Multi-carrier transport properties in p-type ZnO thin films

By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N–In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N–In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.     

Carrier transport of doped nanocrystalline Si formed by annealing of amorphous Si films at various temperatures

Phosphorus- and boron-doped hydrogenated amorphous silicon thin films were prepared by the plasma-enhanced chemical vapor deposition method. As-deposited samples were thermally annealed at various temperatures to get nanocrystalline Si with sizes around 10 nm. X-ray photoelectron spectroscopy measurements demonstrated the presence of boron and phosphorus in the doped films. It is found that the nanocrystallization occurs at around 600 °C for the B-doped films, while it is around 700-800 °C for the P-doped samples. For the P-doped samples, the dark conductivity decreases at first and then increases with the annealing temperature. While for the B-doped samples, the dark conductivity monotonously increases with increasing annealing temperature. As a result, the carrier transport properties of both P- and B-doped nanocrystalline Si films are dominated by the gradual activation of dopants in the films. The conductivity reaches 22.4 and 193 S cm⁻¹ for P- and B-doped sample after 1000 °C annealing.     

Multi-channel magnetotransport in Co2FeSi/(Al,Ga)As spin-LEDs

We have performed Hall effect measurements on Co₂FeSi/(Al,Ga)As spin light emitting diodes and have found unique field dependencies that differ strongly from the expected behaviors for both the ferromagnetic Co₂FeSi layer and the underlying semiconductor structure. To understand such unique field dependencies, we have developed a multi-channel transport model for parallel transport through a ferromagnet and a semiconductor. By applying this model to our data for the Hall and sheet resistance, we extract values for the carrier density and mobility in the semiconductor layer. We find that these values decrease with increasing growth temperature of the Co₂FeSi layer, presumably due to stronger in-diffusion of Co and Fe impurities, which compensate the n-type dopants in the underlying n-(Al, Ga) As layer. Despite such compensation, spin-LEDs with the Co₂FeSi layer grown at the relatively high temperature of 280 °C exhibit the highest spin injection efficiencies of more than 50%, hence calling into question the requirement of electron tunneling through the ferromagnet/semiconductor Schottky barrier for efficient spin injection.     

Electrical transport properties of Ag3Sn compound

The temperature behaviors of the electrical resistivity in polycrystalline Ag₃Sn bulk samples were investigated experimentally. We found that the temperature dependence of resistivity shows concave function characteristics from 305 down to 26 K, and can be described by a parallel resistor model [H. Wiesmann et al., Phys. Rev. Lett. 38 (1977) 782]. The resistivities of all samples reveal T² behavior from 26 down to . We compared our data to the existing theories in which the T² dependence of resistivity has been proposed. However, we found none of them can describe the experimental data, and the physical mechanism of the T² behavior of resistivity at low temperatures is still enigmatical.     

非对称结构对黑磷烯器件电子输运的影响

利用不同宽度的锯齿型黑磷烯纳米带构建了非对称结构的纳米器件.第一性原理计算结果表明,非对称结构器件I-V曲线展现表现出整流效应,最大整流比达到1.01×10~6.器件的不同非对称结构导致了不同整流行为.我们通过传输谱和透射本征态讨论得到,器件中心区域和电极的耦合变化导致了本征态的变化,从而产生不同的电子输运性质.结果为基于黑磷烯二维材料异质结整流器件的设计提供了一种可行性方案.     

ZnMgAlO based transparent conducting oxides with modulatable bandgap

ZnMgAlO films with a broad spectral range of optical transmission and high conductivity were prepared by pulsed laser deposition. The optical and electrical properties of ZnMgAlO films could be controlled by adjusting Al and Mg contents. As the Mg content increased from 10 to 30 at.%, the bandgap value could be modulated from 3.78 to 4.66 eV, and the transparent wavelength range was widened within near-UV, visible and near-IR regions. The optimized ZnMgAlO film possesses a wide bandgap of 4.5 eV and a low resistivity of  cm. The broad spectral range of optical transmission and high conductivity maked ZnMgAlO films are of interest as TCO window materials for optoelectronic devices.     

First-principles study of the electronic transport properties of a C131 -based molecular junction

Using first-principles density functional theory and the non-equilibrium Green’s function formalism, we have studied the electronic transport properties of the dumbbell-like fullerene dimer C₁₃₁-based molecular junction. Our results show that the current-voltage curve displays an obvious negative differential resistance phenomenon in a certain bias voltage range. The negative differential resistance behavior can be understood in terms of the evolution of the transmission spectrum and the projected density of states with applied bias voltage. The present findings could be helpful for the application of the C₁₃₁ molecule in the field of single molecular devices or nanometer electronics.     

