Aluminium anodising in ultra-dense sulfate baths: discovery by overall kinetic and potentiometric studies of the critical role of interface colloidal Al2(SO4)3 nanoparticles in the mechanism of growth and nanostructure of porous oxide coatings

The solubility of Al₂(SO₄)₃ in H₂SO₄ at different concentrations was determined and showed a minimum at 95% w/v. Overall kinetic and potentiometric studies of Al anodising were performed in large ranges of concentrations of saturated H₂SO₄ solutions and current densities. During anodising quasi-steady-state supersaturation and unsaturation conditions for concentrations below and above 95% w/v dominate in the pore-filling solution affecting those in the oxide–electrolyte interface. Interface colloidal Al₂(SO₄)₃ nanoparticles form occupying surface fractions increasing with salt concentration, supersaturation, field strength in the pore base surface and current density increase and temperature decrease. These control the mechanism and kinetics of growth and structural parameters of films and impose the growth of non-pitted uniform films up to current densities higher than in unsaturated baths, more effectively under supersaturation conditions. Well-defined peaks of structural parameters appear depending on thickness and current. Thus optimal regularly grown films of desired nanostructure and the introduction of new anodising technologies can be achieved.     

Tribochemistry and kinetics of Al2(SO4)3·xH2O decomposition

The thermal decomposition of tribochemically activated Al₂(SO₄)₃·xH₂O was studied by TG, DTA and EMF methods. For some of the intermediate solids, X-ray diffraction and IR-spectroscopy were applied to learn more about the reaction mechanism. Thermal and EMF studies confirmed that, even after mechanical activation of Al₂(SO₄)₃·xH₂O, Al₂O(SO₄)₂ is formed as an intermediate. Isothermal kinetic experiments demonstrated that the thermochemical sulphurization of inactivated Al₂(SO₄)₃·xH₂O has an activation energy of 102.2 kJ·mol^?1 in the temperature range 850–890 K. The activation energy for activated Al₂(SO₄)₃·xH₂O in the range 850–890 K is 55.0 kJ·mol^?1. The time of thermal decomposition is almost halved when Al₂(SO₄)₃·xH₂O is activated mechanically. The results permit conclusions concerning the efficiency of the tribochemical activation of Al₂(SO₄)₃·xH₂O and the chemical and kinetic mechanisms of the desulphurization process.     

Solid surface and field catalysed interface formation of colloidal Al<Subscript>2</Subscript>(SO<Subscript>4</Subscript>)<Subscript>3</Subscript> during Al anodizing affecting the kinetics and mechanism of development and structure of porous oxides

Overall kinetic and potentiometric studies of the growth of porous anodic alumina films in saturated H₂SO₄+Al₂(SO₄)₃ electrolyte showed non-saturation conditions inside the pores and supersaturation conditions at the pore surface/electrolyte interface where the field and the solid surface catalyse the formation of colloidal Al₂(SO₄)₃ micelles. Suitable high-strength field thermodynamically sustained electrochemical and chemical kinetic equations were formulated. It was shown that the diameter and surface fraction of charge exchange at the pore bases, the real pore wall surface fraction where oxide dissolution occurs, and its rate are strongly affected by the conditions. The mechanism of growth and structure of the films are quite different from those in H₂SO₄. A mechanism of regular film growth is imposed and the critical current density, above which pitting appears, strongly increases. The formulated theory may predict improved or new Al anodizing technologies. Electronic Publication     

Synthesis, structure, and properties of chromium(III) sulfates

Reactions between CrO₃ and 50- are studied at temperatures up to the boiling point of the acid. Depending on the H₂SO₄ concentration and synthesis temperature, Cr₂(SO₄)₃, CrH(SO₄)₂, (H₃O)[Cr(SO₄)₂], Cr₂(SO₄)₃·H₂SO₄·4H₂O (gross formula), and (H₅O₂)[Cr(H₂O)₂(SO₄)₂], are obtained as identified reaction products in addition to the incompletely characterized chromic-sulfuric acid. The Cr^III-based sulfates are characterized by X-ray powder diffraction, thermogravimetric, and magnetic susceptibility measurements. The nuclear and magnetic structures of Cr₂(SO₄)₃ at are determined, the structure type of (H₃O)[Cr(SO₄)₂] is established, and the crystal structure of (H₅O₂)[Cr(H₂O)₂(SO₄)₂] is firmly stipulated. Magnetic susceptibility data suggest that the samples of CrH(SO₄)₂ are in a micro-crystalline rather than in an amorphous state. All Cr^III-based sulfates synthesized in this study appear to undergo paramagnetic-to-antiferromagnetic transitions at around .     

