ZnS纳米棒阵列的结构和光学特性

采用等离子体辅助的低压金属有机化学气相沉积（LP-MOCVD）技术,在没有引入任何金属催化剂的条件下,在c平面的蓝宝石衬底上制备出高取向的ZnS纳米棒阵列。从样品的场发射扫描电镜（SEM）和透射电镜的照片（TEM）中可以看到,获得的ZnS纳米棒具有均一的直径和长度,其直径和长度约为60,400nm;X射线衍射（XRD）和选区电子衍射（SAED）谱指出获得的ZnS纳米棒为单晶的六角结构。此外,在光致发光（PL）谱中还观测到了发光峰位于335nm强的近带边发射。     

Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

The van der Waals heterojunctions,stacking of different two-dimensional materials,have opened unprecedented opportunities to explore new physics and device concepts.Here,combining the density functional theory with non-equilibrium Green’s function technique,we systematically investigate the spin-polarized transport properties of van der Waals magnetic tunnel junctions (MTJs),Cu/MnBi₂Te₄/MnBi₂Te₄/Cu and Cu/MnBi₂Te₄/hBN/n·MnBi_2...     

Magnetic alignment of MnBi crystals and magnetic properties of MnBi–Bi composites

Below Curie temperature T_C, MnBi crystals are aligned along c-axis in a Bi matrix under a fabrication field H_f of 0.5 T. Above T_C, this alignment is also accomplished by quenching under a high H_f of 10 T. Such a method has a prominent feature that MnBi crystals grow preferentially and congregate along the H_f direction. Magnetic testing shows a pronounced anisotropy in magnetization in directions normal and parallel to H_f, resulting from the alignment. In the case of the alignment below T_C, H_f increases the transition temperature of spin-reorientation and the change in magnetization.     

Aligned Electric and Magnetic Weyl Fields

The results on the non-existence of purely magnetic solutions are extended to the wider class of spacetimes which have homothetic electric and magnetic Weyl fields. This class is a particularization of the spacetimes admitting a direction for which the relative electric and magnetic Weyl fields are aligned. We give an invariant characterization of these metrics and study the properties of their Debever null vectors. The directions observing aligned electric and magnetic Weyl fields are obtained for every Petrov-Bel type.     

金属Ni纳米线阵列的制备及其磁性能

以Anopore为模板,用电化学沉积的方法制备了磁性金属镍的纳米线阵列.纳米线的直径约为200nm,长度约为50μm,长度直径比L/D达到250.此系统中相邻纳米线间存在着很强的耦合,所以易磁化方向垂直于纳米线的轴向. 关键词：     

Structural and Magnetic Properties of Codoped ZnO based Diluted Magnetic Semiconductors

Zn1-xCoxO （x = 0.01, 0.02, 0.05, 0.10 and 0.20） diluted magnetic semiconductors are prepared by the sol-gel method. The structural and magnetic properties of the samples are studied using x-ray diffraction （XRD）, extended x-ray absorption fine structure （EXAFS） and superconducting quantum interference device （SQUID）. The XRD patterns does not show any signal of precipitates that are different from wurtzite type ZnO when Co content is lower than x = 0.10. An EXAFS technique for the Co K-edge has been employed to probe the local structures around Co atoms doped in ZnO powders by fluorescence mode. The simulation results for the first shell EXAFS signals indicate that Zn sites can be substituted by Co atoms when Co content is lower than x = 0.05. The SQUID results show that the samples （x 〈 0.05） exhibit clear hysteresis loops at 300K, and magnetization versus temperature from 5 K to 350K at H = 100 Oe for the sample x = 0.02 shows that the samples have ferromagnetism above room temperature. A double-exchange mechanism is proposed to explain the ferromagnetic properties of the samples.     

Structural and Magnetic Properties of Sm Implanted GaN

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering tem- perature above room temperature in all the implanted samples, while the effective magnetic moment per Sin obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94（2005）037205, Phys. Rev. B 72（2005）245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.     

Co掺杂ZnO薄膜的结构和磁学性能

研究了用单束脉冲激光沉积法制备的Co掺杂ZnO薄膜的结构和磁学性能。XRD表征结果表明制备的薄膜是具有沿c轴择优取向的纤锌矿点阵结构。然而,进一步的高分辨电子显微镜结果显示整个样品上的晶体取向并不完全相同。很难说明形成了单晶。结果分析表明Co占据了部分Zn的格点,并对电子结构产生了影响。室温下观察到了磁滞回线,显示掺杂Co可以实现ZnO的磁性翻转,但磁性比较小。该薄膜与我们以前用双束脉冲激光沉积法制备的Co掺杂ZnO薄膜具有相似的性能,提示我们其内部的机制可能相似。     

Structural,Magnetic, and Magneto-Caloric Properties of Cu-Substituted Nd0.67Ba0.33MnO3 Manganites

Physics of the Solid State - The crystal structure and magnetic properties of polycrystalline Nd0.67Ba0.33Mn1 – xCuxO3 (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.10) manganites...     

Magnetic and Structural Properties of Electrodeposited Iron on Copper and Silver

Hyperfine Interactions - Electrodeposition of iron on copper or silver leads to the formation of bcc-iron or amorphous iron. Thermal annealing usually results in soluted iron (also γ-iron and...     

