Electromagnetic properties of the graphene junctions

The directional diagram of the charge transport through a 'clean' and short monolayer graphene junction GJ exposed to an external electromagnetic field had been examined. We find that the photon-assisted resonant chiral tunneling across the monolayer graphene junction (GJ) causes an angular redistribution of the tunneling current density. The directional a.c. transport phenomena may be utilized in novel nanoelectronic devices working in the THz frequency range.     

Valley splitting and anomalous Klein tunneling in borophane-based n-p and n-p-n junctions

We analytically investigate the transport properties of electron in borophane-based n-p and n-p-n junctions. When the electron beam in n region go through the n-p junction, the beam will be split into two valley-dependent beam in p region. This comes from the valley-dependent refraction angle induced by the anisotropic band structure of borophane. Interestingly, the behavior of valley splitting can be generated in a borophane-based n-p junction naturally without any external modulation methods. Generally, the Klein tunneling is described as the perfect transmission at a zero incident angle of electron regardless of the width and height of potential barrier. However, in a borophane-based n-p-n junction, the anomalous Klein tunneling, i.e., the perfect transmission exists at a nonzero incident angle, is found due to the anisotropic band structure of borophane. Our work designs an alternative valley splitter and provides an insight into the understanding of the Klein tunneling.     

Gate-tunable valley-filter based on suspended graphene with double magnetic barrier structures

We theoretically investigate the effects of strain-induced pseudomagnetic fields on the transmission probability and the ballistic conductance for Dirac fermion transport in suspended graphene. We show that resonant tunneling through double magnetic barriers can be tuned by strain in the suspended region. The valley-resolved transmission peaks are apparently distinguishable owing to the sharpness of the resonant tunneling. With the specific strain, the resonant tunneling is completely suppressed for Dirac fermions occupying the one valley, but the resonant tunneling exists for the other valley. The valley-filtering effect is expected to be measurable by strain engineering. The proposed system can be used to fabricate a graphene valley filter with the large valley polarization almost 100%.     

Probing semiconductor gap states with resonant tunneling

Tunneling transport through the depletion layer under a GaAs {110} surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling probability through the depletion layer mediated by individual shallow acceptors. The STM experiment probes, for appropriate bias voltages, evanescent states in the GaAs band gap. Energetically and spatially resolved spectra show that the pronounced anisotropic contrast pattern of shallow acceptors occurs exclusively for this specific transport channel. Our findings suggest that the complex band structure causes the observed anisotropies connected with the zinc blende symmetry.     

A comparison of the transport properties of bilayer graphene,monolayer graphene,and two-dimensional electron gas

We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors (the two-dimensional electron gas (2DEG)). It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.     

Anisotropic Transport on Monolayer and Multilayer Phosphorene in the Presence of an Electric Field

We demonstrate theoretically the anisotropic quantum transport of electrons through an electric field on monolayer and multilayer phosphorene. Using the long-wavelength Hamiltonian with continuum approximation, we find that the transmission probability for transport through an electric field is an oscillating function of incident angle, electric field intensity, as well as the incident energy of electrons. By tuning the electric field intensity and incident angle, the channels can be transited from opaque to transparent. The conductance through the quantum waveguides depends sensitively on the transport direction because of the anisotropic effective mass, and the anisotropy of the conductance can be tuned by the electric field intensity and the number of layers. These behaviors provide us an efficient way to control the transport of phosphorene-based microstructures.     

Anisotropic mechanical properties and Stone-Wales defects in graphene monolayer: A theoretical study

We investigate the mechanical properties of graphene monolayer via the density functional theoretical (DFT) method. We find that the strain energies are anisotropic for the graphene under large strain. We attribute the anisotropic feature to the anisotropic sp² hybridization in the hexagonal lattice. We further identify that the formation energies of Stone-Wales (SW) defects in the graphene monolayer are determined by the defect concentration and also the direction of applied tensile strain, correlating with the anisotropic feature.     

The mechanical flexibility,electronic structure and carrier mobility of monolayer GeP: A first principles study

Inspired by successful exfoliation in experiment, we explore mechanical, electronic and transport properties of GeP monolayer using first-principles calculations. It is found that the cleavage energy of GeP monolayer is ∼0.39 J/m², verifying it can be feasibly extracted from its bulk form. The calculated stress-strain relation reveals that monolayer GeP can withstand a tensile stress and strain up to 14.88 GPa and 28%, respectively. The band structure calculations indicate the monolayer GeP possesses an indirect band gap ∼2.28 eV, which can be reduced to 0.43 eV and experiences an indirect-direct transition when axial strain is applied. Besides, the effective masses can be dramatically tuned by strain. The predicted carrier mobilities of GeP monolayer are directionally anisotropic and the electron mobility in x direction exhibits high carrier mobility up to 1242.09 cm² V⁻¹ S⁻¹. Therefore, GeP monolayer has great potential for applications in high performance flexible field-effect transistors and optoelectronic devices.     

