Properties of MOS-structures based on anode-oxidized CdSnAs2

The properties of metal (Al, Au)-anodic oxide-CdSnAs₂ monocrystal structures are studied. It is established that MOS-structures using undoped CdSnAs₂ crystals show a high positive fixed charge in the anodic oxide (N_S 5·10¹² cm^–2) and high surface state density on the oxide-CdSnAs₂ boundary surface (N_SS 2·10¹³ cm^–2·eV^–1). In MOS-structures using diffusion-doped (copper) crystals the sign of the fixed charge is negative (N_S 10¹¹ cm^–2, N_SS 2·10¹² cm^–2·eV^–1). The latter structures show a definite photosensitivity and photomemory. The possibility of effective control of the fixed charge value within the oxide by illumination is shown. The surface state distribution over energy, time constant, and capture section is determined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 90–93, September, 1982.     

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

An investigation was made into the electrical and photoelectric properties of gallium arsenide with an initial electron density 5×10¹⁵–4×10¹⁷ cm^–3 doped with Mn in different thermodynamic diffusion regimes characterized by diffusion temperatures of 900 and 1000°C and arsenic vapor pressure 10^–2 and 10^–3 atm. The ionization energy and defect concentration were determined by a computer analysis of the equilibrium hole density determined from the Hall effect. Centers with ionization energy 0.08–0.10 eV were found, their concentration varying from 2×10¹⁹ to 2×10²⁰ cm^–3 depending on the diffusion temperature and the doping level of the original crystals. Data obtained by investigating the stationary intrinsic photoconductivity were used to determine a hole lifetime of t_p 10^–9 sec. The photoconductivity spectra were investigated in the range 0.5–2 eV at 77°K, and defects with ionization energy E_v + 0.6 eV were found in all samples. The impurity photoconductivity at wavelength 10.6 m was investigated. It was shown that GaAsMn can be used as a material for impurity photoresistors.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 15–19, March, 1981.     

The effect of an anisotropic pressure on the reverse currents and the lifetime of minority carriers in germanium diodes

The effect of pressure on the reverse currents, the lifetime of minority carriers and the charging capacitance of fused germanium diodes is considered. The p-n junctions are arranged in the (111) crystallographic plane. It is established that the reverse current increases rapidly with increased pressure. The lifetime of minority carriers falls by a factor of 1.5 to 2 up to a pressure of 3 · 10⁹ dyne/cm² and the charging capacitance increases. Starting from a pressure of 3 · · 10⁹ dyne/cm² the lifetime of minority carriers increases and the charging capacitance is reduced to a particular constant value. A qualitative explanation of the dependence of _e, Cj and I_rev is given.     

Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN

Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by atomic force microscopy, x-ray diffraction and Hall effect measurements. In the case of high electron mobility transistors heterostructures, the AlN mole fraction and the thickness of the AlGaN barrier employed were in the range of from 0.17 to 0.36 and from 7.5 to 30 nm, respectively. All structures were capped with a 2 nm GaN layer.Despite the absence of Ga droplets formation on the surface, growth of both GaN and AlGaN by RF-MBE on the GaN (0001) surfaces followed a step-flow growth mode resulting in low surface roughness and very abrupt heterointerfaces, as revealed by XRD. Reciprocal space maps around the reciprocal space point reveal that the AlGaN barriers are fully coherent with the GaN layer.GaN layers, n-doped with silicon in the range from 10¹⁵ to 10¹⁹ cm⁻³ exhibited state of the art electrical properties, consistent with a low unintentional background doping level and low compensation ratio. The carrier concentration versus silicon cell temperatures followed an Arhenius behaviour in the whole investigated doping range. The degenerate 2DEG, at the AlGaN/GaN heteroiterfaces, exhibited high Hall mobilities reaching 1860 cm²/V s at 300 K and 10 220 cm²/V s at 77 K for a sheet carrier density of 9.6E12 cm⁻².The two dimensional degenerate electron gas concentration in the GaN capped AlGaN/GaN structures was also calculated by self-consistent solving the Schrödinger–Poisson equations. Comparison with the experimental measured values reveals a Fermi level pinning of the GaN (0001) surface at about 0.8 eV below the GaN conduction band.     

Annealing behavior ot trap-centers in silicon containing A-swirl defects

The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE _c }-0.07 eV, _n=4.6×10^–16 cm², andE _c–0.49eV, _n=6.6×10^–16cm² are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE _c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE _c–0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE _c–0.49 eV, _n=2.9×10^–16cm² only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.     

Trap centers in Au-implanted MOS structures

Trap centers in the Si-SiO₂ interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 10¹²–3 × 10¹³ cm^–2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E _v +0.35 eV), the Au-acceptor (E _v +0.53 eV), and the Au-Fe complex (E _v +0.45 eV). The trap concentration profiles show that the Si-SiO₂ interface affects the Au concentration in a depth range of 1 m from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 10¹⁵ cm^–3.     

