Cyclotron resonance in asymmetric double quantum wells

Far-infrared magnetotransmission measurements in magnetic fields are carried out on asymmetric coupled double wells. We observe a splitting in the cyclotron resonance (CR) line for a wide range of intermediate magnetic fields and only one line at high magnetic fields. Two peaks observed in the CR spectra correspond to transitions between Landau levels in individual wells. We propose that phase transition between weak and strong coupling regimes may be responsible for the features. The characteristics of the transition are studied via an analysis of CR masses, CR splitting and line widths as a function of the magnetic field.     

Cyclotron resonance of Dirac ferions in HgTe quantum wells

Cyclotron resonance of single-valley two-dimensional Dirac fermions in HgTe-based quantum wells has been experimentally investigated. The thickness of the wells is close to the critical value corresponding to the transition from the direct energy spectrum to the inverted spectrum. Under terahertz laser irradiation, transitions between the ground and first Landau levels, as well as between the first and second Landau levels, have been observed. Low magnetic fields corresponding to the cyclotron resonance, as well as the strong dependence of the position of the resonance on the electron density, indicate the Dirac character of the spectrum in these quantum wells. It has been shown that disorder plays an important role in the formation of the spectrum of two-dimensional Dirac fermions.     

Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons

In the cyclotron resonance (CR) spectra of two-dimensional (2D) electrons in InAs quantum wells, the CR line splitting is observed. The splitting is found to be an oscillating function of magnetic field. The oscillations do not correlate with the filling factor. The experimental results are interpreted in terms of the spin-orbit splitting in the presence of a built-in electric field appearing due to the asymmetry of the quantum-well potential. From the splitting of the CR line, the spin-orbit coupling constant α_so is determined. The resulting value agrees well with the value obtained for the same sample from the Shubnikov-de Haas oscillations. The role of the resonance interaction of charge carriers in the well with the interface donor states is discussed.     

双稳系统演化的时间尺度与随机共振的加强

噪声作用下的双稳系统存在着单一势阱内的随机波动和两势阱之间的概率跃迁,这两种不同层级的运动具有不同的时间尺度,且低层级的势阱内的波动影响着高层级的势阱间的跃迁．当外作用周期信号的时间尺度与噪声诱导的势阱间概率跃迁达到随机同步时,则能产生随机共振;给系统再加第二驱动周期信号,使其时间尺度与低层级的势阱内的波动相匹配,则存在着频率吸收现象,并能增强双稳系统的随机共振效应． 关键词： 随机共振 双稳系统 层级 时间尺度     

Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field

Spectra of magnetoabsorption and Faraday rotation in HgTe/CdHgTe heterostructures with single and double quantum wells in high magnetic fields up to 11 T have been studied by the Fourier-transform spectroscopy method. The study of Faraday rotation spectra makes it possible to determine the sign of resonance circular polarization of transitions between Landau levels of carriers, which allows identifying observed intraband and interband transitions in the far and middle infrared ranges.     

Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors

Novel applications of the technique of optically detected cyclotron resonance (ODCR) are discussed. This method is an extension of the conventional cyclotron resonance investigations and shows important advantages when applied to characterization of semiconductor materials. These advantages are due to a higher sensitivity and a longer momentum relaxation time caused by photoneutralization of ionized impurities. This in turn enables experiments at lower magnetic fields and lower microwave radiation frequency. Photoexcitation used in ODCR often results in a simultaneous observation of electron and hole cyclotron resonances in the same sample, which is a rare case in a conventional CR study. High magnetic field far infrared ODCR experiments utilize all these advantages of the method. For the most common X-band (10 GHz) microwave setups, the ODCR resolution often is too low to allow accurate CR determination of the band structure parameters of the material studied. In that case, ODCR may be used for high-resolution photoluminescence experiments and for identification of carrier capture and recombination paths at impurities, as was proposed recently. These new and important applications of the ODCR technique are described here, and documented by recent experimental results. The mechanism of ODCR detection for pure and doped semiconductors is discussed, and a prominent role of the impact ionization mechanism is demonstrated. This is followed by a discussion of recent applications of ODCR for identification of recombination mechanisms. Then high spectral resolution ODCR experiments are described, with the example of overlapping free-to-bound and donor-acceptor pair transitions. Some special applications of ODCR are demonstrated. ODCR also can be applied to analyze quantum confinement of carriers in two-dimensional (2D) structures such as heterojunctions and quantum wells. It is shown that useful information can be obtained on the electronic properties of the 2D electron (or hole) gas and the interlayer carrier transfer enhanced by carrier heating at CR absorption in such structures.     

