Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition

β-FeSi₂ thin films were prepared on Si (1 1 1) substrates by pulsed laser deposition (PLD) with a sintering FeSi₂ target and an electrolytic Fe target. The thin films without micron-size droplets were prepared using the electrolytic Fe target; however, the surface without droplets was remarkably rougher using the Fe target than using the FeSi₂ target. After deposition at 600 °C and then annealing at 900 °C for 20 h, XRD indicated that the thin film prepared using the Fe target had a poly-axis-orientation, but that prepared using the FeSi₂ target had a one-axis-orientation. The PL spectra of the thin films prepared using the FeSi₂ and Fe targets at a growth temperature of 600 °C and subsequently annealed at 900 °C for 20 h had A-, B- and C-bands. Moreover, it was found that the main peak at 0.808 eV (A-band) in the PL spectrum of the thin films prepared using the FeSi₂ target was the intrinsic luminescence of β-FeSi₂ from the dependence of PL peak energy on temperature and excitation power density.     

Spectroscopic study of potential magneto-optic storage layers

We present an experimental investigation of magneto-optic (MO) thin film materials of interest in optical storage. XPS valence band spectra of ultrahigh vacuum deposited rare earth — Fe₅₀Co₅₀ alloys are correlated to magneto-optic and reflectivity spectra measured ex-situ in the photon energy range 0.5 E _ph 5.5 eV. It is found that 4f ⁿ 4f ^n–15d ¹ optical transitions contribute to room temperature Kerr spectra in Pr-FeCo and Nd-FeCo, but only in the UV spectral region (300 nm). Eu is found to enter Eu-FeCo intermetallic alloys with a 4f ⁷ ground state at –2 eV binding energy. However, no substantial contribution to the Kerr effect from excitations of this electronic state has been observed n either at room temperaturen or at 100 K. We present a general argument that 4f excitations of RE ions in typical intermetallic alloys can never be expected to contribute more than some tenths of a degree to _k in contrast to the well known huge rotations in RE-chalcogenides.For Yb-FeCo we have observed in XPS a mixed valence behavior of Yb showing a discontinuous transition from divalent Yb²⁺ in the pure metal to mixed valent Yb^2.55+ in amorphous Yb-FeCo films. Nofd contributions to the room temperature MO spectra have been detected. Strong optical enhancement effects are presented for metallic bilayer and multilayer structures of the type MO-layer/reflector. The total thickness of an optimized structure corresponds to about two times the penetration depth of light. Enhancement occurs predominantly at photon energies below the plasma frequency of the reflector material and is caused by low values of the optical constantsn andk of the reflector. In storage materials like Tb-FeCo the read-out performance can be improved by about a factor of 2 with a bilayer of 30 nm Tb-FeCo on Cu. Quantitative modelling of the optical and magneto-optic properties of these films is discussed.     

Growth of Ni2Si by rapid thermal annealing: Kinetics and moving species

The growth kinetics is characterized and the moving species is identified for the formation of Ni₂Si by Rapid Thermal Annealing (RTA) of sequentially deposited Si and Ni films on a 100 Si substrate. The interfacial Ni₂Si layer grows as the square root of time, indicating that the suicide growth process is diffusion-limited. The activation energy is 1.25±0.2 eV in the RTA temperature range of 350–450° C. The results extend those of conventional steady-state furnace annealing quite fittingly, and a common activation energy of 1.3±0.2 eV is deduced from 225° to 450° C. The marker experiment shows that Ni is the dominant moving species during Ni₂Si formation by RTA, as is the case for furnace annealing. It is concluded that the two annealing techniques induce the same growth mechanisms in Ni₂Si formation.     

