Observation of Microwave-Induced Magnetoresistance Oscillations in a ZnO/Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>O Heterojunction

Microwave-induced magnetoresistance and magnetoconductance oscillations in the two-dimensional electron system have been detected in a ZnO/Mg _x Zn_1–x O heterojunction. The structure has a high electron density of n = 6.5 × 10¹¹ cm^–2 and a very low mobility of 10⁵ cm² V^–1 s^–1. This clearly indicates that the mobility of two-dimensional electrons is not a critical parameter for the observation of microwave-induced oscillations. The samples were both Hall bars and Corbino disks. At least four oscillations have been resolved. Their amplitude increases with the magnetic field and all oscillations with numbers >1 have the same phase of 0.25. It has been shown that the microwave-induced photoelectromotive force is also a periodically oscillating function of the inverse magnetic field.     

Excitation of even levels of erbium atoms without a change in the number of 4<Emphasis Type="Italic">f</Emphasis> electrons

The excitation of even levels of erbium atoms by slow electrons that occurs without a change in the number of electrons in the 4f shell is experimentally studied. The levels investigated belong to the 4f ¹²6s7s, 4f ¹²5d6s, 4f ¹²6s6d configurations. The cross sections measured at an electron energy of 30 eV lie within the range (0.2–18) × 10^?18 cm².     

The special features of the Hall effect in GaMnSb layers deposited from a laser plasma

Epitaxial GaMnSb films with Mn contents up to about 10 at. % were obtained by deposition from a laser plasma in vacuum. The growth temperature T _s during deposition was varied from 440 to 200°C, which changed the concentration of holes from 3 × 10¹⁹ to 5 × 10²⁰ cm^?3, respectively. Structure studies showed that, apart from Mn ions substituting Ga, the GaMnSb layers contained ferromagnetic clusters with Mn and shallow acceptor defects of the Ga_Sb type controlled by the T _s value. Unlike single-phase GaMnSb systems studied earlier with negative anomalous Hall effect values and Curie temperatures not exceeding 30 K, the films obtained in this work exhibited a positive anomalous Hall effect, whose hysteresis character manifested itself up to room temperature and was the more substantial the higher the concentration of holes. The unusual behavior of this effect was interpreted in terms of the interaction of charge carriers with ferromagnetic clusters, which was to a substantial extent determined by the presence of Schottky barriers at the boundary between the clusters and the semiconducting matrix; this interaction increased as the concentration of holes grew. The absence of this effect in semiconducting compounds based on III–V Group elements with MnSb or MnAs ferromagnetic clusters was discussed in the literature; we showed that this absence was most likely related to the low hole concentrations in these objects.     

Reconstruction of the 2D hole gas spectrum for selectively doped <Emphasis Type="Italic">p</Emphasis>-Ge/Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>ix</Subscript> heterostructures

The magnetic field (0≤B≤32 T) and temperature (0.1≤T≤15 K) dependences of longitudinal and Hall resistivities have been investigated for p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 12≤d _w ≤20 nm and hole densities p _s =(1–5)×10¹⁵ m^?2. An extremely high sensitivity of the experimental data (the structure of magnetoresistance traces, relative values of the inter-Landau-level gaps deduced from the activation magnetotransport, etc.) to the quantum well profile is revealed in the cases where the Fermi level reaches the second confinement subband. An unusually high density of localized states between the Landau levels is deduced from the data. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used to evaluate the impurity potential fluctuation characteristics: the random potential amplitude, the nonlinear screening length in the vicinity of integer filling factors v=1 and v=2, and the background density of states (DOS). The described models are suitable for explanation of the observed DOS values, while the short-range impurity potential models fail. For half-integer filling factors, a linear temperature dependence of the effective quantum Hall effect plateau-plateau (PP) transition widths v₀(T) is observed, contrary to the expected scaling behavior of the systems with short-range disorder. The finite T→0 width of the PP transitions may be due to an effective low-temperature screening of a smooth random potential due to the Coulomb repulsion of electrons.     

