Two interacting electrons in a Gaussian confining potential quantum dot

Two interacting electrons in a Gaussian confining potential quantum dot are considered under the influence of a perpendicular homogeneous magnetic field. The energy levels of the low-lying states are calculated as a function of magnetic field. Calculations are made by using the method of few-body physics within the effective-mass approximation. A ground state behavior (singlet→triplet state transitions) as a function of the strength of a magnetic field has been found in the weak confinement case as a two-electron quantum dot with parabolic confining potential.     

Spin quantum computation in silicon nanostructures

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals because of their long spin coherence times due to their limited interactions with their environments. For these spin qubits, shallow donor exchange gates are frequently invoked to perform two-qubit operations. We discuss in this review a particularly important spin decoherence channel, and bandstructure effects on the exchange gate control. Specifically, we review our work on donor electron spin spectral diffusion due to background nuclear spin flip-flops, and how isotopic purification of silicon can significantly enhance the electron spin dephasing time. We then review our calculation of donor electron exchange coupling in the presence of degenerate silicon conduction band valleys. We show that valley interference leads to orders of magnitude variations in electron exchange coupling when donor configurations are changed on an atomic scale. These studies illustrate the substantial potential that donor electron/nuclear spins in silicon have as candidates for qubits and simultaneously the considerable challenges they pose. In particular, our work on spin decoherence through spectral diffusion points to the possible importance of isotopic purification in the fabrication of scalable solid state quantum computer architectures. We also provide a critical comparison between the two main proposed spin-based solid state quantum computer architectures, namely, shallow donor bound states in Si and localized quantum dot states in GaAs.     

Valley polarization in Si(100) at zero magnetic field

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.     

Electronic Structure of Helium Atom in a Quantum Dot

Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method.To be specific,precise energy eigenvalues of bound 1sns(~1S~e)(n=1-6)states and the resonance parameters i.e.positions and widths of~lS~e states due to 2sns(n=2-5)and 2pnp(n=2-5)configurations of confined helium below N=2 ionization threshold of He~+have been estimated.The two-parameter(Depth and Width)finite oscillator potential is used to represent the confining potential due to the quantum dot.It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size.It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters.A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here.     

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.     

磁场对四端量子波导中电子输运性质的影响

采用模匹配方法，研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明，从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下，两个垂直输出端的输运概率是相同的，但垂直端与水平端的输运概率不同；在外加磁场下，由于磁边缘态效应，两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场，我们能获得丰富的电子输运结构，如台阶，宽谷，尖峰等；通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率. 关键词： 电子输运 介观体系 磁效应     

Magnetic field and symmetry effects in small quantum dots

Shell phenomena in small quantum dots with a few electrons under a perpendicular magnetic field are discussed within a simple model. It is shown that various kinds of shell structures, which occur at specific values for the magnetic field lead to a disappearance of the orbital magnetization for particular magic numbers for noninteracting electrons in small quantum dots. Including the Coulomb interaction between two electrons, we found that the magnetic field gives rise to dynamical symmetries of a three-dimensional axially symmetric two-electron quantum dot with a parabolic confinement. These symmetries manifest themselves as near-degeneracy in the quantum spectrum at specific values of the magnetic field and are robust at any strength of the electron-electron interaction. A remarkable agreement between experimental data and calculations exhibits the important role of the thickness for the two-electron quantum dot for analysis of ground state transitions in a perpendicular magnetic field. The text was submitted by the author in English.     

硅纳米结构晶体管中与杂质量子点相关的量子输运

在小于10 nm的沟道空间中,杂质数目和杂质波动范围变得十分有限,这对器件性能有很大的影响.局域纳米空间中的电离杂质还能够展现出量子点特性,为电荷输运提供两个分立的杂质能级.利用杂质原子作为量子输运构件的硅纳米结构晶体管有望成为未来量子计算电路的基本组成器件.本文结合安德森定域化理论和Hubbard带模型对单个、分立和耦合杂质原子系统中的量子输运特性进行了综述,系统介绍了提升杂质原子晶体管工作温度的方法.     

A Two-Electron Quantum Ring Under Magnetic Fields

We calculate the energy levels of low-lying states of a two-electron quantum ring under the influence of perpendicular homogeneous magnetic field. Calculations are made by using the method of exact diagonalization within the effective-mass approximation. The ground-state electronic structures and angular momentum transitions as a function of the strength of a magnetic field have been revealed.     

Two-electron states in a double quantum dot in a constant electric field

The wave functions of stationary states and the spectrum of two-electron system are analytically determined in a symmetric double quantum dot. It is shown that in the ground state when the external electric field is absent, electrons cannot reside in the same quantum dot due to the Coulomb blockade. This situation changes in an external electric field. At a critical field strength, the probability of finding both electrons in the same quantum dot jumpwise increases from zero to unity.     

门电压控制的硅烯量子线中电子输运性质

硅烯是由单层硅原子形成的二维蜂窝状晶格结构,具有石墨烯类似的电学性质,由于硅烯中存在比较强的自旋轨道耦合而备受关注.本文利用非平衡格林函数方法研究了门电压控制的硅烯量子线中电子输运性质和能带结构.研究发现,只有在较强的门电压下,而且硅烯量子线具有较好的锯齿形或扶手椅形边界而不存在额外硅原子时,硅烯量子线中才存在无能隙的自旋极化边缘态.另外,计算结果表明这种门电压控制的硅烯量子线中边缘态在每个能谷处自旋是极化的.这些计算结果将为实验上利用电场制作硅烯纳米结构提供理论支持.     