Thermoelectric properties of Mn doped FeSix alloys hot-pressed from nitrided rapidly solidified powders

Manganese doped FeSi_x alloys (x=1.9, 2.0, 2.1, 2.3 and 2.5) with fine grain sizes of about a few micrometers and densifications over 99% have been prepared by vacuum hot-pressing at 975 °C/30 min and annealing at 800 °C/20 h from rapidly solidified powders. In addition to -FeSi₂, a silicon phase was found in the samples in the form of rods of 200 nm in diameter as x>2 and also polyhedrons of several microns in size as x=2.5. Transport property measurements revealed that excess silicon decreases the Seebeck coefficient and the electric conductivity, but increases the thermal conductivity of the -FeSi₂ based alloys, due to the high thermal but low electric conductivity of the silicon particles. A high figure of merit of 2.0×10^-4 K^-1 was obtained for the sample with x=2 at 600 °C. Low thermal conductivity of about 4 W(mK)^-1 between 400 °C and 800 °C for the samples without excess silicon suggests that some dispersed fine nitrides form during the preparation of the samples, which enhance the phonon scattering and reduce the thermal conductivity of the materials. PACS 72.15.Jf; 81.05.Hd; 81.30.Mh     

Porous silicon based β-FeSi2 and photoluminescence

Highly-pure iron powder was covered on porous silicon for fabricating semiconducting β-FeSi₂ structures. X-ray diffraction and Raman scattering results confirm the formation of pure-phase β-FeSi₂ after high-temperature annealing at 1100°C and then long-time persistence at 900°C. Scanning electron microscope observations reveal that large-size (>μm) β-FeSi₂ grains mainly form in the pores of porous silicon and some nanocrystals grow on local surfaces. The temperature-dependent photoluminescence spectra disclose that the observed ∼1.54 μm emission arises from free exciton recombination, which is confirmed via the activation energy (0.25 eV) measurement. Our method provides a way to synthesize single-phase β-FeSi₂ materials.     

The electronic structure of Rhodium: Angle-resolved studies of photoelectron and secondary electron emission

We report electron spectroscopic studies of the Rh(111) surface, with the aim to obtain bulk band-structure information. We have measured normal photoemision using tunable synchrotron radiation in the range of photon energies between 11 eV and 55 eV, and angle-dependent photoemission along the LUX and LKL azimuths using the He resonance lines (=21.2 eV, 40.8 eV). To complement these data, we studied angleresolved secondary electron emission after excitation with electrons and photons. We derive parts of the one-electron energy dispersionE(k) along L, and determine the energies of several bulk critical points (in eV):E(> ₇₊/₈₊)=–2.75±0.10,E(> ₈₊=–0.85±0.10,E(> _7–=16.1±0.5,E(> _6–/> _8–)=20.5±0.5,E(X ₇₊)=–5.0±0.1,E(L ₆₊)=–5.6±0.5,E(L ₆₊/L ₄₊₊₅₊)=–2.65±0.10,E(L ₆₊)=9.0±0.5 eV. Our results are compared to several available band structure calculations.     

Structural phase transition and internal fields in rubidium thiocyanate probed through vibrational spectroscopy

A comprehensive vibrational study of Rubidium thiocyanate (RbNCS), in the 298–448°K range reveals that the orthorhombic to tetragonal transition atT _c440°K is of order-disorder type exhibiting purely second order characteristics. A consistent order-parameter exponent 0.45±0.04 has been obtained from both Raman and IR measurements. In the Raman spectra, the appearance of sidebands in both the C–N&C–S stretching modes and their temperature dependence indicate the existence and a gradual diminution of internal electric field asT approachesT _c. These results have been discussed in the context of an anharmonic oscillator model. An activation energy (U) for the reorientational motion of NCS^– ions,U0.29±0.02 eV, has been calculated from large changes in the bandwidth (_C-N) nearT _c.     

Electron Energy Loss Spectra of the Organic Complexes of Europium

In the electron energy loss spectra (EELS) of the organic europium complexes Eu³⁺ (BTFA)₃TPPO and Eu³⁺(BrBTFA)₃TPPO in a gas phase obtained on excitation by monokinetic beams of electrons of different energies in the range 12–50 eV, we have identified the bands associated with the electron transitions S ₀–S ₁, S ₀–S ₂, and S ₀–S ₃. The connection of these transitions with the structural groups of the complexes is established. The addition of the bromine atom to the phenyl ring of diketonate leads to the rise in the relative intensity of the S ₀–S ₂ band. The singlettriplet transitions manifest themselves in the region 2.5–3.2 eV and contribute to the S ₀–S ₂ band of the electron energy loss spectra.     

