基于多层石墨烯可饱和吸收体的被动调Q Ho∶YAG激光器

报道了2μm被动调Q的Ho∶YAG激光器,该激光器采用Tm~(3+)光纤激光器作为泵浦源,使用多层石墨烯作为可饱和吸收体。在连续波激光输出模式下,当泵浦功率为4.2 W时,获得了750 mW激光输出,输出激光中心波长为2.09μm,斜率效率为29.6%。在连续波激光器谐振腔中插入多层石墨烯可饱和吸收体并调整谐振腔,获得了脉冲激光输出。当泵浦功率为4.2 W时,获得最小脉冲宽度3.1μs、重复频率66.6 kHz的脉冲激光输出,其最大平均输出功率为170 mW,斜率效率为12.6%,光束质量因子M_x~2=1.15,M_y~2=1.12。     

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.     

Study on characteristics of diode-pumped continuous-wave tunable and passively Q-switched Tm:SSO laser

In this paper, we present a diode-pumped continuous-wave tunable and Q-switched Tm:SSO laser with a semiconductor saturable absorber mirror. In continuous-wave regime, a maximum output power of 340 mW at 1,980.7 nm was obtained. With a quartz plate, wavelength-tunable continuous-wave operation was achieved from 1,922 to 2,020 nm. In Q-switched regime, a maximum output pulse energy of 14.7 μJ under a repetition rate of 800 Hz and a minimum pulse width of 7.6 μs corresponding to a repetition rate of 8.8 kHz around 1,974.4 nm were obtained from the passively Q-switched Tm:SSO laser.     

High-Power Continuous-Wave and Acousto-Optical Q-Switched Ho:(Sc_(0.5)Y_(0.5))_2SiO_5 Laser Pumped by Laser Diode

We experimentally investigate the continuous-wave(cw)and acousto-optical(AO)Q-switched performance of a diode-pumped Ho:(Sc_(0.5)Y_(0.5))_2SiO_5(Ho:SYSO)laser.A fiber-coupled laser diode at 1.91m is employed as the pump source.The cw Ho:SYSO laser produces 13.0 W output power at 2097.9 nm and 56.0%slope efficiency with respect to the absorbed pump power.In the AO Q-switched regime,at a pulse repetition frequency of 5 kHz,the Ho:SYSO laser yields 2.1 mJ pulse energy and 21 ns pulse width,resulting in a calculated peak power of 100 k W.In addition,at the maximum output level,the beam quality factor of the Q-switched Ho:SYSO laser is measured to be about 1.6.     

Tunable repetition frequency passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

We first report a tunable repetition frequency passively Q-switched 2053 nm Tm,Ho:YLF laser by tuning the tilt angle of the Cr:ZnS saturable absorber. When the pump power is 1.4 W, the pulse repetition frequency can be tuned from 1.6 to 19.4 kHz by changing the position of Cr²⁺:ZnS saturable absorber along the cavity axis. When the Cr²⁺:ZnS saturable absorber is near the Tm,Ho:YLF crystal, the repetition frequency can be tuned from 0.8 to 4.0 kHz by changing the tilt angle of the Cr²⁺:ZnS saturable absorber, furthermore, the pulse width and the pulse energy are near constants of 1.7 μs and 3.5 μJ, respectively.     

Cr^4＋：YAG在对撞脉冲锁模的Nd：YAG激光器中实现被动锁模的研究

在理论上提出了Ｃｒ＾４＋：ＹＡＧ作为可饱和吸收体在Ｎｄ：ＹＡＧ激光器中实现被动锁模的可能性，运用速率方程组导出在强激光脉冲作用下Ｃｒ＾４＋：ＹＡＧ激发态吸收的恢复时间和饱和光强。实验上在带有抗共振环结构的接近于介稳腔的脉冲式Ｎｄ：ＹＡＧ激光器中用Ｃｒ＾４＋：ＹＡＧ作为可饱和吸收体实现被动锁模运转，得到能量１３．５ｍＪ、平均脉宽１８０ｐｓ的锁模脉冲序列。     

