共查询到18条相似文献,搜索用时 84 毫秒
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提出并优化了一种和现有SPICE软件如HSPICE完全兼容的IGBT等效电路模型.该模型摒弃了双极晶体管的所谓准静态假设而用精确的双极输运理论进行分析,更符合IGBT的实际工作条件.利用电压控制可变电阻模型等效IGBT的n-外延层的电导调制效应,取得了很好的效果.基于器件的非破坏实测参数以器件物理方程为基础的模型参数提取,计算依据正确,物理意义明确.用该模型计算了IGBT的I-V特性、开关特性等,与实测符合较好,误差不超过8%,此结果比已报道的同类模型要好,且更为简单方便. 相似文献
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提出并优化了一种和现有SPICE软件如HSPICE完全兼容的IGBT等效电路模型.该模型摒弃了双极晶体管的所谓准静态假设而用精确的双极输运理论进行分析,更符合IGBT的实际工作条件.利用电压控制可变电阻模型等效IGBT的n- 外延层的电导调制效应,取得了很好的效果.基于器件的非破坏实测参数以器件物理方程为基础的模型参数提取,计算依据正确,物理意义明确.用该模型计算了IGBT的I- V特性、开关特性等,与实测符合较好,误差不超过8% ,此结果比已报道的同类模型要好,且更为简单方便. 相似文献
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根据IGBT的基本结构和工作原理,建立了一种新的IGBT三维热模型。该模型考虑了Si材料的温度特性,模拟研究了焊料层空洞对器件热稳定性的影响。研究表明焊料层空洞对IGBT器件的热稳定性有很大的影响。实测结果、超声波显微镜以及红外显微镜的扫描图片证实模拟结果。该研究结果对于改进IGBT器件的可靠性有一定意义,值得器件应用工程师、设计及工艺工程师参考。 相似文献
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A physically based equation for predicting required p-emitter length of a snapback-free reverse- conducting insulated gate bipolar transistor (RC-IGBT) with field-stop structure is proposed. The n-buffer resis- tances above the p-emitter region with anode geometries of linear strip, circular and annular type are calculated, and based on this, the minimum p-emitter lengths of those three geometries are given and verified by simulation. It is found that good agreement was achieved between the numerical calculation and simulation results. Moreover, the calculation results show that the annular case needs the shortest p-emitter length for RC-IGBT to be snapback-free. 相似文献
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Young Hwan Lho 《ETRI Journal》2009,31(5):604-606
The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a 60Co gamma‐ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro‐model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases. 相似文献
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使用TCAD仿真软件对3 300 V沟槽栅IGBT的静态特性进行了仿真设计.重点研究了衬底材料参数、沟槽结构对器件击穿电压、电场峰值等参数的影响.仿真结果表明,随衬底电阻率增加,击穿电压增加,饱和电压和拐角位置电场峰值无明显变化;随衬底厚度增加,击穿电压增加,饱和电压增加,拐角位置电场峰值降低;随沟槽宽度增加,饱和电压降低,击穿电压和拐角位置电场峰值无明显变化;随沟槽深度增加,饱和电压降低,击穿电压无明显变化,拐角位置电场峰值增加;随沟槽拐角位置半径增加,击穿电压和饱和电压无明显变化,但拐角位置电场峰值减小.选择合适的衬底材料对仿真结果进行实验验证,实验结果与仿真结果相符,制备的IGBT芯片击穿电压为4 128 V,饱和电压约为2.18 V. 相似文献
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绝缘栅双极晶体管(IGBT)是微电子学研究的热点之一,而相关电路仿真迫切需要该器件的等效模型.本文提出基于傅里叶解双极扩散方程(ADE)的1200V场终止型IGBT物理模型,通过RC电路等效漂移区载流子分布,精确求解双极扩散方程.该模型针对大功率IGBT的工作原理,采用大注入假设条件,在综合分析场终止层的同时,根据1200V场终止型IGBT的特点考虑漂移区载流子的复合效应.在提取器件模型所需的关键参数后,用实际IGBT的测量结果对该模型的仿真结果进行了验证,通过分析静态以及关断瞬态特性曲线,仿真与实验数据误差均值小于8%,证明所建模型及参数提取方法的精确度. 相似文献
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A physical and simple method is proposed to extract the hybrid-π small-signal equivalent circuit model of Si/SiGe heterojunction bipolar transistor (HBT). In this method, we use test (dummy) structures to extract by means of fitting techniques the extrinsic bias-independent parameters representing the contact pads plus the transmission line connections to the core of the active device. All intrinsic bias-dependent parameters are calculated analytically from S-parameters only. The ratio of the area of the emitter contact to base area is used to solve the base–collector feedback problem due to the distributed nature of the base. Using this physical (geometry) constraint instead of the measured direct current (DC) information helps to get more reliable parameters and easier calculations. When we applied this methodology, a good agreement is obtained between the modelled S-parameters with the corresponding measured ones over the broad band from 40 MHz to 20.02 GHz. The error for three different bias points was less than 1.2%. 相似文献
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《Electron Devices, IEEE Transactions on》2009,56(3):431-440