Bremsstrahlung-induced Auger transitions and photoemission in elemental red phosphorus

Measurements of the Bremsstrahlung-inducedK-LL andK-LM Auger transitions in red phosphorus are reported and compared with semi-empirical data. The relative intensities of theK-LL lines are in excellent agreement with predictions based on the intermediate coupling scheme including configuration interaction. There is, however, a disagreement between the predicted and the experimental values of the kinetic energies. The origin of this discrepancy is due to inaccurate binding energy values used in earlier semiempirical estimations. Revised semi-empirical energy values based on reliable binding energies determined by internal and conventional x-ray photoemission are in excellent agreement with the experimental data. The energy of the x-rayK radiation is 2,013.8±0.4 eV, the Wagner's Auger parameter amounts to 1,987.2±0.1 eV in elemental red phosphorus, and to 1,983.9±0.5 eV in phosphorous oxide.     

Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition

β-FeSi₂ thin films were prepared on FZ n-Si (1 1 1) substrates by pulsed laser deposition (PLD). The structural properties and crystallographic orientation of the films were investigated by X-ray diffraction (XRD) analysis. This indicates that β-FeSi₂/Si (2 0 2/2 2 0) and the single-crystalline β-FeSi₂ can be prepared using PLD. In photoluminescence (PL) measurements at 8 K detected by Ge detector, the PL spectra of the samples annealed at 900 °C for 1, 5, 8 and 20 h showed that the PL intensity of the A-band peak increased depending on annealing time in comparison with those of as-deposited samples. The intrinsic PL intensity of the A-band peak at 0.808 eV of the β-FeSi₂ from the 20-h-annealed sample was investigated for the first time by the PLD method detected by an InGaAs detector. This result has been confirmed by temperature dependence and excitation power density of the 20-h-annealed sample with the comparison of other defect-related band peaks of the sample. Cross-sectional scanning electron microscopy (SEM) observation was also performed and the thickness of the thin films was found to be at 75 nm for 20-h-annealed. The thermal diffusion for the epitaxial growth of β−FeSi₂/Si was observed when the compositional ratio of Fe to Si was around Fe:Si=1:2 for 20-h-annealed carried out by energy dispersive X-ray spectroscopy (EDX). We discussed high crystal quality of the epitaxial growth and optical characterization of β-FeSi₂ achieved after annealing at 900 °C for 20 h.     

纳米β-FeSi2/a-Si多层膜室温光致发光分析

采用射频磁控溅射的方法,在Si（100）基片上制备了纳米β-FeSi₂/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi₂/Si多层结构的结构、成分和光致发光特性.研究结果表明：利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi₂的1.53 μm处光致发光信号;未退火时多层膜是（非晶的FeSi₂+β-FeSi₂颗粒）/非晶Si结构,退火后则是 关键词： 2')" href="#">β-FeSi₂ 磁控溅射 XRD 光致发光光谱     

Some photoelectric properties of the nucleic acid bases in thin layers

The current-voltage characteristics of dark-conductivity and photoconductivity, the lux-ampere characteristics, the spectral dependence of photoconductivity and the relative quantum efficiency of vacuum deposited layers of adenine, thymine, uracil and cytosine were investigated at room temperature. The following values of photoconductivity thresholdE _th were obtained: 3·81 ±± 0·1 eV for adenine; 3·69±0·1 eV for thymine; 3·80±0·1 eV for uracil; 3·77 ± 0·1 eV for cytosine.It may be shown thatE _th is most probably the threshold value for intrinsic photoconductivity of NA bases and, consequently, corresponds to the first electron conductivity levelE _c or at leastE _c >E_th. The possible energy diagram of the NA bases is evaluated.     

