电场调谐InAs量子点荷电激子光学跃迁

在低温5 K下, 采用光致发光光谱及外加偏压调谐量子点电荷组态研究了InAs单量子点的精细结构和对应发光光谱的偏振性、不同带电荷激子的圆偏振特性. 得出如下结果: 1) 指认InAs单量子点中不同荷电激子的发光光谱和对应的激子本征态的偏振特性; 2) 外加偏压可以调谐量子点的荷电激子的发光光谱; 3) 伴随着电子、空穴的能量弛豫, 电子的自旋弛豫时间远大于空穴的自旋弛豫时间. 关键词： InAs量子点 激子 荧光光谱 电场调谐     

InAs 单量子点中级联辐射光子的关联测量

利用分子束外延生长InAs单量子点样品,温度为5 K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT) 实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程. 关键词： InAs 单量子点 单、双激子 荧光光谱 级联辐射     

神经网络法研究多溴代二苯胺热力学性质

通过时间分辨光谱技术详细地研究了ZnCuInS/ZnSe/ZnS量子点的激子弛豫动力学. 基于速率分布模型,波长依赖的发射动力学表明本征激子、界面缺陷态中的激子、给-受体对态中的激子都会参与量子点的发光过程,整个发光过程主要依赖于给-受体对态发射. 瞬态吸收数据表明激发后本征激子和界面缺陷物种可能会同时出现,在高激发光强下,光强依赖的俄歇复合过程也存在于量子点中     

CdTe量子点的室温激子自旋弛豫动力学

利用交叉偏振三阶非线性瞬态光栅技术,研究了室温下CdTe胶体量子点激子自旋弛豫动力学的尺寸效应.在抽运-探测光子能量与CdTe量子点的最低激子吸收(1Se—1Sh)跃迁相共振时,量子点激子自旋弛豫显示了时间常数为0.1—0.5 ps的单指数衰减行为.CdTe量子点激子自旋的快速弛豫源于亮暗激子精细结构态跃迁,即J=±1←→■2跃迁.激子自旋弛豫主要由空穴的自旋翻转过程决定.研究结果表明:CdTe量子点激子自旋弛豫速率与量子点尺寸的4次方成反比.     

玻璃中CuCl微晶的尺寸量子化激子

通过对尺寸分布非均匀加宽的激子吸收带选择激发的方法,研究了玻璃中几个nm量级的CuCl微晶的激子发光光谱.发现尺寸量子化的激子态劈裂形成多个分量.通过对尺寸量子化所产生的球形微晶中激光跃迁能级劈裂的分析,得到CuCl的z_(1.2)激子跃迁质量,Luttinger参数以及x线性项系数等数据.     

激子自旋弛豫对简并量子点发射光子对纠缠度的影响

利用粒子数运动方程和量子回归理论，计算了单个半导体量子点双激子体系脉冲激发下粒子在各能级间辐射跃迁的二阶交叉相关函数以及系统发射光子对的偏振密度矩阵.分析了激子态能级简并量子点体系发射光子对偏振纠缠特性，讨论了纠缠度随激子态间自旋弛豫的变化关系.研究表明，激子自旋弛豫会破坏该系统发射光子对的纠缠度. 关键词： 纠缠光子对 半导体量子点 二阶相关函数     

InAs/GaAs单量子点中电子/空穴自旋弛豫

利用分子束外延制备了三种类型量子点样品,它们分别是:未掺杂样品、n型Si调制掺杂样品和p型Be调制掺杂样品。在5 K温度下,采用共聚焦显微镜系统,测量了单量子点的光致发光谱和时间分辨光谱, 研究了单量子点中三种类型激子(本征激子、负电荷激子和正电荷激子)的电子/空穴自旋翻转时间。它们的自旋翻转时间常数分别为: 本征激子的自旋翻转时间约16 ns, 正电荷激子中电子的自旋翻转时间约2 ns, 负电荷激子中空穴的自旋翻转时间约50 ps。     