Effect of toroidal moment on a macroscopic self-organization of electrons in the quantum Hall regime

We have studied CR lineshape of terahertz-light-induced current in InAs quantum wells in tilted quantizing magnetic fields. We have observed dramatic modification of the lineshape with increasing of in-plane component of magnetic field as well as with increasing of transverse built-in electric field in the well. Scenario of the modification shows that the energy spectrum asymmetry is determined by so-called toroidal moment of the system and is a function of Landau quantum number. Macroscopic self-organization of electrons under the conditions of quantum Hall effect has also been directly demonstrated in both linear and saturation regimes of the light absorption.     

Control of stochastic resonance in bistable system by using periodic signal

<正>According to the characteristic structure of double wells in bistable systems,this paper analyses stochastic fluctuations in the single potential well and probability transitions between the two potential wells and proposes a method of controlling stochastic resonance by using a periodic signal.Results of theoretical analysis and numerical simulation show that the phenomenon of stochastic resonance happens when the time scales of the periodic signal and the noise-induced probability transitions between the two potential wells achieve stochastic synchronization.By adding a bistable system with a controllable periodic signal,fluctuations in the single potential well can be effectively controlled,thus affecting the probability transitions between the two potential wells.In this way,an effective control can be achieved which allows one to either enhance or realize stochastic resonance.     

Quantum cascade transitions in nanostructures

In this article we review the physical characteristics of quantum cascade transitions (QCTs) in various nanoscopic systems. The quantum cascade laser which utilizes such transitions in quantum wells is a brilliant outcome of quantum engineering that has already demonstrated its usefulness in various real-world applications. After a brief introduction to the background of this transition process, we discuss the physics behind these transitions in an externally applied magnetic field. This has unravelled many intricate phenomena related to intersubband resonance and electron relaxation modes in these systems. We then discuss QCTs in a situation where the quantum wells in the active regions of a quantum cascade structure are replaced by quantum dots. The physics of quantum dots is a rapidly developing field with its roots in fundamental quantum mechanics, but at the same time, quantum dots have tremendous potential applications. We first present a brief review of those aspects of quantum dots that are likely to be reflected in a quantum-dot cascade structure. We then go on to demonstrate how the calculated emission peaks of a quantum-dot cascade structure with or without an external magnetic field are correlated with the properties of quantum dots, such as the choice of confinement potentials, shape, size and the low-lying energy spectra of the dots. Contents PAGE 1 Introduction 456 2 Intersubband transitions in quantum wells 458 3 Quantum cascade transitions 462 3.1. Basic principles 462 3.1.1. Minibands and minigaps 464 3.1.2. Vertical transitions 464 3.1.3. GaAs/AlGaAs quantum cascade lasers 464 3.1.4. QCLs based on superlattice structures 465 3.1.5. Type-II quantum cascade lasers 466 3.1.6. Recent developments 466 3.2. Applications: sense-ability and other qualities 466 4 Quantum cascade transitions in novel situations 467 4.1. External magnetic field 467 4.1.1. Parallel magnetic field 468 4.1.2. Many-body effects: depolarization shift 470 4.1.3. The role of disorder 471 4.1.4. Tilted magnetic field 475 4.2. Magneto-transport experiments and phonon relaxation 479 4.3. Magneto-optics experiment and phonon relaxation 484 5 A brief review of quantum dots 485 5.1. From three- to zero-dimensional systems 485 5.2. Making the dots 487 5.2.1. Lithographic patterning 487 5.2.2. Self-assembled quantum dots 488 5.3. Shell filling in quantum dots 489 5.4. Electron correlations: spin states 490 5.5. Anisotropic dots 491 5.6. Influence of an external magnetic field 491 5.6.1. The Fock diagram 491 5.6.2. The no-correlation theorem 492 5.6.3. Correlation effects and magic numbers 492 5.6.4. Spin transitions 493 5.7. Quantum dots in novel systems 494 5.8. Potential applications of quantum dots 494 5.8.1. Single-electron transistors (SETs) 494 5.8.2. Single-photon detectors 494 5.8.3. Single-photon emitters 495 5.8.4. Quantum-dot lasers 495 6 Quantum cascade transitions in quantum-dot structures 496 6.1. Quantum dots versus quantum wells 496 6.2. QCT with rectangular dots 497 6.2.1. Vertical transitions 500 6.2.2. Diagonal transitions 501 6.3. QCT in a parabolic dot 504 6.4. Magnetic field effects on intersubband transitions 506 6.5. Mid-IR luminescence from a QD cascade device 512 7 Summary and open questions 513 Acknowledgements 515 References 515     

