Morphology and Crystal Structure of Wholly Aromatic All-Para Polyamide-Hydrazide Polymers

The morphology of some amide-hydrazide polymers of the type useful for high-modulus X-500 class fibers has been characterized by transmission electron microscopy of thin films crystallized from dilute solution. Selected area electron diffraction was used to characterize the crystallinity and crystal structure of the thin films and precipitated polymer. The films were cast from concentrated solutions and crystallized by heating the films. The results of these studies revealed several unique features relative to the crystal structure of the all-para polymers. Thin films of the crystallized polymer showed a distinctive crystalline texture—the molecular chains were found to be preferentially oriented parallel to the film plane and randomly oriented about an axis normal to the film plane. Electron diffraction measurements showed equatorial reflection maxima at tilt angles of = 30, ±48, and =59 when the films were tilted on an axis parallel to the film plane. From these results a tentative crystal unit cell and theoretical crystal density were determined: a = 8.5 [Agrave], b = 4.9 Å, c (chain axis) = 29.6 Å, p (density) =1.51 g/cc. The value a/b = 1.735, which is very near 3¹/², implies essentially hexagonal packing of the chains. Crystallization from dilute solution revealed lamellar structures resembling “single crystals” in the electron microscope similar to those observed in other crystalline polymers. However, in contrast to these other polymers, these “crystals” are not likely to contain folded chains because of the very rigid nature of the all-para poiyamide-hydrazide.     

Multi-electron transfer in composite phthalocyanine thin films: structure and electrochromic properties

Both sequentially deposited double-layered and codeposited composite thin films were prepared by using two kinds of phthalocyanines. The structure and the electrochromic property of these thin films were compared with those of simple phthalocyanine films. The structures of the films were analyzed by scanning electron microscopy (SEM), X-ray diffrction (XRD) and electron spin resonance (ESR) spectra. From the viewpoint of morphology and crystallinity, codeposited thin films have the same structure as the simple one, having sharp peaks at ca. 2θ=7.0° in the XRD pattern and narrow crystal grains in SEM photographs. ESR measurements have revealed that phthalocyanine molecules disperse very well in the codeposited thin films in a molecular level in comparison with the physical mixture of phthalocyanine powders. This high dispersibility of the molecules in the codeposited thin films can play a role to improve the reversibility in the electrochromism. Thus, the reversibility of the phthalocyanine, which shows irreversible electrochromism in the simple film form, can be improved by the codeposition with another phthalocyanine with reversible electrochromism. In contrast, sequentially deposted double-layered thin film gives completely different results. The electrochromism of the double-layered film depends on the property of the simple phthalocyanine thin film which is in contact with the substrate.     

Structural and electrochemical studies of annealed LiNiVO4 thin films

We prepared stoichiometric lithium nickel vanadate amorphous thin films by using r.f. magnetron sputtering under controlled oxygen partial pressure. The amorphous films were heated at various temperatures, 300–600 °C, for 8 h. The as‐deposited and annealed thin films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The electrochemical behavior of the various films was studied by the galvanostatic method. The cells were tested in a liquid electrolyte at room temperature, with lithium metal used as the counter and reference electrode. The best electrochemical storage value was obtained with the thin film annealed at 300 °C, which showed superior capacity and small capacity loss during cycling. Copyright © 2007 John Wiley & Sons, Ltd.     

Synthesis of thin dense titania films via an aqueous solution-gel method

Nanostructured titanium dioxide films have been reported to be used in many applications ranging from optics and solar energy devices to gas sensors. This work describes the synthesis of nanocrystalline titania films via an aqueous solution-gel method. The thin films are deposited by spin coating an aqueous citratoperoxo-Ti(IV)-precursor solution onto a silicon substrate. The influence of processing parameters like Ti⁴⁺ concentration and crystallization temperature on the phase formation, crystallite size and surface morphology of the films is studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). Furthermore, the effect of successive layer deposition on the film thickness of the resulting films is studied by means of cross sectional SEM. SEM and TEM micrographs clearly show that, after optimization of the process parameters, thin, smooth, dense nanocrystalline films are synthesized in a reproducible manner. The films are composed of 15–20 nm grains. At higher crystallization temperatures (600, 650°C) also larger particles (40–70 nm) are present. XRD data reveal that a phase pure anatase film is formed at 450°C. Crystallization temperatures equal to or higher than 600 °C however give rise to the formation of both the anatase and rutile crystalline phases. The smoothness of the films is proved by their very low rms surface roughness (≤1.1 nm) measured by AFM.     

