Comparison of Secondary Ion Emissions from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

The emission yields of H, H2, H3 and heavy ions from carbon nanotubes under bombardments of Si and Si2 clusters in an energy range of 0.3-3 MeV per atom are measured by using the time-of-flight technique (TOF). The emission yields of the secondary ions increase with increasing energy of Si and the electronic stopping processes play an important role. The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.     

加速器束流脉冲化及氢二次离子发射研究

详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用. 利用飞行时间法研究了碳纳米管在不同能量的Si和Si2团簇离子轰击下氢二次离子的发射. 实验结果表明， 在每个原子质量单位的速度为2.5×108 cm/s以上， Si和Si2离子引起的氢二次离子的发射主要受电子阻止过程控制； 在每个原子质量单位的速度为2.5×108 cm/s以下和Si2团簇离子轰击的情况下， 氢二次离子的发射产额明显增加， 团簇离子在靶表面的核能损增强效应起主要作用. The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight(TOF ) setup is described. Secondary ion emissions from carbon nanotubes under bombardments of MeV Si and Si2 clusters are measured by using TOF. The measurements indicate that the yield of the secondary ion emissions of hydrogen increases with increasing energy of Si and it is attributed to the electronic processes. The yield of the secondary ions of hydrogen decreases with increasing energy of Si2 clusters and the enhancement of nuclear energy loss of cluster constituents at the surface of sample plays a more significant role in the secondary ion emission of hydrogen at the low energies.     

强流电子束入射弯曲宏观石英管的导向效应研究

研究了强流（~129 nA）、 高能（1 500～1 900 eV）电子束在大角度(9°)弯曲宏观石英管中的导向效应。 实验分别测量了入射流强及能量对出射电子角分布值（FWHM）和传输效率的影响。 实验观察到出射电子角分布FWHM随着入射电子流强和入射电子能量增加变化均不明显; 发现电子传输效率随入射流强增加而增加, 但随入射能量增加而减小, 这与高电荷态离子导向中离子传输效率随入射能量增加而增加的现象相反。 分析发现, 与高电荷态离子导向机制不同, 电子束导向并非是由电子在石英管内壁的自组织充电过程引起的, 而是入射电子与管内壁弹性和非弹性散射碰撞共同作用的结果。 By using an incident electron beam with the high current and high energy, the guiding effect of the bended macroscopic quartz tube for the electron beam has been investigated. The angular distributions of outgoing electrons depending on the current and energy of incident electrons were measured. The dependences of electron transmitted fraction on energy and current of incident electrons are also shown. As the incident electron energy increasing, the electron transmitted fraction increases, but it decreases while the incident electron current increasing. The results have been compared with the present data. This work presents, the process of guiding electrons is essentially different from that of guiding highly charged ions, the guiding electron beam was caused by both elastic and inelastic collisions between electrons and inner walls of quartz tube, rather than self organized charging effect on the surface of inner wall of quartz tube.     

Kr L X-ray and Au M X-ray emission for 1.5 MeV–3.9 MeV Kr~(13+) ions impacting on an Au target

Kr L X-ray and Au M X-ray emission for Kr13＋ ions with energies of 1.5 MeV and 3.9 MeV impacting on an Au target are investigated at heavy ion research facility in Lanzhou （HIRFL）. The L-shell X-ray yield per ion of Kr is measured as a function of incident energy. In addition, Kr L X-ray production cross section is extracted from the yield and compared with the result obtained from the classical binary-encounter approximation （BEA） model. Furthermore, the intensity ratio of the Au M/33 to Ma1 X-ray is investigated as a function of incident energy.     

200 nm-1000 nm spectra of light emitted in the impact of ~(40)Ar~(10+) upon Al and Si solid surfaces

This paper reports the measured results of the 200 nm-1000 nm characteristic spectral lines of Al, Si and Ar atoms when highly charged ions 40Ar10+ are incident upon Al and P-type Si surfaces. The ion 40Ar10+ is provided by the ECR ion source of the National Laboratory of the Heavy Ion Accelerator in Lanzhou. The results show that when the low-speed ions in the highly charged state interact with the solid surfaces, the characteristic spectral lines of the target atoms and ions spurted from the surfaces can be effectively excited. Moreover, because of the competition of the non-radiation de-excitation of the hollow atom by emitting secondary electrons with the de-excitation process by radiating photons, the spectral intensity of the characteristic spectral lines of Ar atoms on the P-type Si surface is, as a whole, greater than that of Ar atoms on the Al surface.     

