Gate-defined graphene quantum point contact in the quantum Hall regime

We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5h/e2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.     

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

In this paper we show the electronic transport and the quantum phase transitions that characterize the quantum Hall regime in graphene placed on SiO(2) substrates at magnetic fields up to 28 T and temperatures down to 4 K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals intriguing non-universalities of the critical exponents of the plateau-insulator transition. These exponents depend on the type of disorder that governs the electrical transport and its characterization is important for the design and fabrication of novel graphene nano-devices.     

Probing spin physics in the quantum Hall regime by heat capacity and magnetotransport measurements

We review recent heat capacity and magnetotransport experiments on GaAs/AlGaAs heterostructures containing multilayer two-dimensional electron systems (2DESs) in the quantum Hall regime. Emphasis in this article is on the study of the heat capacity near Landau level filling factor ν=1. We also present a detailed survey of the development of the quantum Hall effect in tilted-magnetic fields for ν≲2. Among the novel phenomena we address is the strong coupling between the nuclear spins and the electrons associated with the spin phase transitions of the 2DES at ν=4/3 and near ν=1. To cite this article: S. Melinte et al., C. R. Physique 3 (2002) 667–676.     

Edge state propagation direction in the fractional quantum Hall regime: multi-terminal magnetocapacitance experiment

The propagation direction of fractional quantum Hall effect (FQHE) edge states has been investigated experimentally via the symmetry properties of the multi-terminal capacitances of a two-dimensional electron gas. Although strong asymmetries with respect to zero magnetic field appear, no asymmetries with respect to even denominator Landau level filling factor ν are seen. This indicates that current-carrying FQHE edge states propagate in the same direction as integer QHE edge states. In addition, anomalous capacitance features, indicative of enhanced bulk conduction, are observed at and .     

Mesoscopic effects in the quantum Hall regime

We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to the corresponding magnetic subbands. In finite-size systems, we find that mesoscopic effects often dominate, leading to apparent non-universal scaling behavior in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to the numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior for strong disorder. This behavior may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic fields.     

Electronic correlation in the quantum Hall regime

Two‐dimensional interacting electron systems become strongly correlated if the electrons are subject to a perpendicular high magnetic field. After introducing the physics of the quantum Hall regime the incompressible many‐particle ground state and its excitations are studied in detail at fractional filling factors for spin‐polarized electrons. The spin degree of freedom whose importance was shown in recent experiments is considered by studying the thermodynamics at filling factor one and near one.     

Electron localization in the quantum Hall regime

The theory of the insulating state discriminates between insulators and metals by means of a localization tensor, which is finite in insulators and divergent in metals. In absence of time-reversal symmetry, this same tensor acquires an off-diagonal imaginary part, proportional to the dc transverse conductivity, leading to quantization of the latter in two-dimensional systems. I provide evidence that electron localization--in the above sense--is the common cause for both vanishing of the dc longitudinal conductivity and quantization of the transverse one in quantum Hall fluids.     

Dephasing effect on transport of a graphene p-n junction in a quantum Hall regime

The influence of the dephasing effect on the conductance distribution of disordered graphene p-n junctions is studied. Without the dephasing, the conductance distribution has a very wide range and the conductance fluctuation is large. In this case, the conductance plateaus cannot be obtained in a single sample with the fixed disorder configuration. However, by introducing the dephasing, we find that the distribution becomes narrow dramatically and the fluctuation is suppressed strongly, so that the conductance plateaus are obtained clearly for one single sample, which is consistent with experimental measurements. Furthermore, we also investigate the scaling feature of the conductance distribution and find that it has good scaling behavior in the strong dephasing case.     

Spin-valley quantum Hall phases in graphene

We theoretically investigate possible quantum Hall phases and corresponding edge states in graphene by taking a strong magnetic field, Zeeman splitting M, and sublattice potential ? into account but without spin–orbit interaction. It was found that for the undoped graphene either a quantum valley Hall phase or a quantum spin Hall phase emerges in the system, depending on relative magnitudes of M and ?. When the Fermi energy deviates from the Dirac point, the quantum spin-valley Hall phase appears and its characteristic edge state is contributed only by one spin and one valley species. The metallic boundary states bridging different quantum Hall phases possess a half-integer quantized conductance, like e2/2h or3e2/2h. The possibility of tuning different quantum Hall states with M and ? suggests possible graphene-based spintronics and valleytronics applications.     

Inhomogeneous Hall-geometry sample in the quantum Hall regime

A generalization of the known theory describing the Hall channels with integer filling factors in inhomogeneous 2D electronic samples to the case of a stationary nonequilibrium state (with a nonzero Hall voltage V _H across the 2D system) is proposed. For the central strip located near the extremum of the electron density, the theory predicts a change in its width and a shift of the whole strip from the equilibrium position as functions of V _H . The theoretical results are used to interpret recent experiments on measuring the local electric fields along the Hall samples both in equilibrium conditions and in the presence of transport in the quantum Hall regime.     

Conductivity peaks broadening in the quantum Hall regime

We argue that it is the hopping transport that is responsible for broadening of the σ_xx peaks. Explicit expressions for the width Δν of a peak as a function of the temperature T, current J and frequency ω are found. It is shown that Δν grows with T as (T/T₁)^κ, where κ is the inverse localization-length exponent. The current J is shown to act like the effective temperature T_eff(J) ∝ J^1/2 if . Broadening of the ohmic ac-conductivity peaks with frequency ω is found to be determined by the effective temperature