单量子点的发光与应用EI北大核心CSCD

由于量子限制效应,自组装半导体单量子点具有类似于原子的分立能级,可实现高不可分辨、高亮度和高纯度的单光子发射,其多种激子态能够产生不同偏振模式的光子。而光学微纳结构是调控量子点发光性质的有效手段,当单个量子点与光学微腔发生弱耦合时,Purcell效应将大大提高量子点作为单光子源或纠缠光子对源的性能。同时,量子点与光学微腔的强耦合系统可以作为量子光学网络中的量子节点,以及用于研究单光子水平的光学非线性效应。利用量子点与光学波导的耦合可实现固态量子比特和飞行光子比特的相干转换,以及高效的信息处理与传输,由此构建可靠的片上光学网络。此外,单量子点还具有可操控的自旋态,可作为量子比特的载体。考虑到量子点器件的制备过程易与成熟的半导体技术相结合,基于量子点的器件设计具有良好的可扩展性和集成化潜力。     

纤锌矿ZnSnN2/InxGa1−xN柱形量子点中的激子态和带间光跃迁

基于有效质量近似和变分原理,考虑内建电场效应和量子点的三维约束效应,理论研究了纤锌矿ZnSnN2/Inx Ga1?x N柱形量子点中基态激子结合能、带间发光波长、激子辐射寿命随量子点尺寸(高度L和半径R)及Inx Ga1?x N中In含量x的变化关系,并与Inx Ga1?x N/GaN量子点的激子态和带间光跃迁作比较....     

单量子点光谱与激子动力学研究进展

胶体半导体量子点具有宽带吸收、窄带发射、发光量子产率高、发射波长连续可调等优点,是制备发光二极管、太阳能电池、探测器、激光器等光电器件的优质材料.单量子点光谱能够消除系综平均效应,可以在单粒子水平上获取量子点材料的结构和动力学信息及与其他材料间的电荷、能量转移动力学等.相关研究结果能够指引量子点材料的设计和为量子点的相关应用提供机理基础.另外基于单量子点可以开展纳米尺度上光与物质的相互作用研究,制备单光子源和纠缠光子源等.本文综述了单量子点光谱与激子动力学近期的相关研究进展,主要包括单量子点的光致发光闪烁特性和调控方式、单激子和多激子动力学研究及双激子辐射特性的调控等.最后简要地讨论了单量子点光谱未来可能的发展趋势.     

InAs/GaAs量子点1.3 μm单光子发射特性

采用双层耦合量子点的分子束外延生长技术生长了InAs/GaAs量子点样品,把量子点的发光波长成功地拓展到1.3 μm.采用光刻的工艺制备了直径为3 μm的柱状微腔,提高了量子点荧光的提取效率.在低温5 K下,测量得到量子点激子的荧光寿命约为1 ns;单量子点荧光二阶关联函数为0.015,显示单量子点荧光具有非常好的单光子特性;利用迈克耳孙干涉装置测量得到单光子的相干时间为22 ps,对应的谱线半高全宽度为30 μeV,且荧光谱线的线型为非均匀展宽的高斯线型.     

Highly reduced fine-structure splitting in InAs/InP quantum dots offering an efficient on-demand entangled 1.55-microm photon emitter

To generate entangled photon pairs via quantum dots (QDs), the exciton fine-structure splitting (FSS) must be comparable to the exciton homogeneous linewidth. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens microeV. To achieve photon entanglement, it is necessary to cherry-pick a sample with extremely small FSS from a large number of samples or to apply a strong in-plane magnetic field. Using theoretical modeling of the fundamental causes of FSS in QDs, we predict that the intrinsic FSS of InAs/InP QDs is an order of magnitude smaller than that of InAs/GaAs dots, and, better yet, their excitonic gap matches the 1.55 microm fiber optic wavelength and, therefore, offers efficient on-demand entangled photon emitters for long distance quantum communication.     

GaAs间隔层厚度对InAs/GaAs量子点分子光学性质的影响

采用光致荧光发射谱(PL)和时间分辨荧光发射谱(TRPL)研究了GaAs间隔层厚度对自组装生长的双层InAs/GaAs量子点分子光学性质的影响.首先,测量低温下改变激发强度的PL谱,底层量子点和顶层量子点的PL强度比值随激发强度发生变化,表明两层量子点之间的耦合作用和层间载流子的转移随着间隔层厚度变大而变弱.接着测量改变温度的PL谱,量子点荧光光谱峰值位置(Emax)、半峰全宽及积分强度随温度发生变化,表明GaAs间隔层厚度直接影响到量子点内载流子的动力学过程和量子点发光的热淬灭过程.最后,TRPL测量发现60mL比40mL间隔层厚度样品的载流子隧穿时间有明显延长.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.     

Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures

Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantum dot (QD) structures are investigated by optical orientation spectroscopy. An increase in the optical and spin polarization of the QDs is observed with increasing magnetic field in the range 0-2?T, and is attributed to suppression of exciton spin depolarization within the QDs that is promoted by the hyperfine interaction and anisotropic electron-hole exchange interaction. This leads to a corresponding enhancement in spin detection efficiency of the QDs by a factor of up to 2.5. At higher magnetic fields, when these spin depolarization processes are quenched, the electron spin polarization in anisotropic QD structures (such as double QDs that are preferably aligned along a specific crystallographic axis) still exhibits a rather strong field dependence under non-resonant excitation. In contrast, such a field dependence is practically absent in more 'isotropic' QD structures (e.g.?single QDs). We attribute the observed effect to stronger electron spin relaxation in the spin injectors (i.e.?wetting layer and GaAs barriers) of the lower-symmetry QD structures, which also explains the lower spin injection efficiency observed in these structures.     

Observation of monolayer-splitting for InAs/GaAs quantum dots

A pronounced modulation is observed in the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots (QDs), recorded at low excitation densities. The clearly distinguishable peaks are identified as a multimodal distribution of the ground state transition energy, originating from a discrete, stepwise variation of the structural properties of the QDs, which is associated with an increase of the QD height in monolayer (ML) steps. The observation of a ML splitting implies a flat QD shape with well-defined upper and lower interfaces as well as negligible indium segregation. The electronic properties of the InAs/GaAs QDs were investigated by PL and PL-excitation spectroscopy and are discussed based on realistic calculations for flat InAs/GaAs QDs with a truncated pyramidal shape based on an extended 8-band k·p model. The calculations predict a red shift of the ground state transition with each additional ML, which saturates for heights above 9 ML, is in good agreement with experiment.     

Phonon-assisted polar exciton–transitions in self-organized InAs/GaAs quantum dots

Phonon-assisted exciton transitions are investigated for self-organized InAs/GaAs quantum dots (QDs) using selectively excited photoluminescence (PL) and PL excitation spectroscopy. The results unambiguously demonstrate intrinsic recombination in the coherent InAs/GaAs QDs and the absence of a Stokes shift between ground state absorption and emission. Phonon-sidebands corresponding to a phonon energy of 34 meV are resolved and Huang–Rhys parameters of 0.015 and 0.08 are found for phonon-assisted emission and absorption, respectively, which are about one order of magnitude larger than in bulk InAs. Calculations of the exciton–LO–phonon interaction based on an adiabatic approximation and realistic wave functions for ideal pyramidal InAs/GaAs QDs show this enhanced polar coupling to result from the particular confinement and the strain-induced piezoelectric potential in such strained low-symmetry QDs.     

Optical anisotropy and the direction of polarization of exciton emissions in a semiconductor quantum dot:Effect of heavy-and light-hole mixing

The dependence of the directions of polarization of exciton emissions, fine structure splittings(FSS), and polarization anisotropy on the light-and heavy-hole(LH–HH) mixing in semiconductor quantum dots(QDs) is investigated using a mesoscopic model. In general, all QDs have a four-fold exciton ground state. Two exciton states have directions of polarization in the growth-plane, while the other two are along the growth direction of the QD. The LH–HH mixing does affect the FSS and polarization anisotropy of bright exciton states in the growth-plane in the low symmetry QDs(e.g., C_(2V),C_S, C_1), while it has no effect on the FSS and polarization anisotropy in high symmetry QDs(e.g., C_(3V), D_(2d)). When the hole ground state is pure HH or LH, the bright exciton states in the growth-plane are normal to each other. The LH–HH mixing affects the relative intensities and directions of bright exciton states in the growth-plane of the QD. The polarization anisotropy of exciton emissions in the growth-plane of the QD is independent of the phase angle of LH–HH mixing but strongly depends on the magnitude of LH–HH mixing in low symmetry QDs.