Origin of the defect states at ZnS/Si interfaces

Electrical characterisation of silicon surfaces contaminated by a zinc-sulphide overlayer has been carried out by forming Schottky diodes on the silicon after the ZnS has been etched off. The techniques include current-voltage, capacitance-voltage, and deep-level transieni spectroscopy. The Schottky diodes show clear memory of the presence of the ZnS overlayer and the electrical characteristics are far from ideal. Five deep levels in the sub-surface region of the silicon are detected, corresponding to the Zn⁺, Zn⁺⁺, S^–, S^–– states and probably to a Zn–B complex (p-type). Diffusion of the zinc and sulphur into the silicon is therefore confirmed and this diffusion is thought to create a compensated layer at the interface. These impurity states control the electrical characteristics of the surface in these diodes.     

Expansion velocities of 0.5 ps KrF excimer laser induced plasma by Doppler-shift analysis of pump and probe measurements

High gradient laser plasma is formed by focused KrF laser pulses (248.3 nm, 450 fs, 10¹³ W/cm²) on liquids (water, styrene) and solids (silicon, aluminum, and polyimide). The hydrodynamic expansion of the plasma was studied by measuring the blue Doppler-shift of reflected probe pulses which was produced by a delayed dye laser (496.6 nm, 450 fs). The Doppler-shift corresponds to the velocity of the reflecting surface of the plasma which is defined by the critical electron density. Expansion is investigated as a function of delay time and laser intensity. The reflecting surface of the plasma accelerates over 1–2 ps after the onset of the ablating laser pulse. With increasing intensity up to 2×10¹³ W/cm² the maximum average velocities are monotonously increasing up to 1–2×10⁵ m/s. PACS 52.38.Kd; 52.50.Jm, 52.70.Kz     

Microplasticity of silicon crystals

The low-frequency (1 Hz) internal friction (Q^–1) method was used to study the microplasticity of silicon whisker crystals grown by the method of chemical gas-transport reactions in a closed ampoule. A study was made of p-type crystals with the growth axis 111, 1–60 in diameter, working length 1–3 mm, both in the original state and after plastic ( 1%) deformtion by torsion. The temperature and amplitude dependences of Q^–1 were studied in 5·10^–5 torr vacuum. The amplitude of alternating vibrations was within the range 10^–5–10^–3 and the axial stresses were 10⁶–10⁷ N/m². The experimental results led to the conclusion that the microplasticity of undeformed silicon whiskers was due to heterogeneous nucleation of dislocations in stress concentration regions near surface defects, assisted by thermal fluctuations. In deformed whiskers the microplasticity was attributed to the nucleation and motion along dislocations of single and double thermal kinks in accordance with the Seeger model.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 88–93, May, 1980.     

Surface diffusion of potassium on theW (112) plane

Dependent on temperature and coverage, numerous spectral density functionsW(f) of the field-emission flicker noise of potassium adsorbed on the tungsten (112) plane were determined. The analysis in terms of the Timm and van der Ziel model gives surface diffusion energies between 0.55 and 0.83 eV for (average) coverages from 0.3 to 1.0 and diffusion coefficients between 2×10^–10 and 3×10^–9 cm²/s at 400 K. The results are compared with those obtained previously for the tungsten (111) region. Some conclusions as to the mechanism of diffusion and the manifestation of phase transitions between commensurate and incommensurate adlayer structures are discussed.On leave from Wrocaw University     

Distinctive features of creep in silicon whiskers

The phenomenon of creep in silicon whiskers has been studied in the temperature range 300–1100°K at stresses (0.1–5)·10⁸ N·m^–2. On the basis of the tests, analysis of the fine structure of the creep curves, and studies on the crystal structure, the conclusion is drawn that the creep observed in silicon whiskers is due to the heterogeneous nucleation of dislocations at stress concentration sites with the participation of thermal fluctuations.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 31–35, October, 1981.     

UV-CVD deposited SiNH films on InP: Optimization of the physico-chemical and interface properties

High quality silicon nitride films are deposited at low temperature on InP substrates by direct photolysis at 185 nm of a NH₃-SiH₄ gas mixture. The composition of the films is measured by nuclear analysis. The thickness and refractive index are obtained by ellipsometry at 632.8 nm. As-deposited and post annealed samples are electrically characterized: quasi-static I(V) at 5×10^–4 Hz and C(V) characteristics at 1 MHz are performed on InP MIS diodes structures in order to optimize bulk and interface properties. At 250° C and 4 Torr, it is found that the highest critical field (measured for a leakage current density of 10^–9 A/cm²) is obtained for the injected ratio [SiH₄]/[NH₃]=2%. For these conditions, the film is stoichiometric, the critical field is 4 MV/cm and the resistivity is 6×10¹⁵ cm. The interface state density (N _ss) on InP is deduced from Terman analysis. The annealing conditions and the surface cleaning of InP have been optimized in order to reduce the N _ss which is, for our best conditions, as low as 2×10¹¹ eV^–1 cm^–2.     

