Fabrication and analysis of ZnO thin film bulk acoustic resonators

This study employs RF magnetron sputter technique to deposit high C-axis preferred orientation ZnO thin film on silicon substrate, which is then used as the piezoelectric thin film for a thin film bulk acoustic resonator (FBAR). Electrical properties of the FBAR component were investigated by sputtering a ZnO thin film on various bottom electrode materials, as well as varying sputter power, sputter pressure, substrate temperature, argon and oxygen flow rate ratio, so that structural parameters of each layer were changed. The experimental results show that when sputter power is 200 W, sputter pressure is 10 mTorr, substrate temperature is 300 °C, and argon to oxygen ratio is 4:6, the ZnO thin film has high C-axis preferred orientation. The FBAR component made in this experiment show that different bottom electrode materials have great impact on components. In the experiment, the Pt bottom electrode resonant frequency was clearly lower than the Mo bottom electrode resonant frequency, because Pt has higher mass density and lower acoustic wave rate. The component resonant frequency will decrease as ZnO thin film thickness increases; when top electrode thickness is higher, its resonant frequency also drops, due to top electrode mass loading effect and increased acoustic wave path. Therefore, ZnO thin film and top/bottom electrode thickness can be fine-tuned according to the required resonant frequency.     

A new model for film bulk acoustic wave resonators

Based on cavity resonance and sandwich composite plate （3D） theoretical model for frequency dispersion characterization theory, this paper presents a universal three-dimensional and displacement profile shapes of the film bulk acoustic resonator （FBARs）. This model provides results of FBAR excited thickness-extensional and flexure modes, and the result of frequency dispersion is proposed in which the thicknesses and impedance of the electrodes and the piezoelectric material are taken into consideration; its further simplification shows good agreement with the modified Butterworth-Van-Dyke （MBVD） model. The displacement profile reflects the vibration stress distribution of electrode shapes and the lateral resonance effect, which depends on the axis ratio of the electrode shapes a/b. The results are consistent with the 3D finite element method modeling and laser interferometry measurement in general.     

Tunable bulk acoustic wave resonators with the induced piezoelectric effect in a ferroelectric

An electromechanical model of the piezoelectric effect induced in an acoustic resonator based on a ferroelectric film under the action of a dc or weak ac voltage is developed. The basic equation is obtained by expansion of the free energy in a series with respect to the electric induction and the mechanical deformation. The system of electromechanical equations for variable components of the induction and the mechanical deformation involves all linear terms along with the component of the electrostriction nonlinear with respect to the mechanical deformation. These electromechanical equations made it possible to obtain a one-dimensional approximation for the effective parameters of the material: the piezoelectric modulus and the elastic modulus as a function of the strength of the electric field applied to the acoustic layer. Expressions for the controlled electromechanical coupling coefficient and resonance frequencies of the tunable acoustic resonator are found. It is shown that the most significant parameter responsible for the tuning is the nonlinear electros-triction coefficient M, whose magnitude and sign were evaluated from the available experimental data.     

Effects of electrodes on performance figures of thin film bulk acoustic resonators

The effects of mechanical losses and elastic properties of the electrodes on the performance figures of a thin film bulk acoustic resonator (FBAR) are analyzed by numerical simulation. Results indicate that the material loss of the electrode has no visible effect on the characterization of the effective electromechanical coupling factor, k(eff)2. The acoustic impedance ratio of the electrode to the piezo-film dominantly determines the behaviors of the k(eff)2 variation with the electrode thickness. The resonance Q value, Q(s), of the FBAR closely relies on the material Q values of film and of electrodes as expected. Besides, the variation of Q(s) versus the thickness of the electrodes crucially depends on the acoustic impedance ratio as well. Especially, three characteristic parameters, i.e., the maximum value of k(eff)2, the sectional mass ratio of the electrode to the piezo film corresponding to the maximum k(eff)2, and the tolerance range of the ratio to keep k(eff)2 near the maximum, are calculated for some typical samples. These results would be useful for optimizing FBAR designs and performances.     

