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对硼酸铅玻璃体材料样品进行热辅助的平板电场极化(简称热极化)后,通过观察其光学二次谐波(SHG)信号的强弱,得到了不同组分的样品的最佳极化温度,发现其最佳极化温度与玻璃化温度满足一定的关系;同时得到了不同组分的样品在各自的最佳极化温度条件下极化后的二次谐波信号强度与组分的关系;经过对一种组分的样品进行细致研究,发现样品的二次谐波信号强度随着极化电压的增大而增大,并满足幂函数关系.利用有效偶极子释放模型解释了样品的二次谐波信号强度与极化电压之间的超平方关系
关键词:
SHG
玻璃
极化 相似文献
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掺半花菁二氧化硅薄膜二阶光学非线性与薄膜结构的动态变化关系 总被引:1,自引:1,他引:0
用溶胶-凝胶技术制备的掺入半花菁染料的二氧化硅薄膜在不加电场极化条件下,由半花菁分子的自取向导致光学二次谐波产生,定量测得厚度为50nm薄膜的二阶非线性系数x(2)为6.6pm/V,着重研究了薄膜稳定前的溶剂挥发过程中,膜结构的变化以及相应二阶光学非线性的变化,在成膜后的四个小时中,质子化半花菁逐步转化为单体和聚集体态,同时,光学二次谐波信号也不断增大,还观察到在这一过程中出现了单体和聚集态半花菁 相似文献
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为探索不同的极化条件对分子取向的影响,用旋涂法制备了偶氮主客体掺杂薄膜,并用电晕极化的方法分别在不同温度和厚度条件下使分子取向,通过测量极化前后紫外-可见吸收谱,研究了平均取向因子的变化,并和二次谐波产生结果进行了比较。实验结果表明:对于厚度相同的偶氮薄膜,随着温度的升高,平均取向因子增大,但二次谐波信号强度先增大后减小;温度越接近聚合物玻璃转变温度,分子越容易取向,但温度过高,聚甲基丙烯酸甲酯变为粘滞态,部分偶氮分子容易在高温下蒸发掉,导致二次谐波信号强度降低,而平均取向因子增大;随着薄膜厚度的增大,针-板电极电场造成薄膜内部电场分布的不均匀性增加,极化效率降低,平均取向因子不断减小,二次谐波信号强度先增大后减小。 相似文献
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异质外延生长钙钛矿结构氧化物薄膜 总被引:1,自引:0,他引:1
影响直接外延生长氧化物薄膜的因素有很多,最主要的是保证氧化物薄膜的正确成相和在单晶衬底上成核.直接外延生长时,衬底温度影响到薄膜的成相.衬底温度还影响薄膜的生长动力学,并因此影响薄膜的外延生长取向.由于薄膜是首先在衬底表面成核、成相并生长的,因此衬底材料晶格的影响是不容忽视的.衬底材料(或异质外延材料)与薄膜的相互作用是影响外延生长的最直接因素,而晶格常数失配会造成薄膜样品中存在应力并影响样品性质.利用脉冲激光淀积法,我们成功地外延生长了YBa2Cu3O7超导薄膜、Sr0.5Ba0.5TiO3铁电介电薄膜、La0.7Ca0.3MnO3铁磁巨磁电阻薄膜、La0.5Sr0.5CoO3导电薄膜等多种具有钙钛矿结构的氧化物功能薄膜.以这些钙钛矿结构氧化物薄膜的外延生长为例,本文讨论影响氧化物薄膜异质外延生长的因素 相似文献
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利用紫外脉冲激光源淀积生长氧化物薄膜的技术,我们在SiTiO3衬底上成功地外延生长了超薄超导YBa0.2Cu3O7薄膜样品.样品YBa0.2Cu3O7层厚度分别为2.4nm至10.8nm(二至九个原胞).四端引线电阻法测量了样品的电阻温度关系和超导转变.超导零电阻温度分别为16K至81K.超薄超导薄膜样品显示当YBa0.2Cu3O7层厚度达到和超过四个原胞层厚(9.6nm)时,厚度变化对样品超导零电阻转变的影响并不十分明显.实验观察到YBa0.2Cu3O7层厚度对样品超导零电阻温度和超导起始转变影响不同.这说明样品中的缺陷对样品性能有着不容忽视的影响.超薄YBa0.2Cu3O7超导薄膜样品的成功制备为进一步的研究提供了有利条件. 相似文献
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The second harmonic generation (SHG) technique has been applied to investigate the nonlinear optical properties of thin films
of hydrogenated amorphous silicon on a glass substrate. SHG measurements have been performed in two transmission experimental
schemes. Modeling of a film as a three-layer structure and considering the interference and absorption at the SH wavelength
have been carried out. The dependence of the nonlinear susceptibility on the film thickness was used to separate the bulk
electric dipole contribution. 相似文献
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银表面光学二次谐波参数的研究 总被引:1,自引:0,他引:1
本文测量了几种玻璃-银膜界面反射二次谐波随入射光偏振角的变化,测量了超高真空中多晶银基底上冷凝银膜表面退火前后的反射二次谐波,以及超高真空中纯度为99.99%多晶银表面的反射二次谐波,计算了垂直和平行表面谐波电流参数a、b,得到对棱镜-银界面b=-0.97;α=2.1,多晶银表面α=-9,冷凝银膜退火前后α分别为7和-5.结果表明.α对表面状况极为敏感. 相似文献
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采用线性吸收谱和二次谐波产生技术研究了温度对具有中心对称结构的稀土夹心双萘酞菁化合物LB膜光学特性及其LB膜结构的影响。研究发现,加热可以使其LB膜的结构及分子间的相互作用发生变化,并形成J聚集体,从而使得吸收峰发生红移。稀土夹心双萘酞菁化合物约在40 ℃时其二次谐波信号有一个极小值,约在65 ℃时该化合物发生相变,使得二次谐波信号产生极大值,二次谐波信号最小时温度可高达180 ℃,说明该化合物的化学结构较为稳定。 相似文献
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The asymmetric distributions of surface optical second harmonic generation
(SHG) through azimuthally angular scans of (111) silicon wafers on which
thin silver films were deposited, have been detected with different
polarizations of output beams. On account of the inversion symmetry of
silicon crystals, the SHG for the Ag/Si system is mainly contributed by the
silver film and the silicon surface. In this work, we found that the
