An approximate expression for the galvanomagnetic tensor

Using the iterative solution to the Boltzmann equation for electrons in d.c. electric and magnetic fields, an expression for the resistivity tensor can be obtained in the form of an infinite series. This series can be approximated by retaining only the first two terms. In the cases where relaxation times exist — in the sense that the collision term in the Boltzmann equation can be written asg(k)/τ(k), whereτ(k) is the relaxation time, andf (k) = f _E(ɛ k) + [∂f _E(εk)/∂ε]·g(k) the distribution function for electrons with wavevectork — this approximation is exact. For polyvalent metals in the one-OPW approximation, the complete galvanomagnetic tensor can be obtained using this approximation and the result differs from that obtained by using a time of relaxation given by an expression suggested byZiman. A calculation for a simple model Fermi surface, with screened Coulomb scattering, is carried out and the results compared with those of the relaxation time approximation.     

Multiphonon absorption of light in quantum-well systems in uniform electric and magnetic fields

The effect of a transverse electric field on the multiphonon absorption of light in quantum-well systems in a uniform magnetic field aligned parallel to the spatial quantization axis is investigated. It is shown that, when the interaction of an electron with long-wavelength vibrations is taken into account, the half-width of the absorption line does not depend on the electric-field vector E. As the electric field strength increases, the maximum of the light absorption shifts toward the long-wavelength range and decreases. The effect of the electric field on the shape of the zero-phonon line and first vibrational satellites is analyzed with due regard for the interaction of charge carriers with optical phonons. It is demonstrated in particular that the half-width of the zero-phonon line substantially depends on the electric-field vector E and can reach several millielectron-volts at the electric field strength E = 2 × 10⁴ V/cm.     

Resonant influence of hypersound on the radiation of an axially channeled electron

Abstract

The spectral intensity of the radiation emitted by an axially channeled electron in a single crystal excited by a longitudinal hypersonic wave propagating along the channeling direction has been calculated for the energy range 10MeV ≤ E ≤ 100 MeV. It has been shown that under the influence of acoustic vibrations excited in the single crystal a resonant intensification of the electron channeling radiation, a variation of its spectral distribution as well as inverse radiative transitions are possible.     

Thickness-shear modes and magnetoelastic waves in a longitudinally magnetized ferromagnetic plate

Magnetoelastic (ME) waves and thickness-shear modes in the ferromagnetic plate are studied. Coupled vibrations of magnetization and shear elastic deformations excited simultaneously by a variable magnetic field propagate in two mutually perpendicular directions: parallel and normal to a surface. For parameters characteristic of isotropic ferromagnet with the sample magnetization and Zeeman field parallel to the surface, resonant frequencies of shear modes are computed and their dispersion law is examined. It is shown that the dependence of dimensional resonances frequencies on wave number k_z of ME wave propagating along saturating field direction occurs. The possibility of excitation of ME waves with different k_z explains multimode character of thickness ME resonances.     

GeTe和GeSe 分子在外电场下的特性研究

对Ge原子采用6-311++G^**基函数,Te和Se原子采用SDB-cc-pVTZ基函数,利用密度泛函理论的局域自旋密度近似方法优化得到了GeTe和GeSe分子的稳定构型,并计算了外电场作用下GeTe和GeSe基态分子的平衡核间距、总能量、最高已占据分子轨道能量E_H、最低未占分子轨道能量E_L、能隙、谐振频率和红外谱强度. 在上述计算的基础上利用单激发组态相互作用-局域自旋密度近似方法研究了GeTe和GeSe分子在外电场下的激发特性. 结果表明:随着正向电场强度的增大,分子核间距逐渐增大,分子总能量逐渐降低,谐振频率逐渐减小,红外谱强度则逐渐增大. 在0-2.0569×10¹⁰ V·m^-1的电场范围内,GeTe分子的E_H 均高于GeSe分子的E_H;随着正向电场的增大,GeTe与GeSe的E_H差逐渐变大,GeTe的E_L低于GeSe的E_L,它们的E_L均随正向电场的增大而增大. 无外场时,GeTe分子的能隙比GeSe分子的能隙要小;在外电场反向增大的过程中, GeTe和GeSe的分子能隙始终减小. 外电场的大小和方向对GeTe和GeSe分子的激发能、振子强度及跃迁的波长均有较大影响. 关键词： GeTe GeSe 外电场 激发态     

Transmission optique,en lumiere polarisse,de couches tres minces de potassium,sous incidence oblique

The transmission factors of potassium thin films have been determined for incidence angles of 0°, 45°, 70°, the electric field E being either parallel or perpendicular to the incidence plane. These factors present important differences according to the polarization. Evidence has been found for the existence of two anomalous absorption bands. These bands can be connected with the existence of two plasma frequencies, which are associated with an electric field component parallel or perpendicular to the thin film.     

