Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor(FET) terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz~(1/2) for the bare detector chip to 76 pW/Hz~(1/2) at340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the onchip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency.     

A High Performance Terahertz Waveguide Detector Based on a Low-Barrier Diode

A Schottky barrier diode with low-barrier is presented,based on which a terahertz waveguide detector working at500-600 GHz is designed and fabricated.By using the InGaAs/InP material system,the feature of the low barrier is obtained which greatly improves the performance of the detector.The measured typical voltage responsivity is about 900 V/W at 500-560 GHz and is about 400 V/W at 560-600 GHz.The proposed broadband waveguide detector has the characteristics of simple structure,compact size,low cost and high performance,and can be used in a variety of applications such as imaging,molecular spectroscopy and atmospheric remote sensing.     

Heterodyne performance of a quasioptical Schottky diode detector: Theoretical and experimental results

A detailed theoretical and experimental study of the heterodyne performance of a quasioptical Schottky diode detector is presented. The experimental results have been obtained by mixing the radiation from a FIR laser with the output of a 67–73 GHz Klystron. The heterodyne signal variation versus various parameters and its relation to the special case of two lasers mixing are described. The mixer characteristics are a NEP value of 2×10^–19W/Hz and a detector bandwidth of at least 9 GHz. Experimental evidence of harmonics generation of submillimetric frequencies at the diode junction is also presented.     

真空二极管大功率微波检波器设计

基于真空二极管设计了一种X波段大功率微波检波器,该检波器主要由真空二极管、BJ-100波导、调谐螺栓、低通滤波器和直流电源组成,其工作频率可根据需要在8.6~9.8 GHz范围内调谐。重点阐述该型大功率微波检波器的结构设计、实验室标定及辐射场测量实验结果,研究了不同脉宽和不同灯丝电压与检波特性的依赖关系。实验结果表明：该型检波器具有承受微波脉冲功率高（大于7 kW）、响应快（响应时间小于2.0 ns）、动态范围大、输出信号幅度高（可达数十V）、不需要同步信号等特点,适用于在高功率微波干扰环境下的单次和高重复频率脉冲功率测量。     

真空二极管大功率微波检波器设计

基于真空二极管设计了一种X波段大功率微波检波器,该检波器主要由真空二极管、BJ-100波导、调谐螺栓、低通滤波器和直流电源组成,其工作频率可根据需要在8.6~9.8GHz范围内调谐。重点阐述该型大功率微波检波器的结构设计、实验室标定及辐射场测量实验结果,研究了不同脉宽和不同灯丝电压与检波特性的依赖关系。实验结果表明:该型检波器具有承受微波脉冲功率高(大于7kW)、响应快(响应时间小于2.0ns)、动态范围大、输出信号幅度高(可达数十V)、不需要同步信号等特点,适用于在高功率微波干扰环境下的单次和高重复频率脉冲功率测量。     

Terahertz Direct Detectors Based on Superconducting Hot Electron Bolometers with Microwave Biasing

Terahertz(THz) direct detectors based on superconducting niobium nitride(NbN) hot electron bolometers(HEBs) with microwave(MW) biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature(T_N) of 403 K working at 4.2 K and 0.65 THz. As a result, the noise equivalent power of 1.5 pW/Hz~(1/2) and the response time of 64 ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2 K and 0.65 THz.     

一种基于室温工作的量子点光电探测器的微光读出和应用研究

针对量子点光电探测器线列进行微光检测研究,量子点探测器采用AlAs/GaAs/AlAs双势垒结构,GaAs宽阱中分别有一个InAs量子点(QDs)和In_0.15Ga_0.85As量子阱(QW),建立一个简单的器件模型进行分析。常温下,在632.8 nm He-Ne激光照射下,当光功率为 0.01 pW时,器件偏压-0.5 V,积分时间80.2 μs,电压响应率达到7.0×1011 V·W-1,具有非常高的灵敏度,这种光电探测器在300 K温度下可以探测光功率小于10-14 W极弱光。以这种量子点光电探测器为核心研制的高灵敏度光谱仪和分子超光谱系统结合对生物组织样本进行检测,研制了一种图谱相互验证,互为校正的生物组织光谱测量系统。     

Measurement of the fundamental thermal noise limit in a cryogenic sapphire frequency standard using bimodal maser oscillations

We report observations of the Schawlow-Townes noise limit in a cryogenic sapphire secondary frequency standard. The effect causes a fundamental limit to the frequency stability, and was measured through the novel excitation of a bimodal maser oscillation of a Whispering Gallery doublet at 12.04 GHz. The beat frequency of 10 kHz between the oscillations enabled a sensitive probe for this measurement of fractional frequency instability of 10(-14) tau(-1/2) with only 0.5 pW of output power.     

