多弧离子镀工艺对TiN/Ti与Cr/Cu界面及微结构的影响

用多弧离子镀技术在铜基上电镀Cr/Ni层进行不同工艺条件下多弧离子沉积TiN/Ti实验.借助X射线衍射(XRD)和扫描电子显微镜(SEM)研究了TiN/Ti与Cr/Cu接触界面形成、微结构及其组分与形貌.XRD分析显示,薄膜表面组分包含TiN,Ti₂N多晶相外,还包含一些Cr-Ti的金属间化合物等.显然,TiN,Ti₂N在表面上已形成.SEM观察指出,在90℃制备的表面膜具有不平整的类枝状结晶结构.随着温度升高至170℃,得到精细TiN/Ti覆盖层表面,XRD峰 关键词： 多弧离子镀 氮化钛 界面形成 微结构     

用多弧离子镀设备在锌铝合金锁具上镀氮化钛工艺

随着近几年装饰行业的逐渐兴起,对镀膜设备和镀膜产品的要求也越来越高,以往通常采用小多弧离子镀膜机用作装饰镀氮化钛,且基体材料绝大多数为不锈钢,这样的产品就有很大的局限性。我们采用自行研制和开发的旋转磁控多弧离子镀膜机,成功地完成了在锌铝合金锁具上镀氮化钛的工艺。锌铝合金压铸出来的锁具由于其熔化温度低（200℃左右）、气孔多等特点,对镀膜十分不利,但由于其成本低,易于成形而倍受用户的青睐。所以我们开发出的这套工艺,一定会有很好的市场前景。     

多弧离子镀技术中的真空放电过程

多弧离子镀技术是基于阴极弧光放电原理的一种新型真空沉积技术，文章对该技术的特点，发展现状及其应用情况作了简单介绍，着重分析了该技术中真空弧光放电的过程并提出了放电的热－场致电子发射模型，在此基础上给出了稳定放电过程的方法。     

Au对GaP接触界面形成及其特性

借助Ｘ射线衍射和扫描电子显微镜研究了Ａｕ和ＧａＰ接触体系界面特性的温度依赖性。测量表明,既使在低于４００℃温度下界面反应也会生成少量的Ａｕ－ＧａＰ金属间化合物,它的主要成份是（ＧａＡｕ）Ｈ,Ｇａ２Ａｕ,在较高温度５５０℃合金条件下界面反应生成少量的ＧａＰ化合物表面发生分解,界面反应增增并伴随着快速的原子间互扩散,大量Ｇａ原子向外迁移进入Ａｕ膜复盖层。同时,Ａｕ原子也内扩散进入ＧａＰ表面,Ａｕ－ＧＡ     

AuBe/p-GaP接触体系界面特性随温度变化的研究

微合金条件对M-S接触的表面与界面特性产生重要的影响.借助光电子能谱分析了AuBe/p-GaP接触体系界面组分变化,用扫描电子显微镜观察其表面形貌；从冶金学观点解析了M-S接触界面反应的特征,并对其温度依赖关系进行了讨论.     

高斯表面的多尺度方法模拟接触热阻

通过结合微观的格子Boltzmann方法和宏观的有限差分法,建立了一种计算两个固体表面间接触热阻的多尺度分析方法。计算分析了表面粗糙度、压力、材料硬度、导热系数等对接触热阻的影响,结果表明拥有相同粗糙度的表面,在低压条件下,导热系数是主要影响因素,而在高压情况下,压力是主导影响因素。计算结果与实验数据的对比分析显示,该多尺度模型与实验数据有较好的一致性。     

金属与金刚石薄膜接触的电学特性研究

用热丝辅助化学汽相沉积技术在Si衬底上合成了含少量受主型杂质的近于本征的金刚石薄膜，并研究了三种金属（Cu，Ag和Al）与它接触的电学特性，以及退火对接触特性的影响．结果表明Cu，Ag与金刚石薄膜接触的电学特性比较类似，而Al则明显不同；而且退火对它们的接触特性影响很大 关键词：     

Au/GaP接触体系界面特性的XPS分析

利用X射线光电子能谱研究了Au／GaP接触体系界面结构，组分随着热处理温度的变化.实验结果表明，即使在室温下金属和半导体原子间的扩散与迁移也会发生.Au/GaP接触退火时导致界面上GaP的分解并伴随着原子间快速扩散.当热处理温度升高，Au-Ga原子界面反应增强，从而生成复相结构Au-Ga金属间化合物.如Ga₂ Au，GaAu等.Au/GaP接触的界面是一个含有金、半导体原子的合金再生长层.从金属学的观点对界面的特性进行了讨论. 关键词：     