Field-induced light deflection in lithium niobate and lithium tantalate: the possible configurations

Field-induced light deflection by ferroelectric domain walls in lithium niobate (LN) and lithium tantalate (LT) is theoretically studied. The phenomenon can occur not only when both the incident wave vector k and the electric field E are parallel to the z-axis—as demonstrated by experiments made so far—but also when E and/or k are perpendicular to z. In particular, for E parallel to x and k parallel to y, the deflection phenomenon is predicted to have the same characteristics as in triclinic or monoclinic ferroelastics: the large deflection angle is related to the natural birefringence, whereas the deflection amplitude is proportional to the small tilt angle of the neutral lines, which is here induced by the electric field. In periodic domain structures, interference between deflected waves occurs, and the deflected intensity is expected to be largely enhanced when the Bragg condition is satisfied. This transverse configuration is thus specially attractive to characterize periodically-poled crystals.     

Optische Absorption und Fluoreszenz von NH 2 − - und ND 2 − -Ionen in Alkalihalogenidkristallen

The centers are produced by different methods. Either the crystal, containingF centers in a high concentration, is annealed in an atmosphere of ammonia. Or the NH ₄ ⁺ doped crystal is reduced withF centers. The optical absorption in the near infrared at 21 °K shows a well resolved doublett and another band at longer wavelengths. In the case of deuterated centers these bands are shifted by about √2 to longer wavelengths. These bands belong to the two stretching vibrations and the bending vibration of the NH ₂ ^? . In the UV a strong absorption band appears with satellites on its short wavelength side. Its maximum follows a Mollwo-Ivey relation. The satellites come from the simultaneous excitation of internal vibrations of the NH ₂ ^? . Their energy distance to the main maximum depends strongly on the hydrogen isotope. Excitation in the UV bands yields a flourescence in the visible region. It consists of two bands. They are interpreted as 0–0 transitions relative to the internal vibrations of the center. Their relative hight strongly depends on the temperature. We think that both bands are due to different positions of the amide ion in the excited state within the anion vacancy. From a detailed study of this temperature dependance typical activation energies can be derived.     

Luminescence and decay times of CsI:In+

Luminescence spectra of single crystals of CsI:In⁺ excited in the A(304 nm), B(288 nm), C(268 nm) and D(257 nm) absorption bands have been studied in the temperature range 4.2–300 K. Excitation in the A band at 4.2 K gives rise to the principal emission at 2.22 eV accompanied by a partly-overlapping weak band at 2.49 eV. An additional emission band at about 2.96 eV is observed on excitation in the B, C or D bands. Yet another emission band located at 2.67 eV is excited only in the D band. The relative intensities of the bands are very sensitive to excitation wavelength as well as to temperature. The origin of all these bands is assigned in terms of a model for the relaxed excited states (RES). All the luminescence spectra were resolved into an appropriate number of skew-Gaussian components. Moments analysis leads to a value of (1.35 ± 0.02) × 10¹³ rad s^-1 for the effective frequency (ω_eff) of lattice vibrations coupled to the RES. At the lowest temperature, the radiative decay times of each of the intracenter emission bands (2.22, 2.49 and 2.96 eV) show a slow decay ( ～ 10–100 μs) and a fast decay ( ～ 10–100 ns). The 2.96 eV band, which is assigned to an emission process which is the inverse of the D-band absorption, exhibits a single decay mode ( ～ 10 μs). The intrinsic radiative decay rates (k₁, k₂), the one-phonon transition rate (K) and the second-order spin-orbit splitting (D) for the RES responsible for the principal emission are: k₁ = (6.0±-0.3)×10³ s^-1, k₂ = (1.33±-0.06)×10⁵ s^-1, K = (2.4±-0.4)×10⁷ s^-1 and D = (13.8±-0.5) cm^-1.     

