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1.
CeCo5.4 ribbons have been prepared by melt spinning at wheel speeds v=5, 15, 25 and 35 m/s. The ribbons are essentially single 1:5 phase, and have significant crystallographic texture and magnetic anisotropy. The ribbon's longitudinal direction is easy direction, and normal to the ribbon plane direction is hard direction. For v=5 m/s [1 1 1]-axes of the grains near non-contact surface of the ribbon are normal to the ribbon plane. With increase of v, [1 1 0] and [2 0 0]-axes of the grains near non-contact surface rotate toward the normal direction and the c-axes parallel to the ribbon plane. The anisotropy increases up to v=25 m/s and then decreases. The grains near contact-wheel surface are randomly oriented for all v. The coercivity increases with increase of v due to decrease of the grain size. The values of coercivity are smaller in the easy direction and are larger in the hard direction, meaning that the coercivity mechanism is mainly characterized by domain wall pinning.  相似文献   

2.
We have studied [N(C2H5)4]2MnCl4 crystal by X-band CW EPR spectra in the temperature range 170-300 K. The angular dependences of linewidth ΔH were measured and described in the light of a double-layer system (2D) with exchange interactions. Two temperature anomalies of linewidth ΔH were found at T1=225 K and T2=192 K on cooling. Different behaviors of ΔH anomalies recorded for an external magnetic field parallel and perpendicular to the ab crystallographic plane indicate ordering/disordering of MnCl4 groups in this plane and their displacement along the c-axis which occurs in the temperature of about 225 K.  相似文献   

3.
Electronic and magnetic properties of the three magnetic-sublattice double perovskite TbCu3Mn4O12 (TCMO) are investigated by performing first-principles density-functional theory calculations. Our electronic structure calculations show that TCMO is half-metallic and its half-metallicity can only be correctly described when the electron correlation on Tb3+ 4f8 electrons are considered. The energies of different magnetic configurations among the three magnetic sublattices are also calculated, revealing that the magnetic configuration with Mn and Cu spins in the antiparallel arrangement and with the Tb magnetic moments ferromagnetically/antiferromagnetically (FM/AFM) coupled to Cu/Mn spins (that is TbCu3Mn4O12) is the lowest energetic magnetic state, which is consistent with recent experimental results. The magnetic anisotropy is further calculated for the [1 1 1], [1 1 0], and [0 0 1] spin quantization directions. It is found that the [1 1 1]-direction is more stable than the [1 1 0]- and [0 0 1]-directions by 123 and 135 meV per formula unit, respectively, indicating a significant magnetic anisotropy. Our detailed projected partial density of states analysis finally shows that Cu and Mn are antiferromagnetically coupled by superexchange interaction and Tb is expected to interact FM with A-site Cu and AFM with B-site Mn sublattices by way of 4f-2p-3d.  相似文献   

4.
We report the temperature dependence of susceptibility for various pressures, magnetic fields and constant magnetic field of 5 T with various pressures on La2−2xSr1+2xMn2O7 single crystal to understand the effectiveness of pressure and magnetic field in altering the magnetic properties. We find that the Curie temperature, Tc, increases under pressure (dTc/dP=10.9 K/GPa) and it indicates the enhancement of ferromagnetic phase under pressure up to 2 GPa. The magnetic field dependence of Tc is about 26 K for 3 T. The combined effect of pressure and constant magnetic field (5 T) shows dTc/dP=11.3 K/GPa and the peak structure is suppressed and broadened. The application of magnetic field of 5 T realizes 3D spin ordered state below Tc at atmospheric pressure. Both peak structure in χc and 3D spin ordered state are suppressed, and changes to 2D-like spin ordered state by increase of pressure. These results reveal that the pressure and the magnetic field are more competitive in altering the magnetic properties of bilayer manganite La1.25Sr1.75Mn2O7 single crystal.  相似文献   

