共查询到17条相似文献,搜索用时 62 毫秒
1.
采用PECVD技术,在玻璃衬底上沉积μc-Si:H薄膜. 用拉曼光谱、SEM和UV分光光度计对不同沉积温度下沉积的薄膜的结构特性进行分析. 研究发现:沉积温度较低时,随着沉积温度的升高,薄膜的晶化率增加;当沉积温度超过某一温度值时,随着温度的进一步升高,薄膜的晶化率降低. 这时,表面反应由表面扩散限制转变为流量控制. 该温度值随着硅烷含量的降低而降低.
关键词:
氢化微晶硅薄膜
拉曼散射谱
晶化率
UV分光光度计 相似文献
2.
采用射频等离子体增强化学气相沉积法(RF-PECVD),在玻璃和硅衬底上以230—310Pa之间的沉积气压生长微晶硅(μc-Si:H)薄膜。利用拉曼光谱和红外光谱分析样品的微结构。结果发现样品的微结构强烈依赖于沉积气压,并且存在着最佳沉积气压250Pa,在此条件下的微晶硅薄膜晶化率为60.6%,氢含量为最小值9.1%。 相似文献
3.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明:随衬底温度的升高,材料 中的氢含量总的趋势下降;傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加(在1019cm-3量级);与高衬底温度相 比,低衬底温度制备的材料易于后氧化,这说明低温制备材料的稳定性不好.
关键词:
甚高频等离子体增强化学气相沉积
微晶硅薄膜
傅里叶变换红外吸收 相似文献
4.
研究了氢化微晶硅薄膜费米能级以上的带隙态密度分布与薄膜微结构关系.采用拉曼谱和红外谱表征不同H稀释比制备的微晶硅薄膜的微结构.薄膜带隙态密度分布由调制光电流的相移分析技术测得.采用三相模型(非晶相、晶相和界面相)分析了薄膜带隙态密度与薄膜微结构的关系.结果表明,材料的带隙态密度随着界面相的增加而增加,当界面体积分数达到最大时,薄膜的带隙态密度也最大,即材料的带隙态密度与界面体积分数正相关.
关键词:
带隙态
界面相
微晶硅
调制光电流 相似文献
5.
6.
采用高氢稀硅烷热丝化学气相沉积方法制备氢化微晶硅薄膜.其结构特征用Raman谱,红外透射谱,小角X射线散射等来表征.结果表明微晶硅的大小及在薄膜中的晶态比χc随氢稀释度的提高而增加.而从红外谱计算得到氢含量则随氢稀释度的增加而减少.小角X射线散射结果表明薄膜致密度随氢稀释度的增加而增加.结合红外谱和小角X射线散射的结果讨论与比较了不同相结构下硅网络中H的键合状态.认为随着晶化的发生和晶化程度的提高H逐渐移向晶粒表面,在硅薄膜中H的存在形式从以SiH为主向SiH2
关键词: 相似文献
7.
用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明,当反应气体中SiH4浓度在3.6%—50%之间大范围变化时,μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明,在SiH4浓度较大时制备的薄膜,其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH4气体高度分解,等离子体高度电离.
关键词:
微波电子回旋共振化学气相沉积
氢化微晶硅薄膜
拉曼散射
X射线衍射 相似文献
8.
9.
采用拉曼散射光谱和PR650光谱光度计对VHF-PECVD制备的微晶硅薄膜进行了结构表征和在线监测研究.结果表明:功率对材料的晶化率(χc)有一定的调节作用,硅烷浓度大,微调作用更明显;SiH*的强度只能在一定的范围内表征材料的沉积速率,功率大相应的速率反而下降;I[Hα*]/I[SiH*]强度比值反映了材料晶化程度,此结果和拉曼散射光谱测试结果显示出一致性;I[Hβ*]/I[Hα*]的强度比表明氢等离子体中的电子温度随功率的增大而逐渐降低.
关键词:
甚高频等离子体增强化学气相沉积
微晶硅
拉曼散射谱
光发射谱 相似文献
10.
11.
Effect of substrate temperature and pressure on properties of microcrystalline silicon films 下载免费PDF全文
In this paper intrinsic microcrystalline silicon films have been prepared by very high
frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with
different substrate temperature and pressure. The film properties were
investigated by using Raman spectra, x-ray diffraction, scanning
electron microscope (SEM), and optical
transmittance measurements, as well as dark conductivity. Raman results
indicate that increase of substrate temperature improves the microcrystallinity
of the film. The crystallinity is improved when the pressure increases from
50Pa to 80Pa and the structure transits from microcrystalline to amorphous
silicon for pressure higher than 80Pa. SEM reveals the effect of substrate
temperature and pressure on surface morphology. 相似文献
12.
