Advances in photonic crystals with MEMS and with semiconductor quantum dots

We discuss photonic crystals (PCs) with a microelectromechanical system (MEMS) and semiconductor quantum dots (QDs) as novel classes of PC devices. Integration of MEMS structures into PC devices enables one to realize several kinds of functional devices, such as modulators, switches, and tunable filters for highly integrated photonic circuits. We describe the basic concept of MEMS-integrated PC devices and show numerical and experimental demonstrations of MEMS-integrated functional PC devices. On the other hand, QDs are promising candidates for active media in PC devices. Spontaneous emission control of QD emission in PC nanocavities is especially important for novel optoelectronic devices and quantum information devices. In PC nanocavities, the interaction between QD excitons and photons is enhanced dramatically. The control of spontaneous emission spectrum and the enhancement of the luminescence intensity of InAs QDs by PC nanocavities are demonstrated at telecommunication wavelengths. The Purcell effect for ensemble and single QDs in PC nanocavities are also discussed.     

Gap maps, diffraction losses, and exciton–polaritons in photonic crystal slabs

A theory of photonic crystal (PhC) slabs is described, which relies on an expansion in the basis of guided modes of an effective homogeneous waveguide and on treating the coupling to radiative modes and the resulting losses by perturbation theory. The following applications are discussed for the case of a high-index membrane: gap maps for photonic lattices in a waveguide; exciton–polariton states, when the PhC slab contains a quantum well with an excitonic resonance; propagation losses of line-defect modes in W1 waveguides, also in the presence of disorder; the quality factors of photonic nanocavities. In particular, we predict that disorder-induced losses below 0.2 dB/mm can be achieved in state-of-the-art samples by increasing the channel width of W1 waveguides.     

Simultaneous near field imaging of electric and magnetic field in photonic crystal nanocavities

The insertion of a metal-coated tip on the surface of a photonic crystal microcavity is used for simultaneous near field imaging of electric and magnetic fields in photonic crystal nanocavities, via the radiative emission of embedded semiconductor quantum dots (QD). The photoluminescence intensity map directly gives the electric field distribution, to which the electric dipole of the QD is coupled. The magnetic field generates, via Faraday's law, a circular current in the apex of the metallized probe that can be schematized as a ring. The resulting magnetic perturbation of the photonic modes induces a blue shift, which can be used to map the magnetic field, within a single near-field scan.     

Polarization properties of dipolelike defect modes in photonic crystal nanocavities

Far-field measurements of the in-plane polarization properties of spontaneous emission from optical nanocavities formed in two-dimensional photonic crystal slab waveguides are presented. A strong polarization signature, even subthreshold, is found for a pair of highly localized dipolelike resonant modes. This polarization signature is used to study the effects of symmetry lowering within the cavity.     

Experimental realization of highly efficient broadband coupling of single quantum dots to a photonic crystal waveguide

We present time-resolved spontaneous emission measurements of single quantum dots embedded in photonic crystal waveguides. Quantum dots that couple to a photonic crystal waveguide are found to decay up to 27 times faster than uncoupled quantum dots. From these measurements beta-factors of up to 0.89 are derived, and an unprecedented large bandwidth of 20 nm is demonstrated. This shows the promising potential of photonic crystal waveguides for efficient single-photon sources. The scaled frequency range over which the enhancement is observed is in excellent agreement with recent theoretical proposals taking into account that the light-matter coupling is strongly enhanced due to the significant slow-down of light in the photonic crystal waveguides.     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002     

Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells

Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related to radiative electron transitions between resonant and localized impurity states, as well as to the transitions with participation of subband states. The temperature dependence of the equilibrium intraband absorption of terahertz radiation and its modulation in a longitudinal electric field in GaAs/AlGaAs quantum wells has been investigated.     

On‐chip single photon sources using planar photonic crystals and single quantum dots

We review the basic light‐matter interactions and optical properties of chip‐based single photon sources, that are enabled by integrating single quantum dots with planar photonic crystals. A theoretical framework is presented that allows one to connect to a wide range of quantum light propagation effects in a physically intuitive and straightforward way. We focus on the important mechanisms of enhanced spontaneous emission, and efficient photon extraction, using all‐integrated photonic crystal components including waveguides, cavities, quantum dots and output couplers. The limitations, challenges, and exciting prospects of developing on‐chip quantum light sources using integrated photonic crystal structures are discussed.     

二维GaAs 基光子晶体微腔的制作与光谱特性分析

研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137 nm,谱线半高宽度约为1 nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的.     

Design,fabrication and optical characterization of GaAs photonic crystal nanocavity lasers with InAs quantum dots gain wafer-bonded onto Si substrates

We designed and fabricated III–V compound semiconductor two-dimensional photonic crystal (PhC) thin film slabs with quantum dots (QDs) inside formed on Si substrates for highly integrated silicon photonic circuits with built-in nanolasers. Defect-shifted L3 type PhC nanocavities formed in GaAs thin films embedding 1.3 μm-emitting InAs QDs layer-transferred onto Si substrates were investigated. Quality factors <1000 for the PhC nanocavities on SiO₂ were enhanced up to ∼8000 by removing SiO₂ to form air-bridge structures, resulting in room temperature, continuous wave lasing.     

Size-dependent radiative emission of PbS quantum dots embedded in Nafion membrane

PbS quantum dots (QDs) have been incorporated in a Nafion membrane, where the QD sizes were adjusted by changing the reaction time due to the steady growing process. The radiative emissions of the samples were investigated by optical absorption, photoluminescence (PL), and time-resolved PL spectroscopy. Size-tunable emissions are shown by the PL spectrum in a range of 1.84–1.65 eV, and the emission mechanism was investigated based on a four-band envelope-function model. Possible energy transitions for the radiative emission are listed. The PL lifetime depending on the particle size is about one microsecond, and PL decay curves exhibit a trend of decreasing decay time with an increase of the PbS QD size.     

