Finite-size correction in many-body electronic structure calculations

Finite-size (FS) effects are a major source of error in many-body (MB) electronic structure calculations of extended systems. A method is presented to correct for such errors. We show that MB FS effects can be effectively included in a modified local density approximation calculation. A parametrization for the FS exchange-correlation functional is obtained. The method is simple and gives post-processing corrections that can be applied to any MB results. Applications to a model insulator (P2 in a supercell), to semiconducting Si, and to metallic Na show that the method delivers greatly improved FS corrections.     

Strain Effect on the Absorption Threshold Energy of Silicon Circular Nanowires

In this work,the influence of strain on threshold energy of absorption in Silicon circular nanowires is investigated.For this purpose,we first have used the density functional theory(DFT) to calculate the electron and hole effective masses.Then,we have obtained absorption threshold energy with two different procedures,DFT and effective mass approximation(EMA).We have also obtained the band structures of Si nanowires both DFT and EMA.The results show that:i) the expansive strain increases the hole effective mass while compressive strain increases the electron effective mass,ii) the electron and hole effective masses reduce with decreasing the wire size,iii) the absorption threshold energy decreases by increasing strain for compressive and tensile strain and its behavior as a function of strain is approximately parabolic,iv) the absorption threshold energy(for all sizes) obtained using EMA is greater than the DFT results.     

Computational design of axion insulators based on 5d spinel compounds

Based on density functional calculation using the local density approximation+U method, we predict that osmium compounds such as CaOs(2)O(4) and SrOs(2)O(4) can be stabilized in the geometrically frustrated spinel crystal structure. They show ferromagnetic order in a reasonable range of the on-site Coulomb correlation U and exotic electronic properties, in particular, a large magnetoelectric coupling characteristic of axion electrodynamics. Depending on U, other electronic phases including a 3D Weyl semimetal and Mott insulator are also shown to occur.     

Indirect to direct gap transition in low-dimensional nanostructures of Silicon and Germanium

The electronic band structures of Si and Ge low-dimensional nanostructure such as nanofilms and nanowires have been calculated using first principles based on density functional theory (DFT) with the generalized gradient approximation (GGA). The calculation results show that a direct band gap can be obtained from Si orientation [100] or in Ge orientation [111] confined low dimensional nanostructure. However, an indirect band gap is still kept in the Si orientation [111] or in the Ge orientation [110] confined low dimensional nanostructure. The calculation results are interesting and the transition mechanism from indirect to direct band gap in low dimensional nanostructures is given in the physical structures model.     

Influence of background carriers on magnetic properties of Mn-doped dilute magnetic Si

Using hybrid exchange density functional calculations we show that the type of background carriers has profound effects on magnetic interactions in Mn doped dilute magnetic Si. The p- and n-type Si were simulated by introducing an extra hole and an extra electron, respectively in the 64 atoms Si supercell. In case of p-type Si compensated by a homogeneous background potential and 1.6% Mn, the ground state is ferromagnetic, whereas other conditions remaining the same, the ground state becomes antiferromagnetic for the n-type Si. The exchange energies in Mn-doped extrinsic Si are higher by about 1 eV/Mn atom compared to the Mn doped intrinsic Si. Calculated electronic structures reveal that in p-type Si:Mn the hole localises over Mn and the short range magnetic coupling increases. Our calculations indicate that localisation of magnetic polarons at the Mn site is likely, which in turn enhances long range magnetic interaction between Mn ions and responsible for FM stabilisation. On the other hand, in the n-type host electron–electron repulsion increases within Mn–Si impurity band and the short range coupling decreases, which destroys the long range spin polarisation. These calculations explain the observed ferromagnetism in the p-type Si:Mn at higher temperatures than in the n-type Si:Mn and the magnetic moments of the systems compare well with experiments.     

GdN,GdP和GdAs的电子结构：第一性原理研究

用从头计算第一性原理对Gd-V化合物进行了电子结构与磁性的理论研究.计算的理论基础是密度泛函理论和局域(自旋)密度近似,并应用了相对论性LMTO-ASA计算方法.结果表明Gd-V的非自旋极化能带均为半金属特征.在进行宽能带的自能修正后GdN的非自旋极化能带是半导体行为(E_{g≈019eV).自旋极化的LSDA计算结果表明Gd-V均为半金属性的能带结构,即空带与价带有微弱的交叠.在布里渊区的X点和Γ点,分别有n型和p型色散的能带穿过费米面.对于GdN而言,它的上自旋子带为半金属能带,而下自旋子带却 关键词：}     

First principles study of the magnetism driven by cation defects in CeO₂:the important role of O2p states

The magnetism driven by cation defects in undoped CeO 2 bulk and thin films is studied by the density functional theory corrected for on-site Coulomb interactions (DFT+U) with U = 5 eV for the Ce4f states and U = 7 eV for the O2p states. It is found that the Ce vacancies can induce a magnetic moment of the ～ 4 μ B /supercell, which arises mainly from the 2p hole state of the nearest neighbouring O atom (～ 1 μ B on per oxygen) to the Ce vacancy. The effect of the methodology is investigated, indicating that U = 7 eV for the O2p state is necessary to obtain the localized O2p hole state in defective ceria with cation vacancies.     

