含氧空位BaWO4晶体的电子结构和吸收光谱的研究

用基于密度泛函理论框架下的CASTEP软件对完整BaWO4晶体(BWO)和含氧空位BaWO4晶体的电子结构和吸收光谱进行了模拟计算。计算结果表明,这两种类型的BWO晶体的光学性质是各向异性的,与晶体结构的对称性相吻合。完美的BWO晶体在可见光区没有吸收,但含氧空位的BWO晶体,在可见光区出现吸收带,峰值位置与实验观测值相符。这说明峰值位于395 nm的该吸收带与BWO晶体中氧空位的存在有关。     

掺杂Rh离子SrTiO3晶体缺陷形成能和电子结构的研究

使用CRYSTAL-09软件包模拟计算了完整SrTiO3晶体的电子结构以及Rh离子掺杂SrTiO3晶体的缺陷形成能和电子结构.结果表明Rh离子在晶体中将优先占据Sr格位;Rh掺杂SrTiO3晶体在禁带中出现了一个4d态杂质能级,导致禁带宽度减小,可见光区的光催化活性提高;解释了Rh掺杂SrTiO3晶体具有较高H2产量的原因机理.     

单空位缺陷扶手椅型MoS2纳米带结构与电子性质研究

基于密度泛函理论(DFT)的第一性原理计算方法,研究了单硫空位缺陷扶手椅型二硫化钼纳米带(AMoS2NR)的结构与电子性质.结果表明,优化的AMoS2NR纳米带边缘上Mo原子较S原子向纳米带内侧收缩;引入空位缺陷后,边缘上Mo原子向纳米带内侧收缩加剧,稳定性降低;空位缺陷纳米带相比完整纳米带,带隙减小;同时,空位缺陷处原子部分态密度降低,相应的能带线分布稀疏.     

LaAlO3晶体点缺陷的电子结构和磁性的第一性原理研究

利用密度泛函理论计算了LaAlO3晶体点缺陷的电子结构和磁学性质.结果表明,LaAlO3中La,Al空位缺陷具有铁磁性,O空位缺陷没有磁性.La,Al空位磁性源于体系中所有O原子2p轨道的部分极化.     

空位缺陷对锯齿型硅纳米带电子结构和磁性的影响

基于密度泛函理论,采用广义梯度近似下的第一性原理投影缀加波赝势方法,系统的研究了单空位(双空位)缺陷对锯齿型硅纳米带电子结构和磁性的影响.结果表明:不同位置的单原子空位(双原子空位)锯齿型硅纳米带,结构弛豫后,都能得到一个九边环(八边环),同类缺陷更容易在锯齿型硅纳米带的边缘区域形成;与完整的锯齿型硅纳米带相比,中心位置含空位缺陷(单原子或双原子空位)的锯齿型硅纳米带由原有的反铁磁半导体转变为反铁磁金属;非中心位置含空位缺陷(单原子或双原子空位)的锯齿型硅纳米带则具有铁磁态金属性, 在远离缺陷的纳米带边缘硅原子上局域的分布着差分电荷密度,这使得锯齿型硅纳米带在自旋电子学领域拥有可观的应用前景.     

第一原理研究氧空位对BaTiO3晶体的电子结构和光学性质的影响

根据密度泛函理论,采用模拟计算软件CASTEP计算了含有氧空位钛酸钡晶体的电子结构和光学性质.结果表明,氧空位的存在没有在禁带中引入缺陷能级,但氧空位的存在对晶体的光学性质产生显著的影响.并得到氧空位的存在将引起钛酸钡晶体出现440～450 nm吸收峰的结论.     

PbWO4晶体中铅氧空位对对晶体光学性质的影响

本文利用完全势缀加平面波局域密度泛函近似,按照能量最低原理采用共轭梯度方法,对含铅氧空位对的PbWO4晶体进行结构优化处理.在此基础上,计算了含铅氧空位对的PbWO4晶体的电子结构、复数折射率、介电函数及吸收光谱,并与完整的PbWO4晶体进行了比较.结果表明:PWO晶体中铅氧空位对的存在对PbWO4晶体的光学性质没有显著的影响.     