Anisotropic quantum transport in monolayer graphene in the presence of Rashba spin–orbit coupling

We have studied spin-dependent electron tunneling through the Rashba barrier in a monolayer graphene lattices. The transfer matrix method, have been employed to obtain the spin dependent transport properties of the chiral particles. It is shown that graphene sheets in the presence of Rashba spin–orbit barrier will act as an electron spin-inverter.     

The resistance of single atomic steps in ultrathin Pb nanowires on Si(557)

We studied the local electronic transport properties of a monolayer thick Pb wire by local potentiometry with the tip of a tunneling microscope. 50-nm-wide wires on bare Si(557) were generated by direct writing with an electron beam in an ultrathin film of SiO₂ using the process of electron-beam-induced selective stimulated thermal desorption of oxygen (EBSTD) in combination with a shadow-mask technique and macroscopic TiSi₂ contacts. The resistivity of this wire agrees well with expectations derived from anisotropic monolayer thick Pb films on Si(557). Although small Pb clusters nucleated during annealing and desorption of excess Pb, they had a negligible effect on the local resistive properties of the wire. Steps in the substrate of atomic height apparently do not interrupt the conducting path, but due to local scattering at step edge states increase the local resistivity by more than one order of magnitude.     

In-plane and perpendicular tunneling through InAs quantum dots

A Schottky diode with InAs dots in the intrinsic GaAs region was used to investigate perpendicular tunneling (in growth direction) through InAs quantum dots (QDs). At forward bias conditions electrons tunnel from the ohmic back contact into the metal Schottky gate. Peaks appear in the differential conductance when a QD level comes into resonance with the Fermi-level of the n-doped region. The observed tunneling features are attributed to electron transport through the s- and p-shell of the InAs islands. In our in-plane tunneling experiments the islands were embedded in the channel region of an n-doped GaAs/AlGaAs HEMT-structure. In order to study tunneling through single InAs islands, a quantum point contact was defined by lithography with an atomic force microscope and subsequent wet-chemical etching. In contrast to unpatterned devices sharp peaks appear in the I–V characteristic of our samples reflecting the transport of electrons through the p-shell of a single InAs QD.     

Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/S) experiments and density functional theory (DFT) calculations, we systematically investigate the electronic properties of the strained CuSe monolayer on the Cu(111) substrate. Our results show the semiconducting feature of CuSe monolayer with a band gap of 1.28 eV and the 1D periodical modulation of electronic properties by the 1D moiré patterns. Except for the uniaxially strained CuSe monolayer, we observed domain boundary and line defects in the CuSe monolayer, where the biaxial-strain and strain-free conditions can be investigated respectively. STS measurements for the three different strain regions show that the first peak in conduction band will move downward with the increasing strain. DFT calculations based on the three CuSe atomic models with different strain inside reproduced the peak movement. The present findings not only enrich the fundamental comprehension toward the influence of strain on electronic properties at 2D limit, but also offer the benchmark for the development of 2D semiconductor materials.     

The discrete ordinates method for anisotropic scattering in the neutron transport theory: The critical sphere problem

The spherical harmonics method for anisotropic scattering in the neutron transport theory related to the critical sphere problem was investigated by Yildiz [The spherical harmonics method for anisotropic scattering in neutron transport theory: the critical sphere problem. JQSRT 2001;71:25-37]. Some numerical results and figures that they provided are incorrect. The correct numerical results for the critical radius are obtained and tabulated for different scattering parameters by using the discrete ordinates method.     

Transport properties through double-magnetic-barrier structures in graphene

We study electrons tunneling through a double-magnetic-barrier structure on the surface of monolayer graphene.The transmission probability and the conductance are calculated by using the transfer matrix method.The results show that the normal incident transmission probability is blocked by the magnetic vector potential and the Klein tunneling region depends strongly on the direction of the incidence electron.The transmission probability and the conductance can be modulated by changing structural parameters of the barrier,such as width and height,offering a possibility to control electron beams on graphene.     