聚合Al13晶体的制备及表征

近几十年来 , 环境污染的日益严重使人们对健康问题和全球生态系统越来越关注 ?由于一个元素的生物可给性在很大程度上取决于它存在的物理化学形态和浓度 , 准确测定环境和生物体系中的痕量元素的不同形态是研究这些元素的生物毒性 ? 生物有效性和传输机理的关键 ?形态分析成了     

Thick rhodium electrodeposition on copper backing as the target for production of palladium-103

The Rh target preparation for production of ¹⁰³Pd was investigated by using a thick electrodeposition of rhodium metal on a copper backing. The electrodeposition experiments were performed in acidic sulfate media using RhCl₃·3H₂O, Rh₂(SO₄)₃ (recovered from hydrochloric acid solution) and also in the commercially available Rhodex plating baths. For high current beam irradiation of a Rh target, the qualities of the deposit of the three baths were compared in terms of thermal shock, crack-free and morphology criteria. The quality of the plating obtained from a sulfate bath [Rh₂(SO₄)₃] was comparable with the one obtained from commercially available Rhodex bath. The optimum conditions of the electrodepositions were as follows: 4.8 g rhodium [as Rh₂(SO₄)₃], pH 2, DC current density of ca 8.5 mA·cm^–2, 1% sulfamic acid (w/v) and temperature 40–60 °C.The authors would like to thank their colleagues at the VUB-Cyclotron department for help and assistance in preparation of the electrodeposition equipment and taking the SEM photomicrographs and also K. Aardaneh (NRCAM) for his assistance.     

Thick rhodium electrodeposition on copper backing as the target for production of palladium-103

The Rh target preparation for production of ¹⁰³Pd was investigated by using a thick electrodeposition of rhodium metal on a copper backing. The electrodeposition experiments were performed in acidic sulfate media using RhCl₃·3H₂O, Rh₂(SO₄)₃ (recovered from hydrochloric acid solution) and also in the commercially available Rhodex plating baths. For high current beam irradiation of a Rh target, the qualities of the deposit of the three baths were compared in terms of thermal shock, crack-free and morphology criteria. The quality of the plating obtained from a sulfate bath [Rh₂(SO₄)₃] was comparable with the one obtained from commercially available Rhodex bath. The optimum conditions of the electrodepositions were as follows: 4.8 g rhodium [as Rh₂(SO₄)₃], pH 2, DC current density of ca 8.5 mA·cm^–2, 1% sulfamic acid (w/v) and temperature 40–60 °C.The authors would like to thank their colleagues at the VUB-Cyclotron department for help and assistance in preparation of the electrodeposition equipment and taking the SEM photomicrographs and also K. Aardaneh (NRCAM) for his assistance.     

A sol-gel route for the development of rare-earth aluminum borate nanopowders and transparent thin films

A new sol-gel route was applied to obtain Y_0.9Er_0.1Al₃(BO₃)₄ crystalline powders and amorphous thin films by using Al(acac)₃, B(OPrⁱ)₃, Y(NO₃)₃·6H₂O, and Er(NO₃)₃·5H₂O as starting materials dissolved in propionic acid and ethyl alcohol mixtures. Our study shows that propionic acid acts as good chelant agent for yttrium and erbium ions while ethyl alcohol allows to dissolve Al(acac)₃. This process makes the resulting sols very stable to obtain homogeneous gels and transparent amorphous thin films. In addition, the propionic acid prevents the sol precipitation, making easy porous- and crack-free thin film depositions. Chemical reactions involved in the complexation were discussed. As-prepared powders and films are amorphous and present a good thermal stability due to their high glass transition (746 °C) and crystallization temperatures (830 °C). This new sol-gel route showed to be adequate to obtain dense and crack-free thin films free of organic and hydroxyl groups that can be considered as promising materials to be used in integrated optical systems.     