interface strain implies an asymmetric intensity variation of SHG with
respect to the surface azimuthal angles as an ultra thin Ag film is
deposited on silicon wafers. This asymmetric behavior is prominent as the
deposited silver layer is heated so that the continuous film aggregates to
become granular nanoparticles. Similar changes of the surface asymmetric SHG
are observed for a bare Si wafer imposed upon by an external force. 相似文献
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硫化铋微晶掺杂薄膜的制备及光学性能的研究 总被引:1,自引:0,他引:1
用溶胶-凝胶法能够有效地制备含0.5%的具有量子尺寸效应的Bi2S3微晶掺杂硅薄膜。薄膜的室温透射光谱发现,在500℃热处理时,随着热处理时间的延长,薄膜的特征透射谱谷会发生向长波方向的移动,作者认为这样的移动于量子尺寸效应。本文还报道了在YAG强激光的作用下能够观察到薄膜样品所产生的倍频信号,并讨论了产生倍频的原因。 相似文献
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利用1.064μm基频超短脉冲激光,使用光学二次谐波方法研究了超高真空中蒸镀在多晶银表面上的C60薄膜紫外光照射下的光聚合现象,发现聚合以后的C60二阶非线性响应增强,同时观察到光聚合的饱和效应,C60光聚合二阶非线性的提高可以用电四极了磁偶极子对二次谐波贡献的增强来解释。 相似文献
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Q. Liu B. Poumellec C. Haut D. Dragoe R. Blum G. Girard J.-E. Bourée A. Kudlinski Y. Quiquempois G. Blaise 《Applied Physics A: Materials Science & Processing》2005,81(6):1213-1219
Amorphous N- or Ge-doped H:SiO2 films deposited on silica by the matrix distributed electron cyclotron resonance-PECVD method were irradiated by an electron-beam with different doses in order to pole the material and induce second harmonic generation (SHG). SHG was measured using the Maker-fringe method. When irradiated at an acceleration voltage of 25 kV, an incident current of 5 nA during 480 s, the N-doped H:SiO2 films exhibited a maximum second harmonic signal in the order of 0.003 pm/V, but when irradiated with an acceleration voltage of 30 kV, at 5 nA during 240 s, the films exhibited a maximum second harmonic signal of 0.006 pm/V. With a smaller current of 0.5 nA during 25 s and 25 kV acceleration voltage, the Ge-doped H:SiO2 films (3.8 at. % Ge) showed a maximum second-order nonlinearity of 0.0005 pm/V. But an H:SiO2 films with a smaller Ge content (1.0 at. % Ge), showed a large SHG: d33=0.09 pm/V when irradiated at 25 kV, 0.5 nA during 15 s. PACS 78.66.J; 42.65.K; 68.60.D 相似文献
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The second harmonic generation (SHG) of light diffusely scattered by cold-deposited silver films is negligible with respect to the specular intensities. Therefore, a cold-deposited silver film is well approximated by a homogeneous effective medium. The intensities of SHG at 1.06 μm and the optical absorption at 0.53 μm depend on both the square of the internal effective field at 0.53 μm and a change in the same way when annealing the film. This can be understood by the assumption that SHG is also mainly following the electric field within the metal phase and surface contributions to SHG interfere destructively. This is corroborated by the observation that the SHG intensity does not show the ‘chemical first layer effects’ seen by surface-enhanced Raman scattering (SERS). 相似文献
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Radovskaya V. V. Mamonov E. A. Novikov V. B. Kopylov D. A. Kolmychek I. A. Gusev N. S. Pashen’kin I. Yu. Murzina T. V. 《Physics of the Solid State》2021,63(10):1519-1523
Physics of the Solid State - Magnetization-induced effects accompanying optical second harmonic generation (SHG) in three-layer W/Co/Pt films with different thicknesses of the cobalt layer... 相似文献