Internal transitions of negatively charged magnetoexcitons and many body effects in a two-dimensional electron gas

Internal transitions of quasi-two-dimensional, negatively charged magnetoexcitons ( X-) and their evolution with excess electron density have been studied in GaAs/AlGaAs quantum wells. In the dilute electron limit, due to magnetic translational invariance, the optically detected resonance spectra are dominated by bound-to-continuum bands in contrast to the negatively charged donor system D-, which exhibits strictly bound-to-bound transitions. With increasing excess electron density Landau-level filling factors nu<2 the X--like transitions are blueshifted; they are absent for nu>2. The blueshifted transitions are explained in terms of a new type of collective excitation---magnetoplasmons bound to a mobile valence band hole.     

Many body effects and internal transitions of confined excitons in GaAs and CdTe quantum wells

Many body effects contribute significantly to the energy states of electron-hole pairs confined in quantum wells in the presence of excess electrons. We present results of optically detected resonance spectroscopy of the internal transitions of photo-excited electron-hole pairs in the presence of excess electrons for GaAs QWs and CdTe QWs. Compared to the case of isolated negatively charged excitons, excess electrons produce a large blue shift of the internal transitions in modulation-doped GaAs quantum wells (QWs) for filling factor <2, and similar effects are found in CdTe QWs. For filling factor >2 no internal transitions are observed. These measurements demonstrate the strong effects of electron-electron correlations on the internal transitions of charged excitons in these quasi-2D systems and the importance of magnetic translation invariance. In the presence of excess electrons, the observed internal transitions are those of a magnetoplasmon bound to a mobile valence band hole.     

GaAs/Al1-xAs表面单量子阱原位光调制反射光谱研究

关键词：     

Dynamic nuclear polarization and nuclear magnetic resonance in the vicinity of edge states of a 2DES in GaAs quantum wells

Nuclear magnetic resonance is detected via the in-plane conductivity of a two-dimensional electron system at unity Landau level filling factor in the regime of the quantum Hall effect in narrow and wide quantum wells. The NMR is spatially selective to nuclei with a coupling to electrons in the current carrying edge states at the perimeter of the 2DES. Interpretation of the electron-nuclear double resonance signals is facilitated by numerical simulations. A new RF swept method for conductivity-detected NMR is introduced which offers more efficient signal averaging. The method is applied to the study of electric quadrupole interactions, weakly allowed overtone transitions, and evaluation of the extent of electron wave function delocalization in the wide quantum well.     

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.     

The theory of the cyclotron resonance line half-width in limited-size systems

Many-phonon optical transitions between Landau levels and size quantization levels in a longitudinal magnetic field are investigated in solitary quantum wells. The developed theory makes it possible to describe the intensity of the cyclotron resonance line as well as the temperature and field dependences of its half-width. The theoretical results are compared with experimental data. It is shown that when the interaction between electrons and optical phonons is taken into account, phonon satellites may appear as a result of an electron transition between the size quantization levels and magnetic levels.     