5.
FePt films that have a high degree of order S in their L10 structure (S>0.90) and well-defined [0 0 1] crystalline growth perpendicular to the film plane were fabricated on thermally oxidized Si substrates by the addition of an oxide and successive rapid thermal annealing (RTA). The mechanism of L10 ordering and [0 0 1] crystalline growth perpendicular to the film plane arising through the oxide addition and RTA process is also discussed. The L10 ordering (S>0.90) and the [0 0 1] crystalline growth were achieved by (1) lowering the activation energy due to in-plane tensile stress and the initiation of L10 ordering at a low temperature, (2) [0 0 1] crystalline growth through in-plane tensile stress, and (3) enhancement of atomic diffusion via the addition of an oxide and the resultant lowering of the ordering temperature. Effect (1) was observed in the case of SiO2 addition, effect (2) was generally observed in the case of oxide addition and the RTA process, and effect (3) was prominent in the case of ZnO addition. With the addition of ZnO, the L10 ordering started at below 400 °C and was completed at 500 °C. Finally, dot patterns were successfully fabricated down to a diameter of 15 nm using electron beam lithography, and the magnetic state of the dot pattern was observed by magnetic force microscopy.  相似文献   

6.
M.S. Zei 《Surface science》2006,600(9):1942-1951
The growth and structures of aluminum oxides on NiAl(1 0 0) have been investigated by RHEED (reflection high energy electron diffraction), complemented by LEED (low energy electron diffraction), AES (Auger electron spectroscopy) and STM (scanning tunneling microscopy). Crystalline θ-Al2O3 phase grows through gas-phase oxidation on the NiAl(1 0 0) substrate with its a and b-axes parallel to [0 −1 0] and [0 0 1] direction of the substrate, respectively, forming a (2 × 1) unit cell. Whilst, three-dimensional nano-sized NiAl(1 0 0) protrusions and Al2O3, NiAl(0 1 1) clusters were found to co-exit at the surface, evidenced by extraordinary transmission spots superposed to the substrate reflection rods in the RHEED patterns. Particularly, the NiAl(0 1 1) clusters develop with their (0 1 1) plane parallel to the NiAl(1 0 0) surface, and [1 0 0] axis parallel to the [0 −1 1] direction of the substrate surface. STM observation combined with information from AES and TPD (temperature programmed desorption) suggest the formation of these 3D structures is closely associated with partial decomposition of the crystalline oxides during annealing. On the other hand, smoother (2 × 1) oxide islands with thickness close to a complete monolayer of θ-Al2O3 can be formed on NiAl(1 0 0) by electro-oxidation, in contrast with the large crystalline films formed by gas-oxidation.  相似文献   

7.
The structure, magnetic properties, and magnetocaloric effect of La0.7Ca0.3MnO3 ceramics with different particle sizes have been investigated. It is found that the Curie temperature increases first, and then decreases as particle size decreases and the type of magnetic phase transition changes from first-order to second-order, which may be attributed to surface pressure effects. The maximum magnetic entropy change and relative cooling power (RCP) show non-monotonic behaviors with decreasing the particle size. However, for the 3400 nm sample, the magnetic entropy change −ΔSM reaches the maximum values of 6.41 and 8.63 J/kg K for the field changes of 2.0 and 4.5 T, respectively. Furthermore, the estimated large RCP values under lower magnetic fields in La0.7Ca0.3MnO3 are comparable with those of typical magnetic refrigerant materials in the corresponding temperature range, suggesting those compounds might be promising candidates for magnetic refrigeration.  相似文献   

8.
We report the low temperature magnetization and specific heat of single-crystal Pr5Si3 at ambient pressure under magnetic field up to 9 T and temperatures down to 3 K. Pr5Si3 orders ferromagnetically below . The ferromagnetic state is strongly anisotropic where the basal plane in the body-centered tetragonal crystal structure is the easy-magnetic plane. Under hydrostatic pressures up to 18 kbar the magnetization for temperatures down to 3 K and magnetic fields up to 9 T shows only a weak variation of the ordered moment and TC. Magnetization loops at low magnetic fields show changes of the hysteresis loops, notably the emergence of shoulder at the coercive field, that are characteristic of a ferrimagnetic modulation that is stabilized under pressure.  相似文献   

9.
The orthorhombic Sm5Ge4-type Tb2Ti3Ge4 shows square modulated non-collinear magnetic ordering with wave vector K=[±1/3, 1/2, 1/2] at 2 K. The terbium magnetic moments lie in the bc plane and magnetic moment value of 7.5(2) μB/Tb is obtained at 2 K.  相似文献   