Photonic engineering of surface‐emitting terahertz quantum cascade lasers

Various resonators for surface emission are reviewed that have recently been developed to improve radiative‐ and collection‐efficiencies of terahertz quantum cascade lasers (THz QCL). While the fabrication of waveguides for long wavelengths is challenging in terms of molecular beam epitaxy, long wavelengths also provide a wonderful testbed for new photonics structure concepts, since these can be easily produced by conventional optical lithography because of the typically large size of the required features. This led to novel geometries, like one‐ and two‐dimensional non‐periodic photonic crystals, or circular gratings for microdisk‐ and ring‐lasers, which are all implemented by simply patterning the top metal cladding of a metal‐metal waveguide. The modeling of such resonators with the finite element method is also described, highlighting the importance of this tool for the engineering of surface losses and far‐field patterns.     

Influence of interference effects of spontaneous emission on the behavior and spectra of resonance fluorescence of a three-level atom in a strong wave field

An investigation is made of the influence of quantum interference processes accompanying radiative relaxation of excited states on the population dynamics, total intensity, and spectra of the resonance fluorescence of three-level V-type atoms. Analytic expressions are obtained for the total intensity and spectra of the resonance fluorescence taking into account the off-diagonal nature of the radiative relaxation operator. It is shown that quantum interference process can substantially alter the total spontaneous emission intensity of the atoms and the population dynamics of the atomic levels, as well as the resonance fluorescence spectra.     

Quantum regime for dielectric Cherenkov radiation and graphene surface plasmons

In this article, we propose a quantum regime for Cherenkov free-electron laser (CFEL) and surface plasmon polaritons (SPPs) excited in dielectric and multilayer graphene waveguides, respectively. This quantum regime is realized when the momentum spread induced in the interaction is smaller than the photon recoil. The discrete momentum exchange characterizing this interaction yields a significantly narrow single emission line. To determine the condition of the quantum regime, we derive an expression for the gain in the Cherenkov effect using a quantum mechanical treatment. It is assumed that the effective spread in momentum is due to the finite interaction length L (or the propagation length in the case of SPPs). For both cases, CFEL and SPPs, the effects of electron beam and waveguide parameters on the possibility of the quantum regime are studied. We conclude that the quantum regime can be basically verified at low electron beam energy (<40 keV) and at emission wavelengths in the near infrared range (<5 μm) when L is in the order of millimeters. In the case of SPPs, we also show that the feasibility to realize quantum SPPs is enhanced by increasing the chemical potential and number of graphene layers.     

Enhanced single photon emission in silicon carbide with Bull's eye cavities

The authors demonstrate a Bull's eye cavity design that is composed of circular Bragg gratings and micropillar optical cavity in 4H silicon carbide (4H-SiC) for single photon emission. Numerical calculations are used to investigate and optimize the emission rate and directionality of emission. Thanks to the optical mode resonances and Bragg reflections, the radiative decay rates of a dipole embedded in the cavity center is enhanced by 12.8 times as compared to that from a bulk 4H-SiC. In particular, a convergent angular distribution of the emission in far field is simultaneously achieved, which remarkably boost the collection efficiency. The findings of this work provide an alternative architecture to manipulate light—matter interactions for achieving high-efficient SiC single photon sources towards applications in quantum information technologies.     

Strongly modified spontaneous emission rates in diamond-structured photonic crystals

The spontaneous emission decay dynamics of nanocrystal quantum dots embedded into biotemplated titania photonic crystals with a diamond-based lattice are investigated. Modification of the decay rate of quantum dot emission over wide frequency bandwidths in the visible by the photonic crystals is observed. Frequency-dependent analysis reveals both inhibition and enhancement of emission with a radiative lifetime variation by more than a factor of 10.     

Competition between Quantum Interference and Stimulated Electronic Raman Scattering Processes via Hybrid Excitation in a Na_2-Na System

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Competition between Quantum Interference and Stimulated Electronic Raman Scattering Processes via Hybrid Excitation in a Na2-Na System

An experimental observation of the competition between quantum interference and stimulated electronic Raman scattering (SERS) via equal-frequency hybrid excitation and collision-aided radiative excitation in a Na2-Na system is reported for the first time.It is found that the SERS for 3P1/2,3/2-4P are suppressed and the optically pumped stimulated emission (OPSE) for 5S-4P are enhanced dramatically at a particular excitation wavelength where constructive quantum interference between two transitions 3P1/2-5S and 3P3/2-5S in atomic sodium takes place.A theoretical analysis based on the dressed-atom approach is carried out to explain the experimental results.     

Effect of emitter number on quantum cascade laser monolithic phased array

We present the optical analysis of spatial single-mode monolithic quantum cascade laser arrays in the mid-IR. Subwavelength parallel microstripe waveguides are buried into InP:Fe and phase locked by evanescent coupling. Lasing at room temperature is obtained at λ=8.4 μm. We describe the near- and far-field of stripe arrays comprising up to 32 emitters. One hundred percent coherent emission is shown experimentally and well accounted for by a standard optical simulation.     

Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates

We fabricated InAs quantum dots (QDs) with a GaAsSb strain-reducing layer (SRL) on a GaAs(0 0 1) substrate. The wavelength of emission from InAs QD is shown to be controllable by changing the composition and thickness of the SRL. An increase in photoluminescence intensity with increasing compositions of Sb and thickness of the GaAsSb SRL is also seen. The efficiency of radiative recombination was improved under both conditions because the InAs/GaAsSb/GaAs hetero-interface band structure more effectively suppressed carrier escape from the InAs QDs.