Study of the third order nonlinear optical properties of Zn<Subscript>1−x</Subscript>Mg<Subscript>x</Subscript>Se and Cd<Subscript>1−x</Subscript>Mg<Subscript>x</Subscript>Se crystals

Third order nonlinear optical susceptibilities χ^<3> of ternary Zn_1−xMg_xSe and Cd_1−xMg_xSe crystals have been measured using standard degenerate four-wave mixing (DFWM) method at 532 nm. The nonlinear transmission technique has been applied to check if our crystals exhibit two-photon absorption. The studied Zn_1−xMg_xSe and Cd_1−xMg_xSe solid solutions were grown from the melt by the modified high-pressure Bridgman method. For both crystals the energy gap increases with increasing Mg content. In the case of Zn_1−xMg_xSe, it was found that the value of third order nonlinear optical susceptibility χ^<3> decreases with increasing Mg content. An explanation of this behaviour results from the dependence of optical nonlinearities on the energy band gap E_g of the studied crystals. In the case of Cd_1txMg_xSe with low content of Mg, no response was observed for the studied wavelength since the energy gap in such crystals is smaller than the photon energy of the used laser radiation. It was also found that the value of third order nonlinear optical susceptibility χ^<3> for Cd_0.70Mg_0.30Se is higher than for Zn_0.67Mg_0.33Se. This behaviour can be understood if one take into consideration that the free carrier concentration in Cd_1−xMg_xSe samples is about four orders of magnitude higher than that in Zn_1txMg_xSe ones with comparable Mg content respectively. It is commonly known that when the electric conductivity increases, the values of nonlinear optical properties increase. From the performed measurements one can conclude that the incorporation of Mg as constituent into ZnSe and CdSe crystals leads to a change of the third order nonlinear optical susceptibilities.     

Raman scattering and optical normal vibrations of the Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>x</Subscript>Se crystal lattice

The nonresonant spectra of the Raman scattering in Zn_1?xCd_xSe crystals (0≤ x≤1) are investigated. The mode doublet was found to gradually shift with increasing x from the longitudinal-transverse frequencies of ZnSe to the longitudinal-transverse frequencies of CdSe. Furthermore, an additional branch of weak modes was observed between the doublet components. The frequencies of this branch are shown to correspond to the frequencies of the cadmium impurity vibrations in the ZnSe lattice at x=0 and the zinc impurity vibrations in the CdSe lattice at x=1. The concentration dependences of the modes and atomic displacements are analyzed by using the isodisplacement model that includes the interaction between ZnSe-and CdSe-like vibrations. It is concluded that a one-mode behavior with the formation of an additional weak branch in the longitudinal-transverse splitting region is characteristic of this system.     

Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable In_xGa_1−xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100–200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control “nonaligned” InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.     

Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell

In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiO _x amorphous oxide layer. The n-type doped SiO _x :H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiO _x :H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiO _x emitter layer using also numerical simulations.     

Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry

This paper presents the influence of Ar⁸⁺ and O⁶⁺ ion implantation on the recombination parameters of n and p type Si samples. These parameters were determined from the fitting of theoretical characteristics to the experimental photothermal radiometric (PTR) characteristics. We found that with the increasing ion implantation doses (i) the changes of the bulk recombination lifetimes and the carrier diffusivity were not observed; (ii) the increasing of the surface recombination velocities and the parameter A were observed. This paper also proves that it is possible to interpret the experimental PTR characteristics with a relatively simple effective model of a PTR signal.     

Investigation on optical transmission spectra of (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals

The optical transmission spectra from 0.3 to 11 μm of relaxor ferroelectric single crystals (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) were systematically studied at room temperature in this paper. The crystal is transparent between 0.45 and 5.5 μm and becomes completely absorbing around 0.4 μm in near UV region and 10 μm in infrared region. But the wavelength cutoff in near UV is much sharper than the long wavelength cutoff. As compared with other configurations, tetragonal single crystals possess the optimal transmission properties. The optical transmittance in the wavelength region from 0.45 to 5.5 μm is about 70%. The results show that tetragonal PMN-xPT single crystals are promising for a wide range of optical applications. Some discussions about the oxygen-octahedra structure that determines the basic energy level of the crystals are also presented on the optical properties of PMN-xPT single crystals.     

