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1.
Nanowires of GeS(2) and GeSe(2) have been obtained by novel chemical routes involving the decomposition of organo-ammonium precursors containing super-tetrahedral Ge(4)S(10) and the dimeric Ge(2)Se(6) units.  相似文献   

2.
Glass Formation and Properties of Chalcogenide Systems. IX. On the Structure of GeS/GeS2 and GeSe/GeSe2 Glasses Mole volume, glass transition temperature, and coefficient of thermal expansion were measured on glasses prepared by standardized conditions. Near the composition Ge2S3 and Ge2Se3 the properties show a singularity or point of inflexion, respectively. Random models of structure are inconsistent with such a behaviour. A model of higher chemical order is proposed which can explain the observed dependence of the glass properties on composition and is in accordance with radial distribution studies.  相似文献   

3.
Narrow-band-gap IV-VI semiconductors offer promising optoelectronic properties for integration as light-absorbing components in field-effect transistors, photodetectors, and photovoltaic devices. Importantly, colloidal nanostructures of these materials have the potential to substantially decrease the fabrication cost of solar cells because of their ability to be solution-processed. While colloidal nanomaterials formed from IV-VI lead chalcogenides such as PbS and PbSe have been extensively investigated, those of the layered semiconductors SnS, SnSe, GeS, and GeSe have only recently been considered. In particular, there have been very few studies of the germanium chalcogenides, which have band-gap energies that overlap well with the solar spectrum. Here we report the first synthesis of colloidal GeS and GeSe nanostructures obtained by heating GeI(4), hexamethyldisilazane, oleylamine, oleic acid, and dodecanethiol or trioctylphosphine selenide to 320 °C for 24 h. These materials, which were characterized by TEM, SAED, SEM, AFM, XRD, diffuse reflectance spectroscopy, and I-V conductivity measurements, preferentially adopt a two-dimensional single-crystal nanosheet morphology that produces fully [100]-oriented films upon drop-casting. Optical measurements indicated indirect band gaps of 1.58 and 1.14 eV for GeS and GeSe, respectively, and electrical measurements showed that drop-cast films of GeSe exhibit p-type conductivity.  相似文献   

4.
The crystal structure of Mn2GeS4 was solved by X-ray diffraction, on a single crystal. It has the olivine type, orthorhombic Pnma, with a = 12.776, b = 7.441, c = 6.033Å; R = 0.038 for 956 independent reflections.  相似文献   

5.
Cationic and anionic species of heavier low-valent group 14 elements are intriguing targets in main group chemistry due to their synthetic potential and industrial applications. In the present study, we describe the synthesis of cationic (MCl(+)) and anionic (MCl(3)(-)) species of heavier low-valent group 14 elements of germanium(II) and tin(II) by using the substituted Schiff base 2,6-diacetylpyridinebis(2,6-diisopropylanil) as Lewis base (LB). Treatment of LB with 2 equiv of GeCl(2)·dioxane and SnCl(2) in toluene gives compounds [(LB)Ge(II)Cl](+)[Ge(II)Cl(3)](-) (1) and [(LB)Sn(II)Cl](+)[Sn(II)Cl(3)](-) (2), respectively, which possess each a low-valent cation and an anion. Compounds 1 and 2 are well characterized with various spectroscopic methods and single crystal X-ray structural analysis.  相似文献   

6.
Reaction of GeCl4 and CyPH2 leads to a range of products from which crystals of [CyPH3]+[GeCl3]- have been obtained. The major intermediate in this reaction, Cy(H)PGeCl3, can be obtained as the dominant product only when an excess of GeCl4 is used in the preparation. Similarly, crystals of [Ph2PH2]+[GeCl3]- have been obtained from reaction of Ph2PH and GeCl4(1 : 1). The structures of both primary and secondary phosphonium cations are reported. Aerosol-assisted and low-pressure chemical vapour deposition experiments using Cy(H)PGeCl3 as precursor lead to the deposition of thin films containing both germanium and phosphorus, contaminated with large amounts of oxygen. GeP has been identified as components of the film from bandgap measurements.  相似文献   

7.
Stability of Gaseous GeS2 For the reaction the ΔH°(298) = 33 kcal (138kJ) has been determined. This value has been obtained from chemical transport reactions as well as from mass spectrometric und thermogravimetric observations.  相似文献   

8.
For the title reaction, Cu/ZnO catalysts prepared from aurichalcite were more active than those prepared from other precursors. Selectivity to ethyl acetate over Cu/ZnO was much higher than that over Cu/SiO2 This revised version was published online in June 2006 with corrections to the Cover Date.  相似文献   