薄膜体声波谐振器的伽马辐照敏感机理分析

实验证明薄膜体声波谐振器(FBAR)用于检测伽马辐照是可行的,但未对敏感机理进行深入研究。针对这一问题,根据两种不同的FBAR结构,提出了不同机理来解释FBAR在伽马辐照下谐振频率偏移的原因。其中结构一FBAR为四层叠层结构（金属层-压电层-氧化层-金属层）,伽马辐照之后,会在辐照敏感层(氧化层)形成一个电压,相当于给压电层施加了一个直流电压,从而使谐振频率发生偏移;结构二与结构一不同的是,结构二FBAR在氧化层和压电层之间有一半导体层,辐照之后在氧化层中形成的电压改变了半导体的表面势,使半导体空间电荷层电容发生改变,从而改变谐振频率。通过仿真得到两种不同机理的结果,并与相关文献的测试结果对比,发现频率偏移的趋势和频率偏移量的数量级是相同的,因此提出来的两种机理是可行的。     

薄膜体声波谐振器的伽马辐照敏感机理分析

实验证明薄膜体声波谐振器(FBAR)用于检测伽马辐照是可行的,但未对敏感机理进行深入研究。针对这一问题,根据两种不同的FBAR结构,提出了不同机理来解释FBAR在伽马辐照下谐振频率偏移的原因。其中结构一FBAR为四层叠层结构（金属层-压电层-氧化层-金属层）,伽马辐照之后,会在辐照敏感层(氧化层)形成一个电压,相当于给压电层施加了一个直流电压,从而使谐振频率发生偏移;结构二与结构一不同的是,结构二FBAR在氧化层和压电层之间有一半导体层,辐照之后在氧化层中形成的电压改变了半导体的表面势,使半导体空间电荷层电容发生改变,从而改变谐振频率。通过仿真得到两种不同机理的结果,并与相关文献的测试结果对比,发现频率偏移的趋势和频率偏移量的数量级是相同的,因此提出来的两种机理是可行的。     

基于ZnO薄膜的高次谐波体声波谐振器的研究

基于ZnO作压电层和蓝宝石作基底的高次谐波体声波谐振器(HBAR),采用不同电极材料和溅射方法进行优化。优化选定镀铬-金/氧化锌/铬-金/蓝宝石结构。对制备的器件进行了测试分析,结果显示,具有多模谐振特性的HBAR器件在2.87GHz Q值达到43000。根据一维Mason等效电路模型,HBAR器件还进行了理论仿真,结果表明理论结果与实测值基本一致。     

The effect on the annealing temperature of Li doped ZnO thin film for a film bulk acoustic resonator

We investigated the material and electrical properties of Li doped ZnO thin film (ZLO) with variation of the annealing temperature. In the 500 C sample, ZLO film showed well defined (002) c-axis orientation and a full width half-maximum property of 0.25. The electrical properties of ZLO thin films showed the excellent specific resistance of 1.5×10¹¹ Ω cm. Finally, the frequency characteristics of the ZLO thin film FBAR, according to the annealing temperature, showed improvement of the return loss from 24.48 to 30.02 dB at a resonant frequency of 1.17 GHz.     

X-ray topography analysis of bulk acoustic wave resonators

X-ray topography is first used to totally examine the fundamental modes of acoustic oscillations in the bulk-acoustic-wave (BAW) resonator on the base of an AT-cut quartz crystal at the first and third harmonics. As is evident from the experiments, the anharmonic longitudinal oscillations of the resonator can be visualized, just as the fundamental transverse acoustic oscillations can be. The amplitude-frequency response (AFR) is related to the frequency dependence of diffracted x-ray intensity.     

Orientation fluctuation trend of Pt and ZnO layers in film bulk acoustic resonator

ZnO-based film bulk acoustic resonator (FBAR) was fabricated with many ZnO/Pt layers by magnetron sputtering. All the layers are good crystallized and highly textured. By crystallographic test, the orientation fluctuation of Pt layer increases with increasing film thickness or stack layers, whereas that of ZnO layer decreases slightly. It is consistent with ZnO grain c-axis tilting observed using transmission electron microscopy. Due to these good quality layers, the device has a high resonate frequency of 3.94 GHz.     