钙钛矿型氧化物BaBO3-δ （B=Fe、Co、Nb）电子结构和氧空位形成能的第一性原理研究

基于第一性原理的密度泛函理论,分别对钙钛矿型氧化物BaFeO3、BaCoO3和BaNbO3的电子结构和氧空位形成能进行了理论模拟,经优化后得到的晶胞参数与实验文献值吻合良好。通过比较密度泛函理论计算得到的晶格能和氧空位形成能,发现体系稳定性表现为BaCoO3相似文献   

立方相KNbO3晶体本征空位点缺陷的电子结构研究

利用第一性原理从头计算方法对立方相KNbO3晶体的肖特基缺陷的稳定性、能带结构、电子态密度和磁性性质进行了研究.发现含本征点缺陷的KNbO3体系结构稳定;K,Nb空位诱导KNbO3缺陷晶体产生铁磁性;O空位则无此性质.K空位诱导KNbO3缺陷晶体磁性源于O原子2p轨道退简并;Nb空位诱导KNbO3缺陷晶体磁性源于O-2p电子极化.     

锰酸镧晶体本征点缺陷的模拟研究

本文利用晶格动力学GULP软件模拟计算了理想立方结构LaMnO3晶体的本征缺陷以及氧空位迁移能.利用离子之间的相互作用势计算得到的结果与实验结果吻合得很好.同时计算了理想立方结构LaMnO3的体弹模量,杨氏模量,泊松率,弹性常数,静介电常数,高频介电常数.通过对本征缺陷形成能的分析得到以下结论:LaMnO3晶体中主要存在的各类缺陷为氧空位、填隙锰、氧的夫伦克尔缺陷和锰替位镧反位缺陷;氧空位的迁移能为0.362 eV,它表明氧在晶体中容易迁移.     

Modelling of point defects in monoclinic zirconia

We present the results of plane wave density functional theory calculations of oxygen vacancies and interstitial oxygen atoms in monoclinic zirconia. After calculating the incorporation energies and structures of interstitial oxygen atoms and formation energies of neutral oxygen vacancies, we consider the electron affinities and ionisation potentials of these defects. These properties are especially important at the silicon/oxide interface in MOSFET devices, where silicon may serve as an electron and hole source. The results demonstrate that interstitial oxygen atoms and positively charged oxygen vacancies can trap electrons if the electron source (band offset) is higher than ∼2 eV above the top of the zirconia valence band.     

Cr掺杂锐钛矿相TiO2光学性质的第一性原理研究

本文对Cr掺杂TiO2进行了基于密度泛函理论的第一性原理研究.模拟计算了完整及Cr掺杂TiO2的电子结构,介电函数及吸收光谱的偏振特性.计算结果表明完整的锐钛矿型TiO2晶体在可见光范围内无吸收;掺Cr后晶体的禁带宽度减小到2.25 eV,吸收边红移,并在可见光区域出现了2.51 eV(495 nn)的吸收峰,表明Cr掺杂有利于提高TiO2对太阳光的吸收.计算结果与实验结果基本相符.     

Mg,N掺杂β-Ga2O3光电性质的第一性原理计算

通过基于密度泛函理论的第一性原理计算,研究了Mg单掺杂、N单掺杂和不同浓度的Mg-N共掺杂β-Ga₂O₃的结构性质、电子性质和光学性质,以期获得性能比较优异的p型β-Ga₂O₃材料。建立了五种模型:Mg单掺杂、N单掺杂、1个Mg-N共掺杂、2个Mg-N共掺杂和3个Mg-N共掺杂β-Ga₂O₃。经过计算,3个Mg-N共掺杂β-Ga₂O₃体系的结构最稳定。此外,在5种模型中,3个Mg-N共掺杂β-Ga₂O₃体系的禁带宽度是最小的,并且N 2p和Mg 3s贡献的占据态抑制了氧空位的形成,从而增加了空穴浓度。因此,3个Mg-N共掺杂β-Ga₂O₃体系表现出优异的p型性质。3个Mg-N共掺杂体系的吸收峰出现明显红移,在太阳盲区的光吸收系数较大,这归因于导带Ga 4s、Ga 4p、Mg 3s向价带O 2p、N 2p的带间电子跃迁。本工作将为p型β-Ga₂O₃日盲光电材料的研究和应用提供理论指导。     

扫描电镜用于人工蛋白石模板中填充InP的形貌研究

扫描电子显微镜是对人工欧泊光子晶体进行形貌观察、研究的重要手段.本文利用扫描电子显微镜对人工欧泊晶体及其填充InP后的形貌进行了分析.结果发现,二氧化硅微球短程有序而在较大的区域则出现台阶、空位和失配等缺陷;在选定生长条件下,InP在SiO2球空隙间具有较高的填充率和较好的结晶质量.此项研究为制备三维InP光子晶体提供了科学依据.     

