低成本衬底上多晶硅薄膜电池的探索

在低成本、两种纯度的P^ 颗粒硅带衬底(SSP)上，采用RT化学气相沉积(CVD)技术制备了多晶硅薄膜电池。无论高纯硅粉还是低纯硅粉制备的SSP衬底杂质含量都很高且表面凹凸不平；采用4μm／min的沉积速率和钝化作用得到了高质量外延多晶硅薄膜。通过扩散工艺制成的多晶硅薄膜太阳电池的转换效率分别为6．25％(高纯硅粉制成的SSP衬底)和4．5％(低纯硅粉制成的SSP衬底)。     

氢退火的BZO前电极对非晶硅薄膜太阳能电池性能的影响

采用低压化学气相沉积方法在玻璃衬底上制备了B掺杂的ZnO（BZO）薄膜,通过氢退火对BZO进行处理,然后作为前电极进行了非晶硅薄膜太阳能电池的制备及性能研究。结果表明：在氢气气氛下退火后,BZO薄膜的载流子浓度基本无变化,但Hall迁移率显著提高,这使得BZO薄膜的导电能力提高;当采用厚度较小、透光率较高的BZO薄膜进行氢退火后作为前电极结构时,非晶硅薄膜太阳能电池的短路电流密度提高0.3~0.4 mA/cm²,电池的转化效率提高0.2%。实验结果可为通过优化前电极结构来提高非晶硅薄膜太阳能电池转化效率提供一种简易的方法。     

新型硅薄膜太阳能电池混合陷光结构

针对应用于薄膜太阳能电池的一种混合陷光结构进行了分析研究,该结构由位于电池正面的电介质颗粒和位于电池背面的金属颗粒构成.运用有限时域差分法模拟分析了正面电介质颗粒与背面金属颗粒对光吸收增强的不同作用范围.运用电场图分析了其对光吸收增强的机制,包括两种颗粒的散射作用和金属纳米颗粒的表面等离子体近场增强作用.分别优化了正面电介质颗粒和背面金属颗粒的材料、大小等参量,获得了一种优化后的混合陷光结构.实验表明带有这种混合陷光结构的电池短路电流密度相对于参考电池提高了30.3%,该方法为提高薄膜太阳能电池效率提供了新思路.     

Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction

In this article, we report the growth of zinc‐tin nitride (ZnSnN₂) thin films as a potential absorber for photovoltaic applications by fabricating a heterojunction of n‐ZnSnN₂/p‐SnO. The performance of the heterojunction has been monitored through selective deposition of top electrode with different materials (Ni/Au or Al). The electron‐transfer process from the ZnSnN₂ layer to the cathode is facilitated by selecting metal electrode with relatively low work function, which also boosts up the electron injection or/and extraction. The diode exhibits a good J–V response in the dark with a rectification ratio of 3 × 10³ at 1.0 V and an ideality factor of 4.2 in particular with Al as the top electrode. Under illumination, the heterostructure solar cell demonstrates a power conversion efficiency of ≈0.37% with an open circuit voltage of 0.25 V and a short circuit current density of 4.16 mA cm^?2. The prime strategies, on how to improve solar cell efficiency concerning band offsets and band alignment engineering are also discussed.     

免光学间隔层的高效聚合物太阳能电池

使用相对聚(3乙基噻吩)(P3HT)具有更低能带结构的聚{[9-(1辛基壬基)-9H-咔唑-2,7-2基]-2,5-噻吩二基-2,1,3-苯并噻二唑-4,7-二基-2,5噻吩二基}(PCDTBT)作为电子给体材料和较C60衍生物(PC60BM)具有更广光谱吸收能力的C70衍生物(PC70BM)作为电子受体材料构建共混体系活性层,制备有机聚合物太阳能电池。通过控制活性层薄膜生长速度、环境得出在N2环境中静置10min时聚合物电池达到了5.65%的高光电转换效率(PCE)。然后,通过进一步优化活性层薄膜厚度短路电流密度大幅提升至14.2mA/cm2,PCE达到5.84%。结果表明,在不使用TiOx等光学间隔层的情况下,通过控制活性层薄膜生长过程和优化活性层薄膜厚度也可以大幅增加短路电流密度,获得高的PCE。     

二甲基亚砜添加剂对聚合物太阳能电池性能的影响

研究了二甲基亚砜(DMSO)掺杂浓度对基于聚(3-己基噻吩)(P3HT)和(6,6)-苯基碳60丁酸甲酯(PCBM)为有源层的聚合物太阳能电池性能影响。结果表明,掺杂DMSO可以提高聚合物太阳能电池短路电流密度和填充因子。DMSO掺杂质量比为3%时,电池短路电流密度提高到7.88 mA·cm-2,填充因子为55.5%。能量转换效率达到2.54％,相比没有掺杂DMSO的电池,能量转换效率提高了17%。傅里叶变换红外光谱被用于鉴定和分析掺杂DMSO对材料P3HT∶PCBM化学性质的影响。傅里叶变换红外光谱表明,掺杂后P3HT和PCBM的化学性质都没有改变。为分析掺杂DMSO改善器件能量转换效率的原因,通过紫外-可见光谱和电流密度-电压特性曲线分别表征器件的光吸收能力以及电致发光器件的载流子迁移率。与P3HT∶PCBM薄膜相比,P3HT∶PCBM∶DMSO薄膜在可见光范围内的吸收峰有明显红移且吸收强度增强。可见光吸收的改善是实现短路电流密度提高的有力保障。太阳能电池性能的增强是因为DMSO的掺杂提高了P3HT∶PCBM的载流子迁移率和吸收光谱宽度。     

