Zn-Mg-Se-I2系统生长ZnMgSe单晶及其特征

以高纯的Zn、Mg以及Se2单质为生长原料,加入高纯的碘单质作为反应输运剂,采用化学气相输运(CVT)方法成功制备了ZnMgSe单晶,并且分别采用X射线衍射、双晶衍射、紫外可见分光光度计、红外光谱仪以及光致发光(PL)技术研究了晶体的结构、结晶质量以及光学性质.结果表明,制备的单晶结晶性能良好,在500 ～ 1500 nm波长范围内的透过率接近50;,在400 ～ 4000 cm-1波长范围内的透过率达到42;,在2.0～2.6 eV范围内有三个明显的空位与杂质发光带.以Zn、Mg及Se2单质为生长原料,在输运剂I2的帮助下可以实现ZnMgSe单晶的生长.     

单质直接气相生长ZnSe单晶

本文直接以高纯Zn、Se单质为原料,加入少量碘单质作为反应输运剂,用化学气相输运(CVT)的方法一步成功的生长出了ZnSe单晶.采用XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了生长的ZnSe晶体的结构、成份以及光学特性.结果表明,生长的ZnSe单晶具有较好结晶性能,成份接近理想的化学计量比,在500～2000nm范围内透过率达到65;～70;,在1.9～2.5 eV范围内存在与Zn空位和杂质能级相关的发光带.由Zn和Se单质在输运剂I2的辅助下一步直接生长ZnSe单晶是可行的.     

高纯MgSe多晶的化学气相合成及特性研究

以高纯Mg、Se单质为原料,NH4Cl作反应促进剂,温度为999～992℃,采用化学气相输运法(CVT)成功合成出MgSe多晶.采用X射线粉末衍射仪、紫外-可见-近红外分光光度计、傅立叶变换红外光谱仪以及光致发光测试系统研究了MgSe多晶的结构和光学特性.结果表明:合成物为MgSe多晶,具有NaCl型结构,禁带宽度Eg为1.98eV,在1.6eV附近内存在与施主-受主对辐射复合发光相关的发光带.研究证明由Mg、Se单质在促进剂NH4Cl辅助下直接合成MgSe多晶是一种较好的方法.     

CVT一步生长的ZnSe单晶的光电特性研究

本文采用化学气相输运(CVT)法,由Zn(5N)和Se(5N)一步直接生长了片状ZnSe单晶,并对其结构特性和光电性能进行分析。研究表明,生长出的ZnSe单晶仅显露(111)面,红外透过率约为40%～42%,具有较高的结晶质量。该ZnSe单晶可与In电极形成良好的欧姆接触,其体电阻率约为7.3×109Ω.cm。     

ZnSe薄膜的化学反应辅助热壁外延法生长及特性研究

本文通过将新型化学气相反应促进剂Zn(NH4)3Cl5引入到热壁外延系统中,以二元素单质Zn和Se为原料,直接在Si(111)衬底上生长了高质量的ZnSe晶体薄膜,薄膜成分接近理想化学计量比。研究了主要工艺参数对薄膜生长形貌和性能的影响。采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。研究结果表明,热壁温度和生长时间是影响ZnSe薄膜形貌的主要因素;气相反应促进剂在薄膜生长和调节成分方面扮演了关键角色,Zn(NH4)3Cl5的存在使得Zn(g)和Se2(g)合成ZnSe晶体的反应转变为气固非一致反应,从而更容易获得近乎理想化学计量比的ZnSe薄膜。ZnSe薄膜在氦镉激光激发下,室温下PL谱由近带边发射和(VZn-ClSe)组合的SA发光组成,而在飞秒激光激发下,仅在481nm处显示出强烈的双光子发射峰。     

ZnCl2·2NH4Cl结晶过程及其热分解行为

使用氯化锌(ZnCl2)和氯化铵(NH4Cl)制备了氯化锌铵(AZC,Ⅱ型,ZnCl2·2NH4Cl)晶体.采用X射线粉末衍射(XRD)技术研究了ZnCl2与NH4Cl摩尔比对晶体类型的影响.用热重分析(TC-DTG)手段研究了样品的热分解行为和非等温动力学特征.TG曲线结果表明AZC(Ⅱ)热分解由失NH4CI和ZnCl2热挥发两个步骤完成,TG和DTG曲线表明失NH4Cl包括4个微观过程.非等温分解动力学研究表明,失NH4Cl和znCl2热挥发两大步的表观活化能(E)分别为91.25 kJ·mol-1和104.76 kJ·mol-1,指前因子(A)分别为105.94s-1和104.51s-1.研究表明AZC(Ⅱ)晶体据具有良好热稳定性.晶体生长实验结果表明:合成(非提纯过的)AZC(Ⅱ)晶体可以用作制备ZnSe晶体的输运剂.     