富硼体系中立方氮化硼晶体的生长

本文在hBN-Li3N体系中添加不同含量的单质硼(B),研究了cBN晶体在富B条件下的生长特性.结果表明,B进入晶体的位置具有明显的区域选择性.B以占据N(111)面内N空位的方式进入晶体,并与原有的N原子一起形成一个B原子和N原子的(111)面.随着B进入量的增加,越来越多的B原子取代N空位,B和N原子的混合面与邻近的B(111)面叠加,在晶体的中心部位形成颜色较深的三角形阴影并逐步扩展,最后,使晶体完全变成黑色.由于B占据N空位造成原来N的(111)面上有大量硼原子存在,使得晶体沿＜111＞方向生长困难而有利于沿＜100＞方向生长, 从而形成了八面体或类球形晶体.同时,由于加入的B与部分Li3N发生化学反应也可生成cBN,因此,体系中cBN晶体的形成受两种机制控制:一种为溶解析出过程,另一种为化学反应过程.cBN的产率随着B添加量的增加而降低的实验结果表明,溶解析出过程占主导地位.     

Role of oxygen vacancies in the coloration of 0.65Pb(Mg1/3Nb2/3)O3‐0.35PbTiO3 single crystals

The coloration and oxygen vacancies in 0.65Pb(Mg_1/3Nb_2/3)O₃‐0.35PbTiO₃ (PMN‐PT(65/35)) (starting composition) single crystals grown by a so‐called modified Bridgman technique were investigated in this paper. Light yellow and dark brown colored crystals were generally observed for the typical as‐grown PMN‐PT(65/35) single crystals. X‐ray diffraction results demonstrated that they were both of pure perovskite structure, but good electric properties were only obtained for the light yellow crystal. X‐ray photoelectron spectroscopy (XPS) was used to investigate the electronic structure of its components. The O 1s photoelectron spectra of the dark brown colored crystals located at the higher binding energy side, which meant the existence of the more oxygen vacancies. It accordingly led to the formation of the low valence cations associated with the coloration of the crystals, which is also testified by the obtained X‐ray photoelectron spectra of Ti and Nb. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric properties of vacuum deposited Samarium Oxide sandwich structures

Samarium oxide films were prepared by vacuum thermal evaporation using tantalum boats. The effect of aging, frequency and annealing on capacitance and tan δ were studied for Al Sm₂O₃ Al capacitor structures. The variation in capacitance with frequency at low frequency region is quite considerable. The existence of oxygen vacancies were confirmed from the thermoluminescence studies of these oxide films. The results were discussed on the basis of oxygen vacancies existing in these films.     

Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth

It has been known that, in growing silicon from melts, vacancies (Vs) predominantly exist in crystals obtained by high-rate growth, while interstitial atoms (Is) predominantly exist in crystals obtained by low-rate growth. To reveal the cause, the temperature distributions in growing crystal surfaces were measured. From this result, it was presumed that the high-rate growth causes a small temperature gradient between the growth interface and the interior of the crystal; in contrast, the low-rate growth causes a large temperature gradient between the growth interface and the interior of the crystal. However, this presumption is opposite to the commonly-accepted notion in melt growth. In order to experimentally demonstrate that the low-rate growth increases the temperature gradient and consequently generates Is, crystals were filled with vacancies by the high-rate growth, and then the pulling was stopped as the extreme condition of the low-rate growth. Nevertheless, the crystals continued to grow spontaneously after the pulling was stopped. Hence, simultaneously with the pulling-stop, the temperature of the melts was increased to melt the spontaneously grown portions, so that the diameters were restored to sizes at the moment of pulling-stop. Then, the crystals were cooled as the cooling time elapsed, and the temperature gradient in the crystals was increased. By using X-ray topographs before and after oxygen precipitation in combination with a minority carrier lifetime distribution, a time-dependent change in the defect type distribution was successfully observed in a three-dimensional manner from the growth interface to the low-temperature portion where the cooling progressed. This result revealed that Vs are uniformly introduced in a grown crystal regardless of the pulling rate as long as the growth continues, and the Vs agglomerate as a void and remain in the crystal, unless recombined with Is. On the other hand, Is are generated only in a region where the temperature gradient is large by low-rate growth. In particular, the generation starts near the peripheral portion in the vicinity of the solid–liquid interface. First, the generated Is are recombined with Vs introduced into the growth interface, so that a recombination region is always formed which is regarded as substantially defect free. Excessively generated Is after the recombination agglomerate and form a dislocation loop region. Unlike conventional Voronkov's diffusion model, Is hardly diffuse over a long distance. Is are generated by re-heating after growth.[In a steady state, the crystal growth rate is synonymous with the pulling rate. Meanwhile, when an atypical operation is performed, the pulling rate is specifically used.]This review on point defects formation intends to contribute further silicon crystals development, because electronic devices are aimed to have finer structures, and there is a demand for more perfect crystals with controlled point defects.