260～520 keV Krq+ (8≤q≤17)离子轰击Al靶产生的可见光辐射

低速高电荷态离子与金属表面相互作用,原子从靶材表面溅射,其中一部分处于激发态的溅射原子通过辐射退激产生可见光。在这一相互作用过程中,低速高电荷态离子从靶材表面捕获一个或多个电子进入其激发态,这些处于激发态的入射离子也会通过辐射退激产生可见光。研究表明,离子在靶材中的核阻止本领与溅射原子产额密切相关。为了更好地理解溅射原子的激发过程,认识低速高电荷态离子与金属相互作用过程中,溅射原子的激发概率与入射离子动能和势能之间的关联,研究了260～520 keV Krq+ (8≤q≤17)离子与Al靶相互作用过程中的可见光发射。给出了520 keV Kr13+ 与Al表面相互作用过程中,发射300～550 nm波长范围的发射光谱。实验结果包括溅射的Al原子在309.0和395.9 nm处的共振跃迁,Al+和Al2+分别在358.3和451.6 nm处的共振跃迁,以及Kr+在430.0,434.1,465.8和486.0 nm处的共振跃迁。还给出了谱线强度比值Y(309.0)/Y(395.9),Y(358.5)/Y(395.9),Y(452.8)/Y(395.9)随入射离子动能和势能的变化。结果表明：谱线强度比值均随入射离子动能的增加而增大,而比值Y(309.0)/Y(395.9)随势能的增加而减小。分析表明,在低速高电荷态离子与Al靶相互作用过程中,动能（电子阻止本领）和势能共同作用导致Al原子的激发,与激发态Al(4s)相比,电子布居较高激发态Al(3d)的概率随着离子电子阻止本领的增加而增大,而随着离子势能增加而减小。在低速高电荷态离子与金属表面相互作用过程中,入射离子在靶材中的核阻止本领影响溅射原子产额,而电子阻止本领与激发概率相关。在这一作用过程中,动能和势能共同决定溅射原子的激发概率,当动能和势能在同一数量级时,动能作用比势能作用小两个量级。     

Photoluminescence from Er3+ ion and SnO2 nanocrystal co-doped silica thin films

Er3+ ions embedded in silica thin films co-doped by SnO2 nanocrystals are fabricated by sol-gel and spin coating methods. Uniformly distributed 4-nm SnO2 nanocrystals are fabricated, and the nanocrystals showed tetragonal rutile crystalline structures confirmed by transmission electron microscope and X-ray diffraction measurements. A strong characteristic emission located at 1.54 μm from the Er3+ ions is identified, and the influences of Sn doping concentrations on photoluminescence properties are systematically evaluated. The emission at 1.54 μm from Er3+ ions is enhanced by more than three orders of magnitude, which can be attributed to the effective energy transfer from the defect states of SnO 2 nanocrystals to nearby Er3+ ions, as revealed by the selective excitation experiments.     

载能团簇离子在物质中的能量损失

实验表明,团簇离子在物质中的能量损失并不等于各成分单独作用的总和,而是具有非线性效应．这种非线性效应与团簇离子的能量、团簇的种类和大小、团簇成分之间的空间关联程度以及作用物质的结构有关．对团簇作用的非线性效应研究对于了解团簇与物质相互作用的机制具有非常重要的理论意义．MeV能区的团簇离子在物质中的非线性电子能损和核能损方面的直接实验数据还相当缺乏,其理论模型也更待建立．评述了载能团簇离子在物质中的能量损失及测量方法．Fast ions deposit energy in matter through electronic and nuclear collision processes. The relaxation of the deposited energy induces emission of photons, electrons, ions, and neutral species from the target. Comparing with single incident ion, cluster induces many new phenomena: such as non-linear energy loss, non-linear emission of secondary ions, production of giant tracks and craters in various irradiated materials. These new phenomena induced by clusters are attributed to the vicinage effect ......     

Slow highly charged ion O4+ induced electron emission from clean solid surfaces

The total electron emission yields following the interaction of slow highly charged ions (SHCI) O⁴⁺ with different material surfaces (W, Au, Si and SiO₂) have been measured. It is found that the electron emission yield γ increases proportionally with the projectile velocity v ranging from 5.36×10⁵m/s to 10.7× 10⁵m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship γ(Au)>γ(Si)>γ(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies.     

Electron-impact ionization cross section calculations for lithium-like ions

The electron-impact ionization of lithium-like ions C³⁺,N⁴⁺,O⁵⁺,Ne⁷⁺,and Fe2³⁺is studied using a combination of two-potential distorted-wave and R-matrix methods with a relativistic correction.Total cross sections are computed for incident energies from 1 to 10 times of ionization energy and better agreements with the experimental results are obtained in comparison with the theoretical data available.It is found that the indirect ionization processes become significant for the incident energy larger than about four times of the ionization energy.Contributions from the exchange effects along the isoelectronic sequence are also discussed and found to be important.The present method can be used to obtain systematic ionization cross sections for highly charged ions across a wide incident energy range.     