金属双层膜中量子输运的表面和界面散射效应

运用格林函数的解析方法研究金属双层膜的电子输运.考虑了量子尺寸效应和来自杂质、粗糙表面和粗糙界面三方面的散射,计算单粒子格林函数和平行电导率,得到了金属双层膜的电导公式.计算结果表明,在薄膜极限和表面及界面散射的最低阶近似下,系统总电导率等于各子能级通道的电导率之和,而各子能级通道中杂质、表面和界面产生的散射率是可相加的. 关键词：     

多层金属圆柱线中量子输运的表面和界面散射效应

考虑了量子尺寸效应以及来自杂质、粗糙表面和粗糙界面三方面的散射,运用量子统计的格林函数方法和久保公式,计算多层金属圆柱线中的各种散射电导率.计算结果表明,在杂质、表面和界面的弱散射极限下,系统总电导率等于各个子能级通道的电导率之和,而各子能级通道中杂质、表面和界面产生的散射率是可相加的. 关键词：     

Effects of pulsed bias duty ratio on microstructure and mechanical properties of TiN/TiAlN multilayer coatings

TiN/TiAlN multilayer coatings were deposited on M2 high speed steel by a pulsed bias arc ion plating system. The effect of pulsed bias duty ratio on the microstructure, mechanical and wear properties was investigated. The amount of macroparticles reduced with the increase of the duty ratio. The surface roughness was 0.0858 μm at duty ratio of 50%. TiN/TiAlN multilayer coatings were crystallized with orientations in the (1 1 1), (2 0 0) (2 2 2) and (3 1 1) crystallographic planes and the microstructure strengthened at (1 1 1) preferred orientation. At duty ratio of 20%, the hardness of TiN/TiAlN multilayer coatings reached a maximum of 3004 HV, which was 3.2 times that of the substrate. The adhesion strength reached a maximum of 77 N at 50% duty ratio. Friction and wear analyses were carried out by pin-on-disc tester at room temperature. Compared with the substrate, all the specimens coated with TiN/TiAlN multilayer coatings exhibited better tribological properties.     

Surface free energy of non-stick coatings deposited using closed field unbalanced magnetron sputter ion plating

Semiconductor IC packaging molding dies require wear resistance, corrosion resistance and non-sticking (with a low surface free energy). The molding releasing capability and performance are directly associated with the surface free energy between the coating and product material. The serious sticking problem reduces productivity and reliability. Depositing TiN, TiMoS, ZrN, CrC, CrN, NiCr, NiCrN, CrTiAlN and CrNiTiAlN coatings using closed field unbalanced magnetron sputter ion plating, and characterizing their surface free energy are the main object in developing a non-stick coating system for semiconductor IC molding tools. The contact angle of water, diiodomethane and ethylene glycol on the coated surfaces were measured at temperature in 20 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the coatings and their components (dispersion and polar) were calculated using the Owens-Wendt geometric mean approach. The surface roughness was investigated by atomic force microscopy (AFM). The adhesion force of these coatings was measured using direct tensile pull-off test apparatus. The experimental results showed that NiCrN, CrN and NiCrTiAlN coatings outperformed TiN, ZrN, NiCr, CiTiAlN, CrC and TiMoS coatings in terms of non-sticking, and thus have the potential as working layers for injection molding industrial equipment, especially in semiconductor IC packaging molding applications.     

PIIID复合强化处理轴承钢表面TiN膜层的XPS表征

用等离子体浸没离子注入与沉积(PIIID)复合强化新技术在AISI52100轴承钢基体表面成功合成了硬而耐磨的氮化钛薄膜。膜层表面的化学组成和相结构分别用X射线衍射(XRD)和X射线光电子能谱(XPS)表征;膜层表面的原子力显微镜(AFM)形貌显示出TiN膜结晶完整,结构致密均匀。XRD测试结果表明,TiN在(200)晶面衍射峰最强,具有择优取向。Ti(2p)的XPS谱峰泰勒拟合分析揭示出,Ti(2p_1/2)峰和Ti_2p3/2峰均有双峰出现,表明氮化物中的Ti至少存在不同的化学状态;N(1s)的XPS谱峰在396.51, 397.22和399.01 eV附近出现了三个分峰,分别对应于TiNO_y,TiN和N—N键中的氮原子。结合O(1s)的XPS结果,证实膜层中除生成有稳定的TiN相外,还有少量钛的氧化物和未参与反应的单质氮。整个膜层是由TiN,TiO₂,Ti—O—N化合物和少量单质氮组成的复合体系。     