CEMS Investigations of Fe-Silicide Phases Formed by the Method of Concentration Controlled Phase Selection

Conversion electron Mössbauer spectroscopy (CEMS) measurements have been made on Fe-silcide samples formed using the method of concentration controlled phase selection. To prepare the samples a 10 nm layer of Fe₃₀M₇₀ (M=Cr, Ni) was evaporated onto Si(100) surfaces, followed by evaporation of a 60 nm Fe layer. Diffusion of the Fe into the Si substrate and the formation of different Fe–Si phases was achieved by subjecting the evaporated samples to a series of heating stages, which consisted of (a) a 10 min anneal at 800°C plus etch of the residual surface layer, (b) a further 3 hr anneal at 800°C, (c) a 60 mJ excimer laser anneal to an energy density of 0.8 J/cm², and (d) a final 3 hr anneal at 800°C. CEMS measurements were used to track the Fe-silicide phases formed. The CEMS spectra consisted of doublets which, based on established hyperfine parameters, could be assigned to - or -FeSi₂ or cubic FeSi. The spectra showed that -FeSi₂ had formed already at the first annealing stage. Excimer laser annealing resulted in the formation of a phase with hyperfine parameters consistent with those of -FeSi₂. A further 3 hr anneal at 800°C resulted in complete reversal to the semiconducting -FeSi₂ phase.     

Improved slow-positron yield using a single crystal tungsten moderator

A well-annealed W(110) single crystal was used as a fast-to-slow positron moderator. The measured moderator efficiency at room temperature using a⁵⁸Co positron source in the backscattering geometry is =(3.2±0.4)×10^–3, roughly a factor of three better than for the best previously reported Cu(111)+S moderator. We find a stable positron moderation efficiency over a period of several weeks when maintained at pressures around 10^–9 Torr and an energy spreadE = 0.7 eV of the emitted slow positrons. An initial attempt was made to fabricate a hybrid Cu on W(110) moderator, which yielded of about 1.2×10^–3 after annealing.     

Mössbauer Optimization of the Direct Synthesis of β-FeSi2 by Ion Beam Mixing of Fe/Si Bilayers

At present, there is an increasing interest in the iron di-silicide phase -FeSi₂, which is supposed to be a direct band gap semiconductor and one of the most promising materials for silicon-based optoelectronics, e.g., light-emitting devices, solar cells, and photo detectors. But this phase is very difficult to be produced. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 400 to 600°C is reported. The aim of the experiments was to achieve a complete reaction of the deposited Fe layer with the Si substrate that results in the formation of a pure, single-phased -FeSi₂ surface layer. The obtained silicide layers, their structure and composition are investigated by conversion electron Mössbauer spectroscopy (CEMS), Rutherford backscattering spectrometry (RBS), and X-ray diffraction (XRD). The fraction of the -FeSi₂ formed is determined by CEMS as function of ion species, energy, fluence and temperature. Complete growth and formation of a single-phased -FeSi₂ layer was achieved by 205 keV Xe ion irradiation at a fluence of 2×10¹⁶ ions/cm² at 600°C.     

Buried (Fe1-xCox)Si2 layers with variable band gap formed by ion beam synthesis

Buried layers of (Fe_{1 –x} Co _x )Si₂ were prepared by sequent implantation of iron and cobalt into (100) silicon. The depth distributions of iron and cobalt and the atomic concentration ratio silicon/metal were determined by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). The phase composition and the microstructure of the silicide layer were studied by X-ray diffraction and electron microscopy. The band gap energy was evaluated from Infrared (IR) reflection and transmission experiments. The semiconducting-FeSi₂ structure remains stable up to a cobalt fraction ofx = 0.2 if the iron silicide is stabilized by an intermediate annealing between iron and cobalt implantation. With increasing cobalt content, the electrical resistivity as well as the energy of the direct band gap of the (Fe_{1 –x} Co _x )Si₂ layer decrease. In this way, a band gap tuning between 0.84 and 0.70 eV is possible. The gap energy is found to vary quadratically with the Co content in the composition range 0 <x < 0.15.     

