Possibilities of the formation of carbides and borides by ion implantation

In the system of boron and carbon, the formation of boron carbide was investigated after ion implantation of 25 keV B ions into carbon or of 25 keV C ions into boron and subsequent annealing. TEM and electron diffraction studies showed that the crystallization of boron carbide begins only at temperatures above 1050°C. By implantation of 20 keV C ions into iron (ion dose 10¹⁷ C ions/cm²) only the metastable ε-Fe₂O will be generated, which at above 220°C transforms into the stable cementite Fe₃C. After implantation of 20 keV B ions into iron, no formation of iron boride could be found. These experimental facts can be understood qualitatively with the help of the thermal-spike model. The energy density or the temperature in the thermal spikes is not sufficient for the generation of cementite iron boride or boron carbide.     

Azobenzene-functionalized alkanethiols in self-assembled monolayers on gold

Self-assembled monolayers (SAMs) of 4-trifluoromethyl-azobenzene-4′-methyleneoxy-alkanethiols (CF₃– C₆H₄–N=N–C₆H₄–O–(CH₂) _n –SH on (111)-oriented poly-crystalline gold films on mica were examined by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The spectra are analyzed with the help of density-functional-theory calculations of the isolated molecule. Only one doublet is detected in the sulphur 2p spectra of the investigated SAMs, consistent with a thiolate bond of the molecule to the gold surface. The C 1s XP spectra and the corresponding XAS π ^* resonance exhibit a rich structure which is assigned to the carbon atoms in the different chemical surroundings. Comparing XPS binding energies of the azobenzene moiety and calculated initial-state shifts reveals comparable screening of all C 1s core holes. While the carbon 1s XPS binding energy lies below the π ^*-resonance excitation-energy, the reversed order is found comparing core ionization and neutral core excitation of the nitrogen 1s core-hole of the azo group. This surprising difference in core-hole binding energies is interpreted as site-dependent polarization screening and charge transfer among the densely packed aromatic moieties. We propose that a quenching of the optical excitation within the molecular layer is thus one major reason for the low trans to cis photo-isomerization rate of azobenzene in aromatic-aliphatic SAMs.     

Optical properties of nanodiamond layers

Thin ultradisperse diamond (UDD) layers deposited from a water suspension are studied by optical and x-ray photoelectron spectroscopy (XPS). The effective band gap determined by the 10⁴-cm^?1 criterion for ozone-cleaned UDD is 3.5 eV. The broad structureless photoluminescence band (380–520 nm) is associated with radiative recombination through a system of continuously distributed energy levels in the band gap of diamond nanoclusters. The optical absorption of the material at 250–1000 nm originates from absorption on the disordered nanocluster surface containing threefold-coordinated carbon. The surface of UDD clusters subjected to acid cleaning contains nitrogen-oxygen complexes adsorbed in the form of NO ₃ ^? nitrate ions. Annealing in a hydrogen atmosphere results in desorption of the nitrate ions from the cluster surface. The evolution of the oxygen (O1s) and nitrogen (N1s) lines in the XPS spectra under annealing of a UDD layer is studied comprehensively.     

Amorphization of armco iron by boron implantation and subsequent crystallization by heat treatment: A CEMS,X-ray and ultramicrohardness study

The phase compositon of the near-surface zone of armco iron implanted with B⁺ ions (100 keV) at 200 °C was analyzed by CEMS and X-ray diffraction. The existing phases (bcc iron, Fe₂B and an amorphous Fe-B phase) were subsequently modified by heat treatment at various temperatures. The influence of the phase modifications upon the mechanical properties was studied by ultramicohardness measurements.     

Structural and optical studies of the discontinuous behaviour of Te thin films subjected to He implantation

Electron microscopy investigations of tellurium thin films implanted with singly ionized He ions have revealed the appearance of a large number of surface structures when N _s, the number of implanted ions per unit area within the films, exceeds 0.2×10¹⁵ ions/cm² at a beam energy of 32 keV. This coincides with an observed discontinuity in the optical properties of the Te thin films and with a sudden decrease in the degree of orientation of the thin films as measured by X-ray diffraction. The same type of behaviour is observed for implantations with variable ion-beam energies and a fixed N _s of 0.5×10¹⁵ He ions/cm², with a discontinuity apparent near a value of 30 keV.     

