气敏器件用SnO_2薄膜材料

采用溶胶－凝胶法以ＳｎＣｌ２·Ｈ２Ｏ和ＺｒＯＣｌ２·８Ｈ２Ｏ为原料,制备出性能优良的纳米ＳｎＯ２薄膜材料。用Ｘ射线衍射仪分析了晶相,ＴＥＭ分析了微观结构。研究了掺杂、处理温度等对其性能的影响。在此基础上制作了ＳｎＯ２薄膜气敏器件,并检测了其气敏特性。     

用sol-gel法在不锈钢基片上制备TiO2薄膜

介绍利用钛酸丁酯为前驱液，用sol-gel法在不锈钢基片上制备TiO     

WO3/SnO2复合薄膜的制备及光电性能

采用水热法和电化学沉积法,成功制备了包覆有SnO₂纳米颗粒的WO₃纳米棒阵列薄膜,退火处理后形成WO₃/SnO₂异质结复合薄膜。通过改变SnO₂的沉积时间得到了复合薄膜的最佳制备条件。采用XRD,FESEM对WO₃/SnO₂复合薄膜的物相和形貌进行了分析,通过电化学工作站对WO₃/SnO₂复合薄膜的光电性能进行了研究,结果表明,电沉积时间为120 s时,WO₃/SnO₂复合薄膜具有最小的阻抗,且在0.6 V的偏压下光电流密度为0.46 mA/cm²,相比于单一WO₃纳米棒薄膜,表现出更好的光电化学性能。     

SnO2∶Sb薄膜的制备和光致发光性质

用射频磁控溅射法在玻璃衬底上制备出SnO2∶Sb薄膜．制备样品为多晶薄膜，具有纯氧化锡的四方金红石结构和(110)择优取向，Sb离子以替位式掺杂的形式存在于SnO2晶格中．室温条件下对样品进行光致发光测量，在392nm附近观测到强的紫外-紫光发射，发射强度随制备功率的增加而增强，且样品退火后发射强度也明显增强．紫外-紫光发射的起源被归于由Sb形成的施主能级和受主能级之间的电子跃迁．     

SnO2光透射率气敏薄膜的制备

采用溶胶-凝胶技术,利用旋转涂膜法制备非晶态二氧化锡薄膜,常温下在含有CO的气氛中光通过薄膜的透射率变大,对CO有较高的灵敏度.对制备过程中出现的实验现象、制备机理及薄膜的结构和特性进行了研究.     

SnO2陶瓷材料的制备及其气敏特性

研究了Sn粒的硝酸氧化法、SnCl     

掺杂纳米SnO2气敏传感器的研究进展

介绍了半导体气敏传感器的发展历史和掺杂纳米SnO2气敏传感器的特性与应用;详细分析了掺杂金属单质、金属氧化物和稀土元素对SnO2气敏性的影响,通过掺杂可以显著改善其对特定气体的灵敏度、稳定性和选择性等参数;利用元件表面的氧吸附理论分析掺杂纳米SnO2的气敏机理;展望了SnO2气敏传感器的发展前景.     

TiO2纳米材料对甲醛气体的气敏性能研究

采用溶胶-凝胶法合成了对甲醛气体（HCHO）敏感的纳米晶TiO2材料。利用X射线衍射（XRD）、X射线光电子能谱（XPS）等测试方法对TiO2纳米晶结构和表面态进行了表征。X射线衍射结果表明，随温度的增加，TiO2的晶型会由锐钛矿型逐渐转变为金红石型。制成了敏感元件，对甲醛气敏性能进行了测试。测试结果表明，500℃下焙烧2h所制得的锐钛矿型TiO2对甲醛气体有很好的敏感性能。     

Sb掺杂SnO2/SiO2纳米光学气敏薄膜的制备及其性质

采用溶胶凝胶(sol-gel)工艺制备了Sb掺杂SnO2/SiO2复合膜。通过X射线衍射(XRD)、傅立叶变换红外谱(FT-IR)及原子力显微镜(AFM)表征了薄膜样品的物相结构与表面形貌,利用紫外-可见光谱研究了复合薄膜光学特性．利用p-偏振光双面反射法对薄膜的气敏特性进行了测试。实验结果表明,薄膜中的晶粒具有纳米尺寸(～35nm)的大小．比表面积大,孔隙率高;薄膜的透光率高,可见光波段近95％;纳米Sb：SnO2：SiO2复合膜的气敏灵敏度高于纯SnO2薄膜及Sb掺杂的SnO2薄膜。     

