GaAs(001)表面外延生长Mn薄膜的XPS研究

利用x射线光电子能谱的深度剖面技术,对不同衬底温度下分子束外延生长的Mn薄膜及其与GaAs(001)衬底间的界面进行了元素组分和化学结合状态随深度变化的研究。实验发现衬底温度等于400K时制备的fcc-Mn/GaAs(001)体系中,fcc-Mn层与GaAs衬底之间存在一层较厚的Mn-Ga-As的缓冲层;衬底温度等于300K(室温)时制备的a-Mn/GaAs(001)体系中也存在类似的缓冲层,但它的厚度与fcc-Mn的情形相比要小得多;而当衬底温度等于450K时制备的体系在GaAs衬底之上全部是Mn-Ga     

LaFe11.4 Al1.6中铁磁相与反铁磁相的双相共存

通过磁场下热磁曲线的测量,在LaFe11.4Al1.6化合物中发现了一个在一定温区内随温度稳定的铁磁相和反铁磁相的共存亚稳态.确定了这个亚稳态能够存在的磁场和温度范围,从而使LaFe11.4Al1.6化合物的磁相图更加完善.这个亚稳态的温度稳定性能够很好地解释磁性转变的临界场随温度的变化行为.这个双相共存亚稳态的存在,与LaFe11.4Al1.6中的磁性交换作用及晶格畸变所产生的边界相的稳定性有关.     

LaFe11.4Al1.6中铁磁相与反铁磁相的双相共存

通过磁场下热磁曲线的测量，在LaFe114Al16化合物中发现了一个在一定温区内随温度稳定的铁磁相和反铁磁相的共存亚稳态.确定了这个亚稳态能够存在的磁场和温度范围，从而使LaFe114Al16化合物的磁相图更加完善.这个亚稳态的温度稳定性能够很好地解释磁性转变的临界场随温度的变化行为.这个双相共存亚稳态的存在，与LaFe114Al16中的磁性交换作用及晶格畸变所产生的边界相的稳定性有关. 关键词： 共存相 亚稳态 晶格畸变     

相变过程中的亚稳态和失稳分解现象

用平均场理论简要说明了两相转变过程中出现的亚稳态、共存曲线以及失稳界线的来源.通过分析六氟化硫系统在加热及冷却的实验过程中在临界点附近发生的现象,理解不处于热力学平衡态的体系可以到达亚稳态区域,继续降温则体系发生失稳分解.     

γ相亚稳态Mn的制备和研究

过渡金属及其合金的磁性是一个长期存在争议的问题。同种元素但晶体结构不同的材料具有不同的原子间距和势场对称性,因而可能会造成电子态和磁性方面的差别.制备同一磁性金属的多种亚稳态结构,并对其电子态和磁性进行研究,有助于加深人们对金属磁性的理解,具有重要的理论意义. 金属Mn具有多种单晶结构.室温下体单晶的稳定结构(α相)是复杂立方结构(A12),它在温度低于100K时具有反铁磁性.β相Mn是存在于高温下的另一种复杂立方结构(A13),通过高温淬火可以获得它在室温下的亚稳态相,一般认为β相Mn不具有磁有序结构.γ相和δ相Mn分别具有面…     

应力下SmNiO_3钙钛矿氧化物薄膜材料的电导与红外光电导

稀土镍基钙钛矿氧化物RNiO_3(R为稀土元素)可以在温度触发下发生从电子游离态到局域态的金属绝缘体转变,这一特性在传感器,数据存储,调制开关等方面具有可观的应用价值.本文通过脉冲激光沉积法,在钛酸锶(SrTiO_3)、铝酸镧(LaAlO_3)单晶衬底上准外延生长热力学亚稳态镍酸钐(SmNiO_3)薄膜材料,利用薄膜与衬底间晶格失配引入界面应力,实现对SmNiO_3电子轨道结构与金属绝缘体相变温度的调节.结合电输运性质与红外透射实验的综合表征研究,论证了双向拉伸应变引起的晶格双向拉伸畸变,可以引起SmNiO_3的禁带宽度的展宽,从而稳定绝缘体相并提高金属-绝缘相转变温度.进一步结合近边吸收同步辐射实验表征,揭示了拉伸应变稳定SmNiO_3绝缘体相的本质在于Ni—O成键轨道在双向拉伸形变作用下的弱化,使得镍氧八面体中的价电子偏离镍原子从而稳定SmNiO_3的低镍价态绝缘体相.     

