果表明,当n=2,3时,团簇的最低能量结构是平面结构;当n≥4时, 团簇的最低能量结构可以看成是由Mg₂O₂和Mg₃O₃单元组成的三维结构.O—Mg—O的钝角和较多的电荷转移对团簇的稳定性 关键词： nO_n团簇')" href="#">Mg_nO_n团簇 几何结构 电子性质     

Structural and spectroscopic properties of small Pun （n= 2-5） molecules

The equilibrium structures and the electronic, spectroscopic and thermodynamic properties of small Pu_n (n=2-5) molecules are systematically investigated using the methods of general gradient approximation (GGA) of density functional theory (DFT). The results show that the bond length of the lowest-energy structure of Pu₂ is 2.578 AA. The ground state structure of Pu₃ is a triangle with D_3h symmetry, whereas for Pu₄, the ground state structure is a square (D_4h) and the spin polarization of 16 for molecule Pu₅ with square geometry (D_4h) is the most stable structure. For the ground state structures, the vibrational spectra as well as thermodynamic parameters are worked out. In addition, the values for the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) along with the energy gap of all the Pu_2-5 structures are presented. The relevant structural and chemical stabilities are predicted.     

NiMgn(n=1—12)团簇的第一性原理研究

采用基于密度泛函理论(DFT)中的广义梯度近似 (GGA),在考虑自旋多重度的情况下,对NiMg_n(n=1—12)团簇进行了构型优化,频率分析和电子性质计算.结果表明：n=1,2时,体系的基态为自旋三重态,n≥3时,为单重态;Ni原子掺杂使主团簇结构发生了明显变化. n≤8时,三角双锥,四角双锥结构主导着NiMg_n基态团簇的生长行为; n在9—12之间时,主团簇Mg_n+1(n=1—12)的基于三棱柱构型的基态演化行为发生了一定程度的改变;n≥6时,Ni原子陷入了主团簇内部;掺杂使体系的平均结合能增大,能隙减小;n=4,6,10是团簇的幻数;不同尺寸团簇的s, p, d轨道杂化中,Ni原子3d, 4p成分所起作用不同; NiMg₆基态结构具有很高的对称性(O_h),很好的稳定性和化学活性,能隙仅为0.25eV. 关键词： n团簇')" href="#">NiMg_n团簇 几何结构 稳定性 化学活性