Colored noise in activated rate processes

We consider bistable systems driven by stationary wideband Gaussian colored noise. We construct uniform asymptotic expansions of the stationary probability density function and of the activation rate, for small intensity and short correlation time of the noise. We find that for different values of the total power output / of the noise, different terms in the asymptotic expansions become dominant. For we recover previously derived results, while for =O() and new results are obtained.     

A frequency response model in multiquantum well lasers with unequilibrium carrier transport

A carrier transport model to explain the high-frequency response in high-speed MQW lasers is described. The ambipolar approximation, which is unsuitable for dealing with the high-speed carrier dynamics in MQW structures, was not adopted for small-signal analysis. The carrier transport effect can be characterized by four time constants: the electron transport time, _bmn; the hole transport time, _bmp; the electron escape time, _wbn; and the hole escape time, _wbp. The frequency response was interpreted as the sum of the constant response term due to the fast electron current and the roll-off term due to the slow hole transport time. The ratio of the electron contribution to the total response was proportional to the ratio of electron contribution to the total differential gain, , and reciprocally proportional to _n0 = 1 + _bmn/_wbn. The value of was calculated to be about 0.5 for typical MQW lasers. The roll-off frequency is mainly determined by . The ratio _p0 = 1 + _bmp/_wbp affects the resonant frequency and the damping rate in the high-bias condition.     

A two-level Kaluza-Klein theory

Let the Lie groups G and H act on the manifold P in such a way that P fibres as a principal G-bundle over P/G and as an H-bundle over P/H. We find that every pair (,) where is an H-invariant connection form in PP/G and is a G-invariant connection form in PP/H corresponds uniquely to a connection form in PP/(H×G) and a cross-section of a vector bundle with base P/(H×G).     

Macroscopic short-time electrodynamics for conductors

In the macroscopic electrodynamics (MED) of good conductors (metals) based on Ohm's law j=E, the momentum relaxation time =m/ne² of the electrons limits the application to electromagnetic (EM) processes with characteristic timest. An interesting physical difficulty occurs in MED since the EM field damping time _R=/ of metals is very small compared with the minimum macroscopic time scale, _R. Consequently, the damping and propagation of EM waves and pulses in good conductors cannot be correctly described within the frame of conventional MED. New hyperbolic EM wave equations with relaxation and memory are proposed, which no longer exhibit the _R deficiency. The latter is caused by Ohm's law, which breaks down for short-time processes, due to neglect of electron inertia. The advantages of the proposed and the disadvantages of the conventional EM wave equations for good conductors are discussed in applications.     

Holes in the probability density of strongly colored noise driven systems

A qualitative change in the topology of the joint probability densityP(,x), which occurs for strongly colored noise in multistable systems, has recently been observed first by analog simulation (F. Moss and F. Marchesoni,Phys. Lett. A 131:322 (1988)) and confirmed by matrix continued fraction methods (Th. Leiber and H. Riskin, unpublished), and by analytic theory (P. Hänggi, P. Jung, and F. Marchesoni,J. Stat. Phys., this issue). Systems studied were of the classx=–U(x)/x+(t,), whereU(x) is a multistable potential and (t, ) is a colored, Gaussian noise of intensityD, for which =0, and (t) (s)=(D/)exp(–t–s/). When the noise correlation time is smaller than some critical value ₀, which depends onD, the two-dimensional densityP(,x) has the usual topology [P. Jung and H. Risken,Z. Phys. B 61:367 (1985); F. Moss and P. V. E. McClintock,Z. Phys. B 61:381 (1985)]: a pair of local maxima ofP(,x), which correspond to a pair of adjacent local minima ofU(x), are connected by a single saddle point which lies on thex axis. When >₀, however,the single saddle disappears and is replaced by a pair of off-axis saddles. A depression, or hole, which is bounded by the saddles and the local maxima thus appears. The most probable trajectory connecting the two potential wells therefore does not pass through the origin for >₀, but instead must detour around the local barrier. This observation implies that successful mean-first-passage-time theories of strongly colored noise driven systems must necessarily be two dimensional (Hänggiet al.). We have observed these holes for several potentialsU(x): (1)a soft, bistable potential by analog simulation (Moss and Marchesoni); (2) a periodic potential [Th. Leiber, F. Marchesoni, and H. Risken,Phys. Rev. Lett. 59:1381 (1987)] by matrix continued fractions; (3) the usual hard, bistable potential,U(x)=–ax ²/2+bx ⁴/4, by analog simulations only; and (4) a random potential for which the forcingf(x)=–U(x)/x is an approximate Gaussian with nonzero correlation length, i.e., colored spatiotemporal noise, by analog simulation. There is a critical curve ₀(D) in the versusD plane which divides the two topological behaviors. For a fixed value ofD, this curve is shifted toward larger values of ₀ for progressively weaker barriers between the wells. Therefore, strong barriers favor the observation of this topological transformation at smaller values of . Recently, an analytic expression for the critical curve, valid asymptotically in the small-D limit, has been obtained (Hänggiet al.).This paper will appear in a forthcoming issue of theJournal of Statistical Physics.     