Selective analysis of molecular states by functionalized scanning tunneling microscopy tips

Selective analysis of molecular states in scanning tunneling microscopy (STM) has so far been achieved in a few cases by tuning the bias range of the STM in high-resolution measurements. Correspondingly, perylene adsorbed in a close-packed monolayer on Ag(110) is imaged mainly through the pi states of the molecule. By contrast, functionalizing the STM tip with a perylene molecule leads to a mismatch between the energy levels of the STM tip and the molecule adsorbates and, instead, images only the metal states of the underlying silver surface. The observation opens a route for better energy selectivity in electron transport measurements through organic interfaces.     

半导体超晶格系统中的磁电调控电子自旋输运研究

通过采用转移矩阵方法求解自旋电子隧穿过程,理论研究了半导体超晶格系统中电子自旋输运的磁电调控行为.结果表明：仅对超晶格系统施以磁调制,隧穿系数将出现自旋分裂,随磁场增强,电导自旋极化率变大且展宽于费米能区;若选取不变磁场情况,同时施以间隔周期电场调制,超晶格的电子极化率将有更为显著地提高.进一步发现,随电场强度的改变,电子自旋输运行为显然存在两个明显不同区域,下自旋电子将在不同调制区域表现为不同的变化趋势.然而,若对周期磁超晶格施加间隔两周期的电调制,自旋电导输运的临界行为消失,电导极化率在高能区的共振峰 关键词： 半导体超晶格 自旋输运 磁电调控     

Electrochemical annealing and its relevance in metal electroplating: an atomistic view

Using electrochemical scanning tunneling microscopy we have studied the decay of monolayer high islands on Au(001) electrodes as a function of electrode potential and as a function of the specifically adsorbed ion on the surface. We find that island decay is diffusion-limited and transport rates depend strongly on electrode potential and on the specifically adsorbed ion, an effect qualitatively known for long now. In this study we quantitatively investigate the transport rates and find values for the relevant transport energy barriers in the different electrolytes. PACS 68.37.Ef; 68.37.-d; 68.43.Jk; 68.35.Fx; 68.35.Md;68.35.-p; 68.08.-p     

Perfect Narrow-Band Absorber of Monolayer Borophene in All-Dielectric Grating Based on Quasi-Bound State in the Continuum

Borophene has the unique optical properties of two-dimensional materials and its own anisotropic characteristics. This work proposes a perfect narrow-band absorption structure to enhance the interaction of light with the monolayer borophene inserted into two different dielectric gratings. The structure efficiently improves absorption efficiency based on the quasi-bound states in the continuum (Q-BIC). The absorption characteristics are numerically simulated and theoretically analyzed by using the rigorous coupled-wave analysis (RCWA) method and the finite element method (FEM). The absorption efficiency of the monolayer borophene is high, up to 99.18% with a full-width at half maximum (FWHW) of 0.62 nm, achieving nearly perfect narrow-band absorption. Moreover, the mechanism of enhanced absorption of monolayer borophene is verified by the coupled mode theory (CMT), which indicates that the nearly perfect absorption is also derived from the critical coupling. At the same time, the influence of the thickness and width of the two layer dielectric structure on the absorption efficiency is theoretically analyzed. Furthermore, due to the anisotropic optical properties of the structure for TE and TM polarized light, a narrow-band polarization plate or sensor can be realized. The structure designed provides a new possibility to enhance the interaction between monolayer borophene and light.     

Influence of fillers concentration on electrical properties of polystyrene matrix doped by gold nanoparticles and 8HQ

The analysis of the electrical properties of polystyrene films containing gold nanoparticles capped with 1-dodecanethiol and 8-hydroxyquinoline molecules is reported. The conductivity of the nanocomposite as a function of the doping level has been investigated both in planar and stacked configurations. While the former configuration evidenced low field tunneling between nanoparticles in the polymer matrix, stacked devices allowed us to investigate the main phenomena ruling the transport properties when switching effects are present close to critical electric fields. In particular, through the analysis of current-voltage characteristics we studied the charge transport at different fillers concentrations and sketched a physical picture of conductivity in such nanocomposite systems.     

Dwell time in one-dimensional graphene asymmetrical barrier

The authors have investigated theoretically the dwell time of Dirac fermions tunneling through electrostatic square barrier in monolayer graphene, including asymmetrical and symmetrical potential barriers. It is found that the incident angle determines the critical incident energy. When the incident energy is larger than the critical incident energy, the dwell time saturate with the increase of the barrier thickness. But when the incident energy is smaller than the critical incident energy, the dwell time oscillates with the increase of the barrier thickness. The behaviors of oscillation and saturation of the dwell time are related with the transmission probability. These results may be helpful for the basic physics and potential application of graphene based electronic devices.