Investigation on The Thermal Properties of Fe2O(SO4)2. Part II

Fe₂O(SO₄)₂ is a secondary product of the decomposition of FeSO₄⋅H₂O. Part I of this study presents results on the synthesis of Fe₂O(SO₄)₂ in gaseous environment containing either low or high concentration of oxygen. In this paper the existence of differences between the structures of Fe₂O(SO₄)₂ and Fe₂(SO₄)₃ is proved on the basis of a detailed thermal study of Fe₂O(SO₄)₂ upon dynamic heating (differential thermal analysis) and upon isothermal heating (thermal-analytic balance) in various gaseous environments as well as by presenting kinetic data on the processes of decomposition of both compounds. This revised version was published online in July 2006 with corrections to the Cover Date.     

TG/DTA/MS Study of the thermal decomposition of FeSO4·6H2O

The thermal decomposition of FeSO₄·6H₂O was studied by mass spectroscopy coupled with DTA/TG thermal analysis under inert atmosphere. On the ground of TG measurements, the mechanism of decomposition of FeSO₄·6H₂O is: i) three dehydration steps FeSO₄·6H₂O FeSO₄·4H₂O+2H₂O FeSO₄·4H₂O FeSO₄·H₂O+3H₂O FeSO₄·H₂O FeSO4+H₂O ii) two decomposition steps 6FeSO₄ Fe₂(SO₄)₃+2Fe₂O₃+2SO₂ Fe₂(SO₄)3 Fe₂O₃+3SO₂+3/2O₂ The intermediate compound was identified as Fe₂(SO₄)₃ and the final product as the hematite Fe₂O₃.     

Sol–gel Al2O3/ZrO2 duplex films for protection of a γ-TiAl based alloy against high temperature oxidation

Al₂O₃/ZrO₂ duplex films were deposited on a γ-TiAl based alloy by sol–gel processing starting from aluminum isopropoxide (Al(OC₃H₇)₃) and zirconium (IV) oxychloride octahydrate (ZrOCl₂ · 8H₂O) as raw materials. Isothermal oxidation at 900 and 1,000 °C in 0.1 MPa O₂ and cyclic oxidation at 1,000 °C in air of the coated and uncoated specimens were performed to investigate the effect of the duplex films on the oxidation behavior of the γ-TiAl alloy. The results of the isothermal oxidation tests indicated that the parabolic rate constants of the alloy were decreased due to the applied thin film. Additionally, the present film exhibited a beneficial effect on the cyclic oxidation resistance of the alloy in air. The duplex film could restrain the growth of TiO₂, causing an increase of the Al₂O₃ content in the oxide mixture and thus decreased the oxidation rate.     

Darstellung und Eigenschaften von Heteropolykationenverbindungen,IV: Darstellung und Struktur von Natriumdodekaaluminogalliumsulfat-Ikosihydrat,Na[GaO4Al12(OH)24(H2O)12](SO4)4 ·xH2O mitx∼20

Summary A chemical analyses of Na[GaO₄(Al₁₂(OH)₂₄(H₂O)₁₂](SO₄)₄ ·xH₂O withx20 [a=17.861 (4) Å; F 3 m-T _d ² ;Z=4] in connection with a crystal structure investigation confirmed the tetrahedral coordination of the gallium atom by oxygen atoms, as well as the far extending statistical distribution of the crystal water in the structure. The syntheses was done by neutralization of a satured aqueous aluminium chloride solution, mixed with metallic gallium and sodium sulfate, by an aqueous sodiumhydroxide solution.

     

Interaction Between Two Similar Plane Parallel Double Layers for (NH4)2Fe(SO4)2 or (NH4)2Cu(SO4)2 Type Complex Salt Electrolytes at Positive Surface Potential

Interaction energies between two similar plane parallel double layers for (NH₄)₂Fe(SO₄)₂ or (NH₄)₂Cu(SO₄)₂ type complex salt electrolytes at positive surface potential were expanded in a power series and accurate numeral results were given for 0.1 ≤ y _e  < y ₀ ≤ 20. The general expressions were given for the interaction energies of A _ν +B _ν′ +C_ν? type complex salt electrolytes at y > 0. The interaction energies for simple salts NaCl, CaCl₂, Na₂SO₄, FeCl₃, Na₃PO₄, Mg₃(PO₄)₂, Al₂(SO₄)₃, and complex salts (NH₄)₂Fe(SO₄)₂ or (NH₄)₂Cu(SO₄)₂ at y ₀ = 1 were compared. There was hardly difference between these simple salts and this complex salt for the interaction energies. The interaction energy for complex salt (NH₄)₂Fe(SO₄)₂ was close to that for simple salt Na₃PO₄.