Deposition and characterization of sputtered ZnO films

Zinc oxide thin films were deposited by radio frequency magnetron sputtering at room temperature using a metallic zinc target in a gas mixture of argon and oxygen. Plasma power, oxygen /argon gas ratio, gas pressure, and substrate temperature were varied, and an experimental design method was used to optimize these deposition parameters by considering their interdependence. Crystalline structures and film stresses were examined. Post-deposition rapid thermal annealing was also carried out to observe its effects on the film properties. Statistical analysis was then used to find the optimal sputtering conditions. Results indicated that plasma power and gas pressure have the largest effects on film crystallization and stress and that postdeposition annealing can be used to improve the quality of the film properties.     

Heat treatment of bias sputtered ZnO films

The effect of a post-deposition heat treatment on the electrical and optical properties of RF sputtered ZnO films has been investigated in detail. The resistivity can be varied by several orders of magnitude and optimum values are obtained for films heated at ≈ 420°C for 5– 10 minutes in a hydrogen atmosphere. This treatment is also required in order to stabilize the as-sputtered films against Oxygen chemisorption. An optical transmission, larger than 80%, and a sharp absorption edge, (equivalent to an energy gap of 3.3 eV) independent of sample condition, were observed in all cases.     

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

ZnO film is attractive for high frequency surface acoustic wave device application when it is coupled with diamond. In order to get good performance and reduce insertion loss of the device, it demands the ZnO film possessing high electrical resistivity and piezoelectric coefficient d₃₃. Doping ZnO film with some elements may be a desirable method. In this paper, the ZnO films undoped and doped with Cu, Ni, Co and Fe, respectively (doping concentration is 2.0 at.%) are prepared by magnetron sputtering. The effect of different dopants on the microstructure, piezoelectric coefficient d₃₃, and electrical resistivity of the film are investigated. The results indicate that Cu dopant can enhance the c-axis orientation and piezoelectric coefficient d₃₃, the Cu and Ni dopant can increase electrical resistivity of the ZnO film up to 10⁹ Ω cm. It is promising to fabricate the ZnO films doped with Cu for SAW device applications.     

两步法制备超疏水性ZnO纳米棒薄膜

采用两步法制备了超疏水性ZnO纳米棒薄膜,在用磁控溅射在普通玻璃衬底上生长一层ZnO籽晶层基础上,利用液相法制备了空间取向高度一致的ZnO纳米棒阵列,经修饰后由亲水性转变为超疏水性.用扫描电子显微镜观察了纳米棒的表面结构,用接触角测量仪测出水滴在ZnO纳米棒薄膜表面的接触角为151°±05°,滚动角为7°.用Cassie模型对ZnO纳米棒薄膜的超疏水性进行了验证. 关键词： ZnO纳米棒 超疏水 两步法     

硅微ZnO压电薄膜传声器的研制

本文介绍了一种利用ZnO压电薄膜为换能器的硅微压电薄膜传声器的制备,并且对微机械加工工艺过程进行了较为详细的描述。本文对传声器的部分结构进行改进,与通常设计相比较大幅提高了传声器的性能,1000Hz基准频率的灵敏度达到-85dB(相对于1V/Pa),500Hz到10000Hz的频率响应的平坦度在±3dB范围内。     

ZnO薄膜硅微压电矢量水听器

提出了一种基于ZnO压电薄膜的硅微压电矢量水听器,其核心部件是利用微电子机械系统(MEMS)技术制作的悬臂梁结构压电加速度计。由近似解析和有限元分析,得出加速度计的灵敏度和谐振频率,并在此基础上对其进行了优化设计。研制了MEMS压电加速度计,并装配后构成MEMS矢量水听器。测试结果表明:加速度灵敏度在20~1,200 Hz范围内约为0.83 mV/(m/s²)。经过液柱法测量,在1 kHz时,MEMS矢量水听器等效声压灵敏度为-229.5 dB (ref.1V/μPa),比同类型压阻式MEMS矢量水听器的灵敏度高17 dB以上。     

