中红外GaInAsSb PIN多结光伏探测器设计与数值模拟

从非平衡载流子的扩散 -复合理论出发 ,提出 PIN多结探测器材料结构 ,并建立了理论模型进行定量计算 ,从理论上解决了不能同时兼顾增大量子效率与光电增益和降低噪声的矛盾。利用该模型对 Ga In As Sb材料体系作了数值模拟 ,单结器件性能的计算值和实测值基本吻合 ,并根据多结器件模拟结果设计了工作于2 .4μm波段的 Ga In As Sb PIN多结材料结构     

GaInAsSb/GaSb PIN红外探测器及其Ⅰ-Ⅴ特性的研究

本文简单介绍了GaInAsSb/GaSb PIN探测器的结构及工作原理,重点分析了生长窗口层和硫钝化两种不同的改善探测器Ⅰ-Ⅴ反向偏软的特性的方法。     

空间遥感用InGaAs短波红外探测器

1μm～3μm红外探测器技术在空间遥感领域有着重要的应用。由于很多物质在该波段具有独特的光谱特性,因此短波红外探测器在空间对地探测如了解资源分布、土壤水分监测、大气成分分析、农作物估产等方面有着重要的作用。制备该波段红外探测器的材料主要有In-     

基于InAs/GaSb超晶格的中波段红外焦平面材料生长与器件制备

本文展示了基于InAs/GaSb二类超晶格材料的中红外焦平面器件制备研究。探测器材料由400周期的结构为8ML InAs /8ML GaSb 的超晶格构成。超晶格材料通过分子束外延技术在N 型GaSb(100)衬底上生长。超晶格层与GaSb衬底层的失配被降低到148.9ppm,通过高分辨X射线衍射分析得到超晶格层的1级衍射峰半缝宽达到28arcsec.。单元探测器和128×128像元红外焦平面通过柠檬酸系腐蚀配方制备完成。通过I-V测试分析表明器件工艺中的化学和物理钝化能够有效降低器件的表面漏电流。最终单元探测器件在77K温度下50%截止波长为4.73微米,R₀A 达到 10³Ωcm²量级。最后我们对焦平面器件进行了成像实验,测试条件为积分时间0.5ms,光圈F/2.0,器件黑体平均探测率达到2.01 × 10⁹cmHz^1/2W^-1.。     

InAs/GaSb超晶格红外探测器台面湿法腐蚀研究

研究了不同腐蚀体系对InAs/GaSb超晶格材料台面的刻蚀,并从中选择了由氢氟酸、酒石酸和双氧水构成的酒石酸腐蚀体系。该体系较适合InAs/GaSb超晶格材料的刻蚀,刻蚀速率稳定,下切效应小。进一步研究发现当HF达到一定浓度后不再影响刻蚀速度;在较低的酒石酸和双氧水浓度下,刻蚀速度是由氧化过程控制,且反应速度和双氧水的浓度成正比。腐蚀液配比为酒石酸(3.5g)∶H2O2(4mL)∶HF(1mL)∶H2O(400mL),刻蚀速度约为0.5μm/min。     

CH3 CSNH2/NH4 OH钝化GaInAsSb/GaSb PIN红外探测器

引入一种新的低毒化合物CH3CSNH2/NH 4OH对GaInAsSb化合物探测器的表面进行了钝化处理,可使其暗电流降低一个数量级,动态电阻增大25倍多,且钝化83天后保持良好的钝化效果,取得了与(NH4)2S溶液一样理想的钝化效果.并采用AES和XPS对钝化前后的GaInAsSb材料进行了分析.     

锑化物超晶格红外探测器的研究进展

InAs/InGaSb超晶格具有特殊的能带结构,优越的材料性能,被认为是第三代红外探测器的首选材料。对InAs/InGaSb超晶格的材料性能、材料生长、探测器结构和探测器研究进展进行了介绍,并指出了超晶格探测器进一步发展需要解决的问题及其广阔的应用前景。     