纳米硅薄膜

非晶态硅薄膜是当前重要的人工功能材料,它具有亚稳态结构,具有一系列不同于晶态硅的特征.十余年来,用非晶硅薄膜材料已研制成各种类型的非晶态半导体新器件[1].然而,由于这种材料本身还存在一些弱点,如结构上的亚稳状态及不稳定性,工艺上不易做到很好的重复,有较强的光感生效应及热不稳定性;迁移率及载流子寿命远低于晶态硅等,因而它的进一步开发和应用受到了限制. 如何改进非晶硅薄膜材料的性能、质量以及寻求提高迁移率、载流子寿命这些重要参数是当务之急.近几年,国外不少研究工作又重新回到探索和改进非晶硅薄膜材料性能上来,从薄膜沉…     

对硅片上自组装生长的Pentacene薄膜生长机制及其结晶相态的研究

采用热蒸发的方法在硅片衬底上自组装生长的Pentacene薄膜,薄膜在80℃温度下经2 h恒温真空热处理,通过原子力显微镜(AFM)对Pentacene薄膜表面形貌及其生长机制进行研究.结果得到,在硅片上生长的Pentacene薄膜足以台阶岛状结构生长,其岛状直径约为100 nm.且Pentacene分子以垂直于衬底的方向生长,台阶岛状结构中每个台阶的平均高度约为1.54 nnl·s-1,与Pentacene分子的沿长轴方向的长度相近.从Pentacene薄膜的XRD图谱中可以看出,薄膜在形成的过程中会因条件的不同而形成不同的结晶相,分别为薄膜相和三斜体相,且薄膜的结晶相将随着薄膜厚度的增加向三斜体相转变,其临界厚度为80和150 nm,当薄膜大于150 nm时,薄膜的三斜体相占主导地位,而当Pentacene薄膜的厚度小于80 nm时,Pentacene薄膜呈薄膜相存在.     

MW-ECR PE-UMS等离子体特性及对Zr-N薄膜结构性能的影响

采用静电探针技术对微波电子回旋共振(MW-ECR) 等离子体进行了诊断,利用等离子体增强 非平衡磁控溅射(PE-UMS)法在常温下制备了Zr-N薄膜, 通过EPMA，XRD，显微硬度对膜的 结构和性能进行评价.实验结果表明，随氮气流量增加，总的等离子体密度从807×10⁹c m^-3增加到831×10⁹cm^-3然后逐渐减小为752×10 ⁹cm^-3；而N₂⁺密度则从312×10^{8< /sup>cm-3线性递增到335×109cm-3；电子温度变化 不大.对薄膜而言，随N₂+密度增大，样品中氮含量增加，而晶粒逐 渐变小，当样品中N/ Zr原子比达到14时，薄膜中出现亚稳态的Zr₃N₄相以及非晶相， 在更高氮流量下，整 个薄膜转变为非晶态.与此相应，薄膜硬度由最初的225GPa增大到2678GPa 然后逐渐减 小到1982GPa. 关键词： 氮化锆薄膜 ECR等离子体 磁控溅射 诊断}     

树脂型光刻胶薄膜中Eu~(3+)的辐射跃迁特性

合成了稀土配合物Eu(TTFA)3(TTFA,2-thenoyltfifluoroacetone)掺杂的树脂型光刻胶薄膜,测定了薄膜的激发光谱和发射光谱.根据Judd-Ofelt理论,由发射光谱获得了Eu3+在光刻胶薄膜中的J-O参数Ω2=24.4×10-20cm2,Ω4=2.8×10-20cm2.利用得到的J-O参数计算了光刻胶薄膜中5D0激发态的辐射跃迁概率(977 s-1)和辐射寿命(1.02 ms),同时导出了光刻胶薄膜中Eu3+的5D0→FJ(J=1,2,4)跃迁的受激发射截面σ和荧光分支比β.分析表明,Eu3+掺杂的光刻胶薄膜具有较长的亚稳态寿命以及较大的受激发射截面,是一种主动放大的光波导薄膜.其发射波长与光刻胶的低吸收损耗区很好地匹配,可用于研发聚合物光波导放大器和激光器.     