Nonlocal pseudopotentials and magnetic fields

We show how to describe the coupling of electrons to nonuniform magnetic fields in the framework of the widely used norm-conserving pseudopotential approximation for electronic structure calculations. Our derivation applies to magnetic fields that are smooth on the scale of the core region. The method is validated by application to the calculation of the magnetic susceptibility of molecules within density functional theory (DFT) in the local density approximation. Our results are compared with high-quality all-electron DFT results obtained using Gaussian basis sets and another recently proposed pseudopotential formalism.     

Carrier-mediated ferromagnetism in N co-doped (Zn, Mn)O-based diluted magnetic semiconductors

Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. In this Letter we report a theoretical study of (Zn, Mn)O system codoped with N, and show that this codoping can change the ground state from anti-ferromagnetic to ferromagnetic. We have carried out the first-principles electronic structure calculations and report total energy to estimate whether the ferromagnetic state was stable or not. Our approach is based on the spin-polarized relativistic Korringa–Kohn–Rostoker (SPR–KKR) density functional theoretical (DFT) method, within the coherent potential approximation (CPA). Self-consistent electronic structure calculations were performed within the local density approximation, using the Vosko–Wilk–Nusair parameterization of the exchange-correlation energy functional. Our results for energy difference between ferromagnetic sate and spin glass state as well as their dependence on concentrations were presented and discussed.     

Electronic structure and magnetism of Fe-doped SiC nanotubes

The electronic structure and magnetic properties of Fe-doped SiC nanotubes are investigated by using the first-principles method based on density functional theory(DFT) in the local spin density approximation(LSDA).The calculation results indicate that the SiC nanotube of Fe substitution for C exhibits antiferromagnetism while ferromagnetism features prominently when Fe substitutes Si.This is a kind of half-metal magnetic material.The formation energy calculation results show that the formation energy of ferromagnetic structure is 3.2 eV lower than that of antiferromagnetic structure.Fe atoms are more likely to replace Si atoms.Spin-orbit coupling induces electron spin polarization in the ground state.Also,the doping Fe atoms make relaxation towards the outside of the tube to some extent and larger geometric distortion occurs when Fe substitutes C,but the whole geometric structure of SiC nanotubes is not damaged due to the doping.It is revealed in the calculation of energy band structure and density of states that more dispersed distribution of energy levels is produced near the Fermi level.For Fe substitution for Si,obviously there are spin-split and intense p-d hybrid effects by Si 3p electron spins and Fe 3d electron spins localized at the exchanging interactions between magnetic transitional metal(TM) impurities.Spin electronic density results indicate that system magnetic moments are mainly generated by the unpaired 3d electrons of Fe atoms.All these results show that the transition metal doping SiC nanotube could be a potential route to fabricating the promising magnetic materials.     

Si掺杂锐钛矿TiO2的第一性原理研究

为了研究Si掺杂对锐钛矿TiO2的电子蛄构和光催化性能的影响,利用基于第一性原理的密度泛函理论计算了纯TiO2及Si掺杂TiO2的杂质形成能、能带结构及态密度.研究蛄果表明,Si的掺杂位置与制备条件有关,富钛和富氧条件下,Si最容易代替TiO2中Ti的位置.几何优化后Si掺杂TiO2超晶胞的晶格参数和晶胞体积都发生一定...     

有中心缺陷孔的椭圆孔光子晶体光纤传输特性研究

基于超格子构造法,采用全矢量模型研究了具有中心缺陷孔的椭圆光子晶体光纤的传输特性。着重讨论了中心缺陷孔对光纤中基模的模场分布、双折射特性和色散特性的影响。研究表明：与椭圆孔光子晶体光纤相比。由于中心椭圆缺陷孔的引入,使该光纤具有更高的模式双折射。光纤的传输特性对光纤的结构参量和波长具有较强的依赖关系。随着波长和中心缺陷孔的增加。双折射将增大,其模式双折射在10^-3量级。改变光纤的结构参量,可以获得超宽带的色散平坦或异常的色散特性。分析结果显示,当中心孔的尺寸de／D=0．4时。在波长1．55μm附近,可获得近400nm的色散平坦区。     

Structural feature and electronic property of an (8, 0) carbon--silicon carbide nanotube heterojunction

A supercell of a nanotube heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimization and the electronic property of the heterojunction are implemented through the first-principles calculation based on the density functional theory (DFT). The results indicate that the structural rearrangement takes place mainly on the interface and the energy gap of the heterojunction is 0.31eV, which is narrower than those of the isolated CNT and the isolated SiCNT. By using the average bond energy method, the valence band offset and the conduction band offset are obtained as 0.71 and --0.03eV, respectively.     

