Optical properties of anatase and rutile titanium dioxide: Ab initio calculations for pure and anion-doped material

The optical properties of rutile and anatase titanium dioxide (TiO₂) are calculated from the imaginary part of the dielectric function using pseudopotential density functional method within its generalized gradient approximation (GGA) and a scissors approximation. The fundamental absorption edges calculated for the unit cell of both rutile and anatase are consistent with experimentally reported results of single crystal rutile and anatase TiO₂ and with previous theoretical calculations. A significant optical anisotropy is observed in the anatase structure which holds promise for investigating the band gap modification with better visible-light response and provides a reliable foundation for addressing the effect of impurities on the fundamental absorption edge/band gap of anatase TiO₂. Further calculations on the electronic structure and the optical properties of C-, N-, and S-doped anatase TiO₂ are performed. The results are analyzed and discussed in terms of optical anisotropy and scissors approximations.     

Many-body effects in the optical absorption of lithium azide (LiN3)

Until recently most of the understanding achieved for solid explosives has been obtained using various semi-empirical approaches due to a major role of excitonic effects in the mechanisms of decomposition. Nevertheless, during the last two decades, thanks to the ongoing progress in iterative computational methods, the inclusion of the electron-hole interaction in ab initio calculations has become a standard approach in solid-state theory. In this paper, the electronic structure and optical properties of bulk lithium azide are investigated, taking into account the electron-hole interaction via the Bethe–Salpeter equation (BSE). Here, we employ the kernel polynomial method (KPM), which significantly reduces the computational cost compared to direct diagonalization methods. The calculations of the imaginary part of the polarization dependent dielectric function including excitonic effects are reported for the first time. Then, we show a density map of the two-particle wave function and propose an alternative interpretation of the initial stages of the externally triggered chemical decomposition, based on the analysis of two-particle states near the absorption edge.     

Electronic Correlation Effects on the Optical Properties of SiC,BeO and Boron Nitride Nanotubes and Monolayers

We present numerical calculation of the impact of electron-electron interaction on the behavior of density of states and optical properties of BeO,SiC and Boron-Nitride nanotubes and sheets.Hubbard model hamiltonian is applied to describe the dynamics of electrons on the lattice structure of theses compounds.The excitation spectrum of the system in the presence of local electronic interactions has been found using mean Seld approach.We find the band gap width in both optical absorption and density of states reduces with local Hubbard electronic interaction parameter.The absorption spectra exhibits the remarkable peaks,mainly owing to the divergence behavior of density of states and excitonic effects.Also we compare optical absorption frequency behavior of BeO,SiC and Boron-Nitride nanotubes with each other.Furthermore we investigate the optical properties of BeO and SiC sheets.A novel feature of optical conductivity of these structures is the decrease of frequency gap in the optical spectrum due to electronic interaction.     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（LDA）下研究了Si纳米层厚度和O空位缺陷对Si/SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815~2.580nm的Si层厚度范围内,Si/SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si/SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小,Si/SiO2界面吸收系数产生了蓝移;O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si/SiO2界面体系的电子和光学性质,上述研究结果为Si/SiO2界面材料的设计与应用提供了一定的理论依据．     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（ LDA）下研究了Si纳米层厚度和O空位缺陷对Si／SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815～2.580nm的Si层厚度范围内, Si／SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si／SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小, Si／SiO2界面吸收系数产生了蓝移; O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si／SiO2界面体系的电子和光学性质,上述研究结果为Si／SiO2界面材料的设计与应用提供了一定的理论依据．     

Theoretical study of the molecular properties of benzyl azide, 2-, 3- and 4-methyl benzyl azide

Ab initio and density functional calculations have been performed to study the benzyl azide, 2-, 3- and 4-methyl benzyl azides. Several molecular properties, such as conformational equilibrium, optimal geometry, and vibrational frequencies, have been computed for these molecules. Ionisation energies were also computed.     

Study of the optical-electrical characteristics of InxGa1−xN alloy with low in doping

The electronic structures and optical properties of In doped GaN were calculated with different doping concentration, from first-principles using density function theory with the plane-wave ultrasoft pseudopotential method. The influence of In doping on the volume, interactions among atoms, density of states, electron density difference, and optical properties of GaN was analyzed. The results show that the interactions among atoms are reduced, band gap decreases, and absorption spectra have red shift along with the increase of In doping concentration.     

Electronic Correlation Effects on the Optical Properties of SiC,BeO and Boron Nitride Nanotubes and Monolayers

We present numerical calculation of the impact of electron-electron interaction on the behavior of density of states and optical properties of BeO, SiC and Boron-Nitride nanotubes and sheets. Hubbard model hamiltonian is applied to describe the dynamics of electrons on the lattice structure of theses compounds. The excitation spectrum of the system in the presence of local electronic interactions has been found using mean field approach. We find the band gap width in both optical absorption and density of states reduces with local Hubbard electronic interaction parameter. The absorption spectra exhibits the remarkable peaks, mainly owing to the divergence behavior of density of states and excitonic effects. Also we compare optical absorption frequency behavior of BeO, SiC and Boron-Nitride nanotubes with each other. Furthermore we investigate the optical properties of BeO and SiC sheets. A novel feature of optical conductivity of these structures is the decrease of frequency gap in the optical spectrum due to electronic interaction.     