Rapid growth of ultra thin SiO2 films by a large-area electron beam

Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 31 (O₂/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Ų/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm² and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.     

Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Surface strain-hardening of iron alloys with an intense pulsed electron beam

Results are presented from study of surface strain-hardening and measurements of the structure of carbon (St. 45, U7A, 40Kh) and alloy (R6M5, Kh6VF) steels subjected to surface fusion by pulsed electron beams with the following parameters: electron energy 20–250 keV, pulse duration 5·10^–8–3·10^–4 sec, power density 10⁵–10⁹ W/cm³. It is shown that the microhardness of the surface of most alloys increases by a factor of 1.2–1.7 on quenched specimens and by a factor of 2.5–3.5 on unquenched specimens, depending on the regime. Microhardness increases in the surface layer due to quenching from the liquid state. An increase in electron energy from 40 to 250 keV with a pulse duration of 6·-10^–8 sec leads to a severalfold increase in the thickness of the strengthened layers and to a shift of the microhardness peak from the surface to a depth of 70 m. Here, microhardness reaches 2000 kgf/mm². This is due to an increase in the mean free path of the electrons in the metal and displacement of the energy-release maximum of the bundle deeper into the specimen.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, No. 6, pp. 38–43, June, 1985.     

An IR-Radiometer with Internal Signal Modulation

An infrared (IR) radiometer electrical circuit on the basis of photoresistors and photodiodes made of silicon doped with zinc (Si) as well as the narrow bandgap semiconductor alloy Pb_0.78Sn_0.22Te is presented. In the circuit suggested a bridge with the photoreceiver connected to the radiometer input and immediately fed by signal generators functions as a radiation modulator. The threshold sensitivity turned out on a recorder is 2·10^–13 W·Hz^–1/2 (for the n⁺–n–n⁺ structures made of Si, =0.8–l.2m, T=300K); 1.4·10^–15W·Hz^–1/2 (for p⁺–n–n⁺ S-diodes on the basis of Si, =0.8–1.2m, T=300K) and 10^–12W·Hz^1/2 (for photodiodes on the basis of Pb_0.78Sn_0.22Te, =8–13m, T=77K).     

Ac dielectric losses and electrical conductivity of vanadium-borate glass

The conductivity and capacitance of bulk and thin-film metal-glass-metal structures with the glass based on the composition: 32.56% V₂O₅, 46.18% B₂O₃, and 21.26% CaO (mole %) are measured in the frequency interval 2·10²–2·10⁴ Hz and the temperature interval 300–500°K. The frequency-temperature dependences of the real and imaginary parts of the complex dielectric constant calculated from the results of the measurements indicate the presence of the process of relaxation polarization in the glass under investigation. The parameters of the relaxation process are determined. It is proposed that the presence of the relaxation component of the conductivity and losses is due to localization of small-radius polarons (SRP) in the vicinity of positively charged defect centers (bound SRP).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 85–89.     

Pressure sensitivity of the peak current of gallium arsenide tunnel diodes

The influence of hydrostatic pressure on the peak current of gallium arsenide tunnel diodes is studied in this paper. Analysis of the experimental pressure dependence of the peak current for diodes with different levels of doping in the n region and comparison with the theory served as the basis for finding the size of the energy gap between the absolute and secondary minima at the point X₁ and the velocity of travel of the energy gap with pressure: ⁰=(0.37±0.01) eV; d/dP = –(15±2)·10^–6 eV/bar.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 74–77, September, 1976.     

Electrical properties of epitaxial heterostructures on a zinc sulfide base

An investigation is performed on the volt-ampere, volt-faraday, and photoelectrical characteristics of the epitaxial heterostructures n·ZnS-p-Ge, n-ZnS-p-GaAs, and n-ZnS-n-Si obtained by the method of vacuum evaporation in a quasiclosed volume. The heterotype structures are rectifying, and the current passage therein is described by the theories of space-charge-limited current. The quantity of surface states N_s.s=1.2·10¹²cm^–2 on the interface of n-ZnS-p-GaAs is computed, this being less than the theoretical value by almost two orders of magnitude. The heterostructures n-ZnS-n-Si were of two kinds. The volt-ampere characteristics of the structure of type I are rectifying with a rectification factor of 10⁴ at the 1 V level. The direct current had an exponential dependence and depended weakly on the temperature. The heterostructures had photosensitivity. Their no-load voltage was up to 0.2 V. The structures of type II had volt-ampere characteristics with double saturation. Starting from the model of two series-connected Schottky diodes, the heights of the barriers were computed for such heterostructures: Eg_ZnS=0.8–0.91 eV and E_Si=0.66–0.77 eV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 104–108, July, 1978.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.