Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Fractional-dimensional polaron corrections in asymmetric GaAs-Ga1−xAlxAs quantum wells

Polaron effects in asymmetric GaAs-Ga_1−xAl_xAs quantum wells (QWs) are investigated within the framework of the fractional-dimensional space approach and by using second-order perturbation theory. A well-width dependence of the polaron corrections with a dip and a peak is obtained for both symmetric and asymmetric QWs. The dip and the peak occur in the case of asymmetric QWs for larger well widths than in the case of symmetric QWs. An enhancement of the contrast between the dip and the peak of the polaron energy shift is found for the case of asymmetric QWs. These results show the convenience of using asymmetric QWs instead of symmetric ones in any experimental attempt of detecting the dip and the peak of the polaron energy shift.     

Bound polaron in a wurtzite GaN/AlxGa1 − xN ellipsoidal finite-potential quantum dot

A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/Al_xGa_1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.     

Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates

A pseudopotential formalism within the virtual crystal approximation in which the effects of composition disorder are involved is applied to the Ga_xIn_1−xAs_yP_1−y quaternary alloys in conditions of lattice matching to GaAs, InP and ZnSe substrates so as to predict their energy band gaps. Very good agreement is obtained between the calculated values and the available experimental data for the alloy lattice matched to InP and GaAs. The alloy is found to be a direct-gap semiconductor for all y compositions whatever the lattice matching to the substrates of interest. The (Γ→Γ) band-gap ranges and the ionicity character are found to depend considerably on the particular lattice-matched substrates suggesting therefore that, for an appropriate choice of y and the substrate, Ga_xIn_1−xAs_yP_1−y could provide more diverse opportunities to obtain desired band gaps, which opens up the possibility of discovering new electronic devices with special features and properties.     

First-principles calculations of the optical band-gaps of ZnxCd1−xO alloys

Using first-principles calculations, we investigated the structural and electronic properties of two binaries: ZnO in wurtzite structure and CdO in wurtzite and rock-salt structures. In addition several compositions with various ordered structures of Zn_xCd_1−xO alloys were studied within the theory of order–disorder transformation. The full potential linearized augmented plane wave method was used and the d orbitals of Zn and Cd were included in the valence bands. In this investigation of alloying ZnO with CdO, the fundamental band-gap of the alloys is shown to be direct and to decrease versus the Cd composition.     

Very strong interlayer exchange coupling in epitaxial Fe/Fe1−xSix/Fe trilayers (x=0.4–1.0)

Fe/Fe_1−xSi_x/Fe (x=0.4–1.0) wedge-type epitaxial trilayers with improved homogeneity are grown by co-evaporation from two electron-beam sources. The coupling strengths of the bilinear (J₁) and biquadratic (J₂) coupling terms are derived from Brillouin light scattering (BLS) spectra and longitudinal MOKE hysteresis loops. The total coupling strength J=J₁+J₂ increases dramatically with increasing x and reaches values in excess of 6 mJ/m².     

Viscosity of In100 − xSbx molten alloys in the vicinity of equiatomic composition

The viscosity of In–Sb liquid alloys has been measured in the vicinity of equiatomic concentration (40–60 at.% Sb). The measurements were carried out by a torsional oscillation viscometer. Temperature dependence of viscosity coefficient shows the Arrhenius like behavior with anomalous increase near the melting temperature. It is shown that viscosity isotherms reveal a sharp maximum at equiatomic composition, which becomes smoother with temperature increase.     

Structural properties and Raman spectroscopy of orthorhombic (Eu1−xPrx)0.6Sr0.4MnO3 (0≤x≤1.0)

The effect of Pr doping on structural properties and room temperature Raman spectroscopy measurements is investigated in manganites (Eu_1−xPr_x)_0.6Sr_0.4MnO₃ (0≤x≤1.0) with fixed carrier concentration. The result of the Rietveld refinement of x-ray powder diffraction shows that these compounds crystallize in an orthorhombic distorted structure with a space group Pnma. It is evident that, with increasing Pr substitution, three types of orthorhombic structures can be distinguished. The phonon frequencies of the three main peaks, in room temperature Raman-scattering measurements, have been discussed together with their structural characteristics, such as bond-length, bond-angles, and the change of orthorhombic structure type. With the increase of Pr content, the mode at 491  cm⁻¹ also shows a corresponding change. A step effect becomes evident, which seems to indicate the close dependence between the frequency shift of this mode and the change in crystal symmetry. This further supports the notion that the mode at 491  cm⁻¹ is closely correlated with the Jahn–Teller distortion. Moreover, we have found that the lowest frequency peak (assigned as an A_1g phonon mode) depends linearly on the tolerance factor t.     

The experimental and theoretical investigation of vibration spectra in ferroelectric semiconductor SbSBrxI1−x crystals

The vapor grown SbSBr_xI_1−x (x=0.1; 0.5; 0.9) crystals with clear mirror surfaces have been used for infrared reflection measurements with Fourier spectrometer. The vibration frequencies along c(z)-axis have been derived from Kramers–Kroning and optical parameters fitting analysis of the experimental reflectivity spectra at T=300 K. The theoretical vibration spectra of SbSBr_xS_1−x (x=0.1; 0.5; 0.9) crystals in paraelectric phase (T=300 K) along c(z)-axis have been determined in quasiharmonic approximation by diagonalization of dynamical matrix. The theoretical vibration spectra of these crystals in a–b(x−y) plane have been determined in harmonic approximation. In this work we discuss the nature of anharmonism in SbSBr_xI_1−x crystals along the c(z)-axis.     

