在高密度下核物质的色超导性

建立了相变热力学理论和场论的关系. 强调在量子场论中必须引进序参量场， 则相变的讨论就类似于Goldstone bosons 的产生. 如果只讨论一级相变， Goldstone bosons场就足够了; 如果要讨论二级相变， 则必须讨论一系列的场， 这些场构成一个对称群的表示. 另外, 也将这一思想用到色超导中. In this paper we built a relation between the thermodynamical theory of the phase transition and field theory. We emphasized that in the quantum field theory we have to introduce the order parameter fields. Then the discussion of the phase transition is closed to the creation of the Goldstone bosons. If we only discuss the first order transition, the Goldstone bosons fields are sufficient. If we want to discuss the second order transition, we have to discuss a set of fields that constructs a representation of a symmetry group. We also apply this concept to color superconductivity.     

Rashba electron transport in one-dimensional quantum waveguides

The properties of Rashba wave function in the planar one-dimensional waveguide are studied, and the following results are obtained. Due to the Rashba effect, the plane waves of electron with the energy E divide into two kinds of waves with the wave vectors k 1 =k 0 +k δ and k 2 =k 0 -k δ , where k δ is proportional to the Rashba coefficient, and their spin orientations are +π/2 (spin up) and -π/2 (spin down) with respect to the circuit, respectively. If there is gate or ferromagnetic contact in the circuit, the Rashba wave function becomes standing wave form exp(±ik δ l)sin[k 0 (l-L)], where L is the position coordinate of the gate or contact. Unlike the electron without considering the spin, the phase of the Rashba plane or standing wave function depends on the direction angle θ of the circuit. The travel velocity of the Rashba waves with the wave vector k 1 or k 2 are the same hk0/m * . The boundary conditions of the Rashba wave functions at the intersection of circuits are given from the continuity of wave functions and the conservation of current density. Using the boundary conditions of Rashba wave functions we study the transmission and reflection probabilities of Rashba electron moving in several structures, and find the interference effects of the two Rashba waves with different wave vectors caused by ferromagnetic contact or the gate. Lastly we derive the general theory of multiple branches structure. The theory can be used to design various spin polarized devices.     

Microscopic Theory of Blue Phases Ⅰ and Ⅱ of Liquid Crystal

The microscopic theory of the blue phases of chiral liquid crystal is proposed. Beginning with the potential between two molecules, by using the cell model of liquid, applying statistical physical method, the distribution function and the free energy of the system are obtained. By using variational approach and zero-order approximation, the differential equation that the order parameter tensor of the blue phase can satisfy is obtained. Then we change the differential equation to the eigenequation problem in quantum mechanics. Considering the symmetry of the blue phases, the order parameter tensors of blue phases Ⅰ and Ⅱ can be made up of the eigenvectors. Our results are the same as the results of Ginzberg-Landau‘s phenomenological theory. The parameters in the order parameter tensors that we calculate in the located system are close to the predecessors‘ results.     

Microscopic Theory of Blue Phases Ⅰ and Ⅱ of Liquid Crystal

The microscopic theory of the blue phases of chiral liquid crystal is proposed. Beginning with the potential between two molecules, by using the cell model of liquid, applying statistical physical method, the distribution function and the free energy of the system are obtained. By using variational approach and zero-order approximation, the differential equation that the order parameter tensor of the blue phase can satisfy is obtained. Then we change the differential equation to the eigenequation problem in quantum mechanics. Considering the symmetry of the blue phases,the order parameter tensors of blue phases Ⅰ and Ⅱ can be made up of the eigenvectors. Our results are the same as the results of Ginzberg-Landau‘s phenomenological theory. The parameters in the order parameter tensors that we calculate in the located system are close to the predecessors‘ results.     

A Direct Calculation of First-Order Wave Function of Helium

We develop a simple analytic calculation for the first order wave function of helium in a model in which nuclear charge screening is caused by repulsive coulomb interaction. The perturbation term, first-order correlation energy, and first-order wave function are divided into two components, one component associated with the repulsive coulomb interaction and the other proportional to magnetic shielding. The resulting first-order wave functions are applied to calculate second-order energies within the model. We find that the second-order energies are independent of the nuclear charge screening constant in the unperturbed Hamiltonian with a central coulomb potential.     

