Electron (muon) decay of a heavy lepton

Expressions are derived for the differential probability for the decay e(). The possibly nonzero mass of and the polarizations of both the decaying lepton and the charged lepton which is produced are all taken into account. A quantitative analysis is carried out for various masses of the neutrino and for various energies of the lepton emitted during the decay.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 97–100, June 1981.     

c = 2 Rational Toroidal Conformal Field Theories via the Gauss Product

We find a concise relation between the moduli , of a rational Narain lattice (,) and the corresponding momentum lattices of left and right chiral algebras via the Gauss product. As a byproduct, we find an identity which counts the cardinality of a certain double coset space defined for isometries between the discriminant forms of rank two lattices.     

On the Eigenstates of the Elliptic Calogero–Moser Model

It is known that the trigonometric Calogero–Sutherland model is obtained by the trigonometric limit (–1) of the elliptic Calogero–Moser model, where (1, ) is a basic period of the elliptic function. We show that for all square-integrable eigenstates and eigenvalues of the Hamiltonian of the Calogero–Sutherland model, if exp(2–1) is small enough then there exist square-integrable eigenstates and eigenvalues of the Hamiltonian of the elliptic Calogero–Moser model which converge to the ones of the Calogero–Sutherland model for the 2-particle and the coupling constant l is positive integer cases and the 3-particle and l=1 case. In other words, we justify the regular perturbation with respect to the parameter exp(2–1). With some assumptions, we show analogous results for N-particle and l is positive integer cases.     

Microscopic theory of gas-surface interaction

A kinetic theory for inelastic scattering, trapping and desorption of gas molecules by surfaces is described. The theory is valid if the time scale _l = 1/r introduced by the relaxation ratesr in the kinetic equations (which is of the order of the life time of vibrational states of adsorbates) is sufficiently large compared to the vibrational period ₀. For sufficiently large activation energies of the adsorbates another time constant _res, the residence time of adsorbed particles, can be determined from the theory. One thus may distinguish four different partly overlapping regimes defined by the time scalest _{I l} , ₀t_II, _l t_III and _rest_IV. Regime I is governed by the Schrödinger equation regime II by the kinetic equations. In the region where both regimes overlap the kinetic coefficients can be expressed in terms of microscopic quantities which have been calculated previously. The relevant quantities in the other regimes are introduced and discussed from a unified point of view thus providing a link between the regimes I and IV which have been treated in detail before.     

Role of Activator and Vacancy Centers in the Decay of the Gamma Scintillators of CsI–Na Crystals

The influence of the concentration of an activator (C _NaI) and of plastic deformation on a change in the contribution of a slow component to the decay of the -scintillations of CsI–Na crystals was investigated, as well as the influence of C _NaI on a change in the shape of the luminescence excitation spectrum in the region of absorption of activator centers (AC) and of vacancy-related centers (VRC) and also on a change in the intercenter time of deexcitation of the centers indicated. It is shown that AC and VRC participate in the photoluminescence and -scintillations of CsI–Na crystals. In the -scintillations, AC are responsible for the component ₁ = 370 nsec, whereas the components ₁ = 460 nsec and ₂ 2 sec are associated with VRC. The reduction of ₁ from 770 to 560 nsec with an increase in C _NaI from 2·10^–3 to 3·10^–2 mole% and from 570 to 470 nsec after plastic deformation of the crystals ( = 5%) along the 111 axis is caused by a decrease in the number of VRC. The mechanisms underlying the -scintillations of the CaI–Na crystals containing AC and VRC and also the decrease in the number of VRC are discussed.     

Macroscopic short-time electrodynamics for conductors

In the macroscopic electrodynamics (MED) of good conductors (metals) based on Ohm's law j=E, the momentum relaxation time =m/ne² of the electrons limits the application to electromagnetic (EM) processes with characteristic timest. An interesting physical difficulty occurs in MED since the EM field damping time _R=/ of metals is very small compared with the minimum macroscopic time scale, _R. Consequently, the damping and propagation of EM waves and pulses in good conductors cannot be correctly described within the frame of conventional MED. New hyperbolic EM wave equations with relaxation and memory are proposed, which no longer exhibit the _R deficiency. The latter is caused by Ohm's law, which breaks down for short-time processes, due to neglect of electron inertia. The advantages of the proposed and the disadvantages of the conventional EM wave equations for good conductors are discussed in applications.     

A matrix method for estimating the Liapunov exponent of one-dimensional systems

Let : [0, 1][0, 1] be a piecewise monotonie expanding map. Then admits an absolutely continuous invariant measure. A result of Kosyakin and Sandler shows that can be approximated by a sequence of absolutely continuous measures _n invariant under piecewise linear Markov maps _itn. Each _itn is constructed on the inverse images of the turning points of . The easily computable measures _n are used to estimate the Liapunov exponent of . The idea of using Markov maps for estimating the Liapunov exponent is applied to both expanding and nonexpanding maps.     