Supplemental files are available for this article. Go to the publisher's online edition of the Journal of Dispersion Science and Technology to view the free supplemental file.     

Ni0.8Co0.15Al0.05C2O4@Graphene的合成及电化学性能研究

过渡金属氧化物/石墨烯复合材料具有优异的电化学性能被广泛应用在锂离子电池中。本文以硫酸镍、硫酸钴、硫酸铝、草酸为原料按一定的物质的量比配制成溶液,在120°C的条件下水热反应12小时,得到多元过渡金属氧化物前驱体Ni_0.8Co_0.15Al_0.05C₂O₄(NCA-C₂O₄);该前驱体经聚烯丙基胺盐酸盐修饰后,与氧化石墨烯进行复合并还原得到石墨烯包覆的多元过渡金属氧化物/石墨烯负极材料Ni_0.8Co_0.15Al_0.05C₂O₄@Graphene(NCA-C₂O₄@G)。对材料的结构、形貌和电化学性质进行了表征。扫描电镜测试结果显示样品粒度均一,具有两端不规则长方体形貌。电化学性能测试结果表明：石墨烯包覆后的NCA-C₂O₄@G充放电容量高于前驱体NCA-C₂O₄,NCA-C₂O₄@G复合材料在0.1C电流密度 (1C=1000 mAh/g)下首次放电比容量为1956 mA h/g;经过0.1C、0.2C、0.5C、1C、2C高倍率循环后,当测试电流密度恢复至100 mA/g时,复合材料比容量可迅速回升至720 mA h/g,并在随后50次循环中比容量保持稳定,显示出良好的循环稳定性和倍率性能。     

Two Ce(SO4)2·4H2O polymorphs: Crystal structure and thermal behavior

Syntheses, crystal structures and thermal behavior of two polymorphic forms of Ce(SO₄)₂·4H₂O are reported. The first modification, α-Ce(SO₄)₂·4H₂O (I), crystallizes in the orthorhombic space group Fddd, with a=5.6587(1), b=12.0469(2), c=26.7201(3) Å and Z=8. The second modification, β-Ce(SO₄)₂·4H₂O (II), crystallizes in the orthorhombic space group Pnma, with a=14.6019(2), b=11.0546(2), c=5.6340(1) Å and Z=4. In both structures, the cerium atoms have eight ligands: four water molecules and four sulfate groups. The mutual position of the ligands differs in (I) and (II), resulting in geometrical isomerism. Both these structures are built up by layers of Ce(H₂O)₄(SO₄)₂ held together by a hydrogen bonding network. The dehydration of Ce(SO₄)₂·4H₂O is a two step (I) and one step (II) process, respectively, forming Ce(SO₄)₂ in both cases. During the decomposition of the anhydrous form, Ce(SO₄)₂, into the final product CeO₂, intermediate xCeO₂·yCe(SO₄)₂ species are formed.     

稀碱溶液中水热法制备柔性TiO2纳米须薄膜的生长机制及表征

以柔性不锈钢基底上经磁控溅射沉积的钛膜为钛源, 在1 mol·L^-1的低浓度NaOH溶液中水热法制备了朝基底上方取向生长的大长径比柔性TiO₂纳米须薄膜, 考察了钛膜沉积条件对纳米须薄膜的影响, 系统研究了水热反应条件对薄膜生长过程的影响及TiO₂纳米须薄膜的形成机制. 通过场发射扫描电镜(FESEM)、X射线能谱仪(EDS)、高分辨透射电子显微镜(HRTEM)、X射线衍射仪(XRD)等对样品进行了表征. 结果表明, 与室温沉积的钛膜相比, 600 ℃下沉积的钛膜水热后得到的纳米线薄膜与基底的附着力更好. 所得TiO₂纳米须为单晶锐钛矿, 经由Na₂Ti₂O₄(OH)₂、H₂Ti₂O₅·H₂O转变而来. 纳米须形成于水热阶段, 平行于Na₂Ti₂O₄(OH)₂的(100)晶面择优取向生长, 纳米须经历了纳米片→纳米线束→纳米线的裂解生长过程. 朝基底上方取向生长的纳米须薄膜的形成是低浓度NaOH溶液与较高水热温度(220 ℃)协同作用的结果. 进一步在Na₂SO₄溶液中研究了薄膜电极的光电化学性能, 结果表明, TiO₂纳米须薄膜的光电性能明显优于零维纳米颗粒薄膜和二维纳米片薄膜, 显示了良好的应用前景.     

