Simulating the oxygen K-edge spectrum from grain boundaries in ceramic oxides using the multiple scattering methodology

In this paper we demonstrate the use of the multiple scattering methodology to interpret oxygen K-edge spectra from both the bulk and grain boundaries in a variety of ceramic oxides. The experimental electron energy loss spectra (EELS) used in this study, were obtained from a dedicated scanning transmission electron microscope (STEM). Using the STEM to obtain the spectra has the advantage that each spectrum can be acquired with atomic spatial resolution. While the energy resolution is limited to approximately 0.8 eV, and the angular integration in the microscope apertures precludes momentum resolved spectroscopy, this unprecedented spatial resolution allows the electronic structure at individual defect sites to be determined. Additionally, as the microscope can also provide an atomic resolution image of the defect, the relationship between the atomic structure of the defect and its local electronic structure can be determined. In practice, this is achieved by using the structure observed in the image to build the real space atomic cluster for multiple scattering simulations. Detailed interpretation of the simulations of oxygen K-edge spectra from bulk MgO, CaO, SrTiO3, TiO2, MnO2, Mn3O4, Mn2O3 and MnO are presented. In addition, the simulations from grain boundaries in TiO2 (undoped) and SrTiO3 (undoped and Mn doped) are discussed in relation to quantifying the changes in the local electronic structure that are a direct consequence of the defect structure. The simulations are used to make interpretations of the structure-property relationships at these grain boundaries.     

Experimental and theoretical determination of the low-loss electron energy loss spectroscopy of nanostructured ZnO

The dielectric properties of nanostructured wurtzite-type ZnO are studied by analyzing the low-loss region of the electron energy loss spectroscopy (EELS) in a transmission electron microscope. Characteristic peaks at about 12 and 32 eV in the imaginary part of the dielectric function shift to lower energies as particle size decreases. A comparison of experimental EELS spectra and ab initio density-functional theory calculations (WIEN2k code) within the generalized gradient approximation (GGA), GGA+U and modified Becke-Johnson (mBJ) is presented. The origins of interband transitions are identified in the electronic band structure by calculating the partial imaginary part of the dielectric function and the partial density of states of Zn and O.     

Monochromated, spatially resolved electron energy-loss spectroscopic measurements of gold nanoparticles in the plasmon range

Gold nanoparticles show optical properties different from bulk material due to resonance phenomena which depend on local structure and geometry. Electron energy-loss spectrometry (EELS) in scanning transmission electron microscopy (STEM) allows the spatially resolved measurement of these properties at a resolution of few nanometers. In this work, the first monochromated measurements of gold nanoparticles (spheres, rods and triangles) are presented. Due to the improved energy resolution of about 0.2 eV, surface plasmon excitations at energies below 1 eV could be accurately measured from raw experimental data.     

Atomic resolution STEM analysis of defects and interfaces in ceramic materials

Atomic resolution scanning transmission electron microscopy (STEM) analysis, in particular the combination of Z-contrast imaging and electron energy-loss spectroscopy (EELS) has been successfully used to measure the atomic and electronic structure of materials with sub-nanometer spatial resolution. Furthermore, the combination of this incoherent imaging technique with EELS allows us to correlate certain structural features, such as defects or interfaces directly with the measured changes in the local electronic fine-structure. In this review, we will discuss the experimental procedures for achieving high-resolution Z-contrast imaging and EELS. We will describe the alignment and experimental setup for high-resolution STEM analysis and also describe some of our recent results where the combined use of atomic-resolution Z-contrast imaging and column-by-column EELS has helped solve important materials science problems.     

Growth,optical, mechanical,dielectric and theoretical properties of picolinium maleate NLO single crystal

Nonlinear optical single crystals of picolinium maleate (PM) were grown by slow evaporation method. The grown crystal was subjected to single crystal X-ray diffraction analysis to confirm that the crystal belongs to the monoclinic crystal structure with space group P2₁/c. The optical transmission range of the grown crystal was measured by UV–Vis–NIR region with the lower cut-off wavelength as 330 nm. The optical bandgap is found to be 3.75 eV. Mechanical strength of the grown crystal was analyzed using Vickers microhardness tester. Dielectric constant and dielectric loss of picolinium maleate are measured in the frequency range from 50 Hz to 5 MHz at different temperatures. Further, electronic properties, such as valence electron plasma energy, Penn gap, Fermi energy and electronic polarizability of the grown crystal have been estimated.     

Atomic-resolution electron energy loss spectroscopy imaging in aberration corrected scanning transmission electron microscopy

The "delocalization" of inelastic scattering is an important issue for the ultimate spatial resolution of innershell spectroscopy in the electron microscope. It is demonstrated in a nonlocal model for electron energy loss spectroscopy (EELS) that delocalization of scanning transmission electron microscopy (STEM) images for single, isolated atoms is primarily determined by the width of the probe, even for light atoms. We present experimental data and theoretical simulations for Ti L-shell EELS in a [100] SrTiO3 crystal showing that, in this case, delocalization is not significantly increased by dynamical propagation. Issues relating to the use of aberration correctors in the STEM geometry are discussed.     