10.
Thermally evaporated Bi2Te3 thin films were deposited on glass substrates. X-ray diffraction study confirmed that the growned films are polycrystalline in nature having hexagonal structure. The film exhibits preferential orientation along the [0 1 5] direction for the films of all thickness together with other abundant planes [0 1 1 1] and [1 1 0]. Various structural parameters such as lattice constants, crystallite size, strain, and dislocation density have been calculated and they are found to be thickness dependent. The lattice parameters are found to be a=4.38 Å and c=30.40 Å. The grain size of the films increases with thickness as the dislocation density and the microstrain decreases with thickness. The mean bond energy and the average coordination number of Bi2Te3 thin film are found to be 1.72 eV and 2.4, respectively.  相似文献   

11.
The dielectric properties of the [4-NH2C5H4NH] SbCl4 (abbreviated as 4-APCA) crystal were investigated under hydrostatic pressure up to 300 Mpa. The pressure-temperature phase diagram was given. The paraelectric-ferroelectric phase transition (II→III) temperature (Tc) increases linearly with increasing pressure with a slope dTc/dp=21×10−2 K/MPa. The pressure dependence of Curie-Weiss constants has been evaluated also. In the paraelectric phase (II) the Curie constant (C+) was pressure dependent whereas the C constant over the ferroelectric phase (III) was almost constant. The results are interpreted in terms of improper and displacive type phase transition model with a soft phonon at a zone boundary.  相似文献   

12.
The effect of Ba(La)TiO3 doping on the structure and magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/xBa(La)TiO3 (x=0.0, 1.0, 5.0 mol%) have been investigated. The X-ray diffraction patterns and microstructural analysis show that BaTiO3 and LSMO phases exist independently in BaTiO3-doped composites. The metal-insulator transition temperature (TMI) decreases whereas the maximum resistivity increases very quickly by the increase of BaTiO3 doping level. The partial substitution of Ba by La(0.35 mol%) results in a decrease in resistivity of LSMO/xBa(La)TiO3 composites. Magnetoresistance of BaTiO3-doped composites decreases monotonously in the temperature range 200-400 K in a magnetic field of 5 T, which is completely different from that of LSMO compound. The value of MR decreases at low field (H<1 T) and increases at high fields (H>1 T) with increasing the BaTiO3 doping level at low temperatures below 280 K. These investigations reveal that the magnetotransport properties of LSMO/xBa(La)TiO3 composites are dominated by spin-dependent scattering and tunneling effect at the LSMO/BaTiO3/LSMO magnetic tunnel junction.  相似文献   

13.
We have studied the magnetocaloric effect (MCE) in a bilayered La4/3Sr5/3Mn2O7 single crystal with applied field along both ab-plane and c-direction. Due to the quasi-two-dimensional structure, the crystal exhibits a strong anisotropy in the MCE. The difference of magnetic entropy change between two crystallographic directions depends on external magnetic fields and has a maximum of 2 J/kg K. A large low-field magnetic entropy change, reaching 3.2 J/kg K for a magnetic field change of 15 kOe, is observed when the applied field is along ab-plane. This large low-field magnetic entropy change is attributed to the rapid change of magnetization in response to external magnetic fields in the easy magnetizing plane.  相似文献   

14.
The Er5Ge3 compound (Mn5Si3-type, hP16, P63/mcm) at 4 K shows magnetic ordering of the antiferromagnetic type. Its magnetic structure consists of sine modulated collinear magnetic moments of Er that are parallel to the c axis (with a propagation vector k=[0 0 ±0.3]). This corresponds to the magnetic unit cell (a a 10c), the values of the magnetic moment of the Er atoms being, as a general formula, MzM0 cos [2π(Z–1/4)(1–kZ)], with M0=9.2(2) μB at 4 K.  相似文献   