Nitrogen implanted in iron: AES and Pes study

AES and PES studies of nitrogen in iron implanted with molecular nitrogen ions having an energy of 120 keV and doses on the order of 10¹⁷ N-atoms/cm² were performed. Measuring nitrogen concentration depth profiles, a remarkable accumulation of nitrogen near surface was found besides the ordinary concentration maximum at the depth of mean projected range R_p of nitrogen ions. In addition to strong nitride bonding state a weakly bonded nitrogen was also observed. It manifested itself by time-dependent changes in spectra and by a distinct value of N 1s binding energy. The reasons for the concept of weakly bonded nitrogen, probably of molecular form, are discussed.     

Ce(Ⅳ)和Ce(Ⅲ)化合物系列的X射线光电子能谱研究

用XPS研究了标称四价铈盐系列:硫酸铈铵、硫酸铈、二苯基羟乙酸铈、碘酸铈、过氧化铈、二氧化铈以及三价铈盐系列:草酸亚铈、硫酸亚铈、二苯基羟乙酸亚铈、碘酸亚铈和氯化亚铈.结果表明,上述标称四价铈盐都属于混合价化合物,其Ce3d电子能谱呈现Ce⁴⁺和Ce³⁺的二组谱线结构的混合.在真空中加热后CeO₂的Ols电子能谱有两个氧峰,这说明 Ce(4f⁰)O(2p^π)←→Ce(4f¹)O(2p^n-1) 类型价态波动的可能性较大.三价铈盐的3d谱线的低结合能端约3.5—4eV处则存在摔落伴峰.     

Species formed at cuprite fracture surfaces; observation of O 1s surface core level shift

Surfaces of mineral cuprite prepared by fracture under UHV have been characterised by synchrotron XPS and near-edge X-ray absorption spectroscopy before and after exposure to ambient air. Before exposure of the cuprite, the Cu 2p photoelectron and Cu L_2,3-edge absorption spectra were consistent with Cu^I with very little d⁹ character. Surface-enhanced O 1s spectra from the unexposed mineral revealed a surface species, with binding energy 0.95 ± 0.05 eV below the principal cuprous oxide peak, assigned to under-coordinated oxygen. A second surface species, with binding energy about 1 eV higher than the principal peak, was assigned to either hydroxyl derived from chemisorbed water vapour or surface oxygen dimers produced by restructuring of the cuprite fracture surface. The width of the principal O 1s peak was 0.66 ± 0.02 eV. The observed Cu L₃- and O K-edge absorption spectra were in good agreement with those simulated for the cuprite structure. After exposure of the fracture surface to ambient air, the low binding energy O 1s surface species was barely discernible, the original high binding energy O 1s surface species remained of comparable intensity, new intensity appeared at an even higher (∼1.9 eV) binding energy, and the Cu L_2,3-edge spectrum indicated the presence of Cu^II, consistent with the formation of a thin surface layer of Cu(OH)₂.     

Composition depth profiles of Bi3.15Nd0.85Ti3O12 thin films studied by X-ray photoelectron spectroscopy

In the present work, X-ray photoelectron spectroscopy (XPS) was used to investigate the composition depth profiles of Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) ferroelectric thin film, which was prepared on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by chemical solution deposition (CSD). It is shown that there are three distinct regions formed in BNT film, which are surface layer, bulk film and interface layer. The surface of film is found to consist of one outermost Bi-rich region. High resolution spectra of the O 1s peak in the surface can be decomposed into two components of metallic oxide oxygen and surface adsorbed oxygen. The distribution of component elements is nearly uniform within the bulk film. In the bulk film, high resolution XPS spectra of O 1s, Bi 4f, Nd 3d, Ti 2p are in agreement with the element chemical states of the BNT system. The interfacial layer is formed through the interdiffusion between the BNT film and Pt electrode. In addition, the Ar⁺-ion sputtering changes lots of Bi³⁺ ions into Bi⁰ due to weak Bi-O bond and high etching energy.     

Rapid nickel diffusion in cold-worked carbon steel at 320–450 °C

The diffusion coefficient of nickel in cold-worked carbon steel was determined with the diffusion couple method in the temperature range between 320 and 450 °C. Diffusion couple was prepared by electro-less nickel plating on the surface of a 20% cold-worked carbon steel. The growth in width of the interdiffusion zone was proportional to the square root of diffusion time to 12,000 h. The diffusion coefficient (D_Ni) of nickel in cold-worked carbon steel was determined by extrapolating the concentration-dependent interdiffusion coefficient to 0% of nickel. The temperature dependence of D_Ni is expressed by D_Ni = (4.5 + 5.7/?2.5) × 10^?11 exp (?146 ± 4 kJ mol^?1/RT) m²s^?1. The value of D_Ni at 320 °C is four orders of magnitude higher than the lattice diffusion coefficient of nickel in iron. The activation energy 146 kJ mol^?1 is 54% of the activation energy 270.4 kJ mol^?1 for lattice diffusion of nickel in the ferromagnetic state iron.     