Enhanced photoinduced super-hydrophilicity in sol–gel TiO2 thin films with co-doped Sn/Nb

In this work, Sn and Nb co-doped TiO₂ were coated on glazed porcelain substrates via sol–gel dip coating method. Field emission-scanning electron microscopy, transmission electron microscopy, and UV–vis spectrophotometer were used to evaluate thickness and optical properties of the thin films. Surface chemical state of thin films was examined by atomic X-ray photoelectron spectroscopy. Water contact angle on the film surfaces was measured by a contact angle analyzer under solar light irradiation. The optical results indicated that Sn/Nb dopant in TiO₂ thin film changed the absorption edge from ultraviolet to visible light and exhibited excellent photo-catalytic ability for degradation of methylene blue solution under solar irradiation. Wettability results indicated that Sn and Nb dopant ions had significant effect on the hydrophilicity property of thin films.     

Phase separation morphology of thin films of polystyrene/polyisoprene blends

We present the results of a study of the morphology of phase separation in a thin film blend of polystyrene (PS) and polyisoprene (PI) in a common solvent of toluene. The blend is quenched by rapid solvent evaporation using a spincoating technique rather than a temperature quench. The mass fraction of polystyrene is varied to determine the effect of the substrate on thin film phase separation morphology. We compare the phase separation morphology for very thin films of the PS/PI blend cast onto three different substrates: Si(001) with a native oxide layer (Si (SINGLEBOND) SiO_x), Si(001) etched in hydrofluoric acid (Si-H), and a Au/Pd alloy sputtered onto Si(001). We observe large differences between the morphologies of 1000 Å thick blend films on the Si(SINGLEBOND) SiO_x and Si-H substrates as the mass fraction is varied due to the difference in the wetting properties of PS on the two substrates. Smaller differences are observed between the films on the Si(SINGLEBOND) SiO_x and Au/Pd substrates only for film thicknesses h < 600 Å. © 1996 John Wiley & Sons, Inc.     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Nanocrystals grown in amorphous Cr and CrNi thin films

The structure of vacuum annealed amorphous sputtered Cr and CrNi (55:45) thin films has been studied by transmission electron microscopy (TEM) and electron diffraction (TED). The thin films with thicknesses ranging from 150 to 600 Å were annealed while still on their alkali halide substrates under high vacuum at temperatures ranging from 200 to 370°C. The TEM and TED data permitted to establish the annealing conditions (temperature, duration), which lead to the nucleation and growth of nanosized crystals in the Cr and CrNi icosahedral glasses.     

Structure of friction-transferred highly oriented poly(3-hexylthiophene) thin films

Oriented thin films of P3HT were obtained by a friction-transfer technique. The morphology and structure of the film were studied by means of optical microscopy, atomic force microscopy and transmission electron microscopy. Optical microscopy observation indicates that large size well-ordered P3HT thin films can be produced by a friction-transfer technique. Highly ordered lamellae were observed in P3HT friction-transferred films by electron microscopy. Electron diffraction results confirm the existence of high orientation with the a- and c-axes of P3HT crystals aligned in the film plane while the c-axis parallel to the friction-transfer direction. The atomic force microscopy observation of the as-prepared P3HT thin film shows, however, a featureless top surface morphology, indicating the structure inhomogeneity of the obtained film. To get highly oriented P3HT thin films with homogenous structure, high temperature annealing, solvent vapor annealing and self-seeding recrystallization of the friction-transferred film were performed. It is confirmed that solvent vapor annealing and self-seeding recrystallization methods are efficient in improving the surface morphology and structure of the frictiontransferred P3HT thin film. Highly oriented P3HT films with unique structure can be obtained through friction-transfer with subsequent solvent vapor annealing and self-seeding recrystallization.     

Characterization of silver selenide thin films grown on Cr‐covered Si substrates

Thermal stability of silver selenide thin films formed from the solid‐state reaction of Ag‐Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X‐ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as‐deposited films and those annealed at 100, 200, 300, and 400 °C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film. Copyright © 2008 John Wiley & Sons, Ltd.     