T-odd asymmetries for evaporation neutrons in nuclear fission

T-odd asymmetries in the angular distributions of evaporation neutrons emitted by thermalized fission fragments in the fission of axially symmetric deformed nuclei by cold polarized neutrons are investigated within the quantum theory of fission. The asymmetries in question are due to the anisotropy of angular distributions of evaporation neutrons in the center-of-mass systems of the fission fragments, and this anisotropy arises from the orientation of large-value fission fragment spins in the direction perpendicular to the direction K ₀ of the symmetry axis of the fissioning nucleus at the time of its scission, caused by zero wriggling vibrations of the fissioning nucleus. The angle of rotation of the vector k ₀ with respect to the asymptotic direction k ₀ of the fissioning nucleus symmetry axis is calculated with allowance for the interference of fission amplitudes of neutron resonances excited in a fissioning nucleus as it captures an incident neutron. It is shown that the T-odd asymmetry coefficient for evaporation neutrons is close in structure and value to the analogous coefficient for evaporation γ-rays.     

外场下SnS分子结构及其特性

对S原子采用6-311++G**基组,Sn原子采用SDB-cc-pVTZ基组,利用密度泛函(B3P86)方法对SnS分子进行了基态结构优化,并研究了外场作用下SnS基态分子键长、能量、能级分布、电荷布居分布、谐振频率和红外谱强度的影响规律.然后利用含时密度泛函(TD-B3P86)方法研究了SnS分子在外场下的激发特性.结果表明,在所加的电场范围内(-0.04 a.u.-0.04 a.u.),随着正向电场的增大,分子键长和红外谱强度均是先减小后增大;总能E,SnS基态分子的最高已占据轨道能量EH和谐振频率均是先增大后减小;分子的最低未占空轨道能量EL和能隙Eg均随正向电场的增大而减小.随着正向电场的增大,SnS分子由基态至前9个单重激发态跃迁的波长增大,激发能则减小.     

Octupole vibrations of the superdeformed196Pb nucleus

The study of the superdeformed (SD)¹⁹⁶Pb nucleus has been revisited using the Eurogam Phase 2 spectrometer. All of the three observed excited SD bands were found to decay to the yrast SD band through, presumably,E1 transitions, allowing relative spin and excitation energy assignments. Comparisons with calculations using the random-phase approximation suggest that all three excited bands can be interpreted as octupole vibrational structures.     

Excitonic polaron in the molecular crystal model: Nonlocal dynamic coherent-potential approximation

A nonlocal dynamic coherent-potential approximation is formulated as a further development of the dynamic coherent-potential method. The nonlocal dynamic coherent-potential approximation is an efficient method of determining the one-exciton Green’s function in a model with the Hamiltonian in the strong-coupling approximation, where a spectrum of optical phonons is assumed, and the exciton-phonon interaction operator is linear or quadratic in the phonon operators. A system of recursion equations is derived, from which the coherent potential is found as a function of the energy E and the wave vector k. An analytical expression is derived for the one-exciton Green’s function in the case of narrow (in comparison with the phonon energy) exciton bands and exciton-phonon interaction linear in the phonon operators. For broader exciton bands and more complex exciton-phonon interaction the system of equations determining the coherent potential represents a recursion algorithm, which can be effectively implemented by numerical means. Fiz. Tverd. Tela (St. Petersburg) 39, 1560–1563 (September 1997)     

Surface electronic structure of Ge(001)2 × 1: experiment and theory

Detailed studies of the surface electronic structure of Ge(001)2 × 1 have been performed with angle-resolved photoemission. Five surface structures are identified in the spectra and their initial-energy dispersions E(k_∥) are presented along the [010] direction. Employing the local density approximation and Green's functions, the surface band structure along this direction has been calculated self-consistently for an asymmetric dimer model of the 2 × 1-reconstructed surface. Four of the five experimental surface structures are identified with calculated surface states or resonances, i.e. the dangling-bond state and two different back-bond resonances. Excellent agreement is obtained between the experimental and theoretical dispersions for these surface electronic bands.     

