Steps and facets on annealed LaAlO3{100} and {110} surfaces

Lanthanum-aluminate (LaAlO₃) is one of the optimum substrates for epitaxic growth of thin oxide films. In this paper, the structures of the {100} and {110} surfaces of annealed LaAlO₃ are studied using reflection electron microscopy (REM). 010 steps have been observed on {100}, these are the lowest energy steps. The {100} surface is atomically flat, but the {110} surfaces exhibit high-density fine structures distributed on large surface terraces. These fine structures correspond to the formation of small width (100) and (010) facets on the (110) surface. A growth model is given to interpret the formation of large steps and large terraces on the {110} surfaces.     

High TcYBa2Cu3O7−δ superconducting transition-edge microbolometers

High T_c superconducting thin film YBa₂Cu₃O_7−δ (YBCO) bolometers have been fabricated on various substrates such as MgO, LaAlO₃, YSZ and Si using laser ablation technique. Performance of these IR bolometers operating with a Joule-Thomson refrigerator has been investigated. Measurements of the responsivity and low frequency noise near T_c in the current biased YBCO bolometers show that reliable devices can be fabricated. Measured noise equivalent power (NEP), for YBCO/YSZ bolometer, reaches 6 × 10⁻¹⁰W/Hz^1/2 at 165 Hz and has a responsivity of 60 V/W with a blackbody source. This performance is comparable to that of the optimized pyroelectric detectors. The characteristics of YBCO films deposited on Si substrates reveal that superconducting thin film multi-elements or focal plane array with silicon integrated readout circuit are feasible. Such bolometers exhibit NEP of 7 × 10⁻⁹W/Hz^1/2, and significant improvement appears possible. Electrical measurements show no noticeable film degradation after the bolometer is exposed to atmosphere for three months.     

Fabrication of p-Si/β-FeSi2 balls/n-si structures by MBE and their electrical and optical properties

We report on the formation technique of single-crystalline β-FeSi₂ balls (<100 nm) embedded in a Si p–n junction region by Si molecular beam epitaxy (MBE). β-FeSi₂ films grown on Si (0 0 1) by reactive deposition epitaxy (RDE) aggregated into islands after annealing at 850°C in ultrahigh vacuum. The islands of β-FeSi₂ aggregated further into a ball shape by following the Si MBE overgrowth at 750°C. It was found from X-ray diffraction (XRD) patterns that the epitaxial relationship between the two materials, and single-crystalline nature were preserved even after the annealing and the Si overgrowth. Capacitance–voltage (C–V) characteristics and transmission electron microscope (TEM) images revealed that a lot of defects were introduced around the embedded β-FeSi₂ balls with an increase of embedded β-FeSi₂ quantity.     

Low field microwave absorption of YBa2Cu3O7−δ thin films

The modulated microwave absorption in YBa₂Cu₃O_7−δ thin films was studied as a function of temperature, modulation amplitude, and microwave power. The comparative nature of weak links in YBaCuO thin films, ceramics, and powders is discussed.     

Phase separation in YBa2Cu3O7−δ single crystals near δ = 0

X-ray diffraction, resistivity, AC and DC magnetization data on high-quality single crystals of YBa₂Cu₃O_7−δ are presented. We demonstrate that for δ<0.08, the (0 0 l) diffraction lines are split into two, indicating that at these high oxygen concentrations the crystals are no longer single phase but actually consist of two (or more) different phases with slightly different c-axis parameters. In the two-phase region, the electrical resistivity and the AC and DC magnetic susceptibilities show a broadening of the superconducting transition. This broadening is thought to be due to the proximity effect or strains in two finely dispersed phases with slightly different transition temperatures.     

Effect of different oxidizing gases on the in-situ growth of YBa2Cu3O7−δ films by pulsed laser deposition

The effectiveness of oxygen (O₂), nitrous oxide (N₂O), and nitrogen dioxide (NO₂) as oxidizing agents during in-situ growth of YBa₂Cu₃O_7−δ (YBCO) films on (100) SrTiO₃ substrates by pulsed laser deposition has been studied as a function of deposition temperature (700–800°C), and laser wavelength (193,248 and 355 nm), for a wide range of oxidizer gas pressure (0.1–200 mTorr). In general, the superconducting transition temperature of the films has been found to increase with increasing oxidant pressure, with zero-resistance temperature ≈90 K only obtained in films prepared in a relatively high pressure (150–200 mTorr) of oxidizer gas. At lower pressures, the transition temperature while being depressed is quite sensitive to the nature of the oxidant, the laser wavelength and the deposition temperature. Nevertheless, independent of the oxygen source or other growth parameters, an almost linear decrease in transition temperature with a corresponding increase in the c-axis lattice parameter has been observed for all the film. YBCO films have also been deposited in a low pressure background (≤ 1 mTorr) using a combination of atomic oxygen and pulsed molecular oxygen. The results are discussed in terms of the oxygen requirement for kinetic and thermodynamic stability of YBCO during growth of the film by pulsed laser deposition.     