9.
Four perovskite-type complex oxides (LaNiO3, La2NiO4, LaCoO3 and La2CoO4) were successfully prepared using two sol-gel methods, the Pechini method (PC) and the citric acid complexing method (CC). The catalysts were characterized by XRD and TPR. After reduction, the activity of the catalysts in the CO2 reforming of methane was tested. Ni-based catalysts from La2NiO4 precursors were the most active and stable catalyst after calcination above 850 癈, which gave a methane conversion of 0.025 mmol/(g-s) for those prepared by the PC method and 0.020 mmol/(g-s) by the CC method. It was proposed that the well-defined structure and lower reducibility is responsible for the unusual catalytic behavior observed over the pre-reduced La2NiO4 catalyst.  相似文献   

10.
Chalcogenide perovskites have garnered interest for applications in semiconductor devices due to their excellent predicted optoelectronic properties and stability. However, high synthesis temperatures have historically made these materials incompatible with the creation of photovoltaic devices. Here, we demonstrate the solution processed synthesis of luminescent BaZrS3 and BaHfS3 chalcogenide perovskite films using single-phase molecular precursors at sulfurization temperatures of 575 °C and sulfurization times as short as one hour. These molecular precursor inks were synthesized using known carbon disulfide insertion chemistry to create Group 4 metal dithiocarbamates, and this chemistry was extended to create species, such as barium dithiocarboxylates, that have never been reported before. These findings, with added future research, have the potential to yield fully solution processed thin films of chalcogenide perovskites for various optoelectronic applications.  相似文献   

11.
The interaction along the Cu2GeSe3-Cr2Se3 join has been investigated using differential thermal and X-ray powder diffraction analyses. It has been found that the join is quasi-binary with a degenerate eutectic based on the Cu2GeSe3 compound. Two new quaternary compounds have been found along the join, namely, Cu2GeCr6Se12 and the γ phase. The phase is formed at 915°C by the peritectic reaction L + β-Cr2Se3 = γ and has the primary crystallization region up to 9 mol % Cr2Se3 in the temperature range 758–915°C. The room-temperature homogeneity range of the γ phase is 65–70 mol % Cr2Se3. The Cu2GeCr6Se12 compound is formed by the peritectoid reaction γ + β-Cr2Se3=Cu2GeCr6Se12 at 880°C, and its homogeneity range is 73–79 mol %. The X-ray reflections of the γ phase are indexed for the tetragonal crystal system with the unit cell parameters a = 12.043 Å and c = 9.180 Å. Samples with ferromagnetic properties are found in the homogeneity regions of both compounds.  相似文献   

12.
Graphitic carbon nitride (g‐C3N4), synthesised by pyrolysis of different precursors (dicyandiamide, melamine and urea) under varying reaction conditions (air and nitrogen gas) is subjected to electrochemical studies for the elucidation of the inherent catalytic efficiency of the pristine material. Contrary to popular belief, pristine g‐C3N4 shows negligible, if any, enhancement in its electrochemical behaviour in this comprehensive study. Voltammetric analysis reveals g‐C3N4 to display similar catalytic efficiency to the unmodified glassy carbon electrode surface on which the bulk material was deposited. This highlights the non‐catalytic nature of the pristine material and challenges the feasibility of using g‐C3N4 as a heterogeneous catalyst to deliver numerous promised applications.  相似文献   

13.
Chen MC  Li P  Zhou LJ  Li LH  Chen L 《Inorganic chemistry》2011,50(24):12402-12404
Two new noncentrosymmetric quaternary sulfides, La(2)Ga(2)GeS(8) (1) and Eu(2)Ga(2)GeS(7) (2), have been synthesized by high-temperature solid-state reactions. The structure change on going from 1 to 2 to the known Li(2)Ga(2)GeS(6) (3) nicely shows that the reduced cation charge-compensation requirement causes a decrease in the number of terminal S atoms per formula, which is a key to determining the connectivity of the GaS(4) and GeS(4) building units. Powder sample 2 exhibits a strong second-harmonic-generation (SHG) response of about 1.6 times the benchmark AgGaS(2) at 2.05 μm laser radiation, a non type I phase-matchable behavior, and a comparable transparency region. The SHG intensities of these compounds originate from the electronic transitions from S 3p states to La/Eu/Li-S, Ga-S, and Ge-S antibonding states according to Vienna ab initio simulation package studies.  相似文献   