An investigation by angular resolved X-ray photoelectron spectroscopy of strong metal-support interaction (SMSI) in the Pt/TiO2 system

Angular resolved XPS measurements were performed on platinum particles deposited on the TiO₂ (100) surface. High temperature reduction at 733 K in hydrogen at atmospheric pressure caused the appearance of lower binding energy states in the titanium 2p region. These states corresponded to the formation of Ti²⁺ and Ti³⁺ ions on the surface. From the angular dependencies of the relative intensities of the Ti 2p and Pt 4f peaks, it appeared that the reduced Ti species were located in the outermost surface region, on the surface of the Pt particles.     

Electron-stimulated desorption of negative O? ions from the oxidized O/Ru surface

This paper reports on a study of the electron-stimulated desorption of negative oxygen ions from the O/Ru surface, which represents an additional factor responsible for the destruction of the protective oxide layer of the mirrors used in ultraviolet lithography. The cross section of degradation of the O/Ru layer due to the electron-stimulated desorption of the O⁺ and O⁻ ions and the O atoms has been found to be 1.6 × 10⁻¹⁹ cm². A comparison of the dependences of the electron-stimulated desorption yield of O⁺ and O⁻ ions on the incident electron energy E with the ionization cross section of the adsorbate core level σ _O2s (E) has revealed that the ionization of the O 2s level is the main channel of the electron-stimulated desorption of O⁻ ions.     

Iron nanoparticles in amorphous SiO<Subscript>2</Subscript>: X-ray emission and absorption spectra

The local structure of the chemical bond of iron ions implanted into SiO₂ glasses (implantation energy, 100 keV; fluence, 1 × 10¹⁶ cm^?2) is investigated using x-ray emission and absorption spectroscopy. The Fe L x-ray emission and absorption spectra are analyzed by comparing them with the corresponding spectra of reference samples. It is established that iron nanoparticles implanted into the SiO₂ vitreous matrix are in an oxidized state. The assumption is made that the most probable mechanism of transformation of iron nanoparticles into an oxidized state during implantation involves the breaking of Si-O-Si bonds with the formation of Si-Si and Fe-O bonds.     

The near surface changes in boron implanted 4145 steel

Boron implanted 4145 steel was evaluated for changes in the near-surface region property such as microhardness. The surfaces when implanted with ¹¹B⁺ ions at 135 keV energy to a dose 1 × 10¹⁷ ions cm^?2 resulted in increase of microhardness for 10 to 40 gms of applied load. An increase upto 40% in microhardness could be observed in the specimen when annealed at 310δC for 3 hours. Furthermore, the effect of ion-beam induced intermixing of 250Å thin carbon film due to boron implantation was also studied for different doses ranging from 1 × 10¹⁷ to 3 × 10¹⁷ boron ions cm^?2. An increase in microhardness with applied load was observed for 1 × 10¹⁷ ions cm^?2 concentration, while hardest layer was formed at 3 × 10¹⁷ ions cm^?2 dose which practically had very little effect to 10 and 20 gms of load.     

Influence of temperature and photon energy on quantum yield of photoemission from real iron surfaces

The influence of temperature and incident photon energy on the photoemission quantum yield, Y _s, of real iron surfaces has been investigated by thermally assisted photoemission (TAPE). Measurements were carried out using a Geiger counter under a gaseous atmosphere of He containing 1 % isobutane vapor at normal atmospheric pressure in the temperature range 25–353 °C under UV irradiation with wavelengths of 200, 210, 220, and 230 nm. The Y _s obtained under irradiation at a given wavelength was found to increase with temperature, particularly more rapidly with wavelengths of greater photon energy. From the Arrhenius plots, the Y _s values were found to have activation energies of 0.112–0.040 eV, depending on the photon energy. The chemical composition of the surfaces after TAPE measurements at different temperatures was examined by X-ray photoelectron spectroscopy (XPS). The intensity of species thermally removed from the surface was also measured by temperature desorption spectroscopy (TDS). XPS and TDS results showed the removal of the surface water and weakly bound carbon material from the surface with temperature. It was concluded that the removal of these species with increasing temperature enabled the incident light to penetrate through the surface into the metal, causing the increase in the Y _s. The dependence of the activation energies on the photon energy was explained by the change of UV light absorption spectra of the surface water, and the enhancement of the Y _s with temperature was also attributed to the influence of iron cations (Fe³⁺) corresponding to positive holes produced in the surface oxide layer by UV light.     