Electrode effects on general modes in high-overtone bulk acoustic resonators

Generally, in theoretical calculations of high-overtone bulk acoustic resonators (HBAR), metal electrode effects were always ignored. However, the acoustical impedance, thickness and loss of the electrodes affect practically the performances of HBAR operating at high-frequency. For very high-frequency cases, the thickness of the metal electrode is always on the same order of that of the piezo-film and the electrode effects on modes cannot be negligible. In this paper, based on the resonance frequency spectra and Butterworth Van Dyke equivalent circuit of HBAR, the effects of the material, loss, and thickness of the electrodes on the figure of merit, effective electromechanical coupling factor, quality factor, etc. are analyzed. It is demonstrated that the performance of HBAR can also be optimized by using the electrodes with proper impedance, loss and thickness.     

Structural, electrical and piezoelectric properties of LiNbO3 thin films for surface acoustic wave resonators applications

In this work, 0.30 μm thick LiNbO₃ layers have been deposited by sputtering on nanocrystalline diamond/Si and platinised Si substrates. The films were then analyzed in terms of their structural and optical properties. Crystalline orientations along the (0 1 2), (1 0 4) and (1 1 0) axes have been detected after thermal treatment at 500 °C in air. The films were near-stoichiometric and did not reveal strong losses or diffusion in lithium during deposition or after thermal annealing. Pronounced decrease of the roughness on top of the LiNbO₃ layer and at the interface between LiNbO₃ and diamond was also observed after annealing, compared to the bare nanocrystalline diamond on Si substrate. Furthermore, ellipsometry analysis showed a better density and a reduced thickness of the surface layer after post-deposition annealing. The dielectric constant and losses have been measured to 50 and less than 3.5%, respectively, for metal/insulator/metal structures with 0.30 μm thick LiNbO₃ layer. The piezoelectric coefficient d₃₃ was found to be 7.1 pm/V. Finally, we succeeded in switching local domain under various positive and negative voltages.     

薄膜体声波谐振器的力敏特性研究

薄膜体声波谐振器(FBAR)力传感器作为一种新型的谐振式传感器,力敏特性是其设计原理。以FBAR微加速度计为例研究了工作在纵波模式,采用具有纤锌矿结构的AlN作为压电薄膜的FBAR,施加应力载荷后,其弹性常数改变导致FBAR谐振频率偏移的力敏特性。首先,采用有限元(FEA)静力学仿真,得到惯性力载荷作用下集成在硅微悬臂梁上的压电薄膜的应力分布;选取最大应力值作为载荷,基于第一性原理计算纤锌矿AlN的弹性系数与应力的关系式,预测惯性力载荷作用下AlN弹性系数的最大变化量。其次,采用谐响应分析,对比空载和不同惯性力载荷作用下FBAR微加速度计的谐振频率和偏移特性,预测FBAR微加速度计的加速度-谐振频率偏移特性。最后仿真分析得到：惯性力载荷作用下,FBAR微加速度计的谐振频率向高频偏移,灵敏度约为数kHz/g;其加速度增量-谐振频率偏移特性曲线具有良好的线性度。     

薄膜体声波谐振器的力敏特性研究

薄膜体声波谐振器(FBAR)力传感器作为一种新型的谐振式传感器,力敏特性是其设计原理。以FBAR微加速度计为例研究了工作在纵波模式,采用具有纤锌矿结构的AlN作为压电薄膜的FBAR,施加应力载荷后,其弹性常数改变导致FBAR谐振频率偏移的力敏特性。首先,采用有限元(FEA)静力学仿真,得到惯性力载荷作用下集成在硅微悬臂梁上的压电薄膜的应力分布;选取最大应力值作为载荷,基于第一性原理计算纤锌矿AlN的弹性系数与应力的关系式,预测惯性力载荷作用下AlN弹性系数的最大变化量。其次,采用谐响应分析,对比空载和不同惯性力载荷作用下FBAR微加速度计的谐振频率和偏移特性,预测FBAR微加速度计的加速度-谐振频率偏移特性。最后仿真分析得到:惯性力载荷作用下,FBAR微加速度计的谐振频率向高频偏移,灵敏度约为数kHz/g;其加速度增量-谐振频率偏移特性曲线具有良好的线性度。