Plasma-volume generation of H<Superscript>−</Superscript> ions in a low-voltage xenon-hydrogen discharge. II

A low-voltage xenon-hydrogen discharge is considered theoretically at an interelectrode distance of L = 1 cm and cathode emission current densities of j _s = 2–20 A/cm². Basic parameters of the discharge plasma, in particular, the total hydrogen and xenon densities, are optimized to attain the maximum possible density of negative hydrogen ions \(N_{H^ - } (L)\) at the plasma-anode boundary. The distributions of the plasma parameters over the discharge gap are calculated for optimized regimes. According to calculations, at intermediate cathode emission current densities (j _s ≈ 5–10 A/cm²) in optimized discharge regimes, the density of negative hydrogen ions in the anode region of the plasma is \(N_{H^ - } (L)\) ≈ (1.5–2.5) × 10¹² cm^?3 and the total plasma pressure is p ₀ = 0.5–0.6 Torr.     

Localization of conduction electrons in the ferromagnetic clusters AuFe

The optical-conductivity spectra of concentrated solutions Au_{1 ? x} Fe _x with x = 17 and 22 at % have been measured in a frequency range of (10–33) × 10³ cm^?1 at room temperature. The results are analyzed together with previous optical data obtained for compounds with x = 4–12 at %. It is found that the magnetic contributions σ_magn = σ_AuFe ? σ_Au to dc and low-frequency(10 cm^?1) conductivities for an Fe concentration below 4 at % are almost equal, while the low-frequency magnetic contribution for larger concentrations is significantly larger than the dc one. An absorption band at frequencies of 1000–3000 cm^?1 has been found for samples with concentrations x = 6–22 at %. The observed phenomena are attributed to the localization of electrons inside clusters containing ferromagnetically ordered iron ions.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

Galvanomagnetic study of the quantum-well valence band of germanium in the Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript>/Ge/Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript> potential well

The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d _w and the hole concentration p _s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p _s = 5 × 10¹⁵ m^?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.     

Lithium diffusion in Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>-based electrodes: a joint analysis of electrochemical impedance,cyclic voltammetry,pulse chronoamperometry,and chronopotentiometry data

In order to establish the mechanism and to determine the parameters of lithium transport in electrodes based on lithium-vanadium phosphate (Li₃V₂(PO₄)₃), the kinetic model was designed and experimentally tested for joint analysis of electrochemical impedance (EIS), cyclic voltammetry (CV), pulse chronoamperometry (PITT), and chronopotentiometry (GITT) data. It comprises the stages of sequential lithium-ion transfer in the surface layer and the bulk of electrode material’s particles, including accumulation of lithium in the bulk. Transfer processes at both sites are of diffusion nature and differ significantly, both by temporal (characteristic time, τ) and kinetic (diffusion coefficient, D) constants. PITT data analysis provided the following D values for the predominantly lithiated and delithiated forms of the intercalation material: 10^?9 and 3 × 10^?10 cm² s^?1, respectively, for transfer in the bulk and 10^?12 cm² s^?1 for transfer in the thin surface layer of material’s particles. D values extracted from GITT data are in consistency with those obtained from PITT: 3.5–5.8 × 10^?10 and 0.9–5 × 10^?10 cm² s^?1 (for the current and currentless mode, respectively). The D values obtained from EIS data were 5.5 × 10^?10 cm² s^?1 for lithiated (at a potential of 3.5 V) and 2.3 × 10^?9 cm² s^?1 for delithiated (at a potential 4.1 V) forms. CV evaluation gave close results: 3 × 10^?11 cm² s^?1 for anodic and 3.4 × 10^?11 cm² s^?1 for cathodic processes, respectively. The use of complex experimental measurement procedure for combined application of the EIS, PITT, and GITT methods allowed to obtain thermodynamic E,c dependence of Li₃V₂(PO₄)₃ electrode, which is not affected by polarization and heterogeneity of lithium concentration in the intercalate.     