Al3+掺杂的CuZn铁氧体的结构，电学和磁学特性

采用固相合成反应技术制备纳米Cu_0.5Zn_0.5Fe_2-xAl_xO₂(x=0.0,0.1,0.2,0.3,0.4和0.5)铁氧体材料,研究Al³⁺含量对结构,电学和磁学性质的影响. 采用X射线衍射研究单相立方尖晶石结构. 利用Scherrer公式估算晶粒尺寸. 测定了温度依赖的直流电阻率.结果表明随Al³⁺含量的增加,晶格常数减小,孔隙度增加,饱和磁化强度值降低,Al³⁺对铁氧体的介电常数、介电损耗角的正切值和介质损耗因子等介电性能有明显影响,这可能与空间电荷极化有关.     

Fabrication of Ni nanodots templated by nanoporous polysulfone membrane: Structural and Magnetic properties

Two-dimensional nickel nanodots were prepared using a simple polymer based lithography process on silicon substrates. The nanoporous polysulfone membranes were fabricated using a phase inversion polymerization process. Nickel nanodots were then grown using the polysulfone membrane as a mask. The structures were written by depositing a certain thickness of nickel using electron beam evaporation. After lift off, the structural properties of the samples were studied using atomic force microscopy and grazing incidence X-ray diffractometry. The dots were found to have diameters in the range of 75–120 nm and heights of 3–5 nm. The magnetization and magnetic domain arrangement of the Ni nanodots were analyzed using vibrating sample magnetometer and magnetic force microscopy respectively. The nanodots were found to exhibit excellent soft ferromagnetic properties with a preferred easy axis of magnetization.     

脉冲激光沉积法(PLD)生长Co掺杂ZnO薄膜及其磁学性能

采用脉冲激光沉积(PLD)法在单晶Si(100)及石英衬底上生长Co掺杂ZnO薄膜,并且比较了不同生长条件下薄膜的性能。实验观察到了700℃、0.02Pa氧压气氛下生长的Co掺杂ZnO薄膜显示室温磁滞回线。采用XRD、SEM等手段对Co掺杂ZnO薄膜的晶体结构及微观形貌进行了分析,得到的ZnO薄膜具有高度的c轴择优取向,结构比较致密,表面平整度较高,并且没有发现Co的相关分相,初步表明Co有效地掺入了ZnO的晶格当中。霍尔测试表明Co掺杂ZnO薄膜样品保持了半导体的电学性能,电阻率为0.04Ω·cm左右,载流子浓度约为1018/cm3,迁移率都在18.7cm2/V·s以上。实验结果表明材料保持了ZnO半导体的性能,并具有室温铁磁性。     

Structural,Magnetic and Magnetocaloric Properties of La-deficient La0.77-xSrxCa0.2MnO2 Perovskites

La-deficient La0.77-x Ca0.2SrxMnO3 （0 〈 x 〈 0.1） polycrystalline samples are synthesized using the sol-gel technique. The crystal structures of all the samples are single orthorhombic phase with Pbnm space group. Rietveld analysis of x-ray diffraction patterns shows that the Mn-O-Mn bond angle θUn-O-Mn increases whereas the Mn-O bond length dMn--o decreases monotonically with increasing Sr^2＋ content, which results in a rich overlap between Mn 3d and O2p orbitals and leads to a systematic increase of the Curie temperature in this compound. It is found that the magnetic entropy change has a maximum at x = 0.06 in La^3＋-deficient La0.77-xCa0.2SrxMnO3. This may result from competition between the super-exchange interactions （Mn 4＋-O2--Mn4＋） and double-exchange interactions （Mn^3＋-O^2- -Mn^4＋） originating from the appearance of superfluous Mn^4＋ ions by substitution of Sr^2＋ for La^3＋ in this series. Large magnetic entropy changes of 2.32 and 1.83Jkg^-1K^-1 in the x = 0.06 and x = 0.1 samples at their Tcs of 271 K and 303K upon a low magnetic field （10kOe） make these materials promising candidates at near room temperature.     

Mn掺杂ZnS(110)表面的电子结构和磁性

采用基于密度泛函理论的第-性原理方法,研究Mn掺杂ZnS(110)表面的电子结构和磁性.计算分析不同掺杂组态的几何参数、形成能、磁矩、电子态密度以及电荷密度.结果表明:单个Mn原子掺杂,替位于表面第二层的Zn原子时体系形成能最低,说明该层是最稳定的掺杂位置.对于两个Mn原子的掺杂,当Mn与Mn之间呈反铁磁耦合时体系最稳定.体系的总磁矩和自由Mn原子的磁矩差别很小,但是Mn原子的局域磁矩却依赖于Mn原子的3d态和近邻S原子的3p态的杂化作用,即受周围S原子环境的变化影响较大.此外,分析电荷密度图得出Mn原子替换Zn原子后与S原子形成了更强的共价键.     

ZnS(111)表面掺杂Mn的电子结构和磁性的第一性原理研究

应用基于密度泛函理论的第一性原理,研究Mn原子掺杂在ZnS(111)表面的电子结构和磁性.对于单原子的掺杂组态,替位表面第一层的Zn原子时体系形成能最低,说明该层是最稳定的掺杂位置.体系总磁矩取决于Mn原子的局域环境.而对于双掺杂组态,当Mn与Mn之间呈短程铁磁耦合作用时体系最稳定.这可由Mn原子和近邻S原子的p-d杂化作用解释.此时,体系的居里温度估算值为469 K,明显高于室温,具有理论指导意义.Mn原子和受主半导体之间的相互作用是自旋极化产生的主要原因.计算结果表明,该掺杂材料可以很好的用来制作稀磁半导体,具有良好的应用前景.