采用VHF-PECVD技术制备了系列不同硅烷浓度和反应气压的微晶硅薄膜.运用拉曼散射光谱和 x射线衍射对制备的材料进行了结构分析.在实验研究的范围内,制备材料的晶化程度随硅烷 浓度的增加而降低.XRD的测试结果表明:制备的微晶硅材料均体现了(220)方向择优.应用在 电池的有源层中,制备出了效率达7.1%的单结微晶硅太阳电池,电池的结构是glass/ZnO/p( μc-Si:H)/i(μc-Si:H)/n(a-Si:H/Al),没有ZnO背反射电极,有源层的厚度仅为1.2μm.
关键词:
本征微晶硅薄膜
拉曼光谱
x射线衍射 相似文献
13.
The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells 下载免费PDF全文
This paper studies the effects of silane back diffusion in
the initial plasma ignition stage on the properties of
microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy
and spectroscopic ellipsometry, through delaying the injection of
SiH7280N, 7830G, 8115H http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057205 https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111771 back diffusion, microcrystalline silicon, thin film, Raman
crystallinity Project supported by the State Key
Development Program for Basic Research of China (Grant
No.~2006CB202601). This paper studies the effects of silane back diffusion in
the initial plasma ignition stage on the properties of
microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy
and spectroscopic ellipsometry, through delaying the injection of
SiH$_{4}$ gas to the reactor before plasma ignition. By comparing
with standard discharge condition, delayed SiH$_{4}$ gas condition
could prevent the back diffusion of SiH$_{4}$ from the reactor to
the deposition region effectively, which induced the formation of a
thick amorphous incubation layer in the interface between bulk film
and glass substrate. Applying this method, it obtains the
improvement of spectral response in the middle and long wavelength
region by combining this method with solar cell fabrication.
Finally, results are explained by modifying zero-order analytical
model, and a good agreement is found between model and experiments
concerning the optimum delayed injection time. back;diffusion;microcrystalline;silicon;thin;film;Raman;crystallinity This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon(μc-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry,through delaying the injection of SiH4 gas to the reactor before plasma ignition.Compared with standard discharge condition,delayed SiH4 gas condition could prevent the back diffusion of SiH4 from the reactor to the deposition region effectively,which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate.Applying this method,it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication.Finally,results are explained by modifying zero-order analytical model,and a good agreement is found between the model and experiments concerning the optimum delayed injection time. 相似文献
14.
15.
采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD (rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm2时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有
关键词:
HWCVD
OES
微晶硅 相似文献
16.
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜.对单室沉积掺杂层p材料后遗留在腔室中的硼对本征微晶i材料电学特性和结构特性的影响进行了详细研究.测试结果表明:单室沉积p层后的硼降低了微晶i层材料的暗电导,增加了材料的光敏性;由于硼对i层污染程度的不同,使得材料的激活能发生了变化;腔室中残余的硼也导致微晶硅薄膜的结晶状况恶化,同时弱化了材料的(220)择优取向.而在较高功率和较强氢稀释下制备的晶化率较高,(220)晶向明显择优的材料受硼污染影响相对减小.
关键词:
单室
甚高频等离子体增强化学气相沉积
微晶硅
硼 相似文献
17.
In this work we present a detailed structural of a series of B-doped hydrogenated microcrystalline silicon (μc-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and B-doped polycrystalline silicon (poly-Si) films produced by step-by-step laser crystallization process from amorphous silicon. The influence of doping on the structural properties and structural changes during the sequential crystallization processes were monitored by Raman spectroscopy. Unlike μc-Si:H films, that consist of a two-phase mixture of amorphous and ordered Si, partially crystallized sample shows a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. With increasing doping concentration the LO-TO phonon line in poly-Si shift to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. In μc-Si:H films, on the other hand, the Fano effect is not observed. The increase of doping in μc-Si:H films suppressed the crystalline volume fraction, which leads to an amorphization in the film structure. The structural variation in both μc-Si:H and poly-Si films leads to a change in hydrogen bonding configuration. 相似文献