Low toxic and highly luminescent CdSe/Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S quantum dots with thin organic SiO<Subscript>2</Subscript> coating for application in cell imaging

A silanization process was employed to transfer hydrophobic quantum dots (QDs) prepared via an organic route at high temperature into water phase. The QDs were further coated with a thin organic SiO₂ shell to form QDs@SiO₂ composite nanoparticles by ligand exchange or remaining initial organic ligands on the surface. In this study, QDs with different ligands, either trioctylphosphine oxide (TOPO) or oleic acid (OA), were employed to investigate the effects of ligands on the reverse micelles in preparing QDs@SiO₂ nanoparticles. In the preparing process, hydrophobic QDs were silanized by partially hydrolyzed tetraethyl orthosilicate (TEOS). For TOPO-capped CdSe QDs, surface TOPO ligands were completely replaced by partially hydrolyzed TEOS. As for OA-capped CdSe/Cd _x Zn_1?x S QDs, surface OA ligands were partially replaced. It was found that the ligand exchange drastically reduced the photoluminescence (PL) efficiency of CdSe QDs. Furthermore, the cytotoxicity studies of QDs@SiO₂ have been carried out in detail. The results indicate that CdSe/Cd _x Zn_1?x S QDs@SiO₂ composite nanoparticles exhibit lower cytotoxicity compared with CdSe QDs@SiO₂, because the SiO₂ shell and remained OA ligand layer can effectively prevent the leakage of toxic Cd²⁺ ions. Meanwhile, it was found that these CdSe/Cd _x Zn_1?x S QDs@SiO₂ nanocomposites could keep excellent PL properties even for 24 h incubating with Siha cells, which indicating that our prepared composite nanoparticles are potentially applicable for cell imaging in biological systems.     

Spectral kinetics of Ce<Superscript>3+</Superscript> ions in double-fluoride crystals with a scheelite structure

The influence of the cation composition on the spectral kinetics of Ce³⁺ ions in double-fluoride crystals with a scheelite structure is studied. The importance of the photodynamic processes induced in these crystals by the exciting radiation is demonstrated. The difference in luminescence quantum efficiency between Ce³⁺ ions in LiYF₄ and LiLuF₄ crystals is found to be due to the different lifetimes of color centers produced in the samples by the exciting radiation and to the different efficiency of the free-carrier recombination at cerium impurity centers. It is shown that Yb³⁺ ions can increase the carrier recombination rate in the crystals.     

Laser-induced changes in the photoelectric properties of MnxHg1−xTe crystals

The application of pulsed laser irradiation to photoconductive n-Mn_xHg_1−xTe crystals was investigated as a possible procedure for modifying their photoelectric characteristics and increasing the photosensitivity. The photoconductivity spectra and the temperature dependences of the excess carrier lifetime of Mn_xHg_1−xTe crystals, subjected to laser irradiation with nanosecond ruby laser pulses, were studied. It was found that a range of energy density of laser pulses can be chosen to decrease the surface recombination rate and to increase the photosensitivity of the crystals. Changes in the photoelectric properties of the irradiated samples are attributed to the laser-stimulated cleaning of the surface as well as to modification of the defect structure of Mn_xHg_1−xTe crystals.     

Growth and characterization of Nd:Lu3ScxGa5 − xO12 series laser crystals

A new series Nd:Lu₃Sc_xGa_5 − xO₁₂ (x = 0.5, 0.8, 1, 1.2 and 1.5) laser crystals have been successfully grown by the optical floating zone method. Their absorption and luminescence spectra were measured at room temperature and spectral parameters were systemically calculated using Judd-Ofelt (JO) theory. The fluorescence τ_f lifetimes were experimentally measured and compared with the theoretical results. Diode-pumped continuous-wave (CW) laser performance at 1.06 μm with mixed crystals was demonstrated. The influence of different x values on laser performance and spectral parameters was also discussed. All the results show that Nd:Lu₃Sc_xGa_5 − xO₁₂ series crystals should be suitable for laser application.     

Low temperature thermoelectric properties of Bi2−xSbxTeSe2 crystals near the n–p crossover

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi_2?xSb_xTeSe₂ crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p–n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.     

Carrier tuning of type-I clathrate single crystals

A method to precisely control the carrier properties for single crystalline type-I clathrate is investigated. Polycrystalline samples are synthesized first according to the theoretical ratio for carrier control, and followed by Ga flux single crystal growth process. The composition of single crystals was determined by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP), and the detailed structure was determined by using high-resolution X-ray diffraction. The carrier type and concentration can be tuned by changing the Ba/Ga composition for Ba₈Ga₁₆Ge₃₀ (BGG), while only n-type carrier can be achieved in Sr₈Ga₁₆Ge₃₀ (SGG). X-ray diffraction analysis shows that the different occupancy factors of the endohedral chemical species may be the reason for this carrier difference between BGG and SGG.     

Subnanosecond luminescence spectroscopy of Cd1−xMnxSe under high intensity optical excitation

Transient photoluminescence of Cd_1?xMn_xSe has been investigated for compositions x = 0, .05 and .10, in zero magnetic field, under high excitation intensity. The spectra yield information about the temporal evolution of inelastic scattering processes in a dense exciton gas, with a likely contribution by an electron-hole plasma. The short carrier lifetimes measured, less than 100 psec for x = .10, and a possible plasma expansion, might inhibit the generation of carrier densities sufficient for suggested exchange induced magnetic ordering.     