A matrix method for estimating the Liapunov exponent of one-dimensional systems

Let : [0, 1][0, 1] be a piecewise monotonie expanding map. Then admits an absolutely continuous invariant measure. A result of Kosyakin and Sandler shows that can be approximated by a sequence of absolutely continuous measures _n invariant under piecewise linear Markov maps _itn. Each _itn is constructed on the inverse images of the turning points of . The easily computable measures _n are used to estimate the Liapunov exponent of . The idea of using Markov maps for estimating the Liapunov exponent is applied to both expanding and nonexpanding maps.     

Langevin dynamic simulation of hysteresis in a field-swept Landau potential

Numerical simulations are done of Langevin dynamics for a uniform-orderparameter, field-swept Landau model,= –|a/2|m ²+|b/4|m ⁴–mh(t) , to study hysteresis effects. The field is swept at a constant rateh(t)=h(0)+ht. The stochastic jump values of the field {h_J from an initially prepared metastable minimumm(0) are recorded, on passage to a global minimum m(). The results are: (a) The mean jump¯h _J(h) increases (hysteresis loop widens) with h, confirming a previous theoretical criterion based on rate competition between field-sweep and inverse mean first-passage time (FPT); (b) The broad jump distribution(h _J,h) is related to intrinsically large FPT fluctuations ( ²–²)/ ² O(1), and can be quantitatively understood. Possible experimental tests of the ideas are indicated.     

Nonlinear relaxation at first-order phase transitions: A Ginzburg-Landau theory including fluctuations

Kinetics of phase transitions are investigated in systems with nonconserved one-component order parameter (i.e., generalized time-dependent Ginzburg-Landau models ind dimensions). The correct static critical behavior as well as fluctuation effects on the kinetics are incorporated by a suitable adaptation of the theory on spinodal decomposition by Langer, Baron and Miller. Both the case of quenches from temperaturesT above to below the critical pointT _c and the case of magnetic field changesH from positive to negative values are treated, and both time-dependent order parameter m() and structure factorS(q, ) are obtained numerically ford=2, 3. In the case of quenches atH=0, we find that m()0 andS(q, ) —S(q, ) exp(– ^1/2/7.2) , withS(q, )q ^–2. In the case of field changes we find that forH not exceeding some critical valueH ^* the system is trapped in a metastable state with infinite lifetime. In contrast to the meanfield-spinodal, the susceptibility does not seem to diverge atH ^*. These results are compared with other treatments, in particular the Monte Carlo simulations of kinetic Ising models by Binder and Müller-Krumbhaar. While our theory describes some properties of the metastable states reasonably,H ^* distinctly exceeds the observed limit of metastability. We argue that the present theory does not take into account nucleation fluctuations, and also fails to describe correctly the domain growth in the late stages of the relaxation. Contrary to Langer et al. we suggest that universality holds for nonlinear relaxation and spinodal decomposition nearT _c .Supported in part by the Deutsche Forschungsgemeinschaft, Sonderforschungsbereich 130     

Spannungsverläufe Nach Wechseln der Verformungsgeschwindigkeit an Metalleinkristallen

The theoretical relations between _v and measured stress changes are discussed and compared with experimental results. For instantaneous change in the strain rate, the first deviation of the stress increase from the linearity ( _C ) can be used as a measure of _v for small deformation only. The comparison of _C with the extrapolated value _A enables to reveal the presence of recovery. The comparison of stress changes measured after a given rate change at the same strain on unrecovering (low temperatures) and recovering (higher temperatures) samples enables to differentiate between various types of recovery.     