Dispersion of the permittivity of high-resistance semiconductors

We consider the mechanism of macroscopic polarization of semiconducting plates owing to the interaction of free carriers with an impurity level, in which role the level of the residual impurity of compensated semiconductors may appear. This mechanism, in combination with the diffusion-drift mechanism of polarization, results in additional dispersion of the real () and imaginary () parts of the dielectric permittivity, this being particularly significant for semiconductors of thickness smaller than the screening length L_s of free carriers. The character of the behavior of and depends on the relation between the Maxwell relation time _M and the times of carrier capture: _c and ejection _e by an impurity center. For _cetm and (/L_s) _e/_c1 the dispersion of and is the same as for thick plates (/L_s1). For _{c m e} and (/L_s)_e/_c1 the () curve has a characteristic kink in the region 1/_e, indicating additional absorption associated with the ejection of carriers into the surface region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 11–13, October, 1981.     

From the eden model to the kinetic growth walk: A generalized growth model with a finite lifetime of growth sites

We propose a new class of cluster growth models where growth sites have a finite lifetime , which contains as special cases the Eden model ( = ) and the kinetic growth walk ( = 1). For finite but large values the growth process can be characterized by a crossover timet _X; for times belowt _X an Eden-type cluster is formed, while for times abovet _X the growth process belongs to the universality class of the self-avoiding random walk. The crossover time increases monotonically with . We develop a scaling theory for the time evolution of the mean end-to-end distance between the seed and the last-added site, and for the average number of growth sites by which the kinetics of the growth process can be characterized. We test this scaling theory by extensive Monte Carlo simulations. We also extend our results to inhomogeneous media (percolation systems).     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

Nature of 2-Aminoxanthone Fluorescence

Absorption and fluorescence spectra of 2-aminoxanthone in solutions of different types at 77–350 K were studied. The existence of three bands (_{1 max} = 417 nm, ₁ = 14 ns; _{2 max} = 528 nm, ₂ = 13 ns; and _{3 max} = 565 nm, ₃ = 6 ns) in fluorescence of 2-aminoxanthone solutions has been established. It was shown that the first short-wave band was determined by deactivation of singlet excitation of an aminoxanthone molecule. The band with _{3 max} = 565 nm (depending on the concentration) is connected with excimer-type aggregates, which are formed by aminoxanthone molecules grouped with the help of dipole molecules of solvent or by weak hydrogen bonds between aminoxanthone molecules. The emission in band _{2 max} = 528 nm is caused by reversible changes in the 2-aminoxanthone molecule and probably is connected with an intramolecular proton transfer.     

The Landau-Pomeranchuk effect and soft lepton-pair production in heavy ion collisions

The most general angular decay distribution of the hadronic system in the decay of a polarized into one pseudoscalar plus a vector is calculated. Emphasis is put on decays ine ⁺ e ^– experiments where the neutrino escapes detection and the restframe cannot be reconstructed. We propose a model for the decay intov involving both a vector- and a second class axial vector-current contribution. Then we present numerical results for this decay channel.     

A frequency response model in multiquantum well lasers with unequilibrium carrier transport

A carrier transport model to explain the high-frequency response in high-speed MQW lasers is described. The ambipolar approximation, which is unsuitable for dealing with the high-speed carrier dynamics in MQW structures, was not adopted for small-signal analysis. The carrier transport effect can be characterized by four time constants: the electron transport time, _bmn; the hole transport time, _bmp; the electron escape time, _wbn; and the hole escape time, _wbp. The frequency response was interpreted as the sum of the constant response term due to the fast electron current and the roll-off term due to the slow hole transport time. The ratio of the electron contribution to the total response was proportional to the ratio of electron contribution to the total differential gain, , and reciprocally proportional to _n0 = 1 + _bmn/_wbn. The value of was calculated to be about 0.5 for typical MQW lasers. The roll-off frequency is mainly determined by . The ratio _p0 = 1 + _bmp/_wbp affects the resonant frequency and the damping rate in the high-bias condition.     

On the hardening in modulated structure

Hardening in modulated structure is evaluated using the periodic approximation. The critical shear stress increment due to the periodic structure is calculated in the constant line energy approximation. The results are applicable to any periodic structure (concentration waves must be neither homophase nor symmetric) exerting on the dislocation local glide forces with an amplitude smaller than ( denotes the line energy of corresponding straight dislocation directed along the concentration variations with the wave vector). In the zero approximation, the critical forceb is then simply the glide force on the straight dislocation averaged along its length in its most hardened position.     

