Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field

A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field is investigated theoretically.The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method.The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies.It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm.     

Electronic structures of GaAs/AlGaAs concentric double rings in applied electric and magnetic field

The electronic structures of GaAs/Al_0.35Ga_0.65As concentric double rings are calculated based on the effective mass envelope function theory, with and without the applied electric and magnetic field along the growth direction. The Hamiltonian matrix elements are determined through the Fourier transform method. As the heterostructure evolves from a single ring to the concentric double rings, our simulation is performed on the bound state energies of the electron and the hole. The results show that the energy levels undulate with the evolution of the ring. The applied magnetic field increases the ground state energies both of the electron and of the hole, as well as the transition energy between the first conduction subband and valence subband. However, the electric field decreases the electronic energies linearly.     

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

The influence of lateral electric field on one-electron states and intraband absorption in two-dimensional concentric double quantum rings is investigated. The confining potential of the rings is modeled as a double harmonic central potential. Using the exact diagonalization technique, we calculate the dependence of the electron energy spectrum as a function of the electric field strength as well as the inner ring radius. Also, different values of confinement strength are considered. Selection rule is obtained for intraband transitions, caused by the direction of incident light polarization. The intraband absorption coefficient is calculated for different values of electric field strength, inner ring radius, confinement strength and incident light polarization direction. The combined influence of electric field strength and change of confining strength show that while the increment of the first one leads only to blueshift of absorption spectrum, the augment of the second one makes the redshift. In addition, both blueshift and redshift of the spectrum have been obtained with the enlargement of inner ring radius. Finally, we show that the absorption spectrum undergoes redshift by changing the polarization of incident light from x- to y-axis.     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.     

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.     

Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity

A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The single electron energy spectrum has been found using the effective mass approximation and an exact diagonalization technique. The electron ground state's probability density has been examined for different values of the confinement energies and depth of dot confinement relative to the bottom of the quantum ring and barrier thickness. The energy level's dependence on the electric field strength has been studied considering the effects of mentioned parameters of the structure and hydrogenic donor impurity.     

The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications. The text was submitted by the authors in English.     

Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings

This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schr?dinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.     

Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots

In this paper, the electronic structure of an asymmetric self-assembled vertically coupled quantum dots heterostructure has been investigated. The structure consists of two ellipsoidal quantum dot (QDs) caps made with InAs embedded in a wetting layer InAs and surrounded by GaAs. Using the strain dependent k·p theory, the energy of the two lowest states of a single electron/hole which is confined within the coupled QD structure has been calculated. As a result, it can be estimated the energy gap for different geometry parameters and for tuning the external magnetic field. The numerical results show that the energy gap is very sensitive to the size asymmetry of the structure and to the small separation distance of the dots but less sensitive to the existence of an external magnetic field and large interdot distance.     

Indirect excitons and double electron-hole layers in a wide single GaAs/AlGaAs quantum well in a strong electric field

The recombination spectra of indirect excitons and double electron-hole layers in a wide single quantum well in an electric field are studied. It is found that electrons and holes in the wide well become spatially separated in a sufficiently strong electric field. This leads to a substantial reorganization of the radiative recombination spectrum and to a significant increase in the carrier lifetime. It is shown that the total charge of the electron-hole system can be changed by varying the photoexcitation frequency and the applied electric field, thus passing from the neutral case of indirect excitons to the case of charged double electron-hole layers. The concentration of excess carriers in the well is measured as a function of the electric field strength. The behavior of the excited states of indirect heavy-hole and light-hole excitions is studied for a neutral excitonic system in a strong electric field. It is shown that the electric-field dependences allow the excited states of indirect excitons with a light hole to be distinguished from the excited states with a heavy hole.     

Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

We perform experimental and theoretical studies of the electronic structure and relaxation processes in pyramid shaped InAs/GaAs quantum dots (QDs), grown by molecular beam epitaxy in the Stranski-Krastanow growth mode. Structural properties are characterized with plan view and cross section transmission electron microscopy.Finite difference calculations of the strain and the 3D Schrödinger equation, taking into account piezoelectric and excitonic effects, agree with experimental results on transition energies of ground and excited states, revealed in luminescence and absorption spectra. We find as relative standard deviation of the size fluctuation ξ=0.04; the pyramid shape fluctuates between {101} and {203} side facets.Carrier capture into the QD ground state after carrier excitation above barrier is a very efficient process. No luminescence from excited states is observed at low excitation density. Energy relaxation processes in the zero-dimensional energy states are found to be dominated by phonon energy selection rules. However, multi-phonon emission (involving GaAs barrier, InAs wetting layer, InAs QD and interface modes) allows for a large variety of relaxation channels and thus a phonon bottleneck effect does not exist here.     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导. 关键词： 球形量子点 解析方法 平面波展开方法 有效质量     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律，并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外，用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算，并对计算结果做了比较，发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.     

Electronic structure of double Ge quantum dots in Si

Theoretical investigations of the electronic structure of elastically stressed double Ge quantum dots in Si performed in the six-band kp approximation with the Bir-Pikus Hamiltonian and with the configuration interaction method are reviewed. The existence of the antibonding ground state of holes has been revealed. It has been found that, when quantum dots approach each other, the exchange energy of two-particle states has a minimum at the point of the intersection of bonding and antibonding levels; the singlet and triplet states at this point are degenerate. For the lowest spin singlet, it has been revealed that Coulomb correlations in the motion of two holes are manifested in the localization of the two-particle wavefunction at opposite quantum dots when the distance between the dots increases. It has been shown that the degree of entanglement of the singlet quantum states reaches 50% in the case of the manifestation of such spatial correlations.     

Intense laser effects on the optical properties of asymmetric GaAs double quantum dots under applied electric field

We investigated the combined effects of a non-resonant intense laser field and a static electric field on the electronic structure and the nonlinear optical properties (absorption, optical rectification) of a GaAs asymmetric double quantum dot under a strong probe field excitation. The calculations were performed within the compact density-matrix formalism under steady state conditions using the effective mass approximation. Our results show that: (i) the electronic structure and optical properties are sensitive to the dressed potential; (ii) under applied electric fields, an increase of the laser intensity induces a redshift of the optical absorption and rectification spectra; (iii) the augment of the electric field strength leads to a blueshift of the spectra; (iv) for high electric fields the optical spectra show a shoulder-like feature, related with the occurrence of an anti-crossing between the two first excited levels.     

Band-mixing and strain effects in InAs/GaAs quantum rings

We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.     

弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究

研究了低温(15 K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性. 研究表明,器件在零偏压下处于共振状态. 通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制. 所得结果可为弱耦合双量子点器件的制备提供基础. 关键词： 双量子阱 隧穿结构 磁电导振荡     

Exciton states in asymmetric GaInNAs/GaAs coupled quantum wells in an applied electric field

The electronic and optical properties of exciton states in GaInNAs/GaAs coupled quantum well (CQW) structure have been theoretically investigated by solving the Schrödinger equation in real space. The effect of well width on the exciton states has been also studied by varying the well width from 5?nm to 10?nm in asymmetric structures. The electron, hole and exciton states are calculated in the presence of an applied electric field. It is found that there are two direct (bright) exciton states with the largest oscillator strengths. Their energies weakly depend on the electric field due to the compensation between the blue shift and red shift of the electron–hole pair states. In addition, these two states are overlap in the case of symmetric CQWs and one of them is then shifted to higher energy in asymmetric CQWs. The ground state exciton has the binding energy of approximately 7.3?meV and decrease to around 3.0?meV showing the direct to indirect transition of the ground state. The direct–indirect crossover is observed at different electric field for different structure. It happens at the electric field when the e1–e2 electron anticrossing or h1–h2 hole anticrossings is observed, so that the crossover can be controlled by the well width of CQWs structure.