共查询到18条相似文献,搜索用时 93 毫秒
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垂直腔面发射半导体微腔激光器 总被引:19,自引:0,他引:19
评述了垂直腔面发射半导体激光器研究的最新进展,就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述,探讨了进一步降低半导体激光器阈值的途径,介绍了新型的氧化约束型垂直腔面发射半导体激光器,并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述,同时展望了该器件的应用及发展前景。 相似文献
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径向桥电极高功率垂直腔面发射激光器 总被引:1,自引:0,他引:1
为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。 相似文献
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为实现对垂直腔面发射半导体激光器氧化孔径的精确控制,提高其光电特性,对湿法氧化工艺进行了实验研究.在不同的氧化温度下,对相同结构的垂直腔面发射半导体激光器模拟片进行湿法氧化.采用X射线能谱分析仪,对氧化后模拟片的氧化层按不同的氧化深度对其氧化生成物进行检测.依据氧化生成物中氧元素组分浓度的变化,对氧化过程进行了分析与讨论,推导出在一定的温度下,氧化速率随时间变化的一般规律.提出了在垂直腔面发射半导体激光器的湿法氧化工艺过程中,适当降低氧化温度,延长氧化时间,可减小氧化限制孔径的控制误差,提高氧化工艺的准确性与稳定性. 相似文献
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液晶与垂直腔面发射半导体激光器(VCSELs)阵列结合可实现波长可调谐、偏振精确控制等,同时液晶的引入也会改变垂直腔面发射半导体激光器阵列的热特性,本文设计了表面液晶-垂直腔面发射激光器阵列结构,并开展了阵列的热特性实验研究.对比分析了向列相液晶层对VCSEL阵列热特性的影响,实验结果表明,1×1,2×2,3×3三种表面液晶-VCSEL阵列的阈值电流温度变化率最高可降低23.6%,热阻降低26.75%;同时,激光器阵列各发光单元之间的温度均匀性显著提高,出光孔与周围温差小于0.5℃.综上所述,VCSEL阵列中液晶层的引入不仅大大加速激光器阵列单元热量扩散,而且降低了有源区结温,提高了VCSELs激光器阵列热特性,为实现高光束质量的单偏振波长可控VCSEL激光器阵列打下了良好的理论和实验基础. 相似文献
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吸收对垂直腔面发射激光器光学特性的影响 总被引:2,自引:2,他引:0
采用光学传输矩阵方法,详细分析了反射镜以及键合界面的吸收对垂直腔面发射激光器光学特性的影响. 结果表明,反射镜以及键合界面的吸收对反射镜和垂直腔面发射激光器的反射率和势透射率有较大影响,而对反射镜中心波长处的反射相移以及垂直腔面发射激光器模式的反射相移和模式位置影响很小. 随着反射镜以及键合界面的吸收增大,反射镜中心波长处的反射率逐渐减小,垂直腔面发射激光器的模式反射率变化则是先急剧减小,达到一个极小值,然后再逐渐增大,而反射镜中心波长处以及垂直腔面发射激光器模式处的势透射率则都是迅速降低的. 此外,将有吸收的键合界面离有源区的距离远一些,有利于提高垂直腔面发射激光器模式处的光输出效率. 相似文献
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The use of interdiffused quantum wells to enhance single transverse mode operation in vertical cavity surface emitting semiconductor lasers is proposed and analysed theoretically. It is found that by introducing a step diffused quantum well structure inside the core region of a quantum-well active layer, the influence of self-focusing (due to carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized. Therefore, stable single-mode operation in vertical cavity surface emitting lasers can be maintained. 相似文献
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近年来,水平腔面发射半导体激光器具有高功率、高光束质量及易封装集成等优良性能,已成为激光器领域的研究热点。本文详细阐述了几种水平腔面发射半导体激光器的结构设计、工作原理以及激光输出特性,并对该激光器国内外最新研究进展与发展现状进行了总结和论述。在此基础上,对该激光器的研究方向和发展趋势进行了分析与展望。目前,水平腔面发射半导体激光器的激光输出功率可达瓦级,美国Alfalight公司引入曲线形光栅的单一发射器输出功率可达73 W。随着应用领域的不断拓展,中远红外波段水平腔面发射激光器将成为未来的研究焦点。 相似文献
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M. Bardoux A. Bousseksou G. Tessier S. Bouchoule D. Fournier A. Salhi Y. Rouillard F. Genty 《Optics and Lasers in Engineering》2009,47(3-4):473-476
Thermal characterization of semiconductor lasers is an important issue for optoelectronics. This paper presents our thermoreflectance measurements on two different types of laser diodes: classical ridge laser diodes and vertical cavity surface emitting lasers (VCSELs). We first studied the external temperature increase in ridge diodes in order to determine inhomogeneity. Then, we tried to determine the inner temperature of the VCSELs. 相似文献
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We demonstrate chaotic mode lasing in vertical cavity surface emitting lasers at room temperature, with an open cavity confined laterally by the native oxide layer. Instead of introducing any defect mode, we show that suppression of lower-order cavity modes can be achieved by destroying vertical reflectors with a surface microstructure. Lasing on chaotic modes is observed directly through collecting near-field radiation patterns. Various vertical emission transverse modes are identified by the spectrum in experiments as well as numerical simulations in real and phase spaces. 相似文献
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提出并实现了新型隧道再生耦合大光腔半导体激光器,近场光斑宽度达到1μm,较普通半导体激光器提高了一个数量级,有效地解决了普通半导体激光器由于发光面积狭窄而导致的端面灾变性毁坏和垂直发散角大的问题. 采用低压金属有机物化学气相沉积方法生长了以C和Si分别作为掺杂剂的AlGaAs隧道结、GaAs/InGaAs应变量子阱有源区和新型半导体激光器外延结构,并制备出器件,其垂直发散角为20°,阈值电流密度为277A/cm2,斜率效率在未镀膜时达到0.80W/A.
关键词:
半导体激光器
大光腔
隧道再生 相似文献
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Nikolay N. Elkin Anatoly P. Napartovich Dmitry V. Vysotsky 《Optics Communications》2012,285(4):481-486
One of the promising laser constructions having much attention in the past years is thin-disc semiconductor lasers with the resonant periodic gain in a form of multiple quantum wells. The 3D numerical model is developed based on combining bi-directional beam propagation method with the round-trip operator technique. The standing wave effect in resonant gain structure and diffraction in the external laser cavity are taken into account explicitly. Characteristics of optical modes are found numerically for cylindrical vertical extended cavity surface emitting laser with above-threshold pumping. Variation of distance to the external mirror is found to result in notable changes in power and optical quality of the output beam. The decisive role of gain and index non-linearities in these changes is identified. 相似文献
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It is known that the turn-on delay time, td, for semiconductor lasers depends on the functional form of the recombination rate. Previously, an analytic expression for td had been obtained, following simple approximations. In this paper, on the basis of the rate equations for quantum well vertical cavity surface emitting lasers (VCSEL), an explicit analytical expression for the turn-on delay of the VCSEL has also been deduced for the general case. The time evolution of the carrier density within the turn-on period of VCSEL has been derived for the case, where the Auger effect is considered as a term proportional to the cube of the carrier density. 相似文献