Tight-binding study of ammonia and hydrogen adsorption on magnetic cobalt systems

The semi-empirical self-consistent tight-binding model of ammonia and hydrogen adsorption at Co(0001) and small Co clusters is used to study the chemisorption role in surface magnetism. The adsorbate choice has been suggested by recent experiments. At the Co(0001) surface the atomic magnetization is predicted to diminish locally by 0.26 μ_B due to an isolated hydrogen atom adsorption; for Co₁₃ clusters the change is somewhat smaller but less localized. At H(1×1)–Co(0001) the magnetization of surface Co atoms drops to 0.88 μ_B. The hydrogen magnetic moment is very small and couples antiferromagnetically to Co. Ammonia adsorption is found to reduce the Co atom magnetization locally by 0.1 μ_B or less. We discuss the possibility of adsorbate–metal antiferromagnetic coupling in more detail.     

Structure and composition of secondary phase particles in cobalt-doped TiO2 films

The microstructural properties of secondary phase particles formed in epitaxial Co_xTi_1−xO₂ anatase thin films grown on (0 0 1)LaAlO₃ by a reactive RF magnetron co-sputter deposition are examined. These films exhibit ferromagnetic behavior in magnetization measurements, showing a M–H loop at room temperature with a saturation magnetization on the order of 0.7 μ_B /Co. X-ray photoemission spectrometry indicates that the Co cations are in the Co²⁺ valence state. Cross-section electron microscopy reveals that a significant fraction of the cobalt segregates into Co–Ti–O secondary phase particles. Selected area electron diffraction shows that the secondary phase particles are cobalt-rich anatase. While the cobalt is concentrated in the segregated particles, local energy dispersive spectrometry indicates some Co throughout the film.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

Surface structure evolution during Sb adsorption on Si(1 1 1)–In(4×1) reconstruction

The Sb adsorption process on the Si(1 1 1)–In(4×1) surface phase was studied in the temperature range 200–400 °C. The formation of a Si(1 1 1)–InSb (2×2) structure was observed between 0.5 and 0.7 ML of Sb. This reconstruction decomposes when the Sb coverage approaches 1 ML and Sb atoms rearrange to and (2×1) reconstructions; released In atoms agglomerate into islands of irregular shapes. During the phase transition process from InSb(2×2) to Sb (θ_Sb>0.7 ML), we observed the formation of a metastable (4×2) structure. Possible atomic arrangements of the InSb(2×2) and metastable (4×2) phases were discussed.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

Observation of unrecoverable domains in two-dimensional-arrayed Pr0.5Ca0.5MnO3−y junctions

Two-dimensional-arrayed 14×14 sandwich-type junctions of Au–Pr_1−xCa_xMnO_3−y (PCMO, x=0.5)–SrRuO₃ were fabricated on SrTiO₃ (0 0 1) substrates. The resistivity–voltage (ρ–V) characteristics of each junction was measured by a two-probe method. The junctions that return to the insulating state after removing the voltage (recoverable) and the ones that remain metallic (unrecoverable) were found to co-exist in one PCMO film. The variation in the lattice constant of the PCMO film, rather than the variation of the composition, is thought to be related to the separation of recoverable–unrecoverable domains. Among several samples with a PCMO layer fabricated under various conditions, the junctions with thin PCMO layers deposited at low temperature showed a pronounced hysteresis in their ρ–V characteristics. The clear hysteresis and good crystallinity of PCMO films were correlated.     

Development of a 4–15 μm infrared GaAs hyperspectral QWIP imager

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4–15.4 μm wavelength region. This effort was a collaboration between NASA’s Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5–5.7 μm, Band 2; 8.5–10 μm, Band 3; 10–12 μm and Band 4; 13.3–14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four “broad” bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.     

Interface behavior study of WC92–Co8 coating produced by electrospark deposition

WC92–Co8 coating produced by electrospark deposition effectively improves the surface performance of the substrate. The behavior of the interface between the WC92–Co8 coating and the substrate is studied in this paper. The high-melting-point WC92–Co8 was deposited onto the surface of Ti alloy, and the coating was usually more than 50 μm thick. The surface of the coating is mainly composed of TiC and W₂C besides a small amount of W, and its micro hardness reaches HV1129. The coating dramatically improves the performance of the substrate.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

The influence of ingot annealing on the corrosion resistance of a PrFeCoBNbP alloy

The influence of the annealing time on the corrosion resistance of a Pr–Fe–Co–B–Nb alloy with the addition of 0.1 wt% P was investigated here using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The cast ingot alloys were annealed at 1100 °C for 10, 15 and 20 h. The specimens were immersed for 30 days in naturally aerated 0.02 M Na₂HPO₄ solution at room temperature, during which period the evolution of the electrochemical behavior was assessed using EIS. The results indicated that the corrosion resistance of the Pr₁₄Fe_balCo₁₆B₆Nb_0.1P_0.25 alloy was related to the annealing time and, hence, to its microstructure. Annealing at 1100 °C for 10 h was insufficient to eliminate the Fe- phase from the alloy microstructure, whereas annealing for 15 and 20 h removed an increasing amount of Fe- phase, thereby increasing the alloy's corrosion resistance.     

Nb/Au/(1 1 0)YBa2Cu3O7−δ Josephson junctions: evidence against atomic scaled “corner junctions”

We report on I–V characteristics for in situ formed Nb/Au/(1 1 0)YBa₂Cu₃O_7−δ (YBCO) Josephson junction, where the homoepitaxial (1 1 0)YBCO film shows ultra-smooth surface morphology. The field dependence of critical supercurrent I_c shows anisotropic large junction behavior with normal Fraunhofer patterns expected from BCS model of d_x²−y² wave superconductors. This strongly suggests that the Nb/Au/(1 1 0)YBCO junctions cannot be regarded as atomic scaled corner junctions, in contrast with (0 0 1)/(1 1 0)YBCO grain boundary junctions to show “π-junction” with a pronounced dip near zero fields in field modulation of I_c.     