Nanostructural properties of zinc oxide thin films grown on non‐planar substrates

The crystallographic structure of zinc oxide thin films grown on optical fibres using single source chemical vapour deposition (SSCVD) was analysed using near edge X‐ray absorption fine structure (NEXAFS). Zinc diethyl carbamate was used as a precursor for the growth of highly conformal films in a one‐step deposition process without substrate rotation and at substrate temperatures of 400–575 °C. It was found that the growth temperatures greatly affected the crystallographic structure of the film with no preferred crystallographic orientation and negligible crystallinity at low temperatures and very high crystallinity with pure c‐axis orientation at high temperatures. Cross‐sectional analysis of the films by scanning electron microscopy (SEM) showed the presence of a film at all points around the fibre. These films generally consisted of densely packed columns that bore a strong resemblance to c‐axis‐oriented films grown on planar substrates. Copyright © 2005 John Wiley & Sons, Ltd.     

Preparation and characterization of nanocomposite ZnO–Ag thin film containing nano-sized Ag particles: influence of preheating,annealing temperature and silver content on characteristics

Nanocomposite ZnO–Ag thin film containing nano-sized Ag particles have been grown on glass substrate by spin-coating technique using zinc acetate dihydrate as starting precursor in 2-propanol as solvent and monoethanolamine as stabilizer. Silver nanoparticles were added in the ZnO sol using silver nitrate dissolved in ethanol-acetonitrile. Their structural, electrical, crystalline size and optical properties were investigated as a function of preheating, annealing temperature and silver content. The results indicated that the crystalline phase was increased with increase of annealing temperature up to 550 °C at optimum preheating temperature of 275 °C. Thermal gravimetric differential thermal analysis results indicated that the decomposition of pure ZnO and nanocomposite ZnO–Ag precursors occurred at 225 and 234 °C, respectively with formation of ZnO wurtzite crystals. The scanning electron microscopy and atomic force microscopy revealed that the surface structure (the porosity and grain size) of the ZnO–Ag thin film (the film thickness is about 379 nm) was changed compared to pure ZnO thin film. The result of transmission electron microscopy showed that Ag particles were about 5 nm and ZnO particles 58 nm with uniform silver nanoclusters. Optical absorption results indicated that optical absorption of ZnO–Ag thin films decreased with increase of annealing temperature. Nanocomposite ZnO–Ag thin films with [Ag] = 0.068 M and [Ag] = 0.110 M showed an intense absorption band, whose maximum signals appear at 430 nm which is not present in pure ZnO thin films. The result of X-ray photoelectron spectroscopy revealed that the binding energy of Ag 3d_5/2 for ZnO–Ag shifts remarkably to the lower binding energy compared to the pure metallic Ag due to the interaction between Ag and ZnO.     

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

ZnO thin films were successfully deposited on SiO₂/Si substrate using the sol–gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Characterization and electrochemical deposition of natural melanin thin films

Melanin is an important class of biological pigments because of its distinct chemical and physical properties. The electrochemical deposition of natural melanin thin films was studied using two different techniques; constant potential and cyclic voltammetry along with a deposition time of five hours. The thin films deposited electrochemically on a fluorine-doped tin oxide conductive glass substrate using the constant potential method, exhibited faster growth rate and better adhesion to the fluorine-doped tin oxide working electrodes than those deposited using the cyclic voltammetry method. The thin films deposited on the fluorine-doped tin oxide conductor glass using the constant potential method were also more homogeneous than those deposited via the cyclic voltammetry technique. The increase of film thickness is related to the increase of electrochemical deposition time. Interestingly, the electrochemical deposition using the constant potential method had the advantage of consuming less electric charge. The physical and chemical structures of the melanin thin films were characterized using ultraviolet–visible absorption spectroscopy, Fourier-transform infrared spectroscopy, and X-ray diffraction analysis. The ultraviolet–visible absorption spectra showed the correlation between the variation of deposition rates of melanin and the type of electrochemical technique employed as well as the thickness of the film. The average thickness of the film is 500 nm which absorb 40% of light in both type of films. The atomic force microscopy images illustrated the homogeneous deposition of the melanin molecules on the fluorine-doped tin oxide conductive glass substrate, indicating that the thickness of the thin films can be controlled. We estimated an average grain size of 14.093 Å. The ease of preparing such thin films of organic materials can open new avenues towards the use of soft conductors, in contrast to the complex preparation of industrial semiconductors.     

Quantitative analysis of an organic thin film by XPS,AFM and FT‐IR

We report the characterization of Firpic (iridium(III)bis[4,6‐di‐fluorophenyl]‐pyridinato‐N,C²,]picolinate) organic thin film prepared by vacuum deposition to provide a systematic route to organic film quantification. To analyze the characteristics of thin Firpic films on a Si substrate, various techniques such as XPS, Fourier transform infra‐red (FT‐IR) spectrometer, and atomic force microscopy (AFM) are utilized. The Firpic films remain stable without surface morphological or compositional change during deposition and after exposure to X‐ray irradiation or atmospheric environment, for which qualities these films are believed to be an ideal platform as a pure organic thin film. The monotonic increases in FT‐IR and XPS intensities with film thickness are matching well with each other. In particular, from the XPS intensity analysis, the relative atomic sensitivity factors of the present system, electron attenuation length, and molecular density in the organic thin film can be evaluated. Copyright © 2011 John Wiley & Sons, Ltd.     