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage(V_(ex)) when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V_(ex) is too low(0.2 V-0.8 V) or too high(3 V-4.2 V),the timing jitter is increased with the V_(ex),particularly at high V_(ex).While at middle V_(ex)(1 V-2.8 V),the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V_(ex) and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of ~2.08×10~(-5) per gate at the V_(ex) of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power(NEP) and the afterpulse probability(P_(ap)).It is found that both NEP and P_(ap) increase quickly when the V_(ex) is above 2.8 V.At ~2.8-V V_(ex),the NEP and P_(ap) are ~2.06×10~(16)W/Hz~(1/2) and 7.11%,respectively.Therefore,the detector should be operated with V_(ex) of 2.8 V to exploit the fast time response,low NEP and low P_(ap).     

Design of Low-Profile Millimeter-Wave Substrate Integrated Waveguide Power Divider/Combiner

A low-profile millimeter-wave substrate integrated waveguide (SIW) power divider/combiner is presented in this paper. The simplified model of this compact SIW power dividing/combining structure has been developed. Analysis based on equivalent circuits gives the design formula for perfect power dividing/combining. In order to verify the validity of the design method, a four-way SIW power divider/combiner circuit operating at Ka band is designed, fabricated and measured. Good agreement between simulated and measured results is found for the proposed passive power divider/combiner. Experiments on the four-way passive divider/combiner back-to-back design demonstrate a minimum overall insertion loss of 1.5 dB at 31.1 GHz, corresponding to a power-combining efficiency of 84%. The measured 10-dB return loss bandwidth is demonstrated to be 2.2 GHz, and its 0.5-dB bandwidth was 2 GHz.     

Heterodyne investigations into FIR laser outputs and quasi-optical Schottky barrier diode detectors

Heterodyne investigations using laser/microwave mixing techniques have been applied to a FIR laser and a quasi-optical Schottky type detector. Techniques for identifying various laser parameters will be discussed. The heterodyne techniques resulted in NEP (2 × 10^-19 W/Hz at 496 μm) and bandwidth (9 GHz) specifications for the detector.     

一种基于热离子二极管的大功率微波探测器

主要给出了波导型的X波段大功率微波探测器的结构、标定方法和标定结果。该新型大功率微波探测器具有承受微波峰值功率高（可达100 kW）,时间响应快（响应时间小于2.0 ns）,不需要同步信号,抗干扰能力强等特点。根据不同的需要,可以制作成波导型和同轴型的大功率微波探测器。波导型探测器由热离子二极管、标准波导、滤波器和外电路组成,其工作频率范围为波导的工作频率范围;而同轴型探测器由热离子二极管、同轴波导,滤波器和外电路组成,可以宽带使用。标定结果表明该探测器很适合高功率微波峰值功率测量,尤其是在强电磁干扰环境和高重频微波脉冲条件下的测量,为解决功率测量不准的技术难题提供一种有效的技术手段。     

一种基于热离子二极管的大功率微波探测器

 主要给出了波导型的X波段大功率微波探测器的结构、标定方法和标定结果。该新型大功率微波探测器具有承受微波峰值功率高（可达100 kW）,时间响应快（响应时间小于2.0 ns）,不需要同步信号,抗干扰能力强等特点。根据不同的需要,可以制作成波导型和同轴型的大功率微波探测器。波导型探测器由热离子二极管、标准波导、滤波器和外电路组成,其工作频率范围为波导的工作频率范围;而同轴型探测器由热离子二极管、同轴波导,滤波器和外电路组成,可以宽带使用。标定结果表明该探测器很适合高功率微波峰值功率测量,尤其是在强电磁干扰环境和高重频微波脉冲条件下的测量,为解决功率测量不准的技术难题提供一种有效的技术手段。     

A scale mixer model for sis waveguide receivers

We report results from measurements of a scale mixer model, built to investigate the embedding impedance presented to a superconductor-insulator-superconductor (SIS) tunnel junction detector in a full height waveguide with two tuning elements. The embedding impedance is measured as a function of junction position across the waveguide channel. The results are compared to i) computer simulations of the embedding impedance using waveguide theory, ii) a lumped element circuit derived from the theory, iii) an SIS receiver operating between 200 and 280 GHz.     

