Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes

GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional reflector covers the p-type contact. The n-type contact is a Ti/AI planar film with a 10-μm-width Ti/AI stripe. The Ti/AI stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.     

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2.     

InGaN基发光二极管和激光二极管

在InGaN发光二极管中,尽管存在着大量的位错,但其效率还是相当高的.用InGaN作为有源层是很重要的.在InGaN基LED的情况下,为产生光发射需要较高的激发功率.横向大面积外延生长的GaN激光二极管(LDs)是在厚的GaN衬底上外延制备成的.在温度250℃、30mW输出的连续工作状态下,其工作电流小于42mA,600℃、30mW输出的连续工作状态下的寿命约为15 000小时.这些结果表明,螺旋位错密度的降低延长了激光二极管的寿命.此外,良好的散热也是很重要的.     

Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.     

激光二极管泵浦的高重复频率Nd：YAG激光器

报道两个１．５Ｗ连续激光二极管端面泵浦的声光调ＱＮｄ：ＹＡＧ激光器，输出激光脉冲的最高重复频率为３０ｋＨｚ重复频率１ｋＨｚ时，最窄脉宽为１２ｎｓ，最高峰值功率为１２．１ｋＷ。     

用ZCTC晶体倍频半导体激光的紫光输出

报道了新型金属络合物非线性光学材料ZCTC（硫氰硫锌镉）晶体的光学性质。测量了ZCTC晶体的折射率,计算了其相位匹配角度。进行了半导体激光（LD）室温下直接倍频实验。当808nm基频GaAlAs半导体激光功率为473mW时,获得了390μW、4040μnm紫光输出。实验表明ZCTC晶体是一种优良的半导体激光倍频紫外非线性光学材料。     

Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity

We have developed highly reliable etched-mirror laser diodes using a dry etching method. The lasers without facet-coating have been operating stably over 2500 h under automatic-power control (APC) at a power of 3 mW/facet at 50°C. The gain-guided laser diodes with a cylindrical-mirror cavity (CMC) have coaxial mirrors and a fan-shaped stripe structure. By decreasing the curvature radius of the inner facet or increasing the stripe width of the inner facet, the beam waist parallel to the junction plane can be moved outside of the laser diode, while the beam waist perpendicular to the junction plane stops at the mirror facet. A particular CMC laser has a low astigmatism of 4.1 μm and a low relative intensity of noise (RIN) less than –134 dB/Hz at 4 mW under 0–1% optical feedback without high frequency current superposition.     

Analysis of the Characteristics of Laser and Superluminescent Diodes

It is shown that superluminescent diodes rank below laser diodes in energy characteristics, but they have a wider emission spectrum and lower noise level. The amplitude-frequency and noise characteristics of the laser diode correlate with each other, whereas there is no such correlation for the superluminescent diode. The photon density distribution along the active area is more homogeneous for the laser diode than for the superluminescent one. Presented at the 5th International Scientific-Technical Conference “Quantum Electronics,” November 22–25, 2004, Minsk, Belarus. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 5, pp. 689–693. September–October, 2005.     

Self-Consistent Model and Numerical Analysis of VCSEL''s Laser Diodes

A self-consistent model of vertical-cavity surface-emitting lasers (VCSEL's) is presented in this paper, in which the carrier diffusion rate equation, the photon density rate equation, and the thermal conduction equation are considered simultaneously. The nonuniform heat flux density distribution in the active region due to the current-spreading effect is taken into account. The effects of temperature on gain and transparency carrier density are also included in this model. It is nonlinearly and self-consistently solved in the Matlab environment. The transient and lateral distribution characteristics of the carrier and photon densities and the junction temperature are investigated. Some interesting results are gotten and analyzed.     

领结型纳米银金属阵列对氮化镓基发光二极管光提取效率的影响

为了提升氮化镓(GaN)基发光二极管(Light Emitting Diode,LED)的发光效率,设计工艺简单且成本低廉的领结型纳米银金属阵列,并将该结构集成于GaN基发光二极管的表面,在不破坏外延结构的情况下通过激发局域表面等离激元效应有针对性地提升不同波段发光二极管的光提取效率.利用时域有限差分法系统地模拟计算不...     

Methods for Switching Radiation Polarization in GaAs Laser Diodes

Technical Physics - Operation modes of laser structures with controlled polarization of light have been studied and the results of measuring polarization characteristics are presented. The...     

Design and Analysis of Compact Directionally Coupled Bistable Laser Diodes

A compact optical flip-flop with a directional coupler has been designed and analyzed. Using a narrow gap directional coupler, we have predicted the device length could be reduced down to 500 μm from 1300 μm.     

LD光束在自聚焦透镜中的传输特性

基于分析激光二极管光束传输特性，运用厄米-高斯光束描述其远场分布．将自聚焦透镜用于激光二极管的光束整形，用2阶传输矩阵描述自聚焦透镜．运用Collins衍射积分公式，分析了LD光束在自聚焦透镜中传输场分布的解析表达式．在此基础上，数值计算了一种LD光束在自聚焦透镜中场分布．该模型结构简单，可用于分析光束传输特性和设计光束整形系统．     

提高LED光提取效率的研究

通过模拟计算的方法分析了倒装结构LED中衬底材料折射率及厚度对光提取效率的影响,并在此基础上提出一种新的菱形结构.结果表明:该菱形结构可大幅度提高LED光提取效率,在使用Si、蓝宝石、SiC作为芯片衬底材料时,菱形结构的光提取效率分别提高到传统方形结构的1.51、2.03、3.65倍.     

紫激光作用下四甲基硅多光子电离TOF质谱研究

本文采用超声分子束技术，以飞行时间质谱仪，在３９６～３８７ｎｍ内的紫激光作用下对四甲硅进行了多光子电离飞行时间质谱的研究，在较高在激光能量作用下检测到了Ｓｉ（ＣＨ３）＾＋ｎ（ｎ＝１，２，３，）、Ｓｉ＾＋及Ｃ＾＋２等多种离子的信号，在较低的激光能量作用下只检测到了Ｓｉ＾＋、Ｃ＾＋２等离子的信号，表明四甲基硅在不同激光能量作用下经历了不同的多光子电离过程。     

All-Optical Switching Using Fabry-Perot Laser Diodes(Invited paper)

In this paper, we investigate all-optical packet switching using a multi-wavelength mutual injection-locked Fabry-Perot laser diode. We observe error-free packet-switching of a 10 Gb/s signal with an extinction ratio of 16.9.     

A Traveling-Wave Model of Laser Diodes with Consideration for Thermal Effects

We investigate the static and dynamic thermal effects using the large-signal traveling-wave model of laser diodes. To cope with the substantial difference in the time constants of the thermal and the optical processes, a simple and efficient iteration method is proposed and demonstrated. Therefore instead of following the time sequence constrained by the finite difference time interval, by the iteration method, we can easily locate the equilibrium point of both the thermal and optical states. Both static and transient states of a laser diode with consideration of the thermal effects are simulated. The various thermal time constants of directly modulated distributed feedback lasers observed recently are explained based on the thermal traveling-wave model.     

Bistable Optical Devices Using Laser Diodes Coupled to Interference Filters

A bistable optical device was demonstrated by using the longitudinal mode hopping of the laser diode and the narrow transmission spectrum of an interference filter. The device is capable of converting changes in the wavelength of the laser diode into changes in intensity by transmitting it through the filter. Exclusive OR operation was observed with the use of triple signal outputs. In addition, an optical switch-off phenomenon was confirmed by directly injecting a pulse 500 ps wide into an external dye laser.