Intersubband transitions in band gap engineered parabolic potential wells

Intersubband transitions in spike-inserted wide parabolic quantum wells are investigated. A thin potential barrier within the pure parabola devides the electron system in two well separated but strongly coupled layers, which in turn drastically changes the collective excitations scheme. In contrast to a pure parabolic quantum well where according to the generalised Kohn's Theorem only one fixed resonance is observed, the collective intersubband transitions recover the complex coupling and splitting scheme of the single particle states of a strongly coupled system. We interpret our experimental findings in terms of resonant tunnel processes and discuss them using simple model calculations.     

Shallow acceptor levels in Ge/GeSi heterostructures with quantum wells in a magnetic field

Shallow acceptors in Ge/GeSi heterostructures with quantum wells are studied theoretically and experimentally in the presence of a magnetic field. It is shown that, in addition to the cyclotron resonance lines, magnetoabsorption spectra reveal transitions from the acceptor ground state to excited states related to Landau levels from the first and second confinement subbands, as well as the resonances caused by ionization of A⁺ centers.     

Blue luminescence from the InGaN multiple quantum wells

We have fabricated very high-quality In_0.13Ga_0.87N/GaN multiple quantum wells with thickness as small as on (0 0 0 1) sapphire substrate using metal organic chemical vapour deposition (MOCVD). We have investigated these ultra-thin multiple quantum wells by continuous wave (cw) and time resolved spectroscopy in the picosecond time scales in a wide range of temperatures from 10 K to 290 K. In the luminescence spectrum at 10 K we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full-width at half-maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. The ultra narrow width of the quantum well was found to have a very profound effect in increasing the emission linewidth. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied. The peak positions and intensities of the different peaks were obtained after a careful Lorentzian analysis. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K. The results were explained by considering the localization of the excitons due to potential fluctuations. At higher temperatures the non-radiative recombination was found to be very dominant.     

Magnetoabsorption spectra of magnetoexciton transitions in GaAs/Ga0.7Al0.3As quantum wells

The internal transitions and absorption spectra of confined magnetoexcitons in GaAs/Ga0.TA10.aAs quan- tum wells have been theoretically investigated under magnetic fields along the growth direction of the semiconductor heterostructure. The magnetoexciton states are obtained within the effective-mass ap- proximation by using a variational procedure. The trial exciton-envelope wavefunctions are described as hydrogeniclike polynomial functions. The internal transition energies are investigated by studying the allowed magnetoexcitonic transitions using terahertz radiation circularly polarized in the plane of the quantum well. The intraexcitonic magnetoabsorption to 2p^± like magnetoexciton states as functions of the coefficients are obtained for transitions from 1s-like applied magnetic field.     

Electron spin resonance studies on quantum tunneling in spinel ferrite nanoparticles

The electron spin resonance (ESR) spectrometer, a very sensitive instrument with fast detecting window to explore quantum phase transitions for magnetic nanoparticles, was exploited to study the fascinating interplay between thermal and quantum fluctuations in the vicinity of a quantum critical point. We have measured ESR in ferrofluid samples containing nanosize particles of Fe₂O₃. The evolution of the ESR spectrum with temperature suggests that quantum tunneling of spins occurs in single domain magnetic particles in the low temperature regime. The effects of various microwave fields, particle sizes, and temperatures on the magnetic states of single domain spinel ferrite nanoparticles are investigated. We can consistently explain experimental data assuming that, as the temperature decreases, the spectrum changes from superparamagnetic (SPR) to blocked SPR and finally evolves quantum superparamagnetic behaviour as the temperature lowers down further. A nanoparticle system of a highly anisotropic magnetic material can be qualitatively specified by a simple quantum spin model, or by the Heisenberg model with strong easy-plane anisotropy.Received: 29 August 2003, Published online: 15 October 2003PACS: 76.30.-v Electron paramagnetic resonance and relaxation - 75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.) - 05.30.-d Quantum statistical mechanics - 75.50.Dd Nonmetallic ferromagnetic materials