Domain wall pinning in polycrystalline perovskite La0.7Sr0.3MnO3

Reversible and irreversible domain wall (DW) motions have been investigated in La_0.7Sr_0.3MnO₃ ceramic samples using frequency-response complex permeability with various amplitudes of AC field. We also examine the effects of temperature in the range from 293 to 368 K and transverse DC magnetic field with a maximum of 4.40×10⁵ A/m on the real part of permeability (μ′). Two relaxations corresponding to reversible wall motions and domain rotations occur in low and high frequency regions, respectively. The irreversible DW displacements can be activated as the amplitude larger than the pinning field of 3 A/m, leading to an increase in μ′. The μ′ obeys a Rayleigh law at the temperature below 343 K or under DC field of less than 4.22×10⁴ A/m. The Rayleigh constant η increases from 5.45×10⁻² to 1.54×10⁻¹ (A/m)⁻¹ as the temperature rises from 293 to 343 K, and η decreases from 5.58×10⁻² to 3.67×10⁻² (A/m)⁻¹ with increasing DC field from 1.99×10³ to 4.22×10⁴ A/m.     

Magnetization and magnetic susceptibility of GdH3

Magnetic susceptibility measurement in the range 1.4 to 4.2 K reveal a maximum in χ at 3.65 K, and two maxima in Δχ/ΔT, one at 3.32 K (assumed to be T_N), and another at 1.8 K. High field magnetization measurements indicate a saturation moment of 7 μ_B.     

Low-field negative magnetization and coercive-field magnetization reversal in transition metal chalcogenides; Cr2FeSe4 magnetic structure from neutron diffraction

Low-field negative magnetization, of the order of −10⁻¹ emu/g-Oe, from 4.2 K up to room temperature and higher (350 K), and coercive-field magnetization reversal are both present in Cr_(3−x)Fe_xX₄ for X=S, Se, Te and x=0 to 3, and for Cr₅Te₈ and Cr₇Te₈. For Cr₂FeSe₄ the zero-field-cooled (ZFC) magnetization is negative for 5 Oe and below. To obtain a more detailed knowledge of the magnetic phases involved in the observed magnetization versus temperature M(T) curves, we obtained and studied neutron diffraction (n.d.) scans on the compound Cr₂FeSe₄, taken at 14 temperatures from 4.2 to 300 K. For this same n.d. sample, the temperature for magnetization reversal of value −3×10⁻⁴ emu/g-Oe is 80 K in 40 Oe applied field, then the reversal disappears for 65 Oe applied field. The complex magnetic interactions responsible for this reversal are revealed in the hysteresis curves.     

Magnetic anisotropic properties in Fe3O4 and CoFe2O4 ferrite epitaxy thin films

Epitaxial thin films of Fe₃O₄ and CoFe₂O₄ on MgO (0 0 1) substrates were grown by molecular beam epitaxy at low temperature growth process. Magnetization and hysteresis loop of both films were measured to investigate magnetic anisotropic properties at various temperatures. Anomalous magnetic properties are found to be correlated with crystalline, shape, and stress anisotropies. The Fe₃O₄ film below Verwey structural transition has a change in crystal structure, thus causing many anomalous magnetic properties. Crystalline anisotropy and anomalous magnetic properties are affected substantially by Co ions. The saturation magnetization of Co–ferrite film becomes much lower than that of Fe₃O₄ film, being very different from the bulks. It indicates that the low temperature growth process could not provide enough energy to have the lowest energy state.     

Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f₀, of 3.2 THz (93 μm) was obtained by using n-type GaAs emitter doped to 1 × 10¹⁸ cm⁻³ and Al_0.04Ga_0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10–93 μm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are 19% and 5.5 × 10⁸ Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K.     

Magnetoresistance in the magnetization reversal process of micropatterned Co wires

We measured the magnetoresistance (MR) and magnetization of Co wires of various widths in the range from 0.3 to 200 μm. The observed width dependence of some characteristics of MR is attributed to the change of the domain structure. As the width decreased below 1 μm, an abrupt jump appeared in the longitudinal MR. This can be interpreted as due to an abrupt reversal of the overall magnetization. The measured longitudinal MR was compared with the calculation in the Stoner–Wohlfarth model.     

Picosecond nonlinear optical response of Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Well-crystallized Ba_0.5Sr_0.5TiO₃ thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10⁻³ Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba_0.5Sr_0.5TiO₃ rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba_0.5Sr_0.5TiO₃ thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 5.04 × 10⁻⁶ cm²/kW and β = 3.59 × 10⁻⁶ (m/W), respectively.     

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Diffusion length of Ga on the GaAs(0 0 1)-(2×4)β2 is investigated by a newly developed Monte Carlo-based computational method. The new computational method incorporates chemical potential of Ga in the vapor phase and Ga migration potential on the reconstructed surface obtained by ab initio calculations; therefore we can investigate the adsorption, diffusion and desorption kinetics of adsorbate atoms on the surface. The calculated results imply that Ga diffusion length before desorption decreases exponentially with temperature because Ga surface lifetime decreases exponentially. Furthermore, Ga diffusion length L along and [1 1 0] on the GaAs(0 0 1)-(2×4)β2 are estimated to be and L_[110]200 nm, respectively, at the incorporation–desorption transition temperature (T860 K).     

RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

Ohmic contacts to p-type CuCrO₂ using Ni/Au/CrB₂/Ti/Au contact metallurgy are reported. The samples were annealed in the 200–700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of 2 × 10⁻⁵ Ω cm² was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB₂ diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.