Sputtering characteristics of fullerene C60 films under bombardment with 0.1–1-keV argon ions and atoms

The sputtering of fullerene C₆₀ films under bombardment with Ar⁺ ions was studied. In thin films, blistering effects related to diffusion of the implanted argon ions along the layer and substrate interface have been found to occur. A threshold behavior was observed for sputtering at ion energies around 0.2 keV, which is much higher than in graphites. It has been shown that dependence of the work function on ion energy can be described in the framework of Zigmund-Falcone’s approximation, which takes into account anisotropic effects in cascade collisions, and with Yudin’s approximation for the sputtering of elemental materials. The obtained surface binding energy for fullerenes is U _s?6.7 eV, which is less than the value for graphites, U _{s graph}=7.7 eV.     

Room temperature magnetization measurements of some substituted rare earth iron garnets

The saturation magnetization (M _s) and the initial magnetic susceptibility (χ _in) of substituted yttrium iron garnet (YIG) Ho_3−x Y _x Fe₅O₁₂ where (x=0,0.3,1.5), pure terbium iron garnet Tb₃Fe₅O₁₂, and substituted aluminum iron garnet (AlIG) Ho₃Fe_5−x Al _x O₁₂ where (x=0.05,0.7) at room temperature are reported. It has been observed that M _s and χ _in decrease in a linear manner as Ho³⁺ replaces Y³⁺ in yttrium iron garnet. For substituted (AlIG), a drastic decrease in both M _s and χ _in as Al³⁺ ions replace Fe³⁺ ions. The rate of decrease of M _s and χ _in with the increase of Al³⁺ for substituted (AlIG) is greater than that for substituted (YIG). That is attributed to the decrease in the superexchange interaction (self and mutual iron interactions) with Al substitution.     

Investigation of silicon doped by zinc ions with a large dose

The formation of nanoparticles in СZn-Si(100) implanted with ⁶⁴Zn⁺ ions using a dose of 5 × 10¹⁶ cm^–2 and an energy of 50 keV at room temperature with subsequent thermal processing in oxygen at temperatures ranging from 400 to 900°C is studied. The surface topology is investigated with scanning electron (in the secondary emission mode) and atomic force microscopes. The structure and composition of the near-surface silicon layer are examined using a high-resolution transmission electronic microscope fitted with a device for energy dispersive microanalysis. An amorphized near-surface Si layer up to 130 nm thick forms when zinc is implanted. Amorphous zinc nanoparticles with an average size of 4 nm are observed in this layer. A damaged silicon layer 50 nm thick also forms due to radiation defects. The metallic zinc phase is found in the sample after low-temperature annealing in the range of 400–600°C. When the annealing temperature is raised to 700°C, zinc oxide ZnO phase can form in the near-surface layer. The complex ZnO · Zn₂SiO₄ phase presumably emerges at temperatures of 800°C or higher, and zinc-containing nanoparticles with lateral sizes of 20–50 nm form on the sample’s surface.     

乙醚团簇的激光电离质谱及从头计算

应用激光多光子电离质谱与超声脉冲分子束技术研究了乙醚团簇，实验中观测到乙醚的碎片离子以及强度较小的(E)H⁺，(E)^＋₂和(E)₂H⁺(E代表CH₃CH₂OCH₂CH₃)，没有发现更大尺寸的团簇离子.结合从头计算理论，在B3LYP/6-311++G(d,p 关键词： 乙醚团簇 偶极-偶极相互作用 从头计算     

Isotopic mass effects for low-energy channeling in a silicon crystal

Monte Carlo (MC) simulations have been used to study the low-energy channeling of ¹⁰B and ¹¹B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Ψ_C ≈ 15.3(keV/E)^1/2 (in degrees) for the channeling of isotopic ¹⁰B ions and Ψ_C=14.5(keV/E)^1/2 (in degrees) for the channeling of isotopic ¹¹B ions, where E is the incident energy. This means that (Ψ_{C for 10B ions}/Ψ_{C for 11B ions})≈ (15.3/14.5)≈ (11/10)^1/2.