Diode-pumped, high-average-power femtosecond Cr3+ :LiCAF laser

We demonstrate a high-average-power continuous wave (cw) and cw mode-locked Cr3+ :LiCAF laser pumped by broad-area laser diodes. In cw lasing experiments, up to 580 mW of output was obtained with 4.35 W of incident pump. A semiconductor saturable absorber mirror was used to initiate stable, self-starting, mode locking. In the cw mode-locked regime, the Cr3+ :LiCAF laser produced nearly transform-limited, 67 fs long pulses near 800 nm with an average output power of 300 mW. The pulse repetition rate was 120 MHz, with a pulse energy of 2.5 nJ.     

High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber

The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO₄ laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors.     

Efficient continuous wave and Q-switched operation of a dual-end-pumped <Emphasis Type="Italic">c</Emphasis>-cut Tm:YAP laser

An efficient continuous wave (CW) and Q-switched c-cut Tm:YAP laser is reported in this letter. With the dual-end-pumped convex-concave resonator, CW output power up to 13.6 W at 1.99 μm was obtained under a total incident pump power of 50 W. The corresponding slope efficiency was 34.3% and conversion efficiency was 27.2%. The active Q-switched operation of the laser had an average output power of 12.5 W at 10 kHz pulse repetition frequency, with a minimum pulse width of 126 ns. With 6 kHz pulse repetition frequency, the maximum pulse energy of 1.6 mJ was obtained. In addition, using the Tm:YAP laser as a pumping source for gain-switched Cr:ZnSe laser, as much as 4 W output power in the wavelength range of 2.5–2.6 μm was obtained.     

Efficient passively Q-switched laser operation of Yb in the disordered NaGd(WO4)2 crystal host

Efficient passively Q-switched laser operation of the disordered Yb:NaGd(WO(4))(2) crystal is demonstrated for the first time to our knowledge with a Cr(4+):YAG saturable absorber by diode end pumping. 2.05 W of average output power at a pulse repetition frequency of 13.3 kHz was obtained at an absorbed pump power of 7.7 W, with a slope efficiency of 40%. The energy and duration of the generated laser pulse were 154 microJ and 33 ns, respectively, corresponding to a peak power of 4.67 kW. In continuous-wave operation, the Yb:NaGd(WO(4))(2) laser yielded an output power of 5.5 W with an optical-optical efficiency of 51%.     

Continuous-Wave and Actively Q-Switched Diode-Pumped Er:LuAG Ring Laser at 1650 nm

We demonstrate a cw and actively Q-switched Er.LuAG laser resonantly dual-end-pumped by 1532 nm fibrecoupled laser diodes.A maximum cw output power of 1.9W at 1650.3nm is obtained at a pump power of 25.5 W,corresponding to a slope efficiency of 43.3%.In the Q-switched regime,the maximum pulse energy of3.51 mJ is reached at a pulse repetition rate of 100 Hz,a pulse duration of 90.5 ns and a pump power of 25.5 W.At the repetition rate of 400 Hz,the output energy is 2.12 mJ,corresponding to a pulse duration of 125.4 ns.     

Cr(2+):ZnSe and Co(2+):ZnSe saturable-absorber Q switches for 1.54-mum Er:glass lasers

Passive Q switching of Er:glass lasers has been demonstrated with Cr(2+):ZnSe and Co(2+):ZnSe saturable absorbers. A pulse duration of ~50ns and an output pulse energy of 5 mJ were obtained with both Co:ZnSe and Cr:ZnSe passive shutters. A Q-switched conversion efficiency of as much as 26% was obtained for Cr:ZnSe. Theoretical modeling exhibits satisfactory agreement with experimental data.     

Passively Q-Switched Nd:YVO_4 Laser Using a Gold Nanotriangle Saturable Absorber

A passively Q-switched Nd:YVO_4 laser at 1064 nm is demonstrated based on a gold nanotriangle saturable absorber(GNT SA).Under a pump power of 3.82 W,the maximum average output power of 218mW is achieved,corresponding to a slope efficiency of 12.9%.The minimum pulse width is 165ns and the maximum pulse repetition rate is 300kHz at the pump power of 3.48 W.Our results prove that the GNT SA is a promising saturable absorber for near-infrared lasers.     