Hydrogen passivation effect on the yellow-green emission band and bound exciton in n - ZnO

Photoluminescence (PL) measurements performed on as-grown, hydrogenated, and annealed n-type ZnO bulk samples investigated the origins of their yellow (2.10 eV) and green (2.43 eV) emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the room temperature PL spectrum, the peak intensity at 2.43 eV was unchanged, and the intensity of the emission peak at 3.27 eV increased significantly. These results indicate that yellow band emission is due to oxygen vacancies, as the emission peak at 2.10 eV disappears when hydrogen atoms passivate these vacancies. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the shallow donor impurities arising due to these hydrogen atoms in the ZnO bulk sample.     

Transport properties of a double quantum dot molecule in the presence of impurity effects

In this Letter, we studied the electronic transport through a parallel-coupled double quantum dot (DQD) molecule including impurity effects at zero temperature. The linear conductance can be calculated by using the Green's function method. An obvious Fano resonance arising from the impurity state in the quantum dot is observed for the symmetric dot-lead coupling structure in the absence of the magnetic flux through the quantum device. When the magnetic flux is presented, two groups of conductance peaks appear in the linear conductance spectra. Each group is decomposed into one Breit-Wigner and one Fano resonances. Tuning the system parameters, we can control effectively the shapes of these conductance peaks. The Aharonov-Bohm (AB) oscillation for the magnetic flux is also studied. The oscillation period of the linear conductance with π, 2π or 4π may be observed by tuning the interdot tunneling coupling or the dot-impurity coupling strengths.     

First-principles calculations of the electronic structure and Mössbauer parameters of Sb-doped

The electronic structure and the ¹¹⁹Sn and¹²¹Sb Mössbauer parameters of Sb-doped SnO₂ were calculated using a first-principles method. We show that substitution of Sn by Sb leads to a small decrease of the distances between the dopant and the six oxygen first-nearest neighbours. The most important modifications in the electronic structure are related to the bottom of the conduction band, which has Sb 5s, Sn 5s and O 2p characters. By considering two supercell sizes and charged supercells we show that antimony oxidation state is Sb⁵⁺ and we explain the origin of the Mössbauer parameters from the local electronic structure of the cations.     

Interlayer transport of an electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

The interlayer transport of an electron in bilayer graphene influenced by a phonon in the presence of a biased potential is investigated using the tight-binding approach. The in-plane optical mode E2g and out-of-plane optical mode B1g associated with the applied biased potential are considered to compute and discuss the interlayer transport probability of an electron initially localized on the bottom layer at the Dirac point in the Brillouin zone. Without the biased potential, the interlayer transport probability is equal to 0.5 regardless of the phonon displacement except for a few special cases. Applying a biased potential to the layers, we find that in different phonon modes the function of the transport probability with respect to the applied biased potential and phonon displacement is complex and various, but on the whole the transport probability decreases with the increase in the absolute value of the applied biased potential. These phenomena are discussed in detail in this paper.     

Effects of Stone-Wales Defect Symmetry on the Electronic Structure and Transport Properties of Narrow Armchair Graphene Nanoribbon

We report a first principles calculation to investigate the electron transport properties of defected armchair graphene nanoribbon (AGNR) influenced by Stone-Wales (SW) defect. The SW defect is found to be able to effectively influence the electronic structure of the defected AGNRs, and their electron transport behaviors can exhibit prominent differences depending on the symmetry of the nanostructured morphology. Moreover, our simulations have revealed that the introducing of the SW defect could be favorable for the electron transport of the defective AGNR. Our investigation has confirmed the possibility of tuning the electron transport of graphene nanoribbon by introducing a topological defect, which could be helpful to extending the field of applications for graphene nanoribbon-based nanodevices.     