Glass formation in the systems Al2(SO4)3-MSO4-H2O (M = Cd2+, Zn2+, Mg2+) and Al2(SO4)3-Fe2(SO4)3-H2O

The glass formation region boundaries were found in the systems Al₂(SO₄)₃-MSO₄-H₂O, where M = Cd²⁺, Zn²⁺, and Mg²⁺, and Al₂(SO₄)₃-Fe₂(SO₄)₃-H₂O. The causes of the differences in glass-forming ability between the studied systems were analyzed. The structures and properties of glassy Al₂(SO₄)₃ · 11H₂O and Fe₂(SO₄)₃ · 11H₂O were compared.     

Formation of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> bilayer using atomic layer deposition and its application to dynamic random access memory

To enhance film conformality together with electrical property suitable for dynamic random access memory (DRAM) capacitor dielectric, the effects of oxidant and post heat treatment were investigated on aluminum and titanium oxide (Al₂O₃–TiO₂) bilayer (ATO) thin film formed by atomic layer deposition method. For the conformal deposition of Al₂O₃ thin film, the O₃ oxidant required a higher deposition temperature, more than 450 °C, while H₂O or combined oxygen sources (H₂O+O₃) needed a wide range of deposition temperatures ranging from 250 to 450 °C. Conformal deposition of the TiO₂ thin film was achieved at around 325 °C regardless of the oxidants. The charge storage capacitance, measured from the ATO bilayer (4 nm Al₂O₃ and 2 nm TiO₂) deposited at 450 °C for Al₂O₃ and 325 °C for TiO₂ with O₃ oxidant on the phosphine-doped poly silicon trench, showed about 15% higher value than that of 5 nm Al₂O₃ single layer thin film without any increase of leakage current. To maintain the improved electrical property of the ATO bilayer for DRAM application, such as enhanced charge capacitance without increase of leakage current, upper electrode materials and post heat treatments after electrode formation must be selected carefully. Dedicated to Professor Su-Il Pyun on the occasion of his 65th birthday.     

Fe2(SO4)3·xH2O-catalyzed per-O-acetylation of sugars compatible with acid-labile protecting groups adopted in carbohydrate chemistry

Fully acetylated saccharides are inexpensive and very useful starting materials for the synthesis of many naturally occurring glycosides, oligosaccharides, and glycoconjugates. Ferric sulfate hydrate (Fe₂(SO₄)₃·xH₂O) was found to be a valuable Lewis acid promoter in the per-O-acetylation reaction of saccharides with acetic anhydride in 100% of conversion rate and 88-99% yields. Interestingly, the procedure is perfectly compatible with the presence of a variety of acid-labile protecting groups, such as isopropylidene, benzylidene, trityl, and TBDMS groups. The reactions were simply performed by stirring the mixture of a sugar with a slight excessive acetic anhydride in the presence of 2.0 mol % of Fe₂(SO₄)₃·xH₂O at rt and the pure products were obtained by a simple dilution of the reaction mixture with dichloromethane and washings with aqueous Na₂CO₃.     

Structure and Optical Properties of 0.1BiFeO3-0.9SrBi2Nb2O9 Thin Films Using a Modified Sol-Gel Technique

Fe-doped SrBi₂Nb₂O₉ precursor solution was synthesized using bismuth nitrate Bi(NO₃)₃·5H₂O, strontium nitrate Sr(NO₃)₂, iron nitrate Fe(NO₃)₃·9H₂O, and niobium ethoxide Nb(OC₂H₅)₅ as starting materials, ethylene glycol monomethyl ether (C₃H₈O₂) as the solvent. 0.1BiFeO₃-0.9SrBi₂Nb₂O₉ thin films were prepared on fused quartz substrates using sol-gel processing. The surface morphology and crystal structure and optical properties of the thin films were investigated. The thin film annealing at 400°C were found to be amorphous, and the thin films crystallize to a perovskite structure after a post-deposition annealing at 600°C for 1 h in air. The grain of thin film was evenly distributed. The thin films exhibit the designed optical transmission, while the optical transition is indirect in nature. Their optical band gap is about 2.5 eV.