Acousto-optic <Emphasis Type="Italic">Q</Emphasis>-switched Tm:Ho:YbAG laser pumped at 1678 nm

Acousto-optic Q-switched lasing has been obtained for the first time in a Tm:Ho:YbAGcrystal. The laser output power is analyzed as a function of the laser pulse repetition rate. It is found that at rates above 30 kHz the laser slope efficiency reaches maximum values (~20 to 30%), comparable with the efficiency in the cw mode. The shortest laser pulse width is about 40 ns, and the average output power reaches about 80mW.     

Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm

We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps.     

Q-switched operation of <Emphasis Type="Italic">a</Emphasis>-cut Ho:YAlO<Subscript>3</Subscript> laser pumped by a diode-pumped 1.91 μm thulium laser

Q-switched operation of a room temperature Ho:YAP laser was resonantly end-pumped by a diode-pumped Tm:YLF laser at 1.91 μm. The CW Ho:YAP laser generated 9.9 W of linearly output at 2119.03 nm with beam quality factor of M ² ∼1.46 with respect to absorbed pump power of 19.16 W, corresponding to an optical-to-optical conversion efficiency of 51.7% and slope efficiency of 60.6%. Under Q-switched operation, the maximum output power of 9.8 W in relation to 10 kHz pulse repetition frequency (PRF) was obtained, however, the maximum peak power of 60 kW at the PRF of 5 kHz was demonstrated. At 5 kHz pulse energies of 1.92 mJ with pulse width of 32 ns was achieved.     

High-efficiency continuous-wave and Q-switched operation of a resonantly pumped Ho:YAP ring laser

We demonstrated continuous-wave (CW) and Q-switched operation of a room-temperature Ho:YAP ring laser that is resonantly end-pumped by a diode-pumped Tm:YLF laser at 1.91 ??m. Continuous wave output power of 3 W at 2119 nm is obtained under the absorbed pump power of 10.17 W, corresponding to a slope efficiency of 60%. For the Q-switched regime the maximum pulse energy of 1.58 mJ and the minimum pulse width of 590 ns at the repetition rate of 1 kHz are achieved.     

Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber

We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 μJ and 0.58 kW, respectively.     

Continuous-wave and Q-switched laser operation of Nd:Gd0.18Y0.82VO4 mixed crystal

Efficient continuous-wave (cw), passively Q-switched, and actively Q-switched laser operations are demonstrated with a mixed vanadate crystal of Nd:Gd_0.18Y_0.82VO₄ under diode pumping. In a cw operation, an output power of 8.25 W is obtained at a maximum available incident pump power (P_in) of 15 W, with a slope efficiency of 56%. Using a Cr⁴⁺:YAG crystal of initial transmission of 62% as the saturable absorber for Q-switching, an average output power of 3.05 W is generated at pulse repetition frequency (PRF) of 16.7 kHz when the laser is pumped with the same maximum P_in. The pulse energy, pulse duration, and peak power are 183.3 μJ, 6.0 ns, and 30.6 kW, respectively. When actively Q-switched by an acousto-optic modulator, the laser produces an average output power of 5.5 W at PRF of 30 kHz with 16.2 W of pump power incident upon the laser crystal. The pulse energy, duration, and peak power are measured to be 183 μJ, 10.5 ns, and 17.5 kW, respectively.     

Efficient Ho:YAP laser dual-end-pumped by Tm fiber laser

We report the continuous wave and acousto-optically Q-switched operation of an in-band dual-end-pumped Ho:YAP laser at room temperature. A continuous wave output power of 11.0W at 2118 nm was obtained at an absorbed pump power of 19.8 W, corresponding to a slope efficiency of 62.1%. For the Q-switched mode, a maximum pulse energy of about 1.07 mJ and a minimum pulse width of 29 ns at a repetition rate of 10 kHz were achieved, resulting in a peak power of 36.9 kW.