Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions

Spin dynamics in several different types of ferromagnetic metal(FM)/10-nm-thick n-type GaAs quantum well(QW) junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped 10-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 5,consistent with the D'yakonov-Pcrel' spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped 10-nm-thick n-type GaAs QW junction, the MnGa/in-situ doped 10-nm-thick n-type GaAs QW junction is of a spin lifetime longer by a factor of 4.2. The later observation is well explained by the Rashba effect in the presence of structure inversion asymmetry, which acts directly on photo-excited eleetron spins. We demonstrate that MnGa-like FM/in-situ doped 10-nm-thick n-type GaAs QW junctions, which possess relatively low interfacial potential barriers, are able to provide long spin lifetimes.     

Magneto transport on the surface of a topological insulator spin valve

The effects of the magnetization on the transport properties of a ferromagnet/barrier/ferromagnet spin valve fabricated with a topological insulator are studied. We consider two types of junctions, (i) an F₁/normal barrier (NB)/F₂ junction and (ii) an F₁/magnetic barrier (FB)/F₂ junction. The junctions in both cases lie in the xy-plane with the magnetizations in both ferromagnetic regions, F₁ and F₂ aligned in the z-direction. The charge carriers in the topological insulator have a Dirac like energy spectrum of a massive relativistic particle with the magnetization M playing the role of the mass. The gap opening is a special magneto feature of topological insulators. In an anti parallel alignment of the two magnetizations, the mass of the carriers is negative in the region where M is in the negative direction. The negative mass leads the behaviors of the magneto transport properties and the tunneling magneto resistance of these junctions to be quite different from those of graphene-based spin values.     

Spin-resolved edge states transport in a normal/ferromagnetic/normal topological insulator junction: The role of interface

The spin-resolved edge states transport in a normal/ferromagnetic/normal topological insulator (TI) junction is investigated numerically. It is shown that the transport properties of the hybrid junction strongly depend on the interface shape. For the junction with two sharp interfaces, a nonzero spin conductance can be generated besides the spin-split energy windows. Moreover, the axial symmetries of the in-plane spin conductance amplitude are broken. The underlying physics is attributed to the sharp-interface-induced quantum interference effect. However, for the hybrid junction with two smooth interfaces, a non-zero spin conductance can only be achieved in the spin-split energy windows. Further, the axial symmetries of the in-plane spin conductance amplitude recover. These findings may not only benefit to further apprehend the spin-dependent edge states transport in the hybrid TI junctions but also provide some theoretical bases to the application of the topological spintronics devices.     

Charge transport through ferromagnet/two-dimensional electron gas/d-wave superconductor junctions with Rashba spin-orbit coupling

Along the lines of Blonder, Tinkham and Klapwijk, we investigate the charge transport through ferromagnet/two-dimensional electronic gas/d-wave superconductor (F/2DEG/S) junctions in the presence of Rashba spin-orbit (SO) coupling and focus our attention on the interplay between spin polarization and spin precession. At zero spin polarization, the spin-mixing scattering resulted from Rashba SO coupling decreases the zero-bias conductance peak. Under spin polarization, spin precession introduces novel Andreev reflection, which competes with the effect of spin-mixing scattering. If the F layer is a half metal, the later effect is overwhelmed by that of novel Andreev reflection. As a result, the zero-bias conductance dip caused by spin polarization is enhanced, and at strong Rashba SO coupling, a split zero-bias peak is found in the gap. In an intermediate region where the two effects are comparable with each other, the zero-bias conductance shows a reentrant behavior as a function of Rashba SO coupling.     

Charge transport in the normal metal/diffusive ferromagnet/s-wave superconductor junctions

Charge transport in the normal metal/insulator/diffusive ferromagnet/insulator/s-wave superconductor (N/I/DF/I/S) junctions is studied for various situations solving the Usadel equation under the Nazarov's generalized boundary condition. Conductance of the junction is calculated by changing the magnitude of the resistance in DF, Thouless energy in DF, the exchange field in DF, the transparencies of the insulating barriers. We have found a new broad peak around zero voltage as well as zero bias conductance peak splitting and dip splitting.     

Spin-polarized transport and submillimetric microwave spectroscopy of solids

The problem of spin transport (spin transfer and localization in space by charge carriers) is considered from the standpoint of implementing this phenomenon in microelectronic devices based on novel physical principles. Experimental data are presented to confirm the possibility of creating extremely-high-frequency solid state microelectronic devices, operating in the millimetric and submillimetric wavelength range, which can be used as the main elements for spin informatics. These devices can be based on ferromagnetic semiconductor-nonmagnetic semiconductor junctions, the output parameters of which are controlled both by the transport current and by an external magnetic field.     