Thermo- and photostimulated luminescence in LiF : Mg,Ti single crystals irradiated by ions and VUV light

A coordinated study of the relaxation of optical absorption induced by vacuum ultraviolet radiation, x-rays, and α-particles, as well as of photo- and thermostimulated luminescence (TSL) of LiF : Mg, Ti crystals (TLD-100) in the 295–750-K interval, has revealed that TSL regions characterized by activation energies E _a = 2.2–2.4 eV and anomalously high frequency factors p ₀ = 10²¹–10²² s^?1 alternate with regions where E _a = 1.5 eV and p ₀ = 10¹²–10¹⁴ s^?1. The relative intensities of the TSL peaks produced by UV illumination (10–17 eV) differ strongly under the conditions of selective photon-induced generation of anion excitons, free electrons and holes, or near-impurity electronic excitations. The latter are responsible for the high efficiency of tunneling radiative (involving titanium centers) or nonradiative (involving hydroxyl ions) recombination. The analysis of TSL peaks of LiF: Mg, Ti and LiF took into account two-step processes, namely, thermal dissociation of three-fluorine F ₃ ^? molecules and recombination of the products of their decay (V _K and V _F centers, H interstices).     

Single-electron charge transfer and excitations at collisions between Bi<Superscript>4+</Superscript> ions in the kiloelectronvolt energy range

Pioneering theoretical data for single-electron charge transfer and excitations due to collisions between Bi⁴⁺ ions in the ground (6s) and metastable (6p) states are gained in the collision energy interval 5–75 keV in the center-of-mass frame. The cross sections of the processes are calculated in terms of the close-coupling method in the basis of two-electron quasi-molecular states for the Coulomb trajectory of nuclei. It is found that single-electron capture into the singlet 6s ² states of Bi³⁺ ions makes a major contribution to the charge transfer total cross section for Bi⁴⁺(6s) + Bi⁴⁺(6s) collisions (reaction 1), whereas single-electron capture into the singlet 6s6p states is the basic contributor to the total cross section in Bi⁴⁺(6s) + Bi⁴⁺(6p) collisions (reaction 2). In the collision energy interval mentioned above, the collision cross sections vary between 1.2 × 10^?17 and 1.9 × 10^?17 cm² for reaction 1 and between 3.8 × 10^?17 and 5.3 × 10^?17 cm² for reaction 2. In reaction 1, the 6s → 6p excitation cross sections vary from 0.6 × 10^?16 to 0.8 × 10^?16 cm² for the singlet channel and from 2.2 × 10^?16 to 2.8 × 10^?16 cm² for the triplet channel. The calculation results are compared with the data obtained in experiments with crossed ion beams of kiloelectronvolt energy. The fraction of metastable ions in the beams is estimated by comparing the experimental data with the weighted average theoretical results for the cross sections of reactions 1 and 2. From the data for the charge transfer cross sections, one can estimate particle losses in relativistic beams due to a change in the charge state of the ions colliding with each other in the beam because of betatron oscillations.     

Variation of potential energy surface height and bound state depth induced by laser phase along the reaction path in atom-molecule reactions: Application to Li + CH<Subscript>4</Subscript> → LiH + CH<Subscript>3</Subscript>

Laser atom-molecule reaction interaction through polarizability and dipole moment contribution leads to potential energy surface barrier reshaping and bound states along the reaction path. The polarizability is maximum in the transition state. We will show here by using gauge representation (electric field gauge) for wave length λ = 20.6 μm, intensity I = 1 × 10¹² W/cm², I = 5 × 10¹² W/cm², I = 1 × 10¹³ W/cm², I = 3 × 10¹³ W/cm², that we can create laser induced potential energy surface barrier reshaping in the transition state region (–1–0.5 a. u.). We illustrate such effects for the LiH + CH₃ ? Li + CH₄ reaction with a barrier using ab-initio methods for calculating the reaction path, polarizability and dipole moment contribution of the atom-molecule reaction.     