两温区气相输运和机械振荡合成ZnGeP2多晶材料

ZnGeP2多晶的合成是其单晶生长的前提和基础,多晶材料的质量是生长高质量单晶的关键.因此,要获得高质量的ZnGeP2单晶体,必须提供高质量的ZnGeP2多晶材料.对两温区气相输运机械振荡法合成ZnGeP2多晶材料的工艺进行了研究,利用高纯(6N)P、Ge、Zn单质为原料,采用两温区气相输运和机械振荡合成出了ZnGeP2多晶材料.合成出的多晶材料经比重测试和X射线粉末衍射测试证明与标准值一致.采用改进的布里奇曼法生长出外观完整、无裂纹的φ15 mm × 25 mm单晶体,在2.5～10 μm范围内红外透过率达50;以上.     

化学气相输运法制备ZnO晶体

本文采用化学气相输运法在常压开放系统中以(0001)蓝宝石为基片制备出定向生长的ZnO晶体.以ZnO粉体为原料,NH4Cl为输运气体,O2和H2O为反应气体,加入适量的HCl作刻蚀性气体,通过调节NH4Cl输运量,获得两种不同生长方向的ZnO晶体,分别为(1010)方向和(0002)方向.(0002)方向上生长的晶体呈现六角片状,a、b轴生长速度明显高于c轴方向,晶体在基片上呈外延生长,大面积显露c面,且和蓝宝石c面平行.文中对O2、H2O、NH4Cl、HCl在晶体的生长中的作用和生长机制进行了讨论.     

Mg3N2在生成hBN反应中的催化作用

研究了Mg3N2在B4C和NH4Cl于常压高温下生成hBN反应中的作用,用红外光谱仪和X射线衍射仪对反应产物进行分析,实验结果表明,在950℃和N2气环境下,Mg3N2与B4C反应不成生成hBN,B4C与NH4Cl反应生成少量hBN,在B4C和NH4Cl中加入Mg3N2后hBN的生成量明显增加,说明高温高压下合成cBN的常用催化剂Mg3N2,在常温压高温生成hBN的反应表现催化作用。     

CuO对(Zn_(0.5)Mg_(0.5))Nb_2O_6陶瓷的烧结温度和微波介电性能的影响

本文研究了助烧剂CuO对(Zn0.5Mg0.5)Nb2O6陶瓷的烧结特性、微观结构、相结构及微波介电性能的影响。研究结果表明,助烧剂CuO可以将(Zn0.5Mg0.5)Nb2O6陶瓷的烧结温度降低到950℃。添加3 wt%CuO,在950℃烧结的(Zn0.5Mg0.5)Nb2O6陶瓷密度达到了理论密度的97%以上,介电常数为20,Q×f值为33556 GHz。     

Optical and electro-optical properties of ZnMgSe single crystals

The optical and electro-optical properties of large-sized (diameter, 20 mm; length, 70 mm) single crystals of Zn_{1 ? x}Mg_xSe (x ～ 0.5) semiconductor solid solutions are investigated. The crystals are grown by the vertical Bridgman-Stockbarger method. It is found that, for ZnMgSe single crystals with a magnesium content up to 25 at. %, the modulus of the difference between the electro-optical coefficients |r₁₃ ? r₃₃| at a wavelength of 0.63 μm is equal to (1.1 ± 0.22) × 10^?12 m/V, which is comparable in order of magnitude to the difference in the electro-optical coefficients for classical hexagonal A^IIB^VI compounds, such as CdS and CdSe. It is shown that single crystals of ZnMgSe solid solutions are promising materials for use in the fabrication of electro-optical modulators, λ/4-and λ/2-wavelength plates, and multifunctional optical elements operating in the range of high-intensity radiation of CO and CO₂ lasers.     