Laser damage in silicon photodiodes

Thermal damage of silicon photodiodes exposed to intense optical radiation is investigated. Damage thresholds of Si photodiodes irradiated by 1.06m laser pulses are reported for values of irradiation time,, ranging from 10^–8 to 1s. Threshold laser irradiation produces visible microscopic damage and a permanent degradation in photoresponse. The loss of responsivity is associated with degradation of the detector diode characteristics due to laser-induced heating. The time and wavelength dependence agree with the predictions of a thermal model which treats a semi-infinite material irradiated by a Gaussian laser beam. The energy density thresholds are independent of for short irradiation times and asymptotically approach a limiting behaviour which increases as for long times. They are given by the empirical relationE ₀=65[1+217/tan^–1(258)^1/2] J cm^–2 for 1.06m radiation. The thresholds at short irradiation times of detectors damaged by 1.06m radiation are about 25 times larger than those of detectors exposed to 0.6943m radiation. The greater susceptibility at 0.6943m is attributed to a larger optical absorption coefficient.     

Transport of light radiation in a spatially finite three-dimensional scattering medium

We propose a new method for solving radiation transport problems, which permits including in analytic form for the case of normal incidence the effect of spatial finiteness of the scattering medium. The formation of the light field accompanying changes in the optical parameters and optical dimensions of the medium is analyzed.this paper, we examine the simplest case of a geometry of a scattering medium in the form of a parallelipiped with optical length _x, height _y, and width _z. The analysis is performed for the case =1, _y = _z with the latter varying in the range 0.1 to . The results obtained show that the light field depends strongly on the optical dimensions of the medium. The limiting values of the optical dimensions (_y = _z), beginning with which the spatial finiteness of the medium can be neglected, are determined.Translated from Izvestiya Vysshikh Uchebnykh Zavednii, Fizika, No. 8, pp. 82–85, August, 1982.     

An Equilibrium Lattice Model of Wetting on Rough Substrates

We consider a semi-infinite 3-dimensional Ising system with a rough wall to describe the effect of the roughness r of the substrate on wetting. We show that the difference of wall free energies (r)= _AW(r)– _BW(r) of the two phases behaves like (r)r(1), where r=1 characterizes a purely flat surface, confirming at low enough temperature and small roughness the validity of Wenzel's law, cos (r)r cos (1), which relates the contact angle of a sessile droplet to the roughness of the substrate     

From the eden model to the kinetic growth walk: A generalized growth model with a finite lifetime of growth sites

We propose a new class of cluster growth models where growth sites have a finite lifetime , which contains as special cases the Eden model ( = ) and the kinetic growth walk ( = 1). For finite but large values the growth process can be characterized by a crossover timet _X; for times belowt _X an Eden-type cluster is formed, while for times abovet _X the growth process belongs to the universality class of the self-avoiding random walk. The crossover time increases monotonically with . We develop a scaling theory for the time evolution of the mean end-to-end distance between the seed and the last-added site, and for the average number of growth sites by which the kinetics of the growth process can be characterized. We test this scaling theory by extensive Monte Carlo simulations. We also extend our results to inhomogeneous media (percolation systems).     

Slowing down of retrieval in the hopfield model

The variation of the convergence time, as a function of the storage capacity is studied numerically for systems ranging in size fromN=1000 toN=16,000 neurons. is found to increase likeexp[–A(_c–)] as one nears the critical storage capacity _c =0.142=0.002.     

