Dependence of irradiation temperature in the response of iron salts

A potential dosimeter based on aqueous frozen solutions and solid-state salt are presented for the evaluation of the energy transferred during the interaction of high-energy radiation with matter at low temperature. The foundation of these dosimeters, both the solid state and the frozen solutions, is based on the measurement of the change of the iron oxidation state. The systems were irradiated with gamma radiation at different doses (up to 10 MGy), and at different temperatures (from 77 to 298 K). The irradiated samples were analysed by UV-spectroscopy and Mössbauer spectroscopy. A theoretical model was developed for the chemical reactions system. This model reproduces the experimental effects produced by the irradiation in aqueous solutions of ferrous salt. The results showed that the response of the dosimeters depends on the irradiation temperature. At low-radiation doses, the response was linear. In particular, this work can be applied to low-temperature dosimetry can be specially applied to simulation experiments of extraterrestrial bodies, as well as in general to space research.     

Effect of doping with cobalt on radioluminescence and low temperature thermoluminescence of Li2B4O7 crystals

X-ray excited emission spectra at various temperatures, as well as low temperature glow curves of Czochralski-grown Li₂B₄O₇:Co (LTB:Co) single crystals, have been recorded and compared with the data available for undoped LTB and LTB:Eu,Mn. Although the presence of cobalt does not influence the radioluminescence of the material, it clearly alters its thermoluminescence; specifically, the number of peaks in the glow curve of LTB:Co is reduced as against that of LTB and LTB:Eu,Mn. This observation and its possible interpretations shed new light on the issue of shallow traps in lithium tetraborate crystals.     

On the feasibility of production of microkelvin temperature by nuclear demagnetisation

Nuclear demagnetisation as a means of refrigeration has been proposed and achieved long ago. In this paper an attempt has been made to show that PrBe₁₃, a Van-Vleck paramagnet, can be used to produce a lattice temperature of 10μK. or lower. Such a calculation can be used for a computer simulation of the process.     

Dependence of critical pitting temperature on the concentration of sulphate ion in chloride-containing solutions

Effects of varying concentration of sulphate (SO₄²⁻) ion on the pitting behavior of 316SS have been investigated using potentiostatic critical pitting temperature (CPT) measurements, potentiostatic current transient technique and scanning electron microscopy in NaCl solution containing 0.5% Cl⁻ ions. The results demonstrated that when the concentration of SO₄²⁻ ion is less than 0.42%, the CPT is surprisingly lower than that without SO₄²⁻ ion, showing an accelerating effect of the SO₄²⁻ ion on pit initiation, which is different from the traditional concept. As the concentration of SO₄²⁻ ion increases beyond 0.42%, the CPT is higher than that without SO₄²⁻ ion, displaying an inhibiting effect of the SO₄²⁻ ion on pit initiation. Based on the above results, a qualitative model is proposed to explain the inhibiting and accelerating effect of SO₄²⁻ ion on the pit initiation using the mechanism of ions-competitive adsorption between SO₄²⁻ and Cl⁻ ions. The electric charges calculated in the process of pitting corrosion indicated that the pit morphology and its dimension are dependent on the content of SO₄²⁻ ion in chloride-containing solutions. The higher the concentration of SO₄²⁻ ion, the larger the dimension of the pit, reflecting an accelerating effect on pit growth.     

Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

We present a simple, low-cost and high-effective method for synthesizing high-quality, large-area graphene using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on SiO₂/Si substrate covered with Ni thin film at relatively low temperatures (650 °C). During deposition, the trace amount of carbon (CH₄ gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. After deposition, Ni is removed by wet etching, and the obtained single continuous graphene film can easily be transferred to other substrates. This investigation provides a large-area, low temperature and low-cost synthesis method for graphene as a practical electronic material.     

低温下不锈钢导热系数的测量

在低温条件下利用稳态纵向热流法测量了制造低温阀门常用的316L不锈钢和17-4PH不锈钢的导热系数,通过实验表明两者的导热系数与316不锈钢的导热系数十分接近。     

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained.     

