Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG

The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.     

Laser induced modification of surface structures

The results on surface modification of materials of different structures; morphology, grain sizes, density and porosity by exposure to nanosecond laser light are given. Laser induced changes in their surface characteristics are presented. Surface layers of Si₃N₄, SiC dense ceramics and BN graphite and turbostratic pressed powders are studied by scanning electron microscopy to reveal the new nanostructures (nanowires or nanotubes) and new morphologies. A pronounced evolution in structure and grain size of BN graphite powders was demonstrated in laser processing layers.     

Exciton related photoluminescence stimulation in SiC nanocrystals

The paper presents the results of porous SiC characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence spectroscopy techniques. XRD study shows the investigated porous 6H-SiC layers contain inclusions of 4H-SiC and 15R-SiC polytypes as well as the amorphous graphite phase. Photoluminescence study of PSiC layers with different thicknesses and SiC NC sizes reveals the intensity stimulation for exciton and defect-related PL bands. The intensity stimulation of defect-related PL bands is due to the increase, at the etching process, of the concentration of surface defects, apparently to deal with carbon. The intensity enhancement for exciton-related PL bands is attributed to the exciton recombination rate increasing due to the realization of exciton confinement and exciton–polariton effects in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).     

SIMP钢中H对He热解吸行为的影响研究

为了初步理解核用结构材料中H对He行为的影响,以He离子单独辐照和He和H离子连续辐照作为对比,利用热释放谱(TDS)、透射电子显微镜(TEM)和扫描电子显微镜(SEM)研究了SIMP中H对He的热解吸和滞留行为的影响。TDS结果表明:He释放的主峰主要出现在1 198~1 222 K之间,对应于气泡的迁移释放机制。相对于He单独辐照,H的附加辐照使得He的释放峰向低温移动,且释放量增大。即H促进了He的热解吸。另外,H对He热解吸的促进作用与H的辐照剂量有关。当H注入的峰值浓度(原子分数)从5%增加到50%时,这种促进作用有所减弱。结合TEM和SEM结果发现:H的存在促进了TDS加热过程中材料表面的起泡行为,从而加速了He以气泡迁移机制释放的过程。     

Fabrication of composite structure of carbon fibers and high density SiC nanowires

Composite structure of carbon fibers and SiC nanowires was fabricated by a simple chemical vapor deposition process, using commercial silicon dioxide and graphite powders as raw materials. The analysis of scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction indicates that the synthesized SiC nanowires distribute uniformly with high density in the used carbon fiber preform, which are perpendicular to and around each carbon fiber in a radial array. The SiC nanowires located at the interface of advanced composites is very favorable to the interfacial bonding between composites matrix and carbon fibers, thereby increasing the strength of composites greatly.     

Fabrication of composite structure of carbon fibers and high density SiC nanowires

Composite structure of carbon fibers and SiC nanowires was fabricated by a simple chemical vapor deposition process, using commercial silicon dioxide and graphite powders as raw materials. The analysis of scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction indicates that the synthesized SiC nanowires distribute uniformly with high density in the used carbon fiber preform, which are perpendicular to and around each carbon fiber in a radial array. The SiC nanowires located at the interface of advanced composites is very favorable to the interfacial bonding between composites matrix and carbon fibers, thereby increasing the strength of composites greatly.     

X-ray micro-computed tomography of beech wood and biomorphic C,SiC and Al/SiC composites

The microstructures of beech wood and of beech wood-derived carbon, silicon carbide (SiC), and an aluminum/SiC composite were studied using both scanning electron microscopy (SEM) and synchrotron X-ray micro-computed tomography (µCT). As opposed to traditional two-dimensional imaging techniques, the µCT data allowed nondestructive evaluation of relatively large sample volumes. Nondestructive three-dimensional data analysis led to the observation of microstructural features, such as varying pore-wall topographies not previously seen in SEM, calculations of the volume fraction of porosity and characterization of the interconnectivity of porosity in the SiC material.     

