Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Angular dependences of critical current density in YBCO thin films with crossed columnar defects

We investigated the dependences of the critical current density J_c on the magnetic field angle θ in YBa₂Cu₃O_7−δ thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J_c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current–voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.     

Pinning mechanism in carbon nanotube doping of MgB2 superconductor

MgB_1.9C_0.1 samples are synthesized under the ambient pressure (AP) and high pressure (HP), respectively. The further studies demonstrate different field-dependence of the critical current density J_c(H) in each sample. In the view of two-gap superconductivity in these samples, δT_c pinning (resulting from the spatial fluctuations of the transition temperature) is dominant in the AP sample, while in the HP sample, both δT_c and δl pinning (due to the mean-free-path fluctuations) act together and their contributions vary with temperature. Besides the improvement of H_c2(0), due to the different pinning mechanism, J_c(H) of the HP sample shows a slower decay with the increasing fields than that of the AP sample in high fields, which suggests a possible method of retarding the rapid decay of J_c(H) under elevated fields.     

The effective activation energy Ueff(T,B,J) in Hg-1223 single phase superconductors

We review the methods of calculating the effective activation energy U_eff(T,B,J) for both transport measurements and magnetic decay, together with some theoretical models. Then, we apply these methods to our Hg-1223 single-phase superconductor to obtain the activation energy. Transport results give that the magnetic field and temperature dependence of the U_eff can be well described as U₀B^−α(1−T/T_c)^m. Magnetic relaxation shows that the current density dependence of U(J) can be scaled onto a single curve, which can be considered as the activation energy at some temperature T₀. The pinning mechanism in the measured temperature range does not change, and the activation energy depends separately on the three variables: T, B, and J, are responsible for the magnetic decay data scaling onto a single curve at various temperatures. As temperatures close to zero and near T_c, thermally assisted flux motion model is no longer valid since other processes dominate.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.     

Critical current density and flux pinning in an unconventional superconductor

The functional dependence of the critical current density on magnetic field, Jc(H), observed at fixed temperatures in the unconventional type-II superconductor, LaAg1−cMnc (c=0.1,0.2,0.3) alloys, but not the relative magnitude of Jc in different alloy compositions at any given temperature and field, is adequately described by the exponential-decay critical state model. In accordance with the predictions of the Kramer's flux-pinning model, the peak value of the pinning force density with the exponent 1.7?m?2.8 and scales with h=H/Hc₂, where Hc₂ is the upper critical field. Irrespective of sample composition and temperature in the superconducting state, the pinning of the flux line lattice (FLL) dominates over the plastic FLL shear.     

Pinning,thermally activated depinning and their importance for tuning the nanoprecipitate size and density in high Jc YBa2Cu3O7−x films

YBa₂Cu₃O_7?x (Y123) films with quantitatively controlled artificial nanoprecipitate pinning centers were grown by pulsed laser deposition (PLD) and characterized by transport over wide temperature (T) and magnetic field (H) ranges and by transmission electron microscopy (TEM). The critical current density J_c was found to be determined by the interplay of strong vortex pinning and thermally activated depinning (TAD), which together produced a non-monotonic dependence of J_c on c-axis pin spacing d_c. At low T and H, J_c increased with decreasing d_c, reaching the very high J_c ～ 48 MA/cm² ～20% of the depairing current density J_d at 10 K, self-field and d_c ～ 10 nm, but at higher T and H when TAD effects become significant, J_c was optimized at larger d_c because longer vortex segments confined between nanoprecipitates are less prone to thermal fluctuations. We conclude that precipitates should extend at least several coherence lengths along vortices in order to produce irreversibility fields H_irr(77 K) greater than 7 T and maximum bulk pinning forces F_p,max(77 K) greater than 7–8 GN/m³ (values appropriate for H parallel to the c-axis). Our results show that there is no universal pin array that optimizes J_c at all T and H.     

Effects of nanoscale defects on critical current density of (Y1−xEux)Ba2Cu3O7−δ thin films

In pulsed laser deposition of YBa₂Cu₃O_7?δ films, defect introduction into the films tends to anisotropically improve the pinning along the H||c direction due to the columnar growth mode of the process. In Eu-substituted samples, however, even though an increase in critical current density (J_c) in the H||c direction was observed for low fields (H = 0.2 T), the improvement was more notable for the H||ab-plane at both low and higher fields. Herein we present detailed TEM microstructural studies to understand these new trends in J_c(H), which are markedly different than flux pinning increases achieved with other methods, for example, with nanoparticle additions. Threading dislocations, observed in the Eu-substituted samples along the c-axis, account for J_c enhancement with H||c at low field. The enhanced ab-planar pinning in the Eu-substituted samples is attributed to the extensive bending of the {0 0 1} lattice planes throughout the film, and the crystal lattice defects with excess Cu–O planes, that were effective in increasing the J_c for H||ab at both low and high fields.     

Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device

Two-stacked submicron Josephson junctions devices were fabricated in a-axis oriented YBaCu₃O₇ and PrBa₂Cu₃O₇ (Y123/Pr123) multi layered thin films using focused ion beam milling technique. The transition temperature and critical current density (J_c) of the device are about 83 K and 5 × 10⁵ A/cm² at 20 K, respectively. The device was irradiated with external microwave of 10 GHz and studied at 20 K. The microwave induced voltage steps are observed in I–V characteristics. The supercurrent branch become resistive above a certain microwave power and also the J_c was suppressed as we increased the microwave power. Magnetic field modulation of critical current shows periodicity of about 2000 gauss correspond to the Josephson junctions in the stack.     

Flux pinning in columnar-structured and single crystalline MgB2 films

We have investigated the flux pinning effect of columnar grain boundary in columnar-structured and single crystalline MgB₂ films. The MgB₂ films with columnar structure showed much higher J_c than that of single crystalline thin film, and sample having smaller grain size had a higher J_c in high magnetic fields. At 5 K, the MgB₂ film with grain size of 460 nm showed an abnormal double-peak behavior in pining force density, F_p(B), caused by competition of different types of pinning sites, such as planar defects and point defects. Field dependences of F_p in columnar-structured films suggest that the columnar grain boundary is a strong pinning source in the MgB₂ film and it plays a crucial role in enhancing J_c over a wide range of magnetic fields and temperatures.     

Enhanced flux pinning in pulsed laser deposited Y Ba2Cu3O7−δ : BaTiO3 nanocomposite thin films

The effect of incorporation of BaTiO₃(BTO) nanoparticles on the flux pinning properties of pulsed laser deposited YBCO:BTO thin films was studied. Substantial increase in the critical current density (J_C) and the pinning force density (F_p) of the nanocomposite thin films was observed. At 77 K, and zero applied magnetic field, the value of J_C for YBCO and YBCO:BTO (2%) thin films were 2.93 MA/cm² and 6.43 MA/cm², respectively. At the same temperature and an applied magnetic field of 4 T, the value of J_C increases from 3.6×10⁴ A/cm² for YBCO thin film to 2.7×10⁵ A/cm² for YBCO:BTO (2%) nanocomposite thin film. The study of temperature and field dependence of of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in the improvement of flux pinning properties.     

Relationship between crystallization process and superconducting properties of YBCO films by TFA–MOD method using starting solution with various compositions

We have investigated the influence of partial pressure of water vapor [P(H₂O)] in the crystallization process on the superconducting properties of YBa₂Cu₃O_7−y (YBCO) films fabricated by a trifluoroacetate–metal organic deposition (TFA–MOD) method. The starting solution with different compositions of Y: Ba:Cu = 1.0:2.0:3.0 and 1.0:1.5:2.0 were studied. The critical current density (J_c) values of YBCO films fabricated from Y:Ba:Cu = 1.0:2.0:3.0 starting solution significantly increase (1.71 → 2.55 MA/cm²) with increasing P(H₂O) from 12.3 to 47.4 kPa. In the YBCO films fabricated from Y:Ba:Cu = 1.0:1.5:2.0 starting solution, high J_c values of over 2.5 MA/cm² were recognized in a wide range of P(H₂O) (12.3–47.4 kPa). One of the reason for J_c improvement is the suppression of coarsening of the secondary phases grains such as Y₂Cu₂O₅ and CuO due to increase in growth rate of YBCO layer in the crystallization process. The J_c values of all YBCO films decreased as P(H₂O) increased up to 70.1 kPa. This degradation of J_c values may be caused by difference of crystal growth mechanism in high growth rate.     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

We report the formation of columnar defects in Co-doped BaFe₂As₂ single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J_c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J_c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe₂As₂ and cuprate superconductors.     

Enhanced superconducting properties of Eu2O3-doped MgB2

Bulk polycrystalline samples of Eu₂O₃-doped MgB₂ have been synthesized by a standard solid state reaction route and their structural and superconducting properties have been investigated. As a function of Eu₂O₃ content we have found a significant increase in the critical current density (J_c) and the irreversibility field (H_irr) in the magnetic field range 0–6 T. The XRD results reveal the presence of MgO and EuB₆ secondary phases along with the main hexagonal phase of MgB₂. The strain values and the lattice distortions have been found to increase almost linearly with the nominal Eu₂O₃ content. The observed significant improvement in J_c(H) and H_irr in the Eu₂O₃-doped MgB₂ samples, thus is mainly attributed to the lattice distortions introduced by Eu₂O₃ doping.     