Effect of residual atmospheric pressure on the development of electrostatic discharges at the surface of protective glasses of solar cells

Electrostatic discharges obtained upon the irradiation of K-208 glass with 40-keV electrons at a flux density φ of 10¹⁰ to 2 × 10¹¹ cm^–2 s^–1 are studied. The residual pressure p _v in the vacuum chamber is varied from 5 × 10^–5 to 5 × 10^–3 Pa. Structural changes in the sample surfaces are studied by atomic-force microscopy. Depending on the pressure level, two types of discharges are observed in experiments at 3 × 10¹⁰ ≤ φ ≤ 1.2 × 10¹¹ cm^–2 s^–1: a microprojection at the glass–ionized-residual-atmosphere surface and a discharge which develops along the irradiated surface. It is found that at 5 × 10^–5 ≤ p _v ≤ 3 × 10^–4 Pa and 8 × 10¹⁰ ≤ φ ≤ 10¹¹ cm^–2 s^–1, discharges of the first type appear at the beginning of exposure; that is, an increase in microprojections is observed. Further, surface discharges propagate through these microprojections. At 10^–3 ≤ p _v ≤ 5 × 10^–3 Pa and 10¹⁰ ≤ φ ≤ 5 × 10¹⁰ cm^–2 s^–1, on the contrary, discharges of the second type are realized at the beginning. These discharges result in the appearance of channels with inhomogeneities on the glass, at which subsequently discharges of the first type occur. It is determined by calculations that in the region adjacent to the exposed glass surface, secondary electrons accelerated in a field of charge accumulated in the glass make the main contribution to the ionization of gases.     

Reactions of initiation of the autoignition of H<Subscript>2</Subscript>–O<Subscript>2</Subscript> mixtures in shock waves

The initiation of the autoignition of hydrogen–oxygen–argon mixtures behind reflected shock waves is studied by absorption and emission spectrophotometry in the temperature range of 960 < T < 1670 K at pressures of ~0.1 MPa. Introduction of Mo(CO)₆ additive in an amount of ~80 ppm made it possible to study the effect of O atoms on the shortening of the ignition delay time of H₂–O₂–Ar mixtures. A kinetic modeling of our own and published experimental data at temperatures of 930 < T < 2500 K and pressures of 0.05 < P < 8.7 MPa enabled to establish how the initiation reactions influence the process of self-ignition and to evaluate the rate constant for one of the initiation reactions: k(H₂ + O₂ → 2OH) = (3 ± 1) × 10¹¹exp(–E _a/RT), cm³ mol^–1 s^–1, where E _a = (40 ± 2) kcal/mol.     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.     

Astrophysical <Emphasis Type="Italic">S</Emphasis>-factor of T(<Superscript>4</Superscript>He, γ)<Superscript>7</Superscript>Li reaction at <Emphasis Type="Italic">E</Emphasis><Subscript>cm</Subscript> = 15.7 keV

The astrophysical S-factor of the reaction T(⁴He, γ)⁷Li is measured for the first time at the center of mass energy E _cm = 15.7 keV, lower than the energy range of the Standard Big Bang Nucleosynthesis (SBBN) model. The experiment is performed on a Hall pulsed accelerator (TPU, Tomsk). An acceleration pulse length of 10 μs allows one to suppress the background of cosmic radiation and the ambient medium by five orders of magnitude. A beam intensity of ~ 5 × 10^{14 4}He⁺ ions per pulse allows one to measure an extremely low reaction yield. The yield of γ-quanta with the energies E _γ ⁰ = 2483.7 keV and E _γ ¹ = 2006.1 keV is registered by NaI(Tl) detectors with the efficiency ε = 0.331 ± 0.026. A method for direct measurement of the background from the chain of reactions T(⁴He, ⁴He)T→T(T, 2n)X→(n, γ) and/or (n, n′γ) which ends by neutron activation of materials surrounding the target is proposed and implemented in this study. The value of the astrophysical S-factor of the reaction T(⁴He, γ)⁷Li S _αt (E _cm = 15.7 keV) = 0.091 ± 0.032 keV b provides the choice from the set of experimental data for the astrophysical S _αt -factor in favor of experimental data [4] with S _αt (E _cm = 0) = 0.1067 ± 0.0064 keV b.     