1.55μmSi_(1-x)Ge_x光波导与Si_(1-x)Ge_x/Si多量子阱探测器集成的优化设计

对１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导和Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱（ＭＱＷ）红外探测器的集成器件结构进行了系统的分析和优化设计。优化结果为：１）对Ｓｉ１－ｘＧｅｘ光波导，Ｇｅ含量ｘ＝０．０５，脊宽、高和腐蚀深度分别为８、３和２．６μｍ；２）对Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器，Ｇｅ含量ｘ＝０．５，探测器由厚度为５５０ｎｍ、２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５＋１７ｎｍＳｉ组成，长度约２ｍｍ。结果表明，这种结构器件的内量子效率可达８８％。     

A 119 GHz planar Schottky diode mixer for a space application

A planar single-ended GaAs Schottky diode mixer has been designed, built, and tested at 119 GHz. The mixer front end includes also a waveguide filter for image rejection, and a temperature compensated ring filter. Measurements at room temperature showed a conversion loss of 7 dB and a noise temperature of 900 K (SSB). At 100 K the measured noise temperature of the mixer was 500 K (SSB).     

Investigation of a heterodyne receiver with open structure mixer at 324 GHz and 693 GHz

The performance of a submillimeter heterodyne receiver using an HCOOH laser local oscillator and an open structure mixer with a Schottky barrier diode has been optimized for 693 GHz. Working at room temperature a single sideband (SSB) system noise temperature of 7,300 K, a mixer noise temperature of 6,100 K and a conversion loss of 12 dB has been achieved. The same receiver system has been investigated at 324 GHz using an HCOOD laser local oscillator yielding a noise temperature of 3,100 K (SSB), a mixer noise temperature of 2,400 K (SSB) and a conversion loss of 10 dB (SSB). An acousto-optical spectrometer has also been constructed, with 1024 channels and a channel-bandwidth of 250 kHz. The system NEP per channel was 2.5×10^–17 W/Hz^1/2 at 324 GHz and 5.0×10^–17 W/Hz^1/2 at 693 GHz.     

Spectroscopic detection of methane by use of guided-wave diode-pumped difference-frequency generation

We report spectroscopic gas detection by the use of mid-infrared difference-frequency mixing of two diode lasers in a channel waveguide. The waveguide was fabricated by annealed proton exchange in periodically poled lithium niobate. We generated 3.43-3.73-mum tunable radiation in a single waveguide at room temperature by mixing diode lasers near 780 and 1010 nm. High-resolution spectra of methane were obtained in 2 s with electronically controlled frequency scans of 45 GHz. The use of highly efficient waveguide frequency converters pumped by fiber-coupled diode lasers will permit construction of compact, solid-state, room-temperature mid-infrared sources for use in trace-gas detection.     

过模结构0.14 THz高功率脉冲探测器研制

基于n型硅在强电场下的热电子效应,初步研制了一种采用过模结构的0.14 THz高功率太赫兹脉冲探测器。该探测器由基模波导WR6、过渡波导、过模波导WR10, n型硅探测芯片和偏置恒流源组成。模拟分析了探测器的工作过程,给出了相对灵敏度表达式,结果表明过模探测器能很好地工作在TE10模式。合理设计了探测芯片的结构参数和加工工艺,完成了探测芯片的加工和探测器样机的制作。将探测器样机在0.14 THz相对论表面波振荡器的辐射场进行了初步的验证性实验,并与二极管检波器的测量结果进行了对比分析。结果表明：过模探测器样机的响应时间在ps量级,相对灵敏度约为0.12 kW-1,最大承受功率至少为数十W,可用于0.14 THz高功率脉冲的直接探测。