溶胶-凝胶法制备ZnO薄膜光电导紫外光敏器件

利用溶胶-凝胶(Sol-Gel)法制备ZnO薄膜获得了响应速度快和灵敏度高的光电导型紫外光敏器件,并改善了器件的稳定性.采用正交试验表格L18[37]安排试验.分析后得到具有最佳响应时间和灵敏度的优化工艺参数为搅拌时间2.0 h,甩膜速率4 000 r/min,甩膜层数3层,退火温度500℃,退火时间2.5 h,预处理温度200℃,叉指间距0.109 mm.测得器件上升时间5 s,下降时间3 s,在0.85 mW/cm2的紫外光强下的灵敏度(光电流与暗电流之比)R/R0为26,稳定性能良好.     

H2S gas detection by ZrO-doped SnO2

The authors report on the fabrication of H₂S gas sensors made of SnO₂ mixed with ZrO₂. Their sensitivities, responses, and selectivities to H₂S are presented. A 10-p.p.m. concentration of H₂S gas changes the sensor resistivity to a value 300 times lower than that for air around 175°C. The sensors exhibit highly selective detection of H₂ S in an atmosphere containing H₂S and H₂. The mechanism of the reaction between the sensors and H₂S are also discussed     

SnO2薄膜气敏光透射机理

本文利用表面态能级分裂理论,解释SnO2薄膜气敏光透射规律的机制。理论与实验结果相符合。     

纳米化SnO_2气敏材料的研究进展

二氧化锡(SnO2)是一种传统的n型半导体气敏材料,纳米化是改进和提高SnO2气敏特性的重要途径。对近几年来SnO2气敏材料纳米化的研究进行了介绍,主要针对几种典型的具有特殊形貌纳米结构的SnO2气敏材料合成方法和气敏特性等方面的研究成果进行了概述,并对这些特殊形貌纳米结构SnO2作为高性能气敏材料应用和发展的前景进行了展望。     

Fe-doped SnO2 obtained by mechanical alloying

In this work, iron-doped SnO₂ powders were prepared by two methods: mechanical alloying and mechanochemical alloying with successive thermal treatment. The influence of different milling conditions such as ball to powder weight ratio, milling time, rotation velocity of supporting disc and the type of iron starting reactive and their Fe concentration on the structural and magnetic properties of the products were investigated. A greater incorporation of Fe in the SnO₂ structure was observed when the samples were prepared by using mechanochemical alloying and successive thermal treatment.     

（Li,Nb）掺杂SnO2压敏材料的电学非线性研究

研究了掺锂对SnO2压敏电阻器性能的影响.研究发现Li+对Sn4+的取代能明显提高陶瓷的烧结速度和致密度,且能大幅度改善材料的电学非线性性能.掺入x(Li2CO3)为1.0%的陶瓷样品具有最高的密度(P=6.77g/cm3)、最高的介电常数(ε=1851)、最低的视在势垒电场(EB=68.86V/mm)和最高的非线性常数(α=9.9).对比发现,Na+由于具有较大的离子粒半径,其掺杂改性性能相对较差.提出了SnO2@Li2CO3@Nb2O5晶界缺陷势垒模型.     

Preparation of n-type semiconductor SnO2 thin films

We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,respectively.The SnO₂:F thin films were deposited at 350℃and a pending time of 60 and 90 s.The as-grown films exhibit a hexagonal wurtzite structure and have（101） orientation.The G = 31.82 nm value of the grain size is attained from SnO₂:F film grown at 90 s,and the transmittance is greater than 80%in the visible region.The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58（Ω·cm）^-1,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature.     

Thermoelectric power of SnO2 anisotropic thin films

A calculation of thermoelectric power in fluorine-doped SnO₂ thin films is carried out using the Boltzmann transport theory and including anisotropic effects over material as well as the degeneracy grade of the samples. Curves of thermoelectric power in dependence of the temperature and concentration of F-impurities are reported. Finally, the computed values are compared with those obtained experimentally.