14.
Reactions of K4[SnSe4], Na4[GeS4] or Ba2[GeSe4] with different 1,2‐diaminoethane (= en) coordinated complexes of CrCl3 ([Cr(en)2Cl2]Cl or [Cr(en)3]Cl3) in MeOH or aqueous solution yielded three novel compounds that contain complexes of Cr3+ with ortho‐chalcogenotetrelate anions [E′E4]4? (E′ = Ge, Sn; E = S; Se): the crystal structures of [K6(MeOH)9][Sn2Se6][Cr(en)2(SnSe4)]2 ( 1 ), [Na(H2O)4][Cr(en)3]2[GeS3OH]2[Cr(en)2(GeS4)] ( 2 ), and [Ba(H2O)10][{Cr(en)}2(GeSe4)2] ( 4 ) have been determined by means of single crystal X‐ray diffraction ( 1 : triclinic space group ; lattice dimensions at 203 K: a = 1175.7(2), b = 1315.3(3), c = 1326.7(3) pm, α = 61.99(3)°, β = 64.05(3)°, γ = 83.57(3)°, V = 1617.4(6)·106 pm3; R1 [I > 2σ(I)] = 0.0788; wR2 = 0.1306; 2 : monoclinic space group C2/c; lattice dimensions at 203 K: a = 2445.3(5), b = 1442.5(3), c = 1579.3(3) pm, β = 94.61(3)°, V = 5552.9(19)·106 pm3; R1 [I > 2σ(I)] = 0.0801; wR2 = 0.2046; 4 : triclinic space group ; lattice dimension at 203 K: a = 1198.4(2), b = 1236.8(3), c = 1297.5(3) pm, α = 65.69(3)°, β = 63.35(3)°, γ = 81.21(3)°, V = 1565.2(5)·106 pm3; R1 [I > 2σ(I)] = 0.0732; wR2 = 0.1855). 1 and 2 show the yet unprecedented complexation of transition metal ions by non‐bridging, single chalcogenotetrelate ligands to produce dinuclear, heterobimetallic complexes. Compound 2 contains the first structurally characterized complex with an ortho‐thiogermanate ligand. The formation of these compounds, and of a by‐product of 2 , [Cr(en)3][GeS3OH]·6H2O ( 3 : monoclinic space group C2/c; lattice dimensions at 203 K: a = 2396.8(5), b = 1463.4(3), c = 1740.1(4) pm, β = 132.99(3)°, V = 4463.8(15)·106 pm3; R1 [I > 2σ(I)] = 0.0462; wR2 = 0.1058), provides some insight in fundamental differences between the reaction behavior of [SnE4]4? anions one the one hand and [GeE4]4? anions on the other hand. The crucial role of the counterion charge becomes evident when comparing the structure motifs of the ternary anions in 1 and 2 with that observed in the Ba2+ compound 4 .  相似文献   

15.
Abstract

The stereospecific synthesis of methyl 3-O-benzoyl-6-O-(tert-butyldiphenylsilyl)-2-deoxy-α-d-erythro-hexopyranosid-4-ulose (5) - a Thromboxane B2 (TXB2) precursor -starting from D-galactose is described. Facile and established methods including selective benzoylation, oxidation-elimination and a stereocontrolled hydrogenation (Pd/charcoal) were employed effectively.  相似文献   

16.
17.
Raman spectrum of glassy GeS2 and low-resolution ones of polycrystalline α- and β-GeS2 were studied. It was shown that the medium range structure of glassy GeS2 is similar to the three-dimensional structure of β-GeS2. Our conclusion of similarity of medium range order of glassy GeS2 and β-GeS2 was also confirmed by detection of β-GeS2 microcrystals grown from glassy GeS2 at annealing temperature sufficiently below glass transition temperature.  相似文献   

18.
The reaction of 2-amino-4-dimethylamino-1-thia-3-azabutadienes 1 with f -bromoketones gave rise to 2-aminothiazoles 2 together with 2-( N , N -dimethylaminomethylenamino)thiazoles 3 . Competitive mechanisms are described. Furthermore, reaction of diene 1a with methyl f -bromoacetate or hydroxylamine- O -sulfonic acid yielded respectively 2-( N , N -dimethylaminomethylenamino)thiazolin-4-one 4 and 5-amino-1,2,4-thiadiazole 5 .  相似文献   

19.
20.
The reaction of selenium dioxide with o-hydroxyacetophenone semicarbazones gives 4-(2-hydroxyaryl)-1,2,3-selenadiazoles which undergo ready decomposition by the action of potassium carbonate to form benzofuran-2-selenolates. The latter can be alkylated with methyl iodide and benzyl chloride and arylated with 2,4-dinitrochlorobenzene. Intermediate formation of 2-(o-hydroxyphenyl)ethyneselenolate during decomposition of 1,2,3-selenadiazoles was proved by the isolation of methyl o-methoxyphenylethynyl selenide when the substrate was treated with potassium carbonate in the presence of methyl iodide.  相似文献   

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