Ab initio calculations study of the electronic, optical and thermodynamic properties of NaMgH3, for hydrogen storage

The structural stability, electronic structure, optical and thermodynamic properties of NaMgH₃ have been investigated using the density functional theory. Good agreement is obtained for the bulk crystal structure using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy. It is found from the electronic density of states (DOS) that the valence band is dominated by the hydrogen atoms while the conduction band is dominated by Na and Mg empty states. Also, the DOS reveals that NaMgH₃ is a large gap insulator with direct band gap 3.4 eV. We have investigated the optical response of NaMgH₃ in partial band to band contributions and the theoretical optical spectrum is presented and discussed in this study. Optical response calculation suggests that the imaginary part of dielectric function spectra is assigned to be the interband transition. The formation energy for NaMgH₃ is investigated along different reaction pathways. We compare and discuss our result with the measured and calculated enthalpies of formation found in the literature.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

Electronic structure and optical properties of CdWO4 with oxygen vacancy studied from first principles

The electronic structures, dielectric functions and absorption coefficient of both perfect CdWO₄ crystal (CWO) and the CWO crystal containing oxygen vacancy (CWO: V _O) have been studied using the CASTEP code with the lattice structure optimized. The calculated total density of states (TDOS) of CWO: V _O indicates that the oxygen vacancy would introduce a new electronic state within the band gap compared with that of perfect CWO. The dielectric functions are calculated since the imaginary part of the dielectric function can reduce the optical absorption of a certain crystal, and then the absorption coefficient is calculated. The calculated absorption spectra show that CWO: V _O exhibits two absorption bands in the ultraviolet and visible region, peaking at about 3.0 eV (413 nm) and 3.5 eV (354 nm), respectively, which are in agreement with the experimental results showing that the yellow CWO has two optical absorption bands in this region peaking at around 350 nm and 400 nm respectively. It can be concluded that oxygen vacancy causes these two absorption bands. The calculations also indicate that the optical properties of CWO exhibit anisotropy, and can be explained by the anisotropy of the crystal lattice.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为，得出 AlN在16.7Gpa附近存在等结构相变，即由直接带隙结构转变为间接带隙结构。同时，结合高压下的态密度分布图和能级移动情况，分析了AlN在高压下的光学性质，吸收谱有向高能端移动(蓝移) 的趋势。     

Electronic structure and optical properties of ordered compounds potassium tantalate and potassium niobate and their disordered alloys

The electronic energy band structure, site and angular momentum decomposed density of states (DOS) of cubic perovskite oxides KNbO₃ and KTaO₃ have been obtained from a first principles density functional based full potential linearized augmented plane wave (FLAPW) method within a generalized gradient approximation (GGA). The total DOS in valence region is compared with the experimental photo-emission spectra (PES). The calculated DOS is in good agreement with the experimental energy spectra and the features in the spectra are interpreted by comparison with the projected density of states (PDOS). The valence band PES is mainly composed of Nb-4d/Ta-5d and O 2p states in KNbO₃ and KTaO₃, respectively. Using the PDOS and the band structure we have analyzed the inter-band contribution to the optical properties of these materials. The real and imaginary parts of the dielectric function have been calculated and compared with experimental data. They are found to be in a reasonable agreement. The role of band structure on the optical properties have been discussed.     

层状氧化钼的电子结构、磁和光学性质第一原理研究

按照基于自旋密度泛函理论的赝势平面波第一原理计算方法,理论研究了两种层堆叠结构氧化钼(正交和单斜MoO_3)的电子结构、磁性和光学特性,探讨其作为电致变色材料或电磁材料在光电子器件中的技术应用.采用先进的半局域GGA-PW91和非局域HSE06交换相关泛函精确计算晶体结构和带隙宽度.计算得出较低密排面解离能,表明两种层状氧化钼的单片层很容易从体材料上剥落.能带结构和投影态密度分析表明:导带底和价带顶电子态主要来自于层平面方向成键的原子轨道,呈现典型的二维电子结构特征.无缺陷的MoO_3块体材料具有明显的磁矩,O空位会导致磁矩增加;由Mo原子和顶点氧原子产生的亚铁磁耦合磁矩是MoO_3层状材料磁性的主要来源;层状氧化钼在可见光区具有明显的光吸收响应,光吸收谱表现出显著的各向异性并在带电时发生明显的蓝移或形成新的低频可见光吸收峰.计算结果证明层状氧化钼具有明显的电致变色和磁控性能,为设计高性能电磁或光电子功能材料提供了理论依据和技术数据.     