埋层界面和空气表面和频光谱信号贡献的调控

本文研究表明通过膜厚控制和表面等离激元增强方法可有效区分隐藏界面和空气表面的和频振动光谱信号. 以氟化钙基底支撑的PMMA薄膜为模型,观察到隐藏界面和空气表面对和频信号贡献的变化. 通过监控羰基和甲基伸缩振动基团,发现薄PMMA膜的和频信号来自PMMA/空气表面的化学基团-CH₂、-CH₃、-OCH₃和C=O,而厚PMMA膜的和频信号则来自基底/PMMA埋层界面的-OCH₃和C=O基团. 随制膜浓度增大,埋层界面C=O基团的取向角从65°下降到43°,且浓度大于或等于0.5 wt%时,取向角等于45°±2°. 相比之下,空气表面C=O的取向角落在21°∽38°之间. 在金纳米棒存在条件下,表面等离激元可以极大地增强和频信号,尤其是来自埋层界面信号.     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

Free Surface and Interface Thermodynamics of Liquid Nickel in Contact with Alumina

Sessile drop experiments of Ni and Ni(2at.%Al) were conducted under controlled working conditions, at 1500°C, P(O₂) 10^–9 Torr. It is shown that Al and oxygen atoms engaged in the capillary driven mass transport at the interface have a significant impact on the surface/interface thermodynamics. The surface energy of liquid Ni determined from experiments in which Ni comes into contact with Al₂O₃ is significantly lower than that of high purity Ni, due to the segregation of Al. The free energy of segregation of Al to the free surface of Ni ( G _S) was found to range from –164 to –152 kJ/mol, indicating a relatively strong tendency for segregation of Al to the free surface of Ni(Al). It is proposed that an Al(O)-rich liquid layer forms adjacent to the Ni-Al₂O₃ interface, which improves interfacial adhesion. In the Ni(Al)-Al₂O₃ system, an increase in the Al content of the alloy leads to the improvement of both wetting and adhesion of the alloy on the ceramic, correlating with the improvement in the interface strength after solidification.     

酞菁铜/金属薄膜界面电位与光二次谐波特性分析

采用Kalvin探针和光二次谐波 (SecondHarmonicGeneration ,SHG)方法研究了铜酞菁衍生物 (Coppertetra tert butylPhthalocyanine ,CuttbPc )LB(Langmuir Blodgentt)膜与金属 (Al、Au)界面的空间电荷现象与非线性光学效应 .检测到空间电荷感应电场 (SpaceChargeInducedElectricField ,SCIEF)形成的表面电位与金属功函数有关 ,并随膜厚变化趋于饱和值 .尽管酞菁分子为中心对称体系 ,但仍有SHG效应 ,并观察到CuttbPc/Al样品在 12 6 0nm附近有异常增强的SH信号 ,而CuttbPc/Au样品未见该峰 .根据样品结构的物理模型 ,运用电磁场理论分析了界面电介质的非线性极化特性和光学效应产生机制 ,初步认为CuttbPc/Al的SH增强峰源于SCIEF形成的较强表面电位 ,说明SH信号的产生与界面静电现象有密切关系 .     

PTCDA/ITO表面和界面的X射线光电子能谱分析

利用X射线光电子能谱对PTCDA/p-Si有机/无机光电探测器中PTCDA/ITO表面和界面进行了测试分析。结果表明,苝环上的C原子的结合能为284.6 eV,酸酐中的C原子的结合能为288.7 eV,并存在来源于ITO膜中的氧对C原子的氧化现象,界面处C(1s)谱中较高结合能峰消失,且峰值向低结合能发生化学位移;CO键中O原子的结合能为531.5 eV,C—O—C键中的O原子的结合能为533.4 eV。     

M+AsF6-(M=Li,Na,K,Rb和Cs)离子对的结构和振动光谱

利用abinitio计算方法研究了AsF6-阴离子和M AsF6-(M =Li ,Na ,K ,Rb 和Cs )直接接触离子对的结构和光谱行为。结果表明,具有C3V结构三齿相互作用的M AsF6-最稳定,二齿配位的结构只有在特定条件下才可能稳定存在。当形成离子对后,阳离子与AsF6-的相互作用将改变AsF6-的结构,这其中Li 的影响最大。另外,AsF6-光谱的变化可用来指认溶液中离子的缔合和离子对的种类。