Microscopic investigations of morphological structures on the pyramidal faces of KDP and DKDP single crystals

Studying a number of {101} faces of KDP and DKDP single crystals in the as-grown state we found in most cases one, rarely few, clearly stepped growth hillocks covering the whole face. The geometry of these growth hillocks was determined from photomicrographs; the step heights were measured with a profilometer. To prove our results we carried out X-ray topographic investigations and in-situ observations on KDP crystals. In addition we studied the as-grown faces of ADP and LiJO₃ single crystals.     

Temperature dependences of the optical characteristics of ZnMgSe single crystals

The temperature dependences of the refractive index of wide-gap Zn_{1 − x} Mg _x Se (x ∼ 0.5) single crystals are measured. It is established that, in the temperature range 300–530 K, the value of dn/dT for such crystals grown by the vertical Bridgman method is 9.31 × 10⁻⁵ at λ = 0.63 μm and 5.29 × 10⁻⁵ at λ = 10.6 μm. The obtained values of the coefficients dn/dT for hexagonal Zn_{1 − x} Mg _x Se single crystals are close to the corresponding values for cubic ZnSe single crystals and are much lower than those for hexagonal CdS. Examples of practical application of single crystals of the ZnMgSe substitutional solid solution as a thermostable material for polarization optical elements in the IR range are given.     

水热法生长非线性光学晶体K4Gd2(CO3)3F4

采用水热法,探索了 K4Gd2(CO3)3F4晶体的析晶条件,诸如生长原料及配比、生长温度、生长周期等,并成功生长了毫米级的透明单晶.对生长的晶体进行了XRD、UV-Vis-NIR、SHG等测试,结果表明,K4Gd2( CO3)3F4晶体在380～2000 nm波段的透过率超过80;,紫外吸收截止边低于200nm;其二阶非线性光学效应约为KDP的3.5倍.     

硝酸钾铵混晶性质的研究

采用恒速冷却法首次制得了不同比例的Kx(NH4)1-xNO3(0相似文献   

Flux growth and characterizations of NdPO4 single crystals

Neodymium phosphate single crystals, NdPO₄, have been grown by a flux growth method using Li₂CO₃-2MoO₃ as a flux. The as-grown crystals were characterized by X-ray powder diffraction(XRPD), differential thermal analysis (DTA) and thermogravimetric analysis (TG) techniques. The results show that the as-grown crystals were well crystallized. The crystal was stable over the temperature range from 26 to 1200 °C in N₂. The specific heat of NdPO₄ crystal at room temperature was 0.41 J/g °C. The absorption and the fluorescence spectra of NdPO₄ crystal were also measured at room temperature.     

Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

The present paper gives a review on fundamentals, modelling, growth, structural and electrical properties of semi-insulating GaAs single crystals, grown in low temperature gradients by the Vapour Pressure Controlled Czochralski Method (VCz), with diameters from 75 up to 150 mm. Special attention is drawn to the investigation of the temperature-fields inside the growing crystals (and thus thermoelastic stress). Additionally, the influence of convective transport of heat within meit and inert gas is investigated by both experiment and modelling. Thermodynamic aspects of arsenic pressure control within the inner VCz chamber as well as the special experimental and technological challenges are discussed. High quality 100 mm (4-inch) crystals with EPD < 10⁴ cm⁻² and low as-grown residual strain are presented. Very low carbon concentrations of ≈10¹⁴ cm⁻³ were obtained for the first time in VCz crystals. This material, as one of the challengers to conventional LEC material, is able to meet similar electrical specifications whilst showing improved structural quality and better parameter homogeneity even in the as-grown state. Initial studies of a VCz crystal grown without boric oxide encapsulant is presented.     

The defect structure of CdS crystals heavy doped with Cu,Se. and Zn atoms

In this paper the defect structure of CdS crystals doped with Cu, Se and Zn atoms has been investigated. There were used two X-ray methods: the oscillating slit and oscillating film methods. CdS crystals were obtained from the melt under pressure of Se and Zn 0.5, 0.75, 1% wt and Cu 0.25, 0.5, 0.75, 1% wt in relation to CdS crystals. It was proved that high doping damages the structure of CdS crystals and that especially Cu impurity much more disturbs the crystal lattice than Zn one. Se atoms cause rather small deformation of crystal and increase the lattice constant, this being connected with decreasing of energy gap.