Optical,electrical, and electrochemical behavior of p-type nanostructured SnO<Subscript>2</Subscript>:Ni (NTO) thin films

The physical and electrochemical properties of sol-gel synthesized nickel-doped tin oxide (NTO) thin films were investigated. The X-ray diffraction results showed that NTO samples exhibited a tetragonal structure. The average crystallite size and the unit cell volume of the films were reduced by Ni increment, while the stacking fault probability was increased. Furthermore, the field-emission scanning electron microscopy images clearly displayed that the worm-like surface morphology of the SnO₂ thin films was altered to the spherical feature in 3 and 10 mol% NTO samples. Moreover, by virtue of Ni incorporation, the average transparency of the SnO₂ thin films rose up from 67 to 85% in the visible region; also, the optical band gap of the SnO₂ sample (3.97 eV) increased and the thin film with 3 mol% dopant concentration showed a maximum value of 4.22 eV. The blue/green emission intensities of photoluminescence spectra of SnO₂ thin film changed via Ni doping. The Hall effect measurements revealed that by Ni addition, the electrical conductivity of tin oxide thin films altered from n- to p-type and the carrier concentration of the films decreased due to the role of Ni²⁺ ions which act as electron acceptors in NTO films. In contrast, 20 mol% Ni-doped sample had the highest mobility about 9.65 cm² (V s)^?1. In addition, the cyclic voltammogram of NTO thin films in KOH electrolyte indicated the charge storage capacity and the surface total charge density of SnO₂ thin films enhanced via Ni doping. Moreover, the diffusion constant of the samples increased from 2?×?10^?15 to 6.5?×?10^?15 cm² s^?1 for undoped and 5 mol% dopant concentration. The electrochemical impedance spectroscopy of the NTO thin films in two different potentials showed the different electrochemical behaviors of n- and p-type thin films. It revealed that the 20 mol% NTO thin film had maximum charge transfer at lower applied potential.     

Effects of deposition temperature and annealing temperature on the morphology and electrochemical capacitance of Ni(OH)2 thin films

In this paper, we report 3D nickel (II) hydroxide thin films with porous nanostructures prepared on Ni foam by direct current electrodeposition from aqueous solution of Ni(NO₃)₂ through basic chemicals. The effect of deposition temperature on Ni(OH)₂ thin film morphology is examined by field emission scanning electron microscopy, which is found to have significant influence on capacitance performance of Ni(OH)₂ thin films. Moreover, the effect of annealing temperature on electrochemical capacitance and long-time stability of Ni(OH)₂ thin films is investigated. An optimum-specific capacitance value of 2,447?farads?g^?1 is obtained for Ni(OH)₂ thin film deposited at 20?°C and annealed at 100?°C.     

Deposition of Silicon Carbide Thin Films from 1,1-Dimethyl-1-Silacyclobutane

1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline β-SiC thin films were grown at temperatures 1100 and 1200°C. At temperatures between 950 and 1100°C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).     

Thickness dependence of the structural,mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Ni thin films with different thicknesses were deposited on pre‐treated polyimide substrates by ion beam‐assisted deposition. Dependence of structural, mechanical and electrical properties of the Ni films on their thickness was investigated. The results showed a clear correlation between film properties and film thickness. The inter‐diffusion at the interface regions of the films with different deposition time were demonstrated by transmission electron microscopy and X‐ray photoelectron spectroscopy. With increasing film thickness, surface roughness of the Ni films firstly decreased and then increased, while the grain size gradually increased. Residual stress of the Ni thin films decreased with increasing Ni film thickness up to 202 nm and then slightly increased as the film thickness further increased. Resistivity decreased, and temperature coefficient of resistivity (TCR) increased with increasing film thickness due to the enhancement of crystallization degree and the increase in grain size. The decrease in surface roughness and residual stress also contributed to the decrease of resistivity and the increase of TCR of the films. An optimal film thickness is suggested, which yielded a relatively high TCR value and low levels of both surface roughness and residual stress. Copyright © 2012 John Wiley & Sons, Ltd.