激光熔覆Al+SiC涂层对镁合金表面耐磨性能的改性

通过脉冲激光器(Nd-YAG)在AZ91D镁合金基底上熔覆Al+SiC粉体。采用扫描电子显微镜、能量色散谱(EDS)和X-射线衍射测定分析熔覆层的显微组织、化学成分和物相组成。研究表明:Al+SiC涂层主要由SiC,β-Mg_(17)Al_(12)及Mg和Al相组成,激光熔覆层与镁合金基底表现出良好的冶金结合。所有样品都具有树枝状结构,且随着SiC质量分数的增大,树枝状和胞状结构的间隔变得更大。熔覆涂层的表面硬度高于基底,并且随着熔覆层中的SiC质量分数的增加而增大,SiC质量分数为40%的熔覆层具有最大的显微硬度,达到180 HV,然而质量分数为10%的熔覆层硬度为136 HV。销盘滑动磨损试验表明,复合涂层中的SiC颗粒和原位合成的Mg_(17)Al_(12)相显著提高了AZ91D镁合金的耐磨损性,其中,SiC质量分数从10%增加到30%过程中磨损体积损失逐渐减少,SiC质量分数在20%~30%时熔覆层具有最好的耐磨性。     

Synthesis of carbon nanotubes by ECR plasma-assisted chemical vapor deposition

Carbon nanotubes have been grown using an electron cyclotron resonance (ECR) plasma source at a substrate temperature of 500 °C. Methane has been used as the source gas. A network of carbon nanotubes has been observed in scanning electron microscopy. Transmission electron microscopy revealed that the structure consists of straight, Y-junction and ring-like nanotubes. Further, electron diffraction of the nanotubes confirms a graphite crystal structure. PACS 81.16.He; 68.37.Lp; 68.37.Hk; 85.35.Kt; 75.75.+a     

On the problem of reactor graphite lifetime

Fine-grained dense graphites of different manufacturers were tested and studied for the purpose of predicting their lifetimes at high (∼2000°C) temperatures. The tests consisted in sample heating by electric current to a destruction temperature. The study included a set of electron microscopy, X-ray diffraction, and electrical methods. X-ray diffraction data for initial samples were compared with data for domestic MPG graphite. Scanning electron microscopy was applied to both initial and heated samples. The lifetime prediction was based on the Zhurkov classical formula. It was shown that CGD, Carbone Lorraine, and MPG graphite composites can differ appreciably in both structural characteristics and high-temperature lifetimes.     

Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Si 2p and C 1s core level spectra recorded at different electron emission angles from SiO₂/SiC samples using a photon energy of 3.0 keV show two components. These are identified as originating from SiO₂ and SiC for Si 2p while for C 1s they are identified to originate from graphite like carbon and SiC. The relative intensity of these components are extracted and compared to calculated intensity variations assuming different models for the elemental distribution in the surface region. For both samples investigated best agreement between experimental and calculated intensity variations with emission angle is obtained when assuming a graphite like layer on top of the oxide layer. Contribution from carbon at the SiC/SiO₂ interface could not be identified.     

STUDY ON THE CATHODE DEPOSIT PRODUCED IN THE PROCESS OF CARBON ARC DISCHARGE

The cathode deposit produced by carbon are discharge wae studied by scanning electron microscopy, high resolution electroa microscopy, X-ray diffraction and Raman spectroscopy. The results indicate that the stacking of hexagonal carbon layer in the discharged graphite is different from the ABAB stacking sequence in graphite, and that carboy nanotube is a kind of graphite-like micro-crystal with a low-dimensional structure.     

Structural evaluation of polysilane-derived products: from amorphous to thermodynamically stable phases

A polysilane with a C-to-Si ratio of 6.0 was pyrolysed to produce an amorphous matrix (source powder), which was heated further to obtain different products. These polysilane-derived samples were studied using X-ray diffraction, Raman spectroscopy, solid-state magic-angle-spinning nuclear magnetic resonance and transmission electron microscopy. The source powder is a hydrogenated matrix composed of free carbon, random SiC₄ sites and trace SiCO species. Pyrolysis of the source powder leads to the nucleation and growth of SiC and progressive organization of free carbon. SiC forms at 1100°C and fast growth appears at 1700°C accompanied by obvious weight loss. SiC decomposition also occurs at high temperatures, which leads to the formation of relatively well-organized carbon. The structural evolution is discussed and compared with the literature.     

Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies

A SiC/SiC composite is characterized by X-ray diffraction, atomic force microscopy and various positron spectroscopies (slow positron implantation, positron lifetime and re-emission). It is found that besides its main constituent 3C-SiC the composite still must contain some graphite. In order to better interpret the experimental findings of the composite, a pyrolytic graphite sample was also investigated by slow positron implantation and positron lifetime spectroscopies. In addition, theoretical calculations of positron properties of graphite are presented.     