Exact Solution of D-Dimensional Klein-Gordon Oscillator with Minimal Length

Specific modifications of the usual canonical commutation relations between position and momentum operators have been proposed in the literature in order to implement the idea of the existence of a minimal observable length. Here, we study a consequence of this proposal in relativistic quantum mechanics by solving in the momentum space representation the Klein-Gordon oscillator in arbitrary dimensions. The exact bound states spectrum and the corresponding momentum space wave function are obtained. Following Chang et al, （Phys. Rev. D 65 （2002） 125027）, we discuss constraint that can be placed on the minimal length by measuring the energy levels of an electron in a penning trap.     

The First Principle Formula of the Relativistic Heat Conductivity of Coulomb Electronic Plasmas

Making use of the relativistic BBGKY technique,the relativistic generalization of Landau collision integral is botained.Furthermore,we calculate the relativistic hydrodynamic modes up to the second order in the hydrodynamic wave number.Combining Resibois‘ method,we present the first principle formula of the relativistic heat conductivity of Coulumb electronic plasmas for low-order corrections.     

数值求解三维含时Schrodinger方程及其应用

发展了一套高精度、高效率的伪谱方法,以非微扰的方式求解真实原子三维含时Schrodinger方程.该方法选用二阶劈裂算符作为时间演化算子,分别选择能谱表象和坐标表象作为含时波函数演化的两个表象.在坐标表象下波函数的径向部分使用库仑波函数离散变量表象来离散;角向波函数展开在两维的Gauss-Legendre-Fourier格点上.以H原子的光激发和光电离过程为例,进行了数值计算并和解析解进行了比对.结果表明二者符合很好.该方法很好地处理了库仑奇点问题.还计算了强激光辐照H原子的多光子电离过程,并和其他的数值方案进行了比较.结果表明,在计算收敛的前提下本方法计算效率更高.

Abstract：

We present an accurate and effective pseudospectral method for solving the three-dimensional time-dependent Schrodinger equation involving the Coulomb potential. In this method, the Hamiltonian is evaluated by exploiting the two representations of the wave function. One is a grid representation, in which the angular dependence of the wave function is expanded in a two-dimensional Gauss-Legendre-Fourier grid in the coordinate space of polar and azimuthal angles. The radial coordinate is discretized using a discrete variable representation constructed from the Coulomb wave function (CWDVR) . The other is a spectral representation, in which the wave function is expanded in a set of square integrable functions chosen as the eigenfunctions of a zero-order Hamiltonian. The time of propagation of the wave function is calculated using the well-known second-order split-operator method implemented through the transform between the grid and spectral representations. Calculations on the photo-absorption strength of hydrogen atom are presented to demonstrate the accuracy of present method in low energy limit by the time-dependent wave-packet propagation method. As another example, the present method is applied to multiphoton ionization of H atom. For a wide range of field parameters, ionization rates calculated using the present method are in excellent agreement with those from other accurate numerical calculations. The new algorithm will be found more efficient than the close coupled wave packet method using CWDVR and/or methods based on evenly spaced grids.     

新型蓝紫光荧光分子N2-烷基-1,2,3-三氮唑的光谱性质

采用对甲苯磺酸催化合成N¹-烷基-1,2,3-三氮唑和N²-烷基-1,2,3-三氮唑。两种产物均有紫外吸收,但只有N²-烷基-1,2,3-三氮唑有荧光。研究了在N²位和C⁴位引入不同取代基后化合物的紫外可见吸收光谱和荧光激发发射光谱。结果表明,N²位是甲苯基或C⁴位是吸电子取代基的荧光强度最高,荧光量子产率高达79%,调节C⁴位取代基可以更好地提升荧光性能（荧光发射波长300~440 nm,Stokes位移49~70 nm）。N²-烷基-1,2,3-三氮唑良好的蓝紫光荧光性能使其具有潜在应用价值。     

正负电子湮灭过程的核子激发态N*产生(英文)