Structure of heterogeneous states in nanocrystalline CoPd films

Thin films of equiatomic alloy CoPd have been produced by condensation at high substrate temperatures. The films obtained are characterized by microdiffraction patterns in the form of diffuse halo in the initial state. This is polymorphic martensitic transient state, formed during martensitic transformation of the low-temperature hcp phase to the high-temperature fcc phase. The metastable crystal structures arising in these alloy films are identified.     

Formation and stability of Al-Mn quasicrystalline thin films prepared by high temperature successive deposition

This article reviews the results on the formation of i-QC thin films prepared by high-temperature successive deposition in the Al-Mn system and the metastable quasicrystalline Al₄Mn and crystalline Al₆Mn phase transformation in detail. Experimental evidence is given for the location of the solid-phase reaction. New data concerning the effects of preparation parameters (temperature, Mn deposition rate, composition) on the formation processes are reported. The phase formation and transformation processes are described by the combination of thermodynamic and kinetic factors.     

Reactive sputtering of (Co,Fe) nitride thin films on TiN-bufferd Si

Epitaxial (Co,Fe) nitride films were prepared on TiN buffered Si(001) substrates by dual-target reactive co-sputtering method. With lower Co content, thin films mainly consist of (Co _x Fe_1?x )₄N phase. With higher Co content, STEM EELS found no N signal in the thin film, and, combined with XRD results, shows that fcc Co is the main phase of the thin films instead of Co₄N. The N₂ atmosphere is helpful to induce the fcc Co phase formation during dual-target reactive co-sputtering deposition. For the films with less Co content, the RT magnetization measurements show similar magnetic properties as epitaxial Fe₄N(001) films, while increasing the Co content, the resulting fcc Co thin films show biaxial anisotropy with the [110] in-plane easy axis.     

Formation of bcc-Ni thin film on GaAs(100) substrate and phase transformation from bcc to fcc

Ni thin films are prepared on GaAs(100) single-crystal substrates at room temperature by using an ultra-high vacuum radio-frequency magnetron sputtering system. The growth behavior and the crystallographic properties are studied by in-situ refection highenergy electron diffraction and pole-figure X-ray diffraction. In an early stage of film growth, a metastable bcc Ni(100) single-crystal film is formed on GaAs(100) substrate, where the bcc structure is stabilized through hetero-epitaxial growth. With increasing the film thickness, fcc crystals coexist with the bcc(100) crystal. High-resolution cross-sectional transmission electron microscopy shows that the film consists of a mixture of bcc and fcc crystals and that a large number of planar faults exist parallel to the fcc(111) close-packed plane. The results indicate that the bcc structure starts to transform into fcc structure through atomic displacement parallel to the bcc{110} close-packed planes.     

Long-lived metastable bcc phase during ordering of micelles

We report a metastable bcc phase that intervenes between a disordered micellar suspension and an fcc crystal in a block copolymer solution. Upon heating, the metastable bcc phase nucleates first, and then transforms over the course of hours to the stable fcc phase. At still higher temperatures, the fcc phase transforms to an equilibrium bcc phase. These results constitute an interesting experimental manifestation of Ostwald's step rule, and also support recent theory and simulation results whereby bcc nucleates more readily from a melt of spheres.     