Growth Kinetics of Silicon Carbide Film Prepared by HeatingPolystyrene/Si(111)

在不同的温度下热处理用sol-gel法制的PS/Si(111)叠层凝胶膜制备出了SiC薄膜．用XRD、SEM、XPS、FTIR等分析方法研究了SiC薄膜的结构、组成和表面形貌等．根据FTIR光谱计算了不同温度下得到的SiC薄膜的厚度,并研究了PS/Si(111)热解法生长SiC薄膜的生长动力学．结果表明,随着生长温度的增加,SiC薄膜生长速率变化趋势为：1200～1250 oC生长速率增加缓慢是2D生长机制,1250～1270 oC生长速率快速增加是3D生长机制,1270～1300 oC生长速率为负增长是由于SiC薄膜生长与Si和C原子的挥发共同作用所致．由速率变化求得各段表观生长激活能分别是122.5、522.5、-127.5 J/mol．     

Electrical discharge machining of titanium alloy (Ti-6Al-4V)

In this study, the electrical discharge machining (EDM) of titanium alloy (Ti-6Al-4V) with different electrode materials namely, graphite, electrolytic copper and aluminium and process parameters such as, pulse current and pulse duration were performed to explore the influence of EDM parameters on various aspects of the surface integrity of Ti6Al4V. Scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive spectrograph (EDS) and hardness analysis were performed. The experimental results reveal that the value of material removal rate, surface roughness, electrode wear and average white layer thickness are tendency of increase with increasing current density and pulse duration. However, extremely long-pulse durations such as 200 μs led to decrease MRR and surface roughness. Furthermore, the surface hardness is increasing due to the Ti₂₄C₁₅ carbides formed on the surface and obvious cracks are always evident in re-solidified layer when machining copper electrode. The surface crack densities and critical crack lines were determined for the tested material. The graphite electrode is beneficial on material removal rate, electrode wear and surface crack density but relatively poorer surface finish.     

不同LET 12C6+离子对生防菌BJ1的辐射诱变效应

选取高低两个LET点(40和60keV/m),剂量点分别为50,100,200,400,600Gy进行辐照处理,研究了生防菌的存活率与突变率的关系,抑菌谱以及活性等。结果表明,在高LET条件下,低剂量辐照就可以得到较多的突变体,并且BJ1有较高的存活率和突变谱,有利于筛选优良的正突变体。因此高LET较低LET有更为明显的辐射诱变效应。     

Material Studies in a High Energy Spark Gap

The chemical interactions and physical processes occurring in a high energy spark gap with different combinations of gases, electrodes, and insulators were studied. The electrodes studied were graphite and a tungsten-copper composite; the insulators were Lexan and Blue Nylon; and the gases were N2 and SF6. The gas composition was monitored with a mass spectrometer. Spectroscopic techniques were used to observe the arc channel. The electrode surfaces were studied with several surface analysis techniques, including scanning electron microscopy, electron spectroscopy for chemical analysis, Auger electron spectroscopy, and X-ray fluorescence. The breakdown voltage distribution was examined for different material combinations. The plasma chemistry processes involving the gas, electrode, and insulator materials were found to affect the voltage self-breakdown distribution. The detailed surface analysis gave information about the nature of the chemical processes. The presence of Blue Nylon seemed to have a more adverse effect than Lexan and graphite seemed to have a narrower voltage distribution than the tungsten-copper composite.     

Effect of different Ge predeposition amounts on SiC grown on Si (1 1 1)

The SiC films were grown by solid source molecular beam epitaxy (SSMBE) on Si (1 1 1) with different amounts of Ge predeposited on Si prior to the epitaxial growth of SiC. The samples were investigated with reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). The results indicate that there is an optimized Ge predeposition amount of 0.2 nm. The optimized Ge predeposition suppress the Si outdiffusion and reduce the formation of voids. For the sample without Ge predeposition, the Si outdiffusion can be observed in RHEED and the results of XRD show the worse quality of SiC film. For the sample with excess amount of Ge predeposition, the excess Ge can increase the roughness of the surface which induces the poor quality of the SiC film.