Optical properties of gapped graphene structure driven by electron electron interaction

We analyze the effects of on-site electronic coulomb repulsion U on the optical absorption and density of states of a graphene like structure with two different sublattice on-site energies in the context of Hubbard model. Mean field approximation has been implemented in order to find excitation spectrum of electronic system. Antiferromagnetic long range ordering has been considered as the ground state of model Hamiltonian. We find that the band gap in both optical conductivity and density of states decreases with strength of coulombic interaction. The absorption spectra of the graphene like structure as a nanoscale system exhibit the prominent peaks, mainly owing to the divergent density of states and excitonic effects.     

A theoretical study on the electronic structure of GaAs/AlAs and AlAs/GaAs core/shell nanoparticles

Results of theoretical investigation on the structural and electronic properties of GaAs/AlAs and AlAs/GaAs core/shell nanoparticles are presented. We have considered relaxed structures of essentially spherical parts of the zinc-blende crystal structure. The electronic properties and the total energy were calculated using density-functional tight-binding method. Our results include the charge distribution, density of states (DOSs), electronic energy levels (in particular HOMO and LUMO), HOMO-LUMO gap, excitation spectra and their variation with shell thickness for both GaAs/AlAs and AlAs/GaAs core/shell systems.     

Effect of copper and cobalt impurities on the electronic structure and optical spectra of the intermetallic compound PrNi5

The electronic structure and optical properties of the intermetallic compound PrNi₅ and their evolution during the substitution of copper or cobalt atoms for nickel atoms have been investigated. The band spectra of the studied compounds have been calculated in the local spin density approximation corrected to account for strong electron-electron interactions in the 4f shell of the rare-earth ion (LSDA + U method). The dispersion relations of the optical conductivity in the interband light absorption region have been interpreted using the results of calculations of the electron density of states.     

Tight-binding studies of surface effects on electronic structure of CdSe nanocrystals: the role of organic ligands, surface reconstruction, and inorganic capping shells

We utilize a tight-binding model to study the effects of surface structure on electronic properties of CdSe clusters. The model takes into account experimental information about structure and shape of the nanocrystals, as well as the nature and distribution of capping ligands. The effects of both organic capping ligands and inorganic capping shells on the densities of states (DOS) and on the single-particle absorption spectra of the clusters are calculated for various cluster shapes and sizes, and are compared to results for clusters with truncated surfaces. For organic capping ligands, the effect of ligand hybridization is investigated and a simple model of surface reconstruction is developed. Both ligand hybridization and surface reconstruction are seen to have a major influence on the band edge electronic and optical properties. Inorganic capping shells give rise to differential localization of valence and conduction band edge states, with the hole primarily confined to the core region and the electron more evenly distributed over both core and shell. Received 21 September 1998 / Received in final form: 15 December 1998     

Electronic structure,optical dielectric constant and born effective charge of EuAlO3

EuAlO₃ (EAO) is synthesized by the sol–gel process. The Rietveld refinement of the X-ray diffraction data shows that the material has orthorhombic structure with Pbnm space group. The density functional theory calculations are initiated with the experimental lattice parameters. The full potential linearized augmented plane wave method and projector augmented wave method are used to investigate the ground state properties of EAO. An indirect band gap of 1.8 eV is observed with the valence band maximum at the Γ point and the conduction band minimum at the R point. The X-ray photoemission spectroscopy (XPS) spectra of EAO are obtained in the energy window of 0–1000 eV. Using the electronic density of states, the valence band (VB) spectrum of EAO is generated and compared with the observed VB-XPS spectrum. The optical dielectric constant and the refractive index of the material are calculated for the photon energy radiation. The optical properties show a considerable anisotropy in the material. The Born effective charge of various elements and the dielectric tensor of EAO have been calculated.     

Correlation effects on optical properties of TbOFeAs

Based on local density approximation and Hubbard-U corrections (LDA+U), we study the influence of Coulomb interaction for Tb 4f states on the optical properties of the recently discovered superconductor, such as TbOFeAs. Within the incorporation of onsite Hubbard effect in TbOFeAs, we discuss the electronic structure, as well as the optical spectra and we compared them to LDA calculations. For non-magnetic (NM) configuration, the electronic structure exhibits high density of states, N(E _F ) in the proximity of Fermi level. With and without the electronic correlation effects, we carried out the calculations for the optical properties such as the optical conductivity, joint density of states (JDOS), optical absorption, the electron energy loss function and reflectivity of TbOFeAs in a large photon energy scale of 30 eV. Despite the absence of a Mott insulator transition, we infer that the electronic correlation effects are prominent in the recently discovered superconductor, like TbOFeAs. We also predict the in-plane anisotropy of plasma frequency that has been evaluated recently in the other ReOFeAs systems.