Kinetics of the photoconductivity and absorption in the D −(A +) bands in doped silicon

The photoconductivity (PC) spectra and the induced absorption of background radiation in the energy range 10–40 meV are investigated in weakly compensated B-, Ga-, and As-doped silicon at 4.2 K. It is shown that dips corresponding to the photoionization of long-lived excited states of B and As are observed in the PC spectra on the D ⁻(A ⁺) bands. It is found that the frequency dependence of the PC spectra corresponds to excitation relaxation times of the order of 10⁻⁴ s for the states in the D ⁻ (A ⁺) bands. It is established that in electric fields E>100 V/cm the PC decreases sharply, while the induced absorption of the background radiation changes very little. This confirms the conclusion that the excitation of the D ⁻ (A ⁺) itself makes the main contribution to the PC. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 224–227 (25 August 1997)     

Experimental and theoretical study of the IR spectrum of 4-amyloxy-4′-cyanobiphenyl

The IR absorption spectrum of polycrystalline 4-amyloxy-4′-cyanobiphenyl (5OCB) is measured in a KBr pellet over the range 400–4000 cm^?1. The structure of the molecule and the frequencies and intensities of the bands in the spectrum are calculated in the approximation of the B3LYP hybrid density functional with the 6-31G(d) and 6-31+G(d) basis sets. With the method of linear scaling of frequencies, 39 bands of the experimental IR spectrum are assigned. On the basis of calculations for related compounds, the vibrations belonging to the substituents and the biphenyl fragment are ascertained. It is shown that the IR absorption spectra of polycrystalline 4-hydroxypropyl-4′-cyanobiphenyl and 5OCB are almost identical and differ by the occurrence of three bands associated with vibrations localized on the oxyamyl radical.     

Circular electrodichroism of light in isotropic optically active media

Circular electrodichroism is predicted in liquids and gases containing unequal concentrations of mirror stereoisomers of chiral molecules. A longitudinal (quasi)static electric field increases absorption for a light wave circularly polarized in one direction and decreases the absorption for a wave circularly polarized in the opposite direction. The corresponding nonlinear susceptibility is proportional to the decay constants of the excited states and is absent in a nondissipative medium. Estimates of the magnitude of the effect are presented and show that it may well be observable experimentally. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 8, 515–520 (25 October 1997)     

Das Fluktuationsspektrum von Elektronen in einem stationären Nichtgleichgewichtszustand

The Boltzmann equation is used to calculate the time correlation function and the fluctuation spectrum for electrons obeying classical statistics. The stationary joint distribution for one electron to be initially ink ₀=k(0) and finally ink=k(t) is given by the product of the conditional probability and the stationary distribution. These quantities can be found from the Boltzmann equation if there exists, for any initial distribution, a unique solution which satisfies the Markov equation and tends to a stationary solution for large times under stationary conditions. It is proved that these conditions hold for linear collision operators and in the relaxation approximation. General operator expressions for the fluctuation spectrum and the differential conductivity in a stationary electric field are given, which can be evaluated within the usual approximation schemes known for the stationary, nonequilibrium solutions of the Boltzmann equation. In equilibrium they reproduce the classical fluctuation dissipation theorem. In a nonequilibrium state they define a noise temperature depending on the field. In the relaxation approximation and for polynomial band structure the exact solution can be found. For parabolic and biparabolic spherical bands the result is discussed explicitly.     

The relation between the electronic and magnetic structures of manganites in the tight-binding approximation

Analytic expressions for the dispersion curves E(k) of RMnO₃ (R=La, Pr, Nd, Sm, and other RE elements) have been obtained in the tight-binding approximation for the main types of magnetic ordering on the Mn sublattice. The first calculation of E(k) taking into account the oxygen subsystem and mutual ordering of the manganese and RE sublattices is reported. The results obtained permit a qualitative interpretation of some features observed in the behavior of the rare-earth manganites. Fiz. Tverd. Tela (St. Petersburg) 41, 2179–2182 (December 1999)     

A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI.At a low k value the electric field strength in the dielectric buried layer (E I) is enhanced and a Si window makes the substrate share the vertical drop,resulting in a high vertical breakdown voltage;in the lateral direction,a high electric field peak is introduced at the Si window,which modulates the electric field distribution in the SOI layer;consequently,a high breakdown voltage (BV) is obtained.The values of EI and BV of LK PSOI with kI=2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%,respectively,compared with those of the conventional PSOI.Furthermore,the Si window also alleviates the self-heating effect.