Triple quantum dots as charge rectifiers

We theoretically analyze electronic spin transport through a triple quantum dot in series, attached to electrical contacts, where the drain contact is coupled to the central dot. We show that current rectification is observed in the device due to current blockade. The current blocking mechanism is originated by a destructive interference of the electronic wavefunction at the drain dot. There, the electrons are coherently trapped in a singlet two-electron dark state, which is a coherent superposition of the electronic wavefunction in the source dot and in the dot isolated from the contacts. Its formation gives rise to zero current and current rectification as the voltage is swept. We analyze this behavior analytically and numerically for both zero and finite magnetic dc fields. On top of that, we include phenomenologically a finite spin relaxation rate and calculate the current numerically. Our results show that triple dots in series can be designed to behave as quantum charge rectifiers.     

Quantum toys for quantum computing: persistent currents controlled by the spin Josephson effect

Quantum devices and computers will need operational units in different architectural configurations for their functioning. The unit should be a simple "quantum toy," an easy to handle superposition state. Here such a novel unit of quantum mechanical flux state (or persistent current) in a conducting ring with three ferromagnetic quantum dots is presented. The state is labeled by the two directions of the persistent current, which is driven by the spin chirality of the dots, and is controlled by the spin (the spin Josephson effect). It is demonstrated that by the use of two connected rings, one can carry out unitary transformations on the input flux state by controlling one spin in one of the rings, enabling us to prepare superposition states. The flux is shown to be a quantum operation gate, and may be useful in quantum computing.     

Entanglement as an indicator of a geometrical crossover in a two-electron quantum dot in a magnetic field

We found that a downwardly concave entanglement evolution of the ground state of a two-electron axially symmetric quantum dot testifies that a shape transition from a lateral to a vertical localization of two electrons under a perpendicular magnetic field takes place. Although affected, the two-electron probability density does not exhibit any prominent change.     

Effects of magnetic field on photon-induced quantum transport in a single dot-cavity system

In this study,we show how a static magnetic field can control photon-induced electron transport through a quantum dot system coupled to a photon cavity.The quantum dot system is connected to two electron reservoirs and exposed to an external perpendicular static magnetic field.The propagation of electrons through the system is thus influenced by the static magnetic and the dynamic photon fields.It is observed that the photon cavity forms photon replica states controlling electron transport in the system.If the photon field has more energy than the cyclotron energy,then the photon field is dominant in the electron transport.Consequently,the electron transport is enhanced due to activation of photon replica states.By contrast,the electron transport is suppressed in the system when the photon energy is smaller than the cyclotron energy.     

Spin-entangled currents created by a triple quantum dot

We propose a simple setup of three coupled quantum dots in the Coulomb blockade regime as a source for spatially separated currents of spin-entangled electrons. The entanglement originates from the singlet ground state of a quantum dot with an even number of electrons. To preserve the entanglement of the electron pair during its extraction to the drain leads, the electrons are transported through secondary dots. This prevents one-electron transport by energy mismatch, while joint transport is resonantly enhanced by conservation of the total two-electron energy.     

磁场下非对称T型量子波导的电子输运行为

运用模匹配方法和求解单电子薛定谔方程,来演示非对称T型磁量子结构的电子输运性质.结果表明,结构因子和磁势垒都能改变电子散射模数,电子输运谱因此变得复杂而丰富,散射区域出现了完全局域态和磁边缘态.在特定的结构参数和磁场强度下,能观测到宽谷、尖峰、共振透射和共振反射等电子输运现象,即可以通过调节磁场大小和结构参数来实现波矢过滤. 关键词： 介观体系 电子输运 磁效应     

Valley polarization enhancement and oscillation in asymmetric T junctions

We studied the valley dependent transport in a T junction consisting of an armchair lead and two zigzag leads. Electrons transmitted from the armchair lead to the two outgoing zigzag leads can be valley polarized. When the two outgoing leads have different widths, electrons are pushed into the wider lead and as a result, the valley polarization of the current in the narrow lead is enhanced with an oscillatory dependence on energy. The oscillation pattern is determined by the widths of the two zigzag leads. We analyzed the total local density of states of the device region of the junction and cannot find features that attribute this enhancement to quasi-bound state formation.     

Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot

The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter.     

Effects of electric and magnetic fields on electronic states and transport of a Hall bar

We study the edge-state band and transport property for a HgTe/CdTe quantum well Hall bar under the combined coupling of a transverse electric field and a perpendicular magnetic field. It is demonstrated that a weak magnetic field can protect one of the two edge states, open or enlarge a gap of the other edge state in the Hall bar. However, an appropriate electric field can remove the gap, restoring the quantum spin Hall effect. Using the scattering matrix method, we study the electronic transport of the system. We find that the electric field can not only make the switch from pure spin-up to spin-down current, but also open or close the edge-state channels in a narrow Hall bar under a weak magnetic field, which provides us with a new way to construct a topological insulator-based spin switch and charge switch.