Band-to-band recombination in GaxIn1−xSb

The carrier lifetimes in Ga_xIn_1−xSb for radiative and Auger recombination are calculated for the temperature range 77–300 K and the composition range 0 ⩽ x ⩽ 1. The possible band-to-band Auger recombination mechanisms in direct-gap semiconductors are investigated. The Auger rates are calculated, including Boltzmann statistics and nonparabolic bands, using the Kane-band model. In the low temperature range, for lightly doped material, the carrier lifetime is determined by radiative recombination. At higher temperatures the CHCC process is dominant in n-type Ga_xIn_1−xSb but in p-type material the CHLH process is dominant. The influence of CHSH processes on the carrier lifetime is appreciable in p-type GaSb. The calculations are compared with experimental data reported by other authors.     

Optical properties of (In2Se3)1–x·(CuIn5Se8)x solid solutions

Single crystals of In₂Se₃ and CuIn₅Se₈ compounds and (In₂Se₃)_1–x·(CuIn₅Se₈)_x solid solutions have been grown from the melt using the Bridgman method and their composition and structure determined. It is shown that the crystals have n-type conductivity. Their transmission spectra were studied in the self-absorption edge region at 80 and 295 K. Based on the spectral measurements, the band gap width (E_g) was determined and the band gap concentration dependences were plotted. It is found that E_g varies with the x composition nonlinearly. Using the dielectric model of Van Vechten–Bergstresser and the Hill–Richardson pseudo potential model, E_g(x) was calculated theoretically.     

Luminescence and gain spectroscopy of disordered CdS1−x Se x under high excitation

The absorption-, reflection-, and luminescence spectra of CdS_1–x Se _x are measured under low excitation. The luminescence under high excitation is also observed. For the first time, the gain spectra of disordered crystals are investigated with the excite- and probebeam technique to get a better understanding of the high density electron-hole pair system in this type of materials. We compare the results with those obtained in pure CdS and CdSe.     

Arguments for p-type Si 1 − xGe x/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared

An analysis, by a carrier scattering approach, of the thermionic emission contribution to the dark current is carried out in conventional bound-to-continuum quantum well infrared photodetectors (QWIPs). It is found that the thermionic emission increases with increasing temperature or when extending the detection wavelength from mid- to far-infrared. Considering p-type instead of n-type material, however, the increased effective mass decreases the thermionic emission. Designs for mid- and far-infrared p-type QWIPs based on the Si _1 − xGe _x/Si system are discussed for both normal and non-normal incident geometries.     

The method for calculation of carrier concentration in narrow-gap n-type doped Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te structures

A simple method for the computation of carrier concentration in n-type doped Hg_1?xCd_xTe (MCT) structures is proposed. The method is based on the postulate of the existence of donor bands. In our model the donor bands are postulated to have a Gaussian distribution of density of states characterized by two parameters only (mean energy for this distribution and standard deviation). These parameters could be obtained with experimental data, which were comprised of a wide range of doping levels for various kinds of dopants.     

Charge carrier decay and diffusion in organic–inorganic CH3NH3PbI3–xClx perovskite based solar cell

In recent years, organic–inorganic lead halides attracted widespread interest, mainly due to their impressive photoconversion properties and low‐cost solution processing. In this study, we employed small amplitude transient photovoltage and photocurrent spectroscopy to investigate charge transport and recombination properties of perovskite CH₃NH₃PbI_3–xCl_x solar cell under realistic light harvesting conditions (<1 sun). Cell structure resembles outlay commonly found in organic photovoltaics, with perovskite absorber being sandwiched between two thin layers of organic polymers. Tested device displayed high power conversion efficiency (10.3%), good fill factor and negligible hysteresis effect. Fundamental device parameters were characterized at various open‐circuit voltages (V_oc) by examination of small voltage and current perturbations created by the low intensity pulsed laser excitations. The obtained results exhibit long charge carrier lifetimes and fast charge transport over the full range of applied optical bias, as well as remarkable diffusion lengths exceeding 1 μm. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Magnetic interaction and carrier concentration in GdN and GdN1−xOx

Single crystals of GdN_1?xO_x, 0 < x < 0.25, have been prepared and the dependence of the magnetic properties on the carrier concentration has been investigated. It is shown that pute and uncontaminated GdN is a metamagnetic semimetal. Nitrogen substitution by oxygen results in an increase of carrier concentration and a change from metamagnetism over ferromagnetism to antiferromagnetism.