Practical spatial resolution of electron energy loss spectroscopy in aberration corrected scanning transmission electron microscopy

The resolution of electron energy loss spectroscopy (EELS) is limited by delocalization of inelastic electron scattering rather than probe size in an aberration corrected scanning transmission electron microscope (STEM). In this study, we present an experimental quantification of EELS spatial resolution using chemically modulated 2×(LaMnO(3))/2×(SrTiO(3)) and 2×(SrVO(3))/2×(SrTiO(3)) superlattices by measuring the full width at half maxima (FWHM) of integrated Ti M(2,3), Ti L(2,3), V L(2,3), Mn L(2,3), La N(4,5), La N(2,3) La M(4,5) and Sr L(3) edges over the superlattices. The EELS signals recorded using large collection angles are peaked at atomic columns. The FWHM of the EELS profile, obtained by curve-fitting, reveals a systematic trend with the energy loss for the Ti, V, and Mn edges. However, the experimental FWHM of the Sr and La edges deviates significantly from the observed experimental tendency.     

Experimental and theoretical determination of the low-loss electron energy loss spectroscopy of LiMn2O4

The dielectric properties of cubic spinel-type LiMn₂O₄, used as cathode material in lithium ion secondary batteries, are studied by analyzing the low-loss region of the electron energy loss spectroscopy (EELS) spectrum in a transmission electron microscope. A comparison of experimental EELS spectra and ab initio density-functional theory calculations (WIEN2k code) within the generalized gradient approximation (GGA) is presented. The origins of interband transitions are identified in the electronic band structure, by calculating the partial imaginary part of the dielectric function and the partial density of states of Li, Mn and O. Good agreement with experimental spectra is observed which allowed interpreting main features of the EELS spectrum.     

Electron energy-loss spectroscopy of V2O5 nanofibers synthesized by electro-spinning

The dielectric properties of V₂O₅ nanofibers, synthesized by the electrospinning method, are studied by analyzing the low-loss region of the electron energy loss spectroscopy (EELS) in a transmission electron microscope. A comparison of experimental EELS spectra and ab initio density-functional theory calculations (WIEN2k code) within the Generalized Gradient Approximation (GGA) is presented, having found an excellent agreement between them. Although the experimental EELS has been acquired for the nanoparticles composing the fibers, and numerical calculations were carried out for bulk material, agreement between experimental and calculated results shows that no difference exists between the electronic structure in calculated bulk material and the nanoparticles. Furthermore, our results from EELS confirm that we accomplished the expected crystalline phase. The origins of interband transitions are identified in the electronic band structure by calculating the partial imaginary part of the dielectric function and the partial density of states.     

Inelastic electron scattering observation using energy filtered transmission electron microscopy for silicon -- germanium nanostructures imaging

This paper presents a new technique using energy filtered TEM (EFTEM) for inelastic electron scattering contrast imaging of Germanium distribution in Si-SiGe nanostructures. Comparing electron energy loss spectra (EELS) obtained in both SiGe and Si single crystals, we found a spectrum area strongly sensitive to the presence of Ge in the range [50-100 eV]. In this energy loss window, EELS spectrum shows a smooth steeply shaped background strongly depending on Ge concentration. Germanium mapping inside SiGe can thus be performed through imaging of the EELS background slope variation, obtained by processing the ratio of two energy filtered TEM images, respectively, acquired at 90 and 60 eV. This technique gives contrasted images strongly similar to those obtained using STEM Z-contrast, but presenting some advantages: elastic interaction (diffraction) is eliminated, and contrast is insensitive to polycrystalline grains orientation or specimen thickness. Moreover, since the extracted signal is a spectral signature (inelastic energy loss) we demonstrate that it can be used for observation and quantification of Ge concentration depth profile of SiGe buried layers.     

Optical properties and electronic transitions of SnO2 thin films by reflection electron energy loss spectroscopy

Optical properties of SnO₂ thin films in the 4–60 eV energy range are determined by reflection electron energy loss spectroscopy. Bulk and surface electron loss functions, real and imaginary parts of the dielectric function, refraction index, extinction and absorption coefficients are obtained from the analysis of the electron energy loss spectra. Electronic transitions are identified through the interpretation of the optical data. The samples (250–500 nm thick) were produced by ion beam-induced chemical vapor deposition. It is found that the compacity of the SnO₂ thin films affects their optical properties and therefore the relative intensity of the observed electronic transitions. The advantages of this method to determine optical properties of thin films are discussed. Inelastic mean free paths (6.2, 17 and 41 Å for electrons traveling in SnO₂ with kinetic energies of 300, 800 and 2000 eV, respectively) are obtained from the corresponding inelastic electron scattering cross-sections.     