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.     

Josephson junctions based on c-axis oriented YBaCuO/PrBaCuO/YBaCuO trilayers

We have fabricated sandwich SNS (superconductor/normal metal/superconductor) junctions using in-situ grown c-axis oriented YBaCuO/PrBaCuO/YBaCuO trilayers. We observe supercurrents for PrBaCuO thicknesses up to 130 nm at 4.2 K. To confirm or rule out the presence of shorts through the barrier, the junction behaviour has been further characterised. Magnetic-field and PrBaCuO thickness dependences of the critical current, as well as a correct scaling with the junction area of both the critical current and the normal resistance, appear to indicate a reasonable uniformity for the barriers on the scale of the size of the junctions, typically 10 μm. These results suggest that either we are observing real c-axis transport in PrBaCuO or, if the behaviour is defect dominated, that the criteria commonly used to demonstrate good device behaviour should be applied carefully. The temperature dependence of the junction critical current and normal resistance are also reported and compared.     

Characterizing a high spin magnetic impurity via Andreev reflection spectroscopy

The ground state properties of a high spin magnetic impurity and its interaction with an electronic spin are probed via Andreev reflection. We see that through the charge and spin conductance one can effectively estimate the interaction strength, the ground state spin and magnetic moment of any high spin magnetic impurity. We show how a high spin magnetic impurity at the junction between a normal metal and superconductor can contribute to superconducting spintronics applications. Particularly, while spin conductance is absent below the gap for Ferromagnet-Insulator-Superconductor junctions we show that in the case of a Normal metal-High spin magnetic impurity-Normal Metal-Insulator-Superconductor (NMNIS) junction it is present. Further, it is seen that pure spin conduction can exist without any accompanying charge conduction in the NMNIS junction.     

Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions. The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon. It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived, the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG, while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect, in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations. Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices.     

Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions

Based on first-principles calculations, the bias-induced evolutions of hybrid interface states in π-conjugated tricene and in insulating octane magnetic molecular junctions are investigated. Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions. The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias-dependent. The transport calculations demonstrate that in the π -conjugated tricene junction, the bias-dependent hybrid interface states work efficiently for large current, current spin polarization, and distinct tunneling magnetoresistance. But in the insulating octane junction, the spin-dependent transport via the hybrid interface states is inhibited, which is only slightly disturbed by the bias. This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices, and the underlying role of conjugated molecular orbitals in the transport ability of hybrid interface states.     

On the calculation of the magnetoresistance of tunnel junctions with parallel paths of conduction

At the interfaces between the metallic electrodes and barrier in magnetic tunnel junctions it is possible for localized states to form which are orthogonal to the itinerant states for the junction, as well as resonant states that can form at the interfaces. These states form highly conducting paths across the barrier when their orbitals point directly into the barrier; these paths are in addition to those formed by the itinerant states across the entire junction. Most calculations of transport in magnetic tunnel junctions are made with the assumptions that the transverse momentum of the tunnelling electrons is conserved, in which case the itinerant electron states remain orthogonal to localized states. In principle it is possible to include diffuse scattering in both the bulk of the electrodes and the barrier so that the transverse momentum is not conserved, as well as the processes that couple localized states at the electrode-barrier interface to the itinerant states in the bulk of the electrodes. However, including these effects leads to lengthy calculations. Therefore, to assess the conduction across the barrier through the localized states that exist in parallel to the itinerant states we propose an approximate scheme in which we calculate the conductance of only the barrier region. While we do not take explicit account of either of the effects mentioned above, we do calculate the tunnelling through all the states that exist at the electrode-barrier interfaces by placing reservoirs directly across the barriers. To calculate the current and magnetoresistance for magnetic tunnel junctions (the junction magnetoresistance (JMR)) we have used the lattice model developed by Caroli et al. The propagators, density of states and hopping integrals entering the expressions for the current are determined by using the spin polarized scalar-relativistic screened Korringa-Kohn-Rostoker method that has been adapted to layered structures. By using vacuum as the insulating barrier we have determined with no adjustable parameters the JMR in the linear response region of tunnel junctions with fcc Co(100), fccNi(100) and bcc Fe(100) as electrodes. The JMR ratios that we find for these metal/vacuum/metal junctions are comparable with those measured with alumina as the insulating barrier. For vacuum barriers we find that tunnelling currents have minority- spin polarization whereas the tunnelling currents for th se electrodes have been observed to be positively (majority) polarized for alumina barriers and minority polarized for SrTiO 3 barriers. In addition to determining the JMR ratios in linear response we have also determined how the magnetoresistance of magnetic tunnel junctions varies with a finite voltage bias applied across the junction. In particular we have found how the shape of the potential barrier is altered by the applied bias and how this affects the current. Comparisons with data as they become available will eventually determine whether our approximate scheme or the ballistic Landauer-Büttiker approach is better able to represent the features of the electronic structure that control tunnelling in magnetic tunnel junctions.     