目前,正负电子湮灭过程的核子激发态N*产生的实验数据主要来自于粲偶素能区。粲偶素衰变到核子激发态过程类似于其类时电磁形状因子测量过程,正反粲夸克短程湮灭提供了近乎于点源的胶子强子化过程。与γN,eN,πN反应互补,这一新的N*产生源具有同位旋和低自旋筛选的优势。综述了正负电子湮灭过程的核子激发态N*产生的实验情况和相关的唯象进展,同时讨论未来发展的一些新方向,如正负电子湮灭过程的核子激发态N*产物的一些新来源等。Up to now, the N* production from e+e- annihilations has been studied only around charmonium region. Charmonium decays to N*s are analogous to (time-like) EM form factors in that the charm quark annihilation provides a nearly pointlike (ggg) current. Complementary to other sources, such as πN, eN and γN reactions, this new source for N* spectroscopy has a few advantages, such as an isospin filter and a low spin filter. The experimental results on N* from e+e- annihilations and their phenomenological implications are reviewed. Possible new sources on N* production from e+e- annihilations are discussed.     

Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III-V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N⁺-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N⁺-GaAs layer, up to 2×10¹⁹ cm^-3. A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.     

宏观放电参数对快原子态氮(N+,Nf)的影响

采用氮直流辉光放电等离子体中快电子和重粒子(N₂⁺,N⁺,N_f)混合的蒙特卡罗方法,模拟研究了快原子态粒子(N⁺,N_f)的产生率及轰击阴极的能量分布随宏观放电参数(P,V)的变化规律.结果表明,存在一最佳放电条件,使阴极壁处粒子(N⁺,N_f)的粒子数密度大且能量高;当电压大于800V时,轰击阴极的活性粒子(N⁺,N_f),主要由N₂⁺-N₂离解过程产生,电压小于300V时,主要由e^--N₂离解过程产生,模拟结果与实验结果相符合.     

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

The product of the cutoff frequency and breakdown voltage( fT×BVCEO) is an important figure of merit(FOM) to characterize overall performance of heterojunction bipolar transistor(HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator(SOI) Si Ge HBT to simultaneously improve the FOM of fT×BVCEOand thermal stability is presented by using two-dimensional(2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness(TBOX) on fT, BVCEO, and the FOM of fT×BVCEOare presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEOto some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT,BVCEO, and the FOM of fT×BVCEOcan be improved by increasing SOI insulator Si O_2 layer thickness TBOXin SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of Si O_2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEOis improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer into collector region provides an effective method to improve SOI Si Ge HBT overall performance.     

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N2-Ar射频放电等离子体广泛应用于微电子工业的刻蚀、氮化物薄膜的制备及金属表面氮化等技术领域。开发了N2-Ar混合气体容性耦合射频放电PIC/MC自洽模型,模型主要描述了e-,N2+,N+,Ar+等主要带电粒子的行为分布。等离子体的碰撞过程分别考虑了带电粒子(e-,N2+,N+,Ar+)与基态中性N2分子和Ar原子的21种碰撞反应过程。模拟结果表明,在纯N2及N2-Ar混合气体容性耦合射频放电中,各种带电粒子的数密度都在等离子体区达到最大值,且氮分子离子为主要粒子;在N2容性耦合射频放电中,加入10%氩气时,N+平均能量有所增加,在射频电极处两种氮离子(N2+,N+)高能粒子所占比例增加。本研究对认识N2-Ar射频放电等离子体过程微观机理具重要意义。     

Effects of bag surface motion with relativistic kinematics

Radial surface motion of the baryon bag is carried out in a model with relativistic kinematics, with confinement the result of volume energy and surface tension and the pion field coupled to the bag surface. We calculate radial wave functions for the nucleon, the Δ(1233) and the Roper resonance N^*(1450), which is identified as the first radial excitation of the nucleon.

Results are used to calculate form factors and pionic decay widths of the baryons examined. The approximations made in these calculations are discussed in extensio.     

UL(N) x UR(N)-Invariant Four-Fermion Interactions and Nambu-Goldstone Mechanism at Finite Temperature

In a chiral U_L(N) x U_R(N) fermion model of NJL-form, we prove that, if all the fermions are assumed to have equal masses and equal chemical potentials, then at the finite temperature T below the symmetry restoration temperature T_c, there will be N² massive scalar composite particles and N² massless pseudoscalar composite particles (Nambu-Goldstone bosons). This shows that the Goldstone theorem at finite temperature for spontaneous symmetry breaking U_L(N) x U_R(N) → U_L+R(N) is valid and consistent with the real-time formalism of thermal field theory in this model.