Ion dynamics in methylcellulose–LiBOB solid polymer electrolytes

A polymer electrolyte system comprising methylcellulose (MC) as the host polymer and lithium bis(oxalato) borate (LiBOB) as the lithium ion source has been prepared via the solution cast technique. The electrolyte with the highest conductivity of 2.79 μS cm^?1 has a composition of 75 wt% MC–25 wt% LiBOB. The mobile ion concentration (n) in this sample was estimated to be 5.70?×?10²⁰ cm^?3. A good correlation between ionic conductivity, dielectric constant, and free ion concentration has been observed. The ratio of mobile ion number density (n) at a particular temperature to the concentration n ₀ of free ions at T?=?∞ (n/n ₀) and the power law exponents (s) exhibit opposite trends when varied with salt concentration.     

Absorption spectra of some radiation-doped A<Subscript>3</Subscript>B<Subscript>5</Subscript> compounds

Temperature dependences of the absorption coefficient in A₃B₅ crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 10¹⁷ electron/cm² are studied. A low-lying E_v + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga_1–xIn_xAs, InP, and InP〈Fe〉).     

A study of the neutrino production of <Emphasis Type="Italic">φ</Emphasis> and <Emphasis Type="Italic">D</Emphasis><Stack><Subscript><Emphasis Type="Italic">s</Emphasis></Subscript><Superscript>+</Superscript></Stack> mesons

The charged current neutrino production of φ and D _s ⁺ mesons is studied, using the data obtained with the SKAT bubble chamber exposed to the Serpukhov accelerator neutrino beam. It is found that the φ production occurs predominantly in the forward hemisphere of the hadronic c.m.s. (at x _F > 0, x _F being the Feynman variable), with the mean yield strongly exceeding the expected yield of directly produced φ mesons and varying from 〈n _φ(x _F s 0)〉 = (0.92 ± 0.34) × 10^?2 at W > 2 GeV up to (1.23 ± 0.53) × 10^?2 at W > 2.6 GeV and (1.44 ± 0.69) × 10^?2 at W > 2.9 GeV, W being the invariant mass of the hadronic system. For the first time, the inclusive yield of leading D _s ⁺ mesons carrying more than z = 0.85 of the current c-quark energy is estimated: 〈n _{D s} ⁺ (z > 0.85, W > 2.9 GeV)〉 = (6.64 ± 1.91) × 10^?2. It is shown that the shape of measured φ meson differential spectrum on xF is reproduced by that expected from the D _s ⁺ → φX decays. An indication was obtained that this expected spectrum underestimates the measured φ yield.     

Investigation of Rare Pion Decays with the PIBETA Spectrometer

Experimental results on pion decays obtained with the PIBETA spectrometer at the Paul Scherrer Institute (PSI) are reviewed. For pion beta decay π⁺ → π⁰е⁺ν (πβ), a precision measurement of relative probability yields Г(πβ) = [1.036 ± 0.004(stat) ± 0.004(syst) ± 0.003(π⁺→е⁺ν)] × 10^–8, which implies V_ud = 0.9728(30) for the corresponding element of the Cabibbo–Kobayashi–Maskawa mixing matrix. Using a sample of 65 × 10³ events, relative probability of the π⁺→е⁺νγ radiative pion decay (RPD) in the kinematic region of E_γ > 10 MeV and θ_eγ > 40° is measured as B^exp = 73.86(54) × 10^–8. A statistical analysis of measured E_e+ and E_γ distributions for this decay yield the values F_V = 0.0258(17) and F_A = 0.0117(17) for the pion weak formfactors. Assuming that F_V linearly depends on the е⁺ν invariant mass q² as F_V(q²) = F_V(0)(1 + aq²), the slope parameter is extracted as а = 0.10(6). The pion polarizability and neutral-pion lifetime are estimated as α_E = 2.78(10) × 10^–4 fm³ and τ(π⁰) = (8.5 ± 1.1) × 10^–17 s, respectively. The data for decays π⁺→ е⁺ ν and \({\mu ^ + } \to {e^ + }v\bar v\gamma \) have been collected and are being processed. The follow-up PEN experiment aims at reducing the uncertainty on the π⁺ → е⁺ ν relative probability by almost an order of magnitude (to 5 × 10^–4).