Raman spectroscopy of RuSr2(Eu1.5Ce0.5)Cu2O10 magneto-superconductor

Raman spectroscopy studies are reported for the RuSr₂Eu_1.5Ce_0.5Cu₂O₁₀ (Ru-1222) compound at various temperatures of 300, 250, 200 and 90 K. Three distinct vibrational bands: the first at 110, 140, and 160 cm⁻¹, the second at 295 and 347 cm⁻¹, and third one at 651 cm⁻¹ are seen in Raman spectra of the compound at room temperature. These bands are attached to the Cu atoms’ c-direction, the Ru atoms’ ab-plane stretching and Ru atoms’ c-direction anti-stretching modes. Below 200 K, an extra vibrational mode is also seen at 260 cm⁻¹. Also, with a decrease in temperature, though the Cu vibrational modes remain intact, the Ru atoms’ ab-plane stretching (295 cm⁻¹) and c-direction anti-stretching (651 cm⁻¹) modes shift gradually to higher wave number positions. The frequencies of modes at 260 and 651 cm⁻¹ showed anomalous softening and line-width broadening below 100 K that corroborates well with the spin ordering seen in susceptibility studies. The studied compound is a ferromagnetic superconductor with magnetic ordering of the Ru spins at 200 K and superconductivity below 30 K. A magnetic and electrical transport characterization of the compound is also presented briefly.     

Reversible magnetization and irreversibility line of tri-layer superconductor Ba2Ca2Cu3O6(O,F)2 with Tc∼108 K

We report magnetization measurements of grain-aligned Ba₂Ca₂Cu₃O₆(O,F)₂ with T_c?108 K. The interlayer distance of the material is the shortest among known tri-layer superconductors. Unexpectedly, the magnetization data show that the coupling strength between CuO₂ layers is rather weak. A direct reflection of the weak coupling is highly suppressed irreversibility line, i.e. a broad reversible region in H-T plane. The decoupling field obtained from the irreversibility line is less than 0.1 T, which is comparable with that of quasi two-dimensional superconductor Bi₂Sr₂CaCu₂O_8+δ. Comparison of data with the Hao-Clem model gives characteristic parameters [ξ_ab(0) and λ_ab(0)] and the critical fields [H_c(0) and H_c2^c(0)]. A large value of penetration depth, λ_ab(0)=240 nm reflects a small carrier concentration in CuO₂ planes, and explains the reason of the weak interlayer coupling.     

A new method for estimating the critical current density of a superconductor from its hysteresis loop

The critical current density J_c of some of the superconducting samples, calculated on the basis of the Bean’s model, shows negative curvature for low magnetic field with a downward bending near H = 0. To avoid this problem Kim’s expression of the critical current density, J_c = k/(H₀ + H), where J_c has positive curvature for all H, has been employed by connecting the positive constants k and H₀ with the features of the hysteresis loop of a superconductor. A relation between the full penetration field H_p and the magnetic field H_min, at which the magnetization is minimum, is obtained from the Kim’s theory. Taking the value of J_c at H = H_p according to the actual loop width, as in the Bean’s theory, and at H = 0 according to an enhanced loop width due to the local internal field, values of k and H₀ are obtained in terms of the magnetization values M⁺(?H_min), M^?(H_min), M⁺(H_p) and M^?(H_p). The resulting method of estimating J_c from the hysteresis loop turns out to be as simple as the Bean’s method.     

Observation of record flux pinning in melt-textured NEG-123 superconductor doped by Nb, Mo, and Ti nanoparticles

Flux pinning in melt-processed (Nd_0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_y “NEG-123” + 35 mol% Gd₂BaCuO₅ “NEG-211” (70 nm in size) composite doped by TiO₃, MoO₃ and Nb₂O₅ achieved record values. The optimum values of all three dopands were found to be around 0.1 mol%. Transmission electron microscope (TEM) analysis found clouds of <10 nm sized particles in the NEG-123 matrix, shifting the pinning particle size distribution to significantly lower values. TEM by energy dispersive X-ray spectroscopy (EDX) analysis clarified that these nanoparticles contained a significant amount of Nb, Mo, and Ti. Appearance of nanometer-sized defects correlated with a significantly improved flux pining at low and medium magnetic fields, which was particularly significant at high temperatures. In the Nb-doped sample, a record J_c value of 925 kA/cm² at the secondary peak field (4.5 T) was achieved at 65 K, 640 kA/cm² at zero field at 77 K, and 100 kA/cm² at 90.2 K, the last value having been up to now considered as a good standard for REBa₂Cu₃O_y “RE-123” materials at 77 K. The greatly improved J_c–B performance in Nb/Mo/Ti doped samples can be easily translated to large-scale LRE-123 (LRE = light rare earths, Nd, Eu, Gd, Sm) blocks intended for real superconducting super-magnets applications.