Nonautonomous helical motion of magnetization in ferromagnetic nanowire driven by spin-polarized current and magnetic field

Under the generalized gradient approximation (GGA), the electronic and magnetic properties are studied for H-terminated zigzag edge Si nanoribbon (ZSiNR) decorated with a single C chain by using the first-principles projector augmented wave (PAW) potential within the density function theory (DFT) framework. The results show that either a perfect ZSiNR or a single C chain decorated ZSiNR, the ferromagnetic state is preferred over the antiferromagnetic state. But a single C chain decorated ZSiNR is more stable than the perfect one. Furthermore, the electronic and magnetic properties of a ZSiNR can be modulated in detail by a single C chain at different positions.     

First principles study of the magnetism driven by cation defects in CeO2: the important role of O2p states

The magnetism driven by cation defects in undoped CeO2 bulk and thin films is studied by the density functional theory corrected for on-site Coulomb interactions （DFT＋U） with U = 5 eV for the Ce4f states and U = 7 eV for the O2p states. It is found that the Ce vacancies can induce a magnetic moment of the -4 gB/supercell, which arises mainly from the 2p hole state of the nearest neighbouring O atom （-1μB on per oxygen） to the Ce vacancy. The effect of the methodology is investigated, indicating that U = 7 eV for the O2p state is necessary to obtain the localized O2p hole state in defective ceria with cation vacancies.     

Core level binding energy shifts between free and condensed atoms

Assuming a fully screened final state (in the metallic case) and using the (Z + 1) approximation and a Born—Haber cycle we calculate the shift in the core level binding energy between the free atom and its metallic state. The agreement with known experimental shifts is shown to be very good. Utilization of the present method can for example give accurate core level binding energies for those free atoms where such data only exist for the metallic phase.     

Improved fake mode free plane wave expansion method

We analyze the origin of the fake modes introduced by the plane wave expansion method with three-dimension (3D) supercell approximation. Through the detailed analysis of the energy distribution of fake modes and real modes, we propose the plane wave expansion-three planar-slab waveguides method to remove the fake modes and obtain the fake mode free band structure of a two-dimensional air hole photonic crystal slab. To the best of our knowledge, this is the first time that such a fake mode free photonic crystal band structure is presented. Our method is also definitely useful in designing other 3D devices.     

Atomic and electronic structures of p-type dopants in 4H-SiC

Using hybrid density functional calculation,we study the atomic and electronic structures of p-type dopants,B,Al and Ga,in 4 H-SiC.For B,depending on the growth condition,it can occupy both Si and C sites.In contrast,Al and Ga on the C sites exhibit too high formation energy to exist in a significant amount.In 4 H-SiC,there exist two types of Si sites in wurtzite-like and zincblende-like local coordination,respectively.Our calculations suggest that the dopant atoms have negligible preference occupying the two sites.In neutral charge state,all the dopants exhibit significant distortions from the structure in the negatively charged state.For most cases,our calculations yield three distorted structures,in which the most stable one has the dopant atom displaced along its bond with one of the surrounding equatorial Si or C atoms,lowering the C_(3 v) symmetry to Cs symmetry(i.e.,a mirror symmetry only).Among the three dopant elements,Al on Si sites exhibits overall the lowest formation energy and the shallowest acceptor level.Nevertheless,it is not a hydrogenic dopant with the acceptor level 0.12 eV above the valence band maximum based on calculation using a 400-atom supercell.Its corresponding defect state exhibits apparent localization along the [0001] direction,but it is relatively delocalized in the(0001) plane.     

Electronic,structural and magnetic properties of TbO under pressure: FP-LAPW study

ABSTRACT

Using the framework of the density functional theory, we calculated electronic, magnetic and structural properties of terbium oxide (TbO) in rocksalt (RS), cesium chloride (CsCl) and zincblende (ZB). Full potential linearized augmented plane wave (FP-LAPW) method within the local spin density approximation (LSDA) and generalized gradient (PBE-GGA) approximations are used. Magnetic and non-magnetic calculations are performed and a modified version of Becke and Johnson (mBJ) exchange potential has been used to calculate the band gaps. We found that, although TbO is stable in a ferromagnetic state, it is stable in RS phase at ambient condition. Both LSDA and PBE-GGA calculations revealed that the three structures are metallic. However, using the mBJ calculation, it is clear that RS and CsCl phases of TbO compound are metallic, while ZB phase is found to be an insulator in the spin-up case and a semiconductor in the spin-down case at ambient pressure.