Non-thermal laser-induced desorption of metal atoms with bimodal kinetic energy distribution

Laser-induced desorption of metal atoms at low rate has been studied for pulsed excitation with wavelengths of = 266, 355, 532 and 1064 nm. For this purpose sodium adsorbed on quartz served as a model system. The detached Na atoms were photo-ionized with the light of a second laser operating at = 193 nm and their kinetic energy distribution was determined by time-of-flight measurements. For = 1064 nm a distribution typical of thermal bond breaking is observed. If desorption, however, is stimulated with light of = 266 or 532 nm, the kinetic energy distribution is non-thermal with a single maximum atE _kin = 0.16 ± 0.02 eV. For = 355 nm the non-thermal distribution is even bimodal with maxima appearing atE _kin = 0.16 ± 0.02 and 0.33 ± 0.02 eV. These values of the kinetic energies actually remain constant under variation of all experimental parameters. They appear to reflect the electronic and geometric properties of different binding sites from which the atoms are detached and thus constitute fingerprints of the metal surface. The non-thermal desorption mechanism is discussed in the framework of the Menzel-Gomer-Redhead scenario. The transition from non-thermal to thermal desorption at large fluentes of the laser light could also be identified.     

Raman scattering investigation and symmetry analysis of ferroelectric/ferroelastic Sb5O7I polytype 2MA

The polytype 2MA (-Sb₅O₇I) has the simplest acentric structure of the antimony oxideiodide family. It undergoes an antiferrodistortive phase transition at 438K and is both ferroelectric and ferroelastic below that temperature. The complete polarized Raman spectra in the ferroic phase have been measured and compared with those of the ferroelastic, centric polytype 2MC (-Sb₅O₇I). Several lines could be attributed to Sb—0 and Sb—I vibrations. A factor group analysis has been performed and compatibility relations have been established connecting phonon species in the low and high temperature phase. As a function of temperature the spectra revealed a strongly temperature dependent central line and several phonon lines whose intensities vanish aboveT _c . Using these phonon line intensities the temperature variation of the order parameter could be determined. The experimental results indicate that the phase transition is of first order.     

Spin-polarized photoemission study on the temperature dependence of the exchange splitting of Ni

Using spin-polarized photoemission with high energy- and angle resolution (E=100 meV, =±3°) we have investigated the temperature dependence of the exchange splitting of Ni in the temperature range 0.5T/T _c0.94. At room temperature we find _ex=0.18 eV for the exchange splitting of theS ₄ band at theX point of the Brillouin zone. With increasing temperature the total (spin-averaged) energy distribution shows a narrowing and merges into one peak. The spin-resolved energy distribution curves approach each other and are strongly broadened. A discussion of the data within current theories of itinerant electron magnetism is given. The spectra indicate that neither the pure Stoner model nor the prediction of local band theory, assuming a temperature independent exchange splitting are justified for Ni. We conclude that the exchange splitting decreases with increasing temperature and that transverse as well as longitudinal spin fluctuations are responsible for the broadening of the spin-resoived energy distribution curves.Experimental part of the work performed at Institut für Festkörperforschung of the KFA Jülich and supported by the Deutsche Forschungsgemeinschaft through SFB 125     

Opto-thermal study of the melting transition of benzophenone

We report a series of opto-thermal transient emission radiometry (OTTER) measurements on benzophenone over the temperature range 20–80°C, which includes the melting transition at 48°C. At temperatures sufficiently close, but below the melting point, the form of the opto-thermal decay curves was found to change, when the laser pulse energy was sufficient to cause transient melting near the surface. Such measurements could be useful in the study of re-crystallation dynamics in pulsed laser annealing and similar surface treatments. In addition, the experiment gives a direct measure of ₀, the initial jump in surface temperature, and a comparison of solid and liquid thermal diffusivities. The values found in the present study are ₀, andD(solid)/D(liquid)=2.2±0.2.