红外椭圆偏振光谱研究GaxIn1—xAsySb1—y材料的禁带宽度

采用红外椭辰我谱研究了与ＧａＳｂ衬底近晶格匹配的不同组分ＧａｘＩｎ１－ｘＡｓｙＳｂ１－ｙ样品位于禁带宽度能量位置之上、附近和之下的室温折射率光谱。根据禁带宽度能量位置附近的折射率增强效率确定了ＧａｘＩｎ１－ｘＡｓｙＳｂ１－ｙ样品的禁带宽度,并发现在组分ｘ＝０．２￣０．３之间禁带宽度随组分ｘ近似于线性变化。     

InAs/GaSb II型超晶格红外探测器的研究进展

InAs/GaSb Ⅱ型超晶格材料理论上性能优于HgCdTe、InSb等红外探测材料,基于成熟的Ⅲ-V族化合物材料与器件工艺,使得Ⅱ型超晶格材料容易满足均匀大面阵、双色或多色集成等红外探测器的要求,因而InAs/GaSb Ⅱ型超晶格材料将逐步替代HgCdTe、InSb等材料成为第三代红外探测器的首选材料。本文阐述了InAs/GaSb超晶格红外探测器的基本原理、以及材料生长和器件结构,并对其研究进展进行了综述性介绍。     

Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000–60000 cm²/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2–200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga_1?x In_xAs_ySb_1?y /GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 × 10¹⁸ cm^?3; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.     

Emission distribution in GaInAsSb/GaSb flip-chip diodes

Results obtained in studies of the near-field pattern of GaInAsSb IR flip-chip light-emitting diodes (LEDs) operating in the 2 μm range are presented. The electrical and reflective properties of ohmic contacts are discussed and the near-field emission distribution is analyzed in relation to the current and electrical and geometrical parameters of the LEDs.

     

GaInAsSb/GaSb infrared photodetectors prepared by MOCVD

GaInAsSb/GaSb heterojunction photodetectors have been grown by metalorganic chemical vapour deposition (MOCVD). The room temperature performances of the photodetectors are described. The responsivity spectrum is peaked at 2.25 μm and cut off at 1.7 μm in the short wavelength and at 2.4 μm in the long wavelength, respectively. The room temperature detectivity D* is 10⁹ cm Hz W^-1 at 2.25 μm     

GaInAsSb/GaSb pn photodiodes for detection to 2.4 mu m

Ga/sub 0.77/In/sub 0.23/As/sub 0.20/Sb/sub 0.80//GaSb pn heterojunction photodiodes have been prepared by liquid phase epitaxy. They exhibit a long-wavelength threshold of 2.4 mu m. The room-temperature dark current at V=-0.5 V is 3 mu A (10 mA/cm/sup 2/) and the external quantum efficiency is around 40% in the wavelength range 1.75-2.25 mu m. The estimated detectivity D* at 2.2 mu m is 8.8*10/sup 9/ cm Hz/sup 1/2/ W/sup -1/.<>     

High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 ?m

Front-illuminated diffused-junction PIN mesa photodiodes for use at wavelengths up to 23 pm are described. The impulse response is 160 ps FWHM at ?10 V bias, and the external quantum efficiency is 56%. The detector responds to pseudorandom modulation at bit rates up to 2 Gbit/s.     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

CH3 CSNH2/NH4 OH钝化GaInAsSb/GaSb PIN红外探测器

引入一种新的低毒化合物CH3CSNH2/NH 4OH对GaInAsSb化合物探测器的表面进行了钝化处理,可使其暗电流降低一个数量级,动态电阻增大25倍多,且钝化83天后保持良好的钝化效果,取得了与(NH4)2S溶液一样理想的钝化效果.并采用AES和XPS对钝化前后的GaInAsSb材料进行了分析.     

CH3CSNH2/NH4OH钝化GaInAsSb/GaSb PIN红外探测器

引入一种新的低毒化合物CH3CSNH2/NH4OH对 GaInAsSb化合物探测器的表面进行了钝化处理，可使其暗电流降低一个数量级，动态电阻增大25倍多，且钝化83天后保持良好的钝化效果，取得了与（NH4)2S溶液一样理想的钝化效果. 并采用AES和XPS对钝化前后的GaInAsSb材料进行了分析.     

Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C

Development of immersion-lens photodiodes based on GaInAsSb alloyss with long-wavelength photosensitivity cutoffs at 2.05 and 2.25 μm (20°C) is reported. Spectral and current-voltage characteristics and the effect of the design of a photodiode on its detectivity in the temperature range 20–140°C are discussed.