Energy relaxation in aϕ 4 with long range interactions

We investigate the influence of long range interactions on the relaxation behaviour of a lattice model with an on-site potential of ⁴-type and infinite range harmonic interactions. For finite number of particlesN, it is shown that the autocorrelation functions <E _n(t)E _n > of the fluctuations of the one-particle energiesE _n(t) decays exponentially. The corresponding relaxation time is proportional toN and is given by (T, N) =N₀(T). The temperature dependent time scale ₀ can explicitly be related to the dynamics of a one-particle correlator of the noninteracting system. The results are derived using Mori-Zwanzig projection formalism. The corresponding memory kernel is calculated within a mode coupling approximation and by a perturbative approach. Both results agree in leading order in 1/N. It is speculated that any interaction of range generates a timescale .     

Kinetic equation in the kinetic region of the dilute and nonuniform electron plasma

Mori's scaling method is used to derive the kinetic equation for a dilute, nonuniform electron plasma in the kinetic region where the space-time cutoff (b, t _c) satisfies _Dbl _f , _D t _{c f} , with _D the Debye length, _D ^–1= _p the plasma frequency, andl _f and _f the mean free path and time, respectively. The kinetic equation takes account of the nonuniformity of the order ofl _f and _D for the single-and the two-particle distribution function, respectively. Thus the Vlasov term associated with the two-particle distribution function is retained. This kinetic equation is deduced from the kinetic equation in the coherent region obtained by Morita, Mori, and Tokuyama, where the space-time cutoff of the coherent region satisfies _Dbr ₀, _Dt _{c 0}, withr ₀ the Landau length and ₀ the corresponding time scale.     

Electron (muon) decay of a heavy lepton

Expressions are derived for the differential probability for the decay e(). The possibly nonzero mass of and the polarizations of both the decaying lepton and the charged lepton which is produced are all taken into account. A quantitative analysis is carried out for various masses of the neutrino and for various energies of the lepton emitted during the decay.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 97–100, June 1981.     

Dispersion of the permittivity of high-resistance semiconductors

We consider the mechanism of macroscopic polarization of semiconducting plates owing to the interaction of free carriers with an impurity level, in which role the level of the residual impurity of compensated semiconductors may appear. This mechanism, in combination with the diffusion-drift mechanism of polarization, results in additional dispersion of the real () and imaginary () parts of the dielectric permittivity, this being particularly significant for semiconductors of thickness smaller than the screening length L_s of free carriers. The character of the behavior of and depends on the relation between the Maxwell relation time _M and the times of carrier capture: _c and ejection _e by an impurity center. For _cetm and (/L_s) _e/_c1 the dispersion of and is the same as for thick plates (/L_s1). For _{c m e} and (/L_s)_e/_c1 the () curve has a characteristic kink in the region 1/_e, indicating additional absorption associated with the ejection of carriers into the surface region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 11–13, October, 1981.     

Magnetoresistance in two-dimensional magnesium films of various thicknesses

The magnetoresistance of thin magnesium films in the weakly localized regime has been measured at 4.2 K as a function of film thickness. The results are analysed in a new and simple way based on the theory of Hikami et al. [1]. We use only two adjustable parameters, the inelastic relaxation time _i and the spin-orbit scattering time _so. Whereas _so is found to be almost independent of thickness, _i changes significantly. The variation of _i with thickness is discussed in the light of the theories for the enhanced electron-electron interaction, but it does not seem to tie up with any of the existing theories.     

Effect of electron irradiation on the parameters of gallium arsenide pulsed diodes

It is shown that the current-voltage characteristics of diodes produced by various methods vary in approximately the same manner. The behavior of the capacitance C(U) during irradiation can be explained on the basis of the theories developed for planar p-n junctions and Schottky barriers. The recovery time of diodes always increases during irradiation with large doses ( 10¹⁶ electrons/cm²). At smaller doses for diodes of the Schottkybarrier type (weakly formed), _recov always increases with irradiation, perhaps due to a decrease in the concentration n; for strongly formed diodes (having parameters approximating those of diffused diodes), the _recov behavior is governed by the nature of the impurity distribution and by the ratio of the lifetime of the minority carriers to the diode time constant ¯R¯C. With > RC, a decrease in _recov may be observed as a result of a decrease in .Translated from Izvestia VUZ. Fizika, No. 4, pp. 109–113, April, 1970.