衬底温度对共蒸发法制备Cu2ZnSnSe4太阳电池的影响

采用共蒸发法在不同衬底温度下沉积Cu_2ZnSnSe_4(简称CZTSe)薄膜,分析了衬底温度对CZTSe材料性质及电池性能的影响。研究表明:当衬底温度较低时(380℃),CZTSe薄膜中含有SnSe_x使电池失效;随着衬底温度的升高,CZTSe薄膜的结晶质量明显提升,电池开路电压增加。但当衬底温度达到460℃时,电池的转换效率反而下降;结合CZTSe的生长机理及器件模型分析了电池效率下降可能的原因。最终在衬底温度420℃的条件下制备出效率为3.12%(有效面积0.34 cm~2)的CZTSe太阳电池。     

Anionic nonconjugated polyelectrolyte as an anode interfacial layer for polymer solar cells

Since the most high-performing donor polymers in polymer solar cells (PSCs) possessed the deep highest occupied molecular orbital (HOMO) level, interfacial engineering on anode contact is becoming increasingly important. Herein, we demonstrated efficient PSCs using an anionic poly(styrene sulfonate) (PSS) as an anode interfacial layer (AIL). With the formation of the dipole layer, the effective work function (WF) of indium tin oxide (ITO) electrode is significantly increased from 4.8 to 5.3 eV, providing favorable energetic alignment to the quasi-Fermi level of various donor polymers. Moreover, by incorporating cationic polyelectrolytes as a cathode interfacial layer, a pair of electric dipole layers induces a strong built-in electric field across the photoactive layer to drive efficient sweep-out of photogenerated charges. Consequently, the device with PSS AIL exhibited high power conversion efficiencies of 9.2 and 14.8% in PTB7-Th:PC₇₁BM- and PM6:Y6-based PSCs, respectively, both of which are higher than those of the devices with PEDOT:PSS.     

Quantitative evaluation method for electroluminescence images of a‐Si:H thin‐film solar modules

This work presents a method for extracting the absolute local junction voltage of a‐Si:H thin‐film solar cells and modules from electroluminescence (EL) images. It is shown that the electroluminescent emission of a‐Si:H devices follows a diode law with a radiative ideality factor n_r larger than one. We introduce an evaluation method that allows us to determine the absolute local junction voltage in cases of n_r > 1, while existing approaches rely on the assumption of n_r = 1. Furthermore, we find that the experimentally determined values of n_r vary from sample to sample. It is also explained why the derived radiative ideality factor is influenced by the spectral sensitivity of the camera system used in the experiment. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

分步磁控溅射ZnO和/或功能化碳纳米粒子修饰ZnO电子传输层增强聚合物太阳能电池效率

氧化锌具有良好电子传输性和高透光性,ZnO作为电子传输层已被广泛应用于聚合物太阳能电池。但采用溶胶凝胶法和真空镀膜制备ZnO电子传输层,因ZnO界面具有大量缺陷,极大增加载流子复合。抑制ZnO界面复合电流和改善ZnO界面接触性能,是提高ZnO基电子传输层聚合物太阳能电池性能关键所在。基于P3HT:PCBM反转型聚合物太阳能电池,采用磁控溅射ZnO层,研究了离子液功能化碳纳米粒子(ILCNs)修饰层或Ar/O₂混合气体溅射沉积ZnO修饰层,以及Ar/O₂溅射ZnO界面层与ILCNs联合修饰ZnO界面的聚合物太阳能电池性能。纯Ar和Ar/O₂混合气体下一步溅射沉积ZnO电子传输层,其电池效率分别为2.2%和2.8%。经ILCNs修饰或Ar/O₂溅射ZnO修饰层,电池效率分别达到3.4%和3.1%,并且分步溅射ZnO层并联合ILCNs修饰ZnO界面,聚合物太阳能电池效率可提高到3.8%。ZnO修饰型聚合物太阳能电池克服了电化学阻抗负阻效应,降低了反向暗电流并显示出更好的整流特性。研究表明,采用ILCNs修饰ZnO层和分步溅射ZnO层能有效抑制ZnO界面缺陷和改善界面接触性能,而采用分步溅射ZnO层与ILCNs联合修饰ZnO界面,这种联合修饰ZnO界面方案,更能增强ZnO层电子传输和提取能力,是提高聚合物太阳能电池效率更为有效方案。     

p‐Type Dye‐Sensitized Solar Cells with a CdSeS Quantum‐Dot‐Sensitized NiO Photocathode for Outstanding Short‐Circuit Current

CdSeS quantum dots (QDs) are firstly introduced into a NiO photocathode for photocathodic dye‐sensitized solar cells (p‐DSCs). The optimized sample exhibits a short‐circuit density (14.68 mA cm^?2) and power conversion efficiency (1.02%) that are almost one order of magnitude higher than the reported value of p‐QDSCs. Steady‐state photoluminescence and time‐resolved photoluminescence measurements indicate that the photoexcited holes can be almost completely injected from CdSeS QDs into the valence band of NiO. At the same time, it can be observed from electrochemical impedance spectra measurements.