Performance of a prototype microwave frequency standard based on laser-detected,trapped171Yb+ ions

A microwave frequency standard based on buffer gas-cooled¹⁷¹Yb⁺ ions confined in a linear Paul trap has been demonstrated in prototype form. The standard exhibits a fractional frequency instability characterised by an Allan deviation of (_y() = 2.9 × 10^–13–1/2 for < 2 × 10⁴ s. Factors affecting the stability of the standard have been systematically investigated.     

The projection approach to the Fokker-Planck equation. I. Colored Gaussian noise

It is shown that the Fokker-Planck operator can be derived via a projection-perturbation approach, using the repartition of a more detailed operator into a perturbation ₁ and an unperturbed part ₀. The standard Fokker-Planck structure is recovered at the second order in ₁, whereas the perturbation terms of higher order are shown to provoke the breakdown of this structure. To get rid of these higher order terms, a key approximation, local linearization (LL), is made. In general, to evaluate at the second order in ₁ the exact expression of the diffusion coefficient which simulates the influence of a Gaussian noise with a finite correlation time, a resummation up to infinite order in must be carried out, leading to what other authors call the best Fokker-Planck approximation (BFPA). It is shown that, due to the role of terms of higher order in ₁, the BFPA leads to predictions on the equilibrium distributions that are reliable only up to the first order in t. The LL, on the contrary, in addition to making the influence of terms of higher order in ₁ vanish, results in a simple analytical expression for the term of second order that is formally coincident with the complete resummation over all the orders in t provided by the Fox theory. The corresponding diffusion coefficient in turn is shown to lead in the limiting case to exact results for the steady-state distributions. Therefore, over the whole range 0 the LL turns out to be an approximation much more accurate than the global linearization proposed by other authors for the same purpose of making the terms of higher order in ₁ vanish. In the short- region the LL leads to results virtually coincident with those of the BFPA. In the large- region the LL is a more accurate approximation than the BFPA itself. These theoretical arguments are supported by the results of both analog and digital simulation.     

Enhancement of conductance fluctuations in two-dimensional mesoscopic electron systems with valley structures

Conductance fluctuations are studied in twodimensional mesoscopic electron system with a two-hold valley degeneracy (n _v =2), which corresponds to the inversion layer of Si-MOSFET formed in (1,0,0) plane. It is shown that the intervalley scattering modifies conductance fluctuations depending on the ratio, Min { _c , _T }/ _v , where _v = ( – 2)/2 and _c , _T , and are, respectively, system traversal time, thermal diffusion time, intervalley scattering time and total life time of electrons. Conductance fluctuations are no longer universal and vary from G _univ 0.862·e ²/h to {ie223-5} at low temperatures even for isotropic systems. The conductance fluctuations increase with decreasing system size, increasing electron density and increasing intervalley scattering time. The effect of intervalley scattering is essentially the same as that of intersubband scattering as previously reported. At finite temperatures where _{T c} , the intervalley scattering modifies the fluctuations through the change in the energy correlation range to results in the reduction of the conductance fluctuations. In Si-MOSFET formed in (1, 1, 1) plane, wheren _v =6, more enhanced fluctuations are expected. Experimental studies are desired on theoretically predicted points.     

A parametric study of surface-discharge nitrogen lasers

A parametric study of sandwich-type discharge chamber nitrogen lasers has been carried out. A non-monotonic dependence of the energy emitted by the laser and the discharge chamber thickness is found. Discharge chambers with = 1 have the best electro-optical efficiency. The ratio between the electrode gap,d, and is found to be a scaling parameter. The possible influence of wall ablation in the comportment is also discussed.     

An Equilibrium Lattice Model of Wetting on Rough Substrates

We consider a semi-infinite 3-dimensional Ising system with a rough wall to describe the effect of the roughness r of the substrate on wetting. We show that the difference of wall free energies (r)= _AW(r)– _BW(r) of the two phases behaves like (r)r(1), where r=1 characterizes a purely flat surface, confirming at low enough temperature and small roughness the validity of Wenzel's law, cos (r)r cos (1), which relates the contact angle of a sessile droplet to the roughness of the substrate     

Luminescence of AgCl excited by u.v. laser light

The spectral distribution and decay of the blue-green luminescence of AgCl has been measured at very low temperatures, using u.v. laser excitation. A structure was observed in the emission band at 77°K. The decay consists of three processes: a) a very fast process which follows the laser pulse (10^–8 sec), b) a fast exponential process which is also observed with low intensity u.v. excitation,(10^–4–10^–5 sec) and, finally, c) a slow exponential process (seconds).