Preparation and spectroscopic characterization of γ-Al2O3 thin films

The electronic structure and surface properties of γ-Al₂O₃ thin films are studied. We have prepared the films by oxydizing Al foils under controlled conditions and we characterize the γ-Al₂O₃ samples by means of XPS, UPS, and TEM and found no charging. Pronounced effects in temperature-dependent changes of the work function are observed which result from changes in band bending and electron affinities by reorganisation and migration of defects. Thereby the ability of these systems for prototype studies in catalysis and analysis of defects is demonstrated.     

τ→μγ and μ→eγ as probes of neutrino mass models

We discuss the possibility of discriminating between different supersymmetric see-saw models by improving the experimental sensitivity to charged lepton flavour violating processes. Assuming a hierarchical neutrino mass spectrum, we classify see-saw models according to how the hierarchy Δm²Δm²_atm is generated, and study the predictions of each class for the branching ratios of τ→μγ and μ→eγ. The process τ→μγ is found to be a particularly promising tool to probe the fundamental see-saw parameters, and especially to identify the origin of the large atmospheric mixing angle. Predictions for μ→eγ are more model-dependent. We point out that, even with an improvement of the experimental sensitivities by three orders of magnitude, both τ→μγ and μ→eγ could escape detection in models where Δm²_atm is determined by one of the lightest right-handed neutrinos.     

Growth of β-MnO2 films on TiO2(110) by oxygen plasma assisted molecular beam epitaxy

We have used oxygen plasma assisted MBE to grow epitaxial films of pyrolusite (β-MnO₂) on TiO₂(110) for thicknesses of one to six bilayers (BL). We define a bilayer to be a layer of Mn and lattice O and an adjacent layer of bridging O within the rutile structure. The resulting surfaces have been characterized in situ by reflection high-energy electron diffraction, low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and atomic force microscopy. Well-ordered, pseudomorphic overlayers form for substrate temperatures between 400 and 500°C. Mn–Ti intermixing occurs over the time scale of film growth (1 BL/min) for substrate temperatures in excess of 500°C. Films grown at 400–500°C exhibit island growth, whereas intermixed films grown at temperatures of 500–600°C are more laminar. 1 BL films grown at 450°C are more laminar than multilayer films grown at the same temperature, and form a well-ordered surface cation layer of Mn on the rutile structure with at most 10% indiffusion to the second cation layer.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Properties of Si δ-layers embedded in GaAs

An ultrathin, a few monolayers (MLs) thick Si δ-layer, has been embedded in GaAs. The Si δ-layer properties have been electrically and structurally characterized. A conductivity transition has been observed, when going from free carrier transport in thin (1 ML) ordered δ-layers to the disordered conditions for Si δ-layers thicker than 4 MLs. Two novel emission bands are observed in photoluminescence (PL) for Si δ-layers in the width range 1–4 MLs, but solely at below bandgap excitation. The pronounced 2D properties of these δ-layers have been clearly demonstrated by an observed blue shift of the PL characterization as the thickness of the Si δ-layer is reduced. The so-derived results on the transition energies and the electronic structure are in good agreement with theoretical predictions obtained by a self-consistent approach.     

A measurement of the η radiative width Γη→γγ

The radiative width of the η meson has been measured at PETRA in photon-photon collisions. The resulting value is Γ_η→γγ = 0.53±0.04±0.04 keV.     

Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

Si δ-doped GaAs layers were studied by micro-Raman spectroscopy. The spectra were recorded along the bevelled structure using the light of Ar⁺-ion laser (514.5 nm line) with high power density. The observed changes in the Raman spectra are discussed in the sense of coupling present between LO phonon and photoexcited electron–hole plasma and plasma of electrons arising from ionised Si atoms. Plasmon-LO-Phonon modes of the coupling of photoexcited plasma in δ-doped GaAs layers were observed for the first time. The minimal thickness of cap layer was estimated in the range of 10–19 nm depending on the doping concentration.     

Upper limit on the decay Σ(1385)→Σγ and cross section for γΣ→Λπ

Coherent Λπ⁻ production on Pb of 600 GeV Σ⁻ hyperons has been studied with the SELEX facility at Fermilab. Using the Primakoff formalism, we set a 90% CL upper limit on the radiative decay width Γ[Σ(1385)⁻→Σ⁻γ]<9.5 keV, and estimate the cross section for γΣ⁻→Λπ⁻ at  GeV to be 56±16 μb.     