Quenching of exchange splitting in face centred cubic Fe observed by angle resolved photoemission

The energy bands along the (001)-direction of face centered cubic iron have been determined by means of angle resolved photoemission utilising synchrotron radiation. Bulk Fe is bcc at room temperature: the metastable fcc-phase has been obtained by thin film epitaxy on a Cu(001)-surface. In contrast to bcc Fe the bands of fcc Fe show no exchange splitting (to within the limits of our experimental resolution of 0.3 eV), indicating a loss of ferromagnetic order in the fcc phase at room temperature. An as yet unidentified feature is reported which is not consistent with the one-electron band theory.     

Stabilisation of fcc cobalt layers by 0.4 nm thick manganese layers in Co/Mn superlattices

Epitaxial Co/Mn multilayers (0.75 to 6 nm Co, 0.4 nm Mn layer thickness) have been grown on mica substrates covered by a (0002) Ru buffer layer. The structural properties of these layers have been studied using X-ray diffraction, nuclear magnetic resonance (NMR), and high resolution transmission electron microscopy (HRTEM). The Co layers, grown as face centred cubic (fcc), were found to be stabilised by the very thin Mn layers. Data obtained using X-ray diffraction and NMR were analysed and found to be in good agreement, while Monte-Carlo simulations were used to interpret the data and calculate the expected diffracted intensity and NMR spectra. The HRTEM data show that the Mn layers give rise to a large strain contrast extending, in the growth direction, over a distance which exceeds the thickness of the Mn layers. The superlattices could be described as having an fcc structure containing randomly located stacking faults with varying densities. The results verify the presence of a dominant, almost perfect phase of fcc stacking, and of a faulted hcp phase, while the number of defects increases with the Co layer thickness. Received 27 October 1999 and Received in final form 29 May 2000     

面心立方(001)方向AB合金薄膜表面层的有序无序相变

采用平均场近似方法对两组元面心立方合金薄膜的有序无序相转变过程进行模拟计算，结果表明，合金薄膜的有序无序相变受薄膜层数奇偶性的影响.薄膜层数奇偶性不同，会导致薄膜具有不同的相结构和热力学性质.在弱表面偏析作用下，对于偶数层薄膜，由于薄膜边界对称性破缺，对应体组分x=0.5的化学势区间，偶数层薄膜有序无序相变过程中出现了中间温度相和浸润现象.而奇数层薄膜的有序无序相变类似体材料的相变.在强表面偏析作用下，由于受表面偏析作用和有限尺寸效应影响，对应体组分x=0.5的化学势区间，奇数层薄膜中出现AB(AB)关键词： 合金薄膜 有序无序相变 浸润现象 准热力学相变     

A study of the electrodeposition of Co–Cu alloys thin films on FTO substrate

In this work, the early stages and the properties of the electrodeposition process of Co–Cu alloys thin films on a fluorine-doped tin oxide (FTO)-coated conducting glass substrate from a sulfate bath were investigated using conventional electrochemical techniques and X-ray diffraction technique (XRD). FTO was chosen as a foreign substrate because of its high transparence and its properties as inert material. Within the potential range analyzed, the kinetics of the Co–Cu electrodeposition corresponded to a model including instantaneous nucleation on active sites and diffusion controlled cluster growth. The number of active sites of the substrate, N ₀, and the diffusion coefficient, D, were determined from the analysis of potentiostatic current transients on the basis of existing theoretical models. XRD patterns of the Co–Cu alloys thin films display fcc and hcp phase, with peaks quite close to those of the Co phase (fcc and hcp). Therefore, the variation of the composition of thin films alloy is possible depending on the deposition potential.     

MOCVD技术制备的ZnS:Mn电致发光薄膜结晶性及Mn2+分布

本文报导了用MOCVD技术制备的ZnS:Mn电致发光薄膜为立方晶相,结晶取向性好,颗粒大。从高倍率的扫描电镜拍摄的照片观察到薄膜的表面平滑。SIMS测量表明Mn2+在ZnS薄膜纵向分布均匀,但在两侧有起伏,可能的原因是在生长的初终阶段流量的突变使化合物的化学计量比偏离而产生位错,引起原子的局部堆积,并且由于初终阶段ZnS:Mn生长的衬底不同使原子堆积层厚度不同。