Structural, electronic and magnetic properties of the 3d transition metal-doped GaN nanotubes

We have performed first-principles calculations on the structural, electronic and magnetic properties of seven different 3d transition-metal (TM) impurity (V, Cr, Mn, Fe, Co, Ni and Cu) doped armchair (5,0) and zigzag (8,0) gallium nitride nanotubes (GaNNTs). The results show that there is distortion around 3d TM impurities with respect to the pristine GaNNTs for 3d TM-doped (5,5) and (8,0) GaNNTs. The change of total magnetic moment follows Hund’s rule for 3d TM-doped (5,5) and (8,0) GaNNTs, respectively. The total density of states (DOS) indicates that Cr-, Mn-, Fe- and Ni-doped (5,5) GaNNTs as well as Cr-, Mn-, Ni- and Cu-doped (8,0) GaNNTs are all half-metals with 100% spin polarization. The study suggests that such TM-doped nanotubes may be useful in spintronics and nanomagnets.     

Transport properties of a single-quantum dot Aharonov-Bohm interferometer

We consider a two-terminal Aharonov-Bohm (AB) interferometer with a quantum dot inserted in one path of the AB ring. We investigate the transport properties of this system in and out of the Kondo regime. We utilize perturbation theory to calculate the electron self-energy of the quantum dot with respect to the intradot Coulomb interaction. We show the expression of the Kondo temperature as a function of the AB phase together with its dependence on other characteristics such as the linewidth of the ring and the finite Coulomb interaction and the energy levels of the quantum dot. The current oscillates periodically as a function of the AB phase. The amplitude of the current oscillation decreases with increasing Coulomb interaction. For a given temperature, the electron transport through the AB interferometer can be selected to be in or out of the Kondo regime by changing the magnetic flux threading perpendicular to the AB ring of the system.     

Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide

In recent years there have been reports of anomalous electrical resistivity and the presence of superconductivity in semiconducting InN layers. By a careful correlation of the temperature dependence of resistivity and magnetic susceptibility with structural information from high-resolution x-ray diffraction measurements, we show that superconductivity is not intrinsic to InN and is seen only in samples that show traces of oxygen impurity. We hence believe that InN is not intrinsically a superconducting semiconductor.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.     

Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells

Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found to decrease with increasing temperature and increase with increasing magnetic field in the classical region.      

Coulomb repulsion effects in driven electron transport

We study numerically the influence of strong Coulomb repulsion on the current through molecular wires that are driven by external electromagnetic fields. The molecule is described by a tight-binding model whose first and last site is coupled to a respective lead. The leads are eliminated within a perturbation theory yielding a master equation for the wire. The decomposition into a Floquet basis enables an efficient treatment of the driving field. For the electronic excitations in bridged molecular wires, we find that strong Coulomb repulsion significantly sharpens resonance peaks which broaden again with increasing temperature. By contrast, it has only a small influence on effects like non-adiabatic electron pumping and coherent current suppression.     

Transport properties of AB-stacked bilayer graphene nanoribbons in an electric field

The electronic and thermal properties of AB-stacked bilayer graphene nanoribbons subject to the influences of a transverse electric field are investigated theoretically, including their transport properties. The dispersion relations are found to exhibit a rich dependence on the interlayer interactions, the field strength, and the geometry of the layers. The interlayer coupling will modify the subband curvature, create additional band-edge states, change the subband spacing or energy gap, and separate the partial flat bands. The bandstructures will be symmetric or asymmetric about the Fermi energy for monolayer or bilayer nanoribbons, respectively. The inclusion of a transverse electric field will further alter the bandstructures and lift the degeneracy of the partial flat bands. The chemical-potential-dependent electrical and thermal conductance exhibit a stepwise increase behavior. Variations in the electronic structures with field strength will be reflected in the electrical and thermal conductance. Prominent peaks, as well as single-shoulder and multi-shoulder structures in the electrical and thermal conductance are predicted when varying the electric field strength. The features of the conductance are found to be strongly dependent on the field strength, the geometry, interlayer interactions and temperature.     

Bound states of an electron in an impurity potential on the surface of liquid helium

The energies and widths of the levels of an electron on impurity centers on the surface of liquid helium are calculated with allowance for the deformation of the surface. The level shift associated with the deformation effects is small and decreases very slowly with increasing level number. However, even a small shift of the energy levels relative to one another affects ripplon scattering, which makes the main contribution to the level width at low temperatures. It is predicted theoretically that this width depends very strongly on the external parameters and on the level number and that a maximum obtains at a clamping field E _⊥=51500 V/cm. The width of the levels of an electron in a bound state is found to be less than for free electrons. This makes it possible to perform a beautiful spectroscopic experiment. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 9, 599–604 (10 November 1997)