15.
Anisotropic magnetic properties of single crystalline RAu2Ge2 (R=La, Ce and Pr) compounds are reported. LaAu2Ge2 exhibits a Pauli-paramagnetic behaviour whereas CeAu2Ge2 and PrAu2Ge2 show an antiferromagnetic ordering with Nèel temperatures TN = 13.5 and 9 K, respectively. The anisotropic magnetic response of Ce and Pr compounds establishes [0 0 1] as the easy axis of magnetization and a sharp spin-flip type metamagnetic transition is observed in the magnetic isotherms with H // [0 0 1]. The transport and magnetotransport behaviour of these compounds, in particular LaAu2Ge2, indicate an anisotropic Fermi surface. The magnetoresistivity of CeAu2Ge2 apparently reveals the presence of a residual Kondo interaction. A crystal electric field analysis of the anisotropic susceptibility in conjunction with the experimentally inferred Schottky heat capacity enables us to propose a crystal electric field level scheme for Ce and Pr compounds. For CeAu2Ge2 our values are in excellent agreement with the previous reports on neutron diffraction. The heat capacity data in LaAu2Ge2 show clearly the existence of Einstein contribution to the heat capacity.  相似文献   

16.
In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, TC increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition Ts and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and Ts is ∼91 K.  相似文献   

17.
The AFMR spectra of the NdFe3(BO3)4 crystal are measured in a wide range of frequencies and temperatures. It is found that by the type of its magnetic anisotropy the compound is an “easy-plane” antiferromagnet with a weak anisotropy in the basal plane. The effective magnetic parameters are determined: anisotropy fields Ha1=1.14 kOe and Ha2=60 kOe and magnetic excitation gaps Δν1=101.9 GHz and Δν2=23.8 GHz. It is shown that commensurate-incommensurate phase transition causes a shift in resonance field and a considerable change in absorption line width.At temperatures below 4.2 K nonlinear regimes of AFMR excitation at low microwave power levels are observed.  相似文献   

18.
Magnetic and transport properties of (La0.7Pb0.3MnO3)1−xAgx composites are explored in this study. Ferromagnetism is gradually attenuated due to the magnetic dilution with increase of Ag content percentage. Clearly irreversible behavior in the zero-field cooling and field cooling curves at a low field caused by the competition between the magnetization and magnetic domain orientation processes has been observed as x increases. Saturation magnetization decreases as x increases, while ferromagnetic transition temperature remains around 346 K for all composites. The resistivity decreases significantly for (La0.7Pb0.3MnO3)1−xAgx composites. It is suggested that introduction of Ag into the niche of grain boundaries forms artificial conducting network and improves the carriers to transport. However, enhancement of magnetoresistance has been observed for the system.  相似文献   

19.
Tb0.75Y0.25Co3B2 was studied as a function of temperature by neutron powder diffraction, ac susceptibility and SQUID magnetization measurements. The solid solution, which is of hexagonal symmetry and is paramagnetic at 300 K, undergoes a magnetic Co–Co ordering transition at ∼150 K, and a second magnetic Tb–Tb ordering transition at ∼17 K. The latter induces a spin-reorientation transition, in which the magnetic axis rotates from the c-axis toward the basal plane. The component of the magnetic axis, which is perpendicular to c, leads to a crystal symmetry reduction from hexagonal to monoclinic. The observed magnitude of the magnetic moment of the Tb ion is 1.5 μB, unusually small relative to the free ion and parent compound (TbCo3B2) values. These magnetic and crystal properties are discussed and compared with what was previously published for the parent compound.  相似文献   

20.
We oxidized a Ni/Au metal bi-layer contact fabricated on HVPE Al0.18Ga0.82N from 373 K to 573 K in 100 K steps. In the range 1 kHz to 2 MHz, the Capacitance–Voltage–Frequency (C–V–f) measurements reveal a frequency dispersion of the capacitance and the presence of an anomalous peak at 0.4 V owing to the presence of interface states in the as deposited contact system. The dispersion was progressively removed by O2 anneals from temperatures as low as 373 K. These changes are accompanied by an improvement in the overall quality of the Schottky system: the ideality factor, n, improves from 2.09 to 1.26; the Schottky barrier height (SBH), determined by the Norde [1] method, increases from 0.72 eV to 1.54 eV. From the Nicollian and Goetzberger model [2], we calculated the energy distribution of the density of interface states, NSS. Around 1 eV above the Al0.18Ga0.82N valence band, NSS, decreases from 2.3×1012 eV−1 cm−2 for the un-annealed diodes to 1.3×1012 eV−1 cm−2 after the 573 K anneal. Our results suggest the formation of an insulating NiO leading to a MIS structure for the oxidized Au/Ni/Al0.18Ga0.82N contact.  相似文献   

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