129Xe30+与Au作用激发的Au M-X射线 与Xe L-X射线

探测了动能为1.0——7.0 MeV的¹²⁹Xe³⁰⁺ 入射Au表面产生的X射线谱. 实验结果表明, 入射离子动能较高时, 不仅激发出很强的Au的M-X射线, 还激发出了Xe的L-X射线, 且X射线产额与入射离子动能有强相关性. 分析了X射线产额与入射离子动能的关系.     

不同动能的~(129)Xe~(26+)与Au表面作用产生的X射线谱

测量了动能为350—600 keV和1.8—3.9 MeV的129Xe26+入射Au表面产生的X射线谱.结果表明,350—600 keV的Xe26+仅激发出了Au的Mα特征X射线,而1.8—3.9 MeV的Xe26+可激发出Au的Mζ,Mα,Mγ和Mδ特征X射线.分析了X射线强度和产额比与入射离子动能的关系,并估计了Xe26+激发Xe的L-X射线的动能阈值.     

H+和Ar11+激发Si的K壳层X射线发射研究

测量了50–250 keV H⁺和1.0–3.0 MeV Ar¹¹⁺ 轰击Si表面过程中辐射的X射线. 结果表明, 在Ar¹¹⁺入射的情况下, 引起了Si的L壳层上3, 4个电子的多电离.计算了Si的K壳层X射线产生截面, 并将两体碰撞近似(BEA), 平面波恩近似, ECPSSR理论计算与实验值进行了对比. ECPSSR理论与质子产生的截面数据能够很好地符合; 而考虑多电离后, BEA理论与Ar¹¹⁺的实验结果符合较好. 关键词： X射线 高电荷态重离子 多电离     

Eu$lt;sup$gt;20+$lt;/sup$gt;入射Au靶发射Eu L-X射线产额与动能的相关性

探测了动能为3.0–6.0 MeV的Eu²⁰⁺离子入射Au靶激发Eu的L-X射线谱,获得了射线产额与离子入射动能的实验关系. 采用有心保守力作用下的两体碰撞模型,并考虑了离子的能损,计算了Eu离子与Au 原子碰撞过程中单离子L壳层空穴的产额. 根据离子L 壳层空穴退激的荧光产额,给出了碰撞过程Eu单离子L-X 射线产额与离子入射动能的理论关系. 结果表明,射线产额的理论值与实验数据符合得较好. 关键词： 离子动能 荧光产额 单离子X射线产额     

高电荷态离子与Si(110)晶面碰撞的沟道效应研究

不同电荷态低速离子(Ar^q+,Pb^q+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应. 关键词： 高电荷态离子 溅射 沟道效应     

50~250 keV质子入射SiC和Si靶时的电子发射特性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量范围为50~250 keV 的质子入射碳化硅靶和硅靶表面的电子发射产额。实验结果发现,两种半导体靶材的电子发射产额随质子入射能量变化趋势均与作用过程中电子能损随质子入射能量的变化趋势相似。通过分析电子发射的能量来源,发现实验中电子发射产额主要由动能电子发射产额贡献,势能电子发射产额可以忽略不计。两种靶材的电子发射产额均近似地正比于质子入射靶材过程中的电子能损,比例系数B随入射能量略有变化。     

The characteristic spectral lines of target atoms in the impact of ~(40)Ar~(q+) ions on metal surfaces

1 Introduction It has been found that a large number of ions and atoms can be sputtered; and elec-trons and X-ray can be emitted in the impact of slow highly charged ions (SHCI) onmetal surfaces. It has also been shown that a slow highly charged ion can deposit anamount of potential energy ranging from tens to hundreds of keV within a nanometer-sized volume on femtosecond time scale during impinging on a solid surface. Theequivalent power density is about 1014 W/cm2 and bombardment craters …     

质子轰击钨靶表面时的电子发射产额与靶温度的相关性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量为50~250 keV 的质子入射不同温度下钨靶表面的电子发射产额。实验结果发现,不同能量的质子引起的电子发射产额均随着靶温度的升高而降低;利用功函数对温度的依赖性定性地解释了该结果。在不同靶温度下,总电子发射产额与电子能损的比值随着质子能量的增加而逐渐变小;利用靶原子不同壳层中电子之间的电离竞争机制来解释实验结果。