输运层势垒对双层结构器件复合发光的影响

通过分析双层结构器件复合发光的实际物理过程，建立了双层器件载流子输运与复合发光的多势垒的理论模型，计算并讨论了器件复合效率随外加电压及输运层势垒（包括势垒高度和宽度）的变化关系，该理论模型较好地解释实验现象。     

Negative Differential Resistance and Other Features of Spin-Dependent Electron Transport in Double-Barrier Hybrid Superconductor–Ferromagnetic Metal–Normal Metal Structures

Spin-dependent electronic transport is theoretically investigated for double-barrier hybrid structures S–IF–F–IF–N and S–IF–N–IF–N, where S is a superconductor; F and N are ferromagnetic and normal metals, respectively; and IF is the spin-active barrier. It is shown that in the case of strong superconducting proximity effect and sufficiently thin F layers, the differential resistance of such structures can become negative at some voltages, and the voltage dependence of the current can have an N-shaped form. Characteristic feature of the differential resistance is its asymmetric dependence on voltage, which is most clearly manifested at strong polarization of at least one of the barriers. The influence of impurity spin–orbit scattering processes in the N-layer located between the barriers is investigated. The study was carried out for the case of diffusion electron transport.     

Anisotropic spin-dependent thermopower and current in ferromagnetic graphene junctions

We study the spin-dependent thermoelectric transport through two-dimensional normal/ferromagnetic/normal/ferromagnetic/normal graphene (NG/FG/NG/FG/NG) junctions. It is found that both charge and spin thermopowers depend on the FGʼs magnetization direction and exhibit an anisotropic behavior. Interestingly, the spin thermopower can be as large as the charge thermopower and even can exceed the latter in magnitude. Moreover, the pure spin thermopower and spin current emerge in this device. The results obtained here suggest a feasible way of enhancing thermospin effects and generating the pure spin current in two-dimensional graphene.     

High-efficiency spin filtering in salophen-based molecular junctions modulated with different transition metal atoms

Based on the density functional theory and nonequilibrium Green's function methods, we investigate the spin transport properties of the molecular junctions constructed by a homologous series of 3d transition metal(II) salophens (TM-salophens, TM = Co, Fe, Ni and Mn) sandwiched between two gold electrodes. It is found that among the four molecular junctions only Co-salophen junction can act as an efficient spin filter distinctively. The conductance through Co-salophen molecular junction is dominated by spin-down electrons. The mechanism is proposed for these phenomena.     

Spin polarization of charge carriers and Andreev reflection in (LaCa)MnO/superconductor point contacts

Spin polarization of charge carriers in La_0.65Ca_0.35MnO₃ (LCMO) is studied using point-contact Andreev spectroscopy. Pb and MgB₂ are used to make superconducting electrodes. In all cases, the transport spin polarization obtained from the conductivity of LCMO/superconductor point contacts does not exceed 80–85%. Different models of the current flow through the superconductor-ferromagnetic metal contact and possible reasons for noncomplete spin polarization of a current in manganites are explored. The level of spin polarization observed in Sharvin contacts (contact area ～10⁴ Ų) is most naturally explained in terms of a model that suggests separation of the crystal into nanosized magnetic phases, only one of which is a ferromagnetic metal with full spin polarization of charge carriers.     

铁磁/有机半导体/铁磁系统的电流自旋极化性质研究

根据有机半导体中的电流自旋极化注入和输运实验现象，理论上研究了铁磁/有机半导体/铁磁系统的电流自旋极化性质.考虑到有机半导体的具体特性，从自旋扩散理论和欧姆定律出发，得到了系统的电流自旋极化率.假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子.通过计算发现，极化子为实现有机半导体中电流极化注入和输运的有效自旋载流子，即使它只占总载流子很少一部分.还进一步研究了自旋相关界面电阻和电导率匹配以及有机半导体长度等因素对系统电流自旋极化的影响. 关键词： 自旋电子学 自旋注入 有机半导体 极化子     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.