Effect of laser irradiation on the electrical properties of dysprosium doped LiCo-Ferrite

The effect of laser irradiation on the electrical properties of Li_0.5+z Co _z Dy _x Fe_2.5?2z?x O₄ ferrite (0.0 ≤ x ≤ 0.2, z = 0.1) has been studied in the temperature range 300 K ≤ T ≤ 750 K at frequencies of 10 kHz?5 MHz, using a LIMO-IR laser diode, at a wavelength of 808 nm. It was found that laser irradiation increases the polarization, the resistivity and the paramagnetic region. As the result of electronic rearrangement and lattice defects, small polorons and clusters were created. The doping of LiCo-Ferrite by Dy³⁺ increases both the AC and DC resistance of the investigated material. The variation of the AC and DC resistance with the Dy-content (x) obeys the following correlations R _ac/100 = 50x ²+4x+0.005 and R _dc/1000 = 31x ²+0.099x+0.09, respectively. A peculiar behaviour was obtained for the sample with Dy-content x = 0.075, as the resistance notably decreases. The applicable result is that laser irradiation increases the resistance of LiCo-ferrite by about 17% while its doping by dysprosium at x = 0.15 increases the resistance by about 23%. Its value is nearly stable for the temperature range from 340 to 480 K.     

Two-step method preparation of graphene without hydrogen on methanol pretreatment copper substrate by PECVD at low temperature

Plasma enhanced chemical vapor deposition (PECVD) is one effective method to prepare graphene at low temperature in a short time. However, the low temperature in PECVD could not provide substrate a proper state for large area and few layer graphene preparation. Herein, we propose a two-step method to grow graphene on Cu foils. In the first step, in order to acquire a smooth and oxide-free surface state, methanol was used as a reductant to pretreat Cu. In the second step, graphene films were prepared on Cu foils by PECVD using CH₄ as carbon source with H₂-free. Few-layer graphene sheets with diameter about 1 μm under low temperature (700 °C) and at a short time (10 min) on well pretreated Cu foils were successfully gotten. The effect of methanol pretreatment on graphene synthesis and the graphene growth mechanism on Cu substrate by PECVD are analyzed comprehensively.     

InGaN基白光LED光谱特征和结温相关性研究

 以InGaN蓝光+荧光粉的白光LED为研究对象,在恒定环境温度下改变驱动电流,利用光谱仪测得不同LED结温下的光谱曲线。通过分析实验数据,得出光谱特征与该型LED结温的关系。结果表明：InGaN基白光LED蓝光和荧光的峰值波长与结温没有明显的线性关系;蓝光的光谱线宽以及荧光和蓝光峰值强度的比值与结温具有良好的线性关系。     

Dependence of the Curie temperature on the effective de Gennes factor in ferromagnets with exchange frustration

Considering the magneto-diluted gadolinium-containing Adamian alloys, it is shown that the dependence of the Curie temperature on the de Gennes factor ξ = c(g ? 1)2J(J + 1) can be expanded for ferromagnets with the exchange frustration. It is shown that in this case it is necessary to replace J by S _eff and that the linear dependence of T _C on ξ_eff remains up to the pure spin-glass state with S _eff = 0.     

New mechanism of irradiation creep based on the radiation-induced vacancy emission from dislocations

A new mechanism of irradiation creep is proposed, which is based on the radiation and stress induced difference in emission (RSIDE) of vacancies from dislocations of different orientations with respect to the external stress. This phenomenon is due to the difference in vacancy formation energies, which is proportional to the external stress. The proposed model exhibits similarities with thermal creep models and it is distinct from stress-induced preferential absorption (SIPA) models based on the difference in the long-range interaction of point defects with dislocations. The RSIDE creep rate is essentially temperature independent and is proportional to the dislocation density, stress and irradiation flux. It is inversely proportional to the square of the vacancy formation energy, which is lower than the Frenkel pair formation energy. Experimental verification of the proposed model is discussed on the basis of the measurements of vacancy concentration and creep rate under sub-threshold electron irradiation.     

ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature

ZnS films grown on GaAs and HgCdTe substrates by atomic layer deposition (ALD) under very low temperature were investigated in this work. ZnS films were grown under several temperatures lower than 140 °C. The properties of the films were investigated with high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed the ZnS films were polycrystalline. The growth rate monotonically decreased with temperature, as well as the root mean square (r.m.s) roughness measured by AFM. XPS measurement revealed the films were stoichiometric in Zn and S.     

Low temperature resonances in the electron heat capacity of finite systems

Temperature variations of the heat capacity (C) are studied in a low temperature regime T<δ_F∼ε_F/N for 2D and 3D systems with N∼10²-10⁴ treated as a canonical ensemble of N-noninteracting fermions. The analysis of C is performed by introducing the function φ(ε), the spectral distribution of C, that gives the contribution of each single-particle state to C. This function has two peaks divided by the energy interval . If at some temperature T_res a resonance takes place i.e. the positions of these peaks coincide with energies of two levels nearest to ε_F then C vs T can show a local maximum at T_res. This gives us the possibility to assess the single-particle level spacings near the Fermi level.     