Electrochemical behaviour of (La1 − xSrx)sCo1 − yNiyO3 − δ as porous SOFC cathodes

This paper shows that storage at room temperature and ambient atmosphere appears to affect the polarisation resistance significantly and R_P decreased initially with storage time. This improvement was more pronounced when stored in moisturised air. The performance was, however, also found to decrease when stored for sufficiently long periods. The absolute values of the electrode response of these materials are very difficult to reproduce and the performance appears to be largely dependent on the manufacturing process of the powder or the electrode itself. In spite of this, the electrode behaviours exhibited similar patterns with respect to the dependence on T and P_O2. An increase in polarisation resistance with time at SOFC operating conditions was observed, which was related exclusively to the electrode reaction kinetics and not to oxygen concentration polarisation. It was also found to be higher when measured in moisturised air.     

Growth and properties of ferromagnetic In1−xMnxSb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In_1−xMn_xSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In_1−xMn_xSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.     

The structural features of Cu1−xPbx liquid alloys

Structure of Cu_1−xPb_x (x=0, 0.025, 0.05, 0.075, 0.1, 0.125) molten alloys has been studied by means of X-ray diffraction method. Structural parameters obtained from structure factors (SF) and radial distribution functions were analyzed. Partial structure factors were calculated by using Reverse Monte-Carlo method. It is shown that tendency to preferred interaction of atoms of the same kind grows with increasing of lead content.     

Ferromagnetic Zr1−xMnxCo2 laves phase compounds

Structure and magnetic properties of the Zr_1−xMn_xCo_2+δ alloys were studied for 0 x <0.7, δ=0, 0.45. The cubic C15 Laves phase structure shows Mn solubility up to x≈0.4. The other Laves phase with the hexagonal C36 structure found for x0.5 apparently has a small region of Mn solubility in the vicinity of Zr_0.4Mn_0.6Co₂. Though the parent Mn-free compounds are known to be paramagnetic, the Mn-substituted alloys show ferromagnetic behavior with the Curie temperatures up to 625 K and the room-temperature saturation magnetization of about 100 emu/g. The onset of ferromagnetism with the Mn substitution for Zr may be caused by polarization of itinerant 3d electrons, like it was earlier supposed for the off-stoichiometric ZrCo_2+δ. The universal composition dependencies of the intrinsic magnetic properties for different δ can be obtained, if plotted against the amount of zirconium atoms missing in its sublattice. The room-temperature anisotropy with the noticeable anisotropy field of 24 kOe and the 1 1 0 easy magnetization direction laying in a basal plane was found in the hexagonal Zr_0.5Mn_0.5Co₂.     

Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Indium aluminium antimonide (In_1−xAl_xSb) and cadmium mercury telluride (Cd_xHg_1−xTe) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.     

The determination of the x value in doped Hg1-xCdxTe by transmission spectra

Variable-temperature transmission/absorption spectra are measured on As-doped Hg_1-xCd_xTe grown by molecular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on V_textrmHg (unintentionally)-doped HgCdTe. By referring to the empirical formulas of E_g(x, T), the x value of the epilayer is calculated and its inconsistency between the extreme temperatures (e.g. 10 and 300 K) is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value (or E_g) in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible (e.g. 10 K), and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.     

Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted Al_xGa_1−xN with different AlN contents (in the range 0≤x≤0.2) and from implanted In_xAl_1−xN with different InN contents (x=0.13 and 0.19) close to the lattice match with GaN. The Tm³⁺ emission spectrum depends critically on the host material. The blue emission from Al_xGa_1−xN:Tm peaks in intensity for an AlN content of x0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 C. The blue emission from In_0.13Al_0.87N:Tm, annealed at 1200 C, is more than ten times stronger than that from Al_xGa_1−xN:Tm, x≤0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.     

Magnetic and structural properties of magnetoresistive FexAu100−x alloys produced by mechanical alloying

Fe_xAu_100−x alloys have been produced for the first time by mechanical alloying. X-ray diffractograms show FCC peaks. From the X-ray diffracion peak-widths we estimate the final grain size, which vary with x from 112 nm (for x=15) to 32 nm (for x=30). Lattice parameter decreases with concentration (minimum 0.401 nm at x=30), but above Vegard's law values. Susceptibility measurements show cluster-glass behaviour. Critical temperatures are consistently lower than similar alloys produced by arc melting followed by fast quenching. A magnetic phase diagram is presented. Giant magnetoresistance is present in all samples, with a maximum at x=25. This effect is caused by the dispersion of small iron clusters produced by the mechanical work.     

Structural and vibrational properties of dilute GaNxAs1−x(P1−x)

We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs_1−xN_x,[GaP_1−xN_x] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {N_As[N_P]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.