Study of ultrathin Fe films on Pd{111)}, Ag{111} and A1{111}

The growth of epitaxial Fe films of 1 to 10 layer equivalents (LE) on Pd{111}, Al{111} and Ag{111} has been studied with quantitative low-energy electron diffraction and Auger electron spectroscopy. On Pd{111}, both at room temperature and at 200° C, the growth starts with pseudomorphic layers which may involve intermixing of Fe and Pd. At both temperatures, when the coverage reaches 6 LE, the Fe films develop into large bcc {110} domains related to the substrate by the Kurdjumov-Sachs orientation. On Ag{111} Fe grows initially in a very similar manner to Fe on Ag{001}, i.e., by way of small islands of bcc Fe. These islands then grow into bcc Fe{110} domains in the Nishiyama-Wassennan orientation. On Al{111} Fe behaves differently, despite the fact that the lattice mismatch for Fe on A1{111} is nearly identical to that for Fe on Ag{111}: for coverages of less than 1 LE the surface region becomes completely disordered and no LEED pattern is visible.     

Realization and properties of ramp-type YBa2Cu3O7−δ/Au/Nb junctions

All-thin-film ramp type Josephson junctions between YBa₂Cu₃O_7−δ and Nb have been fabricated. This procedure allows connections between high-T_c and low-T_c superconductors at different crystal sides of the high-T_c superconductor on one chip, which is of great interest for novel phase devices. A thin Au layer is incorporated as a chemical barrier to avoid oxygen transfer from the YBa₂Cu₃O_7−δ to the Nb. Critical current densities up to 600 A/cm² are obtained at T=4.2 K, with typical R_nA values of 0.8 μΩ cm². The variation of the magnetic field dependence of the critical current with the angle between the junction barrier and the YBa₂Cu₃O_7−δ crystal axes is explained by considering a predominant d_x²−y² order parameter symmetry of the YBa₂Cu₃O_7−δ. The successful fabrication of these junctions allows the implementation of novel superconducting electronics, such as complementary Josephson circuitry or proposed qubit concepts, using the unconventional order parameter symmetry of the high-T_c superconductor.     

Superconductivity and crystallographic properties of La2 − xMxCuO4 − δ (M = Na, K)

Superconductivity and crystallographic properties of La_{2 − x}M_xCuO_{4 − δ} (M = Na, K) are studied. In the La_{2 − x}M_xCuO_{4 − δ} system, superconductivity is detected for x 0.2. Oxygen content analysis shows that the system has more oxygen vacancies than the La_{2 − x}Sr_xCuO_{4 − δ} system. These oxygen vacancies may reduce the hole concentration, and high Na-doping is needed to produce superconductivity. In the La_{2 − x}K_xCuO_{4 − δ} system, superconductivity is observed for the first time. Resistivity and magnetic susceptibility measurements show that T_c(onset) is 40 K and the Meissner volume fraction is about 4% for x = 0.7. The system changes from orthorhombic to a tetragonal K₂NiF₄ structure at x ≈ 0.3 and only tetragonal samples show superconductivity.     

Crystal structure determination of Pb2Sr2YCu3O8+δ (δ=0, 1.67) by powder neutron diffraction

Crystal structures of Pb₂Sr₂YCu₃O_8+δ(δ=0.0 and 1.67) were determined by powder neutron diffraction. For δ=0, it had been indicated by powder X-ray diffraction that the structure was a monoclinic one. The R factors of the present analysis for the monoclinic structure were about 3/4 of those for the previous orthorhombic ones. The structure was almost the same as the previous X-ray result except z(O(2)). For the annealed phase, the tetragonal and the orthorhombic structures had been presented by X-ray diffraction and by neutron diffraction, respectively. The R factors of the present analysis for the orthorhombic structure were about 5/6 of those for the tetragonal structure. The distance between the Pb plane and the oxygen-deficient Cu plane was found to become larger in proportion to δ, though there occurs a phase separation in the low-δ region.     

Characterization of nonstoichiometric nickel manganite spinels NixMn3−x□3δ/4O4+δ by temperature programmed reduction

Cation deficient spinels Ni_xMn_3−x□_3δ/4O_4+δ (0≤x≤1) have been prepared by thermal decomposition of mixed oxalates Ni_x/3Mn_(3−x)/3(C₂O₄)·nH₂O in air at 623 K. They have been characterised by temperature programmed reduction (TPR) under H₂, the reaction being followed by gravimetric and powder X-ray diffraction measurements. It has been shown that TPR proceeds in several steps. The first steps correspond to the loss of nonstoichiometric oxygen leading to the formation of a stoichiometric oxide. During the following stages the manganese cations are reduced, causing the spinel structure to be destroyed, and the formation of solid solution of NiO in a cubic MnO. Subsequently, Ni²⁺ cations undergo a reduction to metallic nickel, and, finally, a mixture of nonstoichiometric MnO_1−δ and metallic nickel is formed. These oxides contain a high level of vacancies which vary with the nickel content with a maximum of δ≈1 near x=0.6. This nonstoichiometry is ascribed both to the presence of Ni³⁺ and excess of Mn⁴⁺.