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

Silicon nitride films have been deposited at a low temperature (70 °C) by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique and their physical and chemical properties were studied. For a deposited SiN sample, β-phase was observed and refractive index of 2.1 at 13.18 nm/min deposition rate was obtained. The attained stress of 0.08 GPa is lower as compared to the reported value of 1.1 GPa for SiN thin films. To study the deposited film, characterization was performed using X-ray photoelectron spectra (XPS), X-ray diffraction (XRD), micro Raman spectroscopy, Fourier transfer infrared spectroscopy (FTIR), cross-section scanning electron microscopy (SEM) and atomic force microscopy (AFM).     

Effect of gamma irradiation on the optical properties of nano-crystalline InP thin films

Thin films of InP were prepared onto glass and quartz substrates using laser ablation technique. Some of the prepared films were irradiated using a ⁶⁰Co γ -ray source irradiation with a total dose of 100 kGy at room temperature. The as deposited and irradiated films were identified by scanning electron microscopy, SEM and X-ray diffraction, XRD. The SEM images have shown a nano-flower like structure for the as deposited films and influenced by the irradiation dose. The Optical characterizations of the as deposited and irradiated InP films were studied using spectrophotometric measurements of transmittance T(λ) and reflectance, R(λ) at normal incidence of light in the spectral range from 200 nm to 2500 nm. The refractive index, n, and the absorption index, k values were calculated using a modified computer program based on minimizing (ΔT)² and (ΔR)² simultaneously, within the desired accuracy. Analysis of the dispersion of the refractive index in the range 900 ≤ λ ≤ 2500 was discussed in terms of the single oscillator model. The optical parameters, such as the dispersion energy, E_d, the oscillator energy, E_o, the high frequency dielectric constant, _∞ and the lattice dielectric constant, _L were evaluated for the as deposited and irradiated films. The allowed optical transitions were found to be direct for the as deposited and irradiated films with energy gaps of 1.35 eV and 1.54 eV, respectively.     

Effect of elevated temperature irradiation on bipolar devices for space application

ABSTRACT

The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradation at any dose rate, temperature and total dose numerically. The possibility of application of the conversion model for the numerical estimation of radiation-induced increase of LM111 input current under low dose rate radiation impact was demonstrated experimentally. A test method using four-stage elevated single temperature irradiation was proposed. The ability of temperature-switching approach for simulation of enhanced low-dose-rate sensitivity was estimated and discussed.     

Effect of gamma irradiation on high temperature hardness of low-density polyethylene

Gamma irradiation can cause the change of microstructure and molecular structure of polymer, resulting in the change of mechanical properties of polymers. Using the hardness measurement, the effect of gamma irradiation on the high temperature hardness of low-density polyethylene (LDPE) was investigated. The gamma irradiation caused the increase in the melting point, the enthalpy of fusion, and the portion of crystallinity of LDPE. The Vickers hardness of the irradiated LDPE increases with increasing the irradiation dose, annealing temperature, and annealing time. The activation energy for the rate process controlling the reaction between defects linearly decreases with the irradiation dose. The process controlling the hardness evolution in LDPE is endothermic because LDPE is semi-crystalline.     

一步法紫外曝光制备TiO2光敏凝胶光栅的初步研究

 以钛酸丁酯和苯甲酰丙酮为原料，经sol-gel工艺，获得具有负性光刻胶性质的TiO₂光敏凝胶薄膜。它的敏感波长在360nm附近，与反应生成的螯合环有关。结合掩模曝光和显影工艺，将条状或网格状的光栅图形引入光敏凝胶表面，获得光敏凝胶光栅。     

微波辐照对无线电引信的影响与作用机理

 选择某型集成电路无线电近炸引信,从勤务处理状态和工作状态两方面,研究了无线电引信的微波辐照效应,确定了被试无线电引信的微波辐照损伤阈值范围在140~150 kW/cm²之间,误炸阈值在100 kW/cm²左右。微波辐照通过前门耦合导致无线电引信的高频振荡管和低频组件产生硬损伤,通过直接作用于起爆执行电路使处于工作状态的无线电引信出现误炸。