La掺杂3C-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及稀土材料La掺杂3C-SiC的电子结构和光学性质进行理论计算.计算结果表明,La掺杂引起3C-SiC晶格体积增大,掺杂体系能量更小,掺杂体系的结构更稳定;未掺杂3C-SiC是直接带隙半导体,其禁带宽度为1.406 eV,La掺杂后带隙宽度下降为1.161 eV,La掺杂3C-SiC引入了3条杂质能级,能量较高的1条杂质能级与费米能级发生交叠,另外2条杂质能级都在费米能级以下价带顶之上,La掺杂引起3C-SiC吸收谱往低能区移动,未掺杂3C-SiC的静态介电常数为2.66,La掺杂引起静态介电常数增加为406.01,La掺杂3C-SiC是负介电半导体材料.     

Electron energy loss spectroscopy of TiC,ZrC and HfC

The dielectric properties of commercial TiC, ZrC and HfC powders were determined by analyzing the low loss region of the EELS spectrum in a transmission electron microscope. From these data, the optical joint density of states (OJDS) were obtained by Kramers–Kronig analysis. As maxima observed in the OJDS spectra are assigned to interband transitions across the energy gap, these spectra can be interpreted on the basis of existing energy-band calculations. Comparison between experimental results and theory shows good agreement.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

Design of a novel correlative reflection electron microscope for in-situ real-time chemical analysis

A novel instrument that integrates reflection high energy electron diffraction (RHEED), electron energy loss spectroscopy (EELS), and imaging is designed and simulated. Since it can correlate the structural, elemental, and spatial information of the same surface region via the simultaneously acquired patterns of RHEED, EELS, and energy-filtered electron microscopy, it is named correlative reflection electron microscopy (c-REM). Our simulation demonstrates that the spatial resolution of this c-REM is lower than 50 nm, which meets the requirements for in-situ monitoring the structural and chemical evolution of surface in advanced material.     

Measuring the dielectric constant of materials from valence EELS

Valence EELS combined with STEM provides an approach to determine the dielectric constant of materials in the optical range of frequencies. The paper describes the experimental procedure and discusses the critical aspects of valence electron energy-loss spectroscopy (VEELS) treatment. In particular, the relativistic losses might affect strongly the results, and therefore they have to be subtracted from the spectra prior the analysis. The normalization of the energy-loss function is performed assuming an uniform thickness of the investigated area, which is reasonably fulfilled for carefully prepared FIB samples. This procedure requires the presence of at least one reference material with known dielectric properties to determine the absolute thickness. Examples of measuring the dielectric constant for several materials and structures are presented.     

Theoretical investigation of the elastic,electronic, thermodynamic and optical properties of the zinc-blende structure AlN under high pressure

The elastic, electronic, thermodynamic and optical properties of the zinc-blende structure aluminum nitride (AlN) under high pressure have been investigated using first-principles calculations. The dependencies of the elastic constants, the bulk modulus, the shear modulus and energy gaps on the applied pressure are presented, and the results are in good agreement with comparable experimental and theoretical values. Also, the energy band structure and density of states under high pressure have been analysed. Furthermore, the optical constants, including the dielectric function, optical reflectivity, refractive index and electron energy loss, are discussed for radiation up to 50 eV.     

Ab-initio calculations of bandgap tuning of In1-xGaxY (Y = N,P) alloys for optoelectronic applications

The Ⅲ-V alloys and doping to tune the bandgap for solar cells and other optoelectronic devices has remained a hot topic of research for the last few decades. In the present article, the bandgap tuning and its influence on optical properties of In_1-xGa_xN/P, where (x = 0.0, 0.25, 0.50, 0.75, and 1.0) alloys are comprehensively analyzed by density functional theory based on full-potential linearized augmented plane wave method (FP-LAPW) and modified Becke and Johnson potentials (TB-mBJ). The direct bandgaps turn from 0.7 eV to 3.44 eV, and 1.41 eV to 2.32 eV for In_1-xGa_xN/P alloys, which increases their potentials for optoelectronic devices. The optical properties are discussed such as dielectric constants, refraction, absorption, optical conductivity, and reflection. The light is polarized in the low energy region with minimum reflection. The absorption and optical conduction are maxima in the visible region, and they are shifted into the ultraviolet region by Ga doping. Moreover, static dielectric constant ε₁(0) is in line with the bandgap from Penn's model.     

Ce掺杂CrSi2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂CrSi2的电子结构和光学性质进行理论计算。计算结果表明,未掺杂CrSi2是间接带隙半导体,其禁带宽度为0.392 eV,掺杂Ce元素,仍然是间接半导体,带隙宽度下降为0.031eV。未掺杂CrSi2在费米能级附近主要由Cr-5d、Si-3p态贡献。Ce掺杂后在费米能级附近主要由Cr-5d轨道,Ce-4f轨道,C-2p,Si-3p轨道贡献,掺杂后电导率提高。未掺杂CrSi2有两个介电峰,掺杂后,只有一个介电峰。未掺杂CrSi2,在能量为